• 제목/요약/키워드: Surface diffusion

검색결과 1,613건 처리시간 0.03초

다공성 흑연의 기공내부로 침투하는 Si 증발입자의 확산 (Diffusion of Si Vapor Infiltrating into Porous Graphite)

  • 박장식;황정태
    • 한국표면공학회지
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    • 제49권1호
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    • pp.104-109
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    • 2016
  • Graphite's thermal stability facilitates its widespread use as crucibles and molds in high temperatures processes. However, carbon atoms can be rather easily detached from pores and outer surfaces of the graphite due to the weak molecular force of the c axis of graphites. Detached carbon atoms are known to become a source of dust during fabrication processes, eventually lowering the effective yield of products. As an effort to reduce these problems of dust scattering, we have fabricated SiC composites by employing Si vapor infiltration method into the pores of graphites. In order to understand the diffusion process of the Si vapor infiltration, Si and C atomic percentages of fabricated SiC composites are carefully measured and the diffusion law is used to estimate the diffusion coefficient of Si vapor. A quadratic equation is obtained from the experimental results using the least square method. Diffusion coefficient of Si vapor is estimated using this quadratic equation. The result shows that the diffusion length obtained through the Si vapor infiltration method is about 10.7 times longer than that obtained using liquid Si and clearly demonstrates the usefulness of the present method.

도재소부용 저금함유금합금에서 도재계면의 표면거동에 미치는 미량원소 In의 영향 (Effect of In on Surface Behaviors of Porcelain-Metal Boundary in Low Gold Porcelain Alloys)

  • 남상용;이기대
    • 대한치과기공학회지
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    • 제21권1호
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    • pp.15-26
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    • 1999
  • This study was carried out by observing to composition of oxide on the surface of dental porcelain low gold alloy with various Indium additions according to the degassing and analysing the change composition of additional elements In on diffusion behaviors of Porcelain-matal surface. The specimens used were Au-Pd-Ag alloys by small indium addition. These specimens were treated for 10min at $1000^{\circ}C$ in vacuum condition. To investigate the microsturcture of oxidized alloy surface, SEM and EDAX were used, and EPMA were used to investigate the diffusion behaviors of porcelain-metal surface. X-ray diffraction were used to observe the morphological changes in the oxidation zone. The results of this study were obtained as follows ; 1) The hardness of alloy increased with increasing amount of In addition. 2) The formation of oxidation increased with increasing In content after heat treatment. 3) Diffusion of indium elements increased with increasing In content in metal-porcelain surface after firing. 4) The oxidations of alloy surface were mainly $In_2O_3$.

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마그네슘 합금 표면의 지르코니아 분말 레이저 소결과정에서 조사 패턴이 접합 계면 품질에 미치는 영향 (Effect of Laser Processing Patterns on the Bonding Interface Quality during Laser Sintering of Magnesium Alloys with Zirconia)

  • 윤상우;김주한
    • 한국기계가공학회지
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    • 제20권2호
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    • pp.51-57
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    • 2021
  • The quality of the ceramic sintered coating on a metal surface through laser surface treatment is affected by the laser irradiation pattern. Depending on the laser irradiation pattern, the amount of residual stress and heat applied or accumulated on the surface increases or decreases, affecting the thickness attained in the ceramic sintering area. When the heat energy accumulated in the sintering area is high, the ceramic and the metal alloy melt and sufficiently mix to form a homogeneous and thick bonding interface. In this study, the thermal energy accumulation in the region sintered with zirconia was controlled using four types of laser processing patterns. The thickness of the diffusion region is analyzed by laser-induced breakdown spectroscopy of Mg-ZrO2 generated by laser sintering zirconia powder on the magnesium alloy surface. On the basis of the analysis of the Mg and Zr present in the sintered region through LIBS, the effect of the irradiation pattern on the sintering quality is confirmed by comparing and analyzing the heat and mass transfer tendency of the diffusion layer and the degree of diffusion according to the irradiation pattern. The derived diffusion coefficients differed by up to 9.8 times for each laser scanning pattern.

