• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.216-221
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• 2006

An investigation of the influence of $WO_3$ and $V_2O_5$ catalysts on the microstructure, phase formation and selective catalytic reduction (SCR) efficiency of the synthesized SCR powders has been carried out. A commercial anatase-$TiO_2$ was used as the catalysts support. For $WO_3(10wt%)/TiO_2$, the W loading to the $TiO_2$ support led to the lower in anatase to rutile transition temperature from $1200^{\circ}C$ of $TiO_2$ support to ${\sim}900^{\circ}C$. The transition temperature was also lowered to below $650^{\circ}C$ in the $V_2O_5$(5 and 10 wt%) added composition. The $WO_3(10wt%)/TiO_2$ SCR powder obtained at $450^{\circ}C$ showed near 100% of $NO_x$ conversion efficiency at $350{\sim}400^{\circ}C$ and for the powder prepared at $650^{\circ}C$ the same efficiency was achieved in wider temperature range $300{\sim}400^{\circ}C$. The highest $NO_x$ conversion efficiency of 100% was obtained in the $V_2O_5(5wt%)/TiO_2$ SCR composition calcined at $650^{\circ}C$ in the relatively wider temperature range $250{\sim}350^{\circ}C$, while the catalytic efficiency considerably decreased for the $V_2O_5(10wt%)/TiO_2$. The lowered conversion efficiency of $NO_x$ observed in the $V_2O_5(10wt%)/TiO_2$ composition calcined at $650^{\circ}C$ was considered to be correlated with the lowered surface area resulting from the increased crystallite growth by highly reactive vanadium loading.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1196-1204
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• 1999

We have carried out copper MOCVD(metalorganic chemical vapor deposition) onto the reactive sputtered PVD-TiN and rapid thermal converted RTP-TiN substrates using direct liquid injection for effective delivery of the (hfac)Cu(vtmos) [$C_{10}H_{13}O_{5}CuF_{6}$Si: 1,1,1,5,5,5-hexafluoro-2,4- pentadionato (vinyltrimethoxysilane) copper (I)] precursor. Especially, the influences of deposition conditions and the substrate type on growth rate, crystal structure, microstructure, and electrical resistivity of copper deposits have been discussed. It is found that the film growth with 0.2ccm precursor flow rate become mass-transfer controlled up to Ar flow rate of 200sccm and pick-up rate controlled at a vaporizer above 1.0Torr reactor pressure. The surface-reaction controlled region from 155 to 225$^{\circ}C$ at 0.6Torr reactor pressure results in the apparent activation energies of 12.7~14.1kcal/mol, and above 224$^{\circ}C$ the growth rate with $H_2$ addition could be improved compared to the pure Ar carrier. The Cu/RTP-TiN structures which have high copper nucleation density in initial stage of growth show more pronounced (111) preferred orientations and lower electrical resistivities than those on PVD-TiN. The variation of electrical resistivity with substrate temperature reflects the three types of film microstructure changes, showing the lowest value for the deposit at 165$^{\circ}C$ with small grains of good contacts.

• Korean Journal of Materials Research
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• v.22 no.1
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• pp.54-60
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• 2012

The particle size of MgO was examined as a function of the Na content in $Mg(OH)_2$ powders and the calcination temperature. $Mg(OH)_2$ suspension was obtained by dropwise precipitation of $Mg(NO_3)_2{\cdot}6H_2O$ and NaOH solutions. The suspension was diluted by varying the dilution volume ratio of distilled water to $Mg(OH)_2$ suspension to change the Na salt concentration in the suspension. $Mg(OH)_2$ slurry was filtered and dried at $60^{\circ}C$ under vacuum, and then its $Mg(OH)_2$ powder was calcined to produce MgO with different amount of Na content at $500\sim900^{\circ}C$ under air. Investigation of the physical and chemical properties of the various MgO powders with dilution ratio and calcination temperature variation was done by X-ray diffraction, transmission electron microscopy, BET specific surface area and thermal gravimetric analysis. It was observed that MgO particle size could depend on the condition of calcination temperature and dilution ratio of the $Mg(OH)_2$ suspension. The particle size of the MgO depends on the Na content remaining in the $Mg(OH)_2$ powder, which powder was prepared by changing the dilution ratio of the $Mg(OH)_2$ suspension. This change increased as the calcination temperature increased and decreased as the dilution ratio increased. The growth of MgO particle size according to the increase of temperature was more effective when there was a relatively high content of Na. The increase of Na content lowered the temperature at which decomposition of $Mg(OH)_2$ to MgO took place, thereby promoting the crystal growth of MgO.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.81-89
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• 1994