윤활제와 표면처리에 따른 온간단조 금형의 열적특성 평가 (Evaluation of Thermal Characteristics for Warm Forging Die due to Lubricants and Surface Treatments)

  • 김종호;김동진;정덕진;김병민
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2000년도 춘계학술대회 논문집
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    • pp.833-836
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    • 2000
  • The mechanical and thermal load. and thermal softening which is happened by the high temperature of die, in hot and warm forging, cause wear. heat checking and plastic deformation, etc. This study is for the effects of solid lubricants and surface treatments for warm forging die Because cooling effect and low friction are essential to the long lift of dies. optimal surface treatments and lubricants are very important to hot and warm forging Process. The heat that is generated by repeated forging processes. and its transfer are important factors to affect die life. The main factors, which affect die hardness and heat transfer, are surface treatments and lubricants, which are related to thermal diffusion coefficient and heat transfer coefficient, etc. For verifying these. experiments art performed for diffusion coefficient and heat transfer coefficient in various conditions - different initial billet temperatures and different loads. Carbonitriding and ionitriding are used as surface treatments. and oil- base and water-base graphite lubrirants are used. The effects of lubricant and surface treatment for warm forging die lift are explained by their thermal characteristics.

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확산 지향성을 고려한 확산체의 설계 (Design of diffusers in consideration of scattering and diffusion characteristics)

  • 김용희;김재호;김정준;전진용
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2008년도 춘계학술대회논문집
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    • pp.21-24
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    • 2008
  • This study proposes a optimized shape of diffuser profile through investigating the scattering and diffusion characteristics of diffusers. The scattering coefficient according to ISO 17497-1 evaluates uniformity of reverberant sound field of late reflections, while the diffusion coefficient according to AES-4id-2001 evaluates polar response of early reflections. Thus both scattering and diffusion characteristics should contribute to design shape of diffusers to maximize physical performance. To find out design method, the previous results on hemisphere diffusers are reviewed. The frequency characteristics of scattering coefficients depended on the structural height of the diffusers, while amount of scattering coefficients depended on the surface coverage density of the diffusers. However absorptive properties also increased with augment of surface coverage density, thus optimum coverage density should be considered. For the directional diffuser, three types of 2D-diffusers are proposed; semicylinder of h=5mm, semi-truncated cone of h=5-25mm and semicylinder of h=25mm. As results, diffusers with the maximum height of 25mm show the highest scattering coefficients, while diffuser of h=5mm shows high scattering coefficients only at the high-frequency bands. Diffusion coefficient will be investigated for diffusive properties of the early reflection.

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XPS를 이용한 TiN/Cu의 Grain boundary diffusion 연구 (The study of Grain boundary diffusion effect in Tin/Cu by Xps)

  • 임관용;이연승;정용덕;이경민;황정남;최범식;원정연;강희재
    • 한국진공학회지
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    • 제7권2호
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    • pp.112-117
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    • 1998
  • TiN을 Cu의 확산방지막으로 사용하기 위해 많은 연구가 되어왔는데, 이 연구에서는 특히 X-ray photoelectron spectroscopy(XPS)를 이용하여 TiN박막에서의 Cu의 확산현상을 연구하였다. TiN박막은 일반적으로 columnar grain을 형성하면서 성장을 하는데, 녹는점의 1/3에 해당하는 비교적 낮은 온도에서는 grain들의 경계를 따라 Cu가 확산함을 확인하였다. Atomic force microscopy(AFM)를 이용하여 grain의 모양을 관찰하였고, 이 grain boundary 를 통한 확산 현상을 연구하기 위하여, modified surface accumulation method를 이용하였 다. 연구 결과, TiN박막에서의 Cu의 grain boundary diffusion의 활성화 에너지 $Q_b$는 0.23 eV, Diffusivity $D_{bo}$$5.5\times10^{-12{\textrm{cm}^2$/sec의 값을 얻었다.