Ti film of lOnm thickness and Co film of 18nm thickness were sequentially e-heam evaporated onto Si (100) substrates. Metal deposited samples were rapidly thermal-annt.aled(KTA) in thr N1 en vironment a t $900^{\circ}C$ for 20 sec. to induce the reversal of metal bilayer, so that $CoSi_{2}$ thin films could be formed. The sheet resistance measured by the 4-point probe was 3.9 $\Omega /\square$This valur was maintained with increase in annealing time upto 150 seconds, showing high thermal stab~lity. Thc XRII spectra idrn tified the silicide film formed on the Si substrate as a $CoSi_{2}$ epitaxial layer. The SKM microgr;iphs showed smooth surface, and the cross-sectional TKM pictures revealed that the layer formed on the Si substrate were composed of two Co-Ti-Si alloy layers and 70nm thick $CoSi_{2}$ epl-layer. The AES analysis indicated that the native oxide on Si subs~rate was removed by TI ar the beginning of the RTA, and Ihcn that Co diffused to clean surface of Si substrate so that epitaxial $CoSi_{2}$ film could bt, formed. In thc rasp of KTA at $700^{\circ}C$. 20sec. followed by $900^{\circ}C$, 20sec., the thin film showed lower sheet resistance, but rough surface and interface owing to $CoSi_{2}$ crystal growth. The application scheme of this $CoSi_{2}$ epilayer to VLSI devices and the thermodynarnic/kinetic mechan~sms of the $CoSi_{2}$ epi-layer formation through the reversal of Co/Ti bdayer were discussed.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.127.1-127.1
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• 2011

In this paper, ZnO:Al thin films with c-axis preferred orientation were prepared on Soda lime glass substrates by RF magnetron sputtering technique. AZO thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and substrate temperature conditions variously, structural and electrical characteristics were measured. For the manufacture of the AZO were vapor-deposited in the named order. It is well-known that post-annealing is an important method to improve crystal quality. For the annealing process, the dislocation nd other defects arise in the material and adsorption/decomposition occurs. The XRD patterns of the AZO films deposited with grey theory prediction design, annealed in a vacuum ambient($2.0{\times}10-3$Torr)at temperatures of 200, 300, 400 and $500^{\circ}C$ for a period of 30min. The diffraction patterns of all the films show the AZO films had a hexagonal wurtzite structure with a preferential orientation along the c-axis perpendicular to the substrate surface. As can be seen, the (002)peak intensities of the AZO films became more intense and sharper when the annealing temperature increased. On the other hand, When the annealing temperature was $500^{\circ}C$ the peak intensity decreased. The surface morphologies and surface toughness of films were examined by atomic force microscopy(AFM, XE-100, PSIA). Electrical resistivity, Gall mobility and carrier concentration were measured by Hall effect measuring system (HL5500PC, Accent optical Technology, USA). The optical absorption spectra of films in the ultraviolet-visibleinfrared( UV-Vis-IR) region were recorder by the UV spectrophotometer(U-3501, Hitachi, Japan). The resistivity, carrier concentration, and Hall mobility of ZnS deposited on glass substrate as a function of post-annealing.

• Applied Chemistry for Engineering
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• v.34 no.6
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• pp.670-673
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• 2023

The biocompatibility of hydroxyapatite (HAP) has led to its application in various fields. To accomplish practical biological applications, such as drug/gene delivery, the colloidal stability of HAP in phosphate-buffered saline (PBS) is particularly important. In this study, we prepared a glycerol incorporated-HAP (Gly-HAP) by heating HAP in a glycerol environment at 200 ℃. To compare morphology and colloidal stability, HAP prepared at room temperature (RT-HAP) was thermally treated in water at 200 ℃ (H₂O-HAP). The heat treatment of HAP in both water and glycerol solutions results in an increase in the crystallinity of HAPs. Due to the low solubility of HAP in glycerol and the adsorption of glycerol on the HAP surface, crystal growth is limited. However, the heat-treated HAP under water increased in size by approximately four times compared to the initial crystallites. Compared to RT-HAP and H₂O-HAP, Gly-HAP shows improved colloidal stability in PBS, which originates from the adsorption of glycerol on the HAP surface that inhibits the agglomeration of individual HAP precipitates.

• The Journal of Korean Medicine Ophthalmology and Otolaryngology and Dermatology
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• v.19 no.2
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• pp.130-145
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• 2006

Objectives : The aim of this work is the approaching of properties-flavours theory and the making of morphological standard in Artemisiae herba. Methods : The properties-flavours theory were attempted with bibliographic method and various climate-information. The external-internal morphological standards were determined by using stereoscope and butanol series. Conclusions : The following is a list the conclusion of the approaching of properties-flavours theory and how to make the standard of morphological standard in artemisiae herba. 1. The significant analysis for the artemisiae herba as the properties-flavours theory, is a follow-up survey of the effect written in the official oriental medicine book 2. The other analytic methods according to the gathering time, processing or storing system or especially nature or growth environment(altitude, temperature,. the mean moisture, and the agronomical survey) by way of the explanation of properties-flavours theory appears so many insufficiency at the many cases. 3. In the case of artemisiae herba., there are 2 cases(Artemisia capillaris $T_{HUNB}$ and A. iwayomogi $K_{ITAMURA}$) in current and recently A. aruwa L. is substituted for artemisiae herba in circulation. 4. The external and internal characteristics according to the shape of original plant or herbal states, entirely correspond to all the official oriental medicine boo 5. According to the place of productiot the difference appeals. (1) A. capillatis $T_{HUNB}$. has leaves like a fine thread, and A. iwayomogi $K_{ITAMURA}$ has big and wide leaves, and shows some reddish color, and A. aruwa L. has narrow leaves, its section lines long vertically. (2) In the internal shapes, as the A. capillatis $T_{HUNB}$. leaves', upper epidermal cell wall shows relatively straight form, its all upper- lower epidemical cell wall has a stoma, and calcium rosette crystal is relatively few. As iwayomogi $K_{ITAMURA}$, all upper- lower epidermal cell wall is wavelike concave, and hypodermics has many stoma and many calcium rosette crystal. (3) In the internal shapes of A. aruwa L. the shape of leaves' epidermal cell is irregular and has so many non-glandular hair nad glandular hair on its surface.

• Journal of the Korean Ceramic Society
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• v.56 no.6
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• pp.526-533
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• 2019

Indialite/cordierite glass-ceramics demonstrate excellent microwave dielectric properties such as a low dielectric constant of 4.7 and an extremely high quality factor Qf of more than 200 × 10³ GHz when crystallized at 1300℃/20 h, which are essential criteria for application to 5G/6G mobile communication systems. The glass-ceramics applied to dielectric resonators, low-temperature co-fired ceramic (LTCC) substrates, and direct casting glass substrates are reviewed in this paper. The glass-ceramics are fabricated by the crystallization of glass with cordierite composition melted at 1550℃. The dielectric resonators are composed of crystallized glass pellets made from glass rods cast in a graphite mold. The LTCC substrates are made from indialite glass-ceramic powder crystallized at a low temperature of 1000℃/1 h, and the direct casting glass-ceramic substrates are composed of crystallized glass plates cast on a graphite plate. All these materials exhibit excellent microwave dielectric properties.

• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.507-515
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• 1995

The monolithic dry gels of the Li2O-Al2O3-TiO