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확산필름 부착 위치에 따른 광선반 성능개선 연구 (Research of the Performance Improvement of a Light Shelf Depending on the Diffusion Film Installation Position)

  • 박은수;이행우;송석재;김용성
    • KIEAE Journal
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    • 제17권3호
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    • pp.91-97
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    • 2017
  • Purpose: Various studies on a light shelf are in progress, but it has the problem of glare occurrence. The present study suggested a diffusion film as the method for resolving the glare problem, and aimed to establish light shelf-related basic data by conducting the performance evaluation of a light shelf depending on the installation position of the diffusion film. Method: To carry out the light shelf performance evaluation depending on the diffusion film installation position, three cases were established: no diffusion film installation (Case 1), diffusion film installation on the reflector (Case 2), and diffusion film installation on the upper glass surface of the window for light shelf installation (Case 3); and the energy reduction performance, luminance, and luminance contrast were analyzed based on a testbed. Result: The conclusions of this study are as follows. 1) When the diffusion film was applied, the amount of light introduced through the light shelf decreased, and the average indoor illumination decreased accordingly. 2) For Case 3, the lighting energy reduction performance was identical to the lighting energy reduction efficiency of the existing light shelf; and for Case 2, it was found to be inappropriate as the lighting energy consumption increased compared to that of the existing light shelf. 3) The analysis of the glare for the cases established in this study showed that the luminance contrast was low for Case 3, and thus the glare problem could be minimized. 4) The specific angle of the light shelf could induce the glare problem by increasing the luminance depending on the external condition. 5) Based on the aforementioned contents, the installation position of the diffusion film for improving the lighting performance and glare problem of the light shelf was found to be the upper glass surface of the window for light shelf installation.

인산형 연료전지용 다공성 박막의 표면 다공도에 관한 연구 (Study on the surface porosity of porous thin layer electrode for phosphoric acid fuel cell)

  • 김조웅;김영우;이주성
    • 한국표면공학회지
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    • 제24권3호
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    • pp.162-168
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    • 1991
  • Gas diffusion and electrolyte penetration in wetproofed gas diffusion electrodes were studied using layers of PTFE- bonded carbon. Minor variations in fabrication and testing procedures resulted in very large variations in catalyst layer wetting characteristics and permiability for reaction gas. By controlling the pore size of gas diffusion electrode carefully by varing the PTFE contents, baking temperature, baking time and ammonium bicarbonate as additive, the primary pore was decreased and the secondary pore was increased and so more reaction gas through the primary pore could be reacted at catalyst agglomertes in the secondary pore. And the cathode current density was increased to more than 400mA.$\textrm{cm}^2$ and Tafel slope value was decreased to lower than 110mA/decade.

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Auger 전자현미경을 이용한 LPE에 의해서 성장된 InGaAsP/InP 이종접합계면에 대한 연구 (Auger Study of LPE Grown In Ga As P/In P Heterostructure)

  • 김정호;권오대;박효현;남은수
    • 대한전자공학회논문지
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    • 제25권12호
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    • pp.1656-1662
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    • 1988
  • Auger depth profiles of various In Ga As P/In P heterojunctions grown by liquid phase epitaxial techniques under different growth conditions such as diffusion temperature, diffusion time and dopants, have been obtained. The surface contaminations of In Ga As have been investigated. We found that the samples with Zn diffusion exhibit significant interface grading phenomena including In depletion, Ga richness and P richness at the In Ga As P/In P interface, and In outdiffusion at the surface. The main surface contamination was found to be due to carbon and oxygen species. It can be suggested that Zn gettering takes a major role in such phenomena as interface grading, in depletion, and Ga and P richness at the interface.

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Synthesis of p-Type ZnO Thin Film Prepared by As Diffusion Method and Fabrication of ZnO p-n Homojunction

  • Kim, Deok Kyu
    • 한국전기전자재료학회논문지
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    • 제30권6호
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    • pp.372-375
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    • 2017
  • ZnO thin films were deposited by RF magnetron sputtering and then diffused by using an As source in the ampouletube. Also, the ZnO p-n homojunction was made by using As-doped ZnO thin films, and its properties were analyzed. After the As doping, the surface roughness increased, the crystal quality deteriorated, and the full width at half maximum was increased. The As-doped ZnO thin films showed typical p-type properties, and their resistivity was as low as $2.19{\times}10^{-3}{\Omega}cm$, probably because of the in-diffusion from an external As source and out-diffusion from the GaAs substrate. Also, the ZnO p-n junction displayed the typical rectification properties of a p-n junction. Therefore, the As diffusion method is effective for obtaining ZnO films with p-type properties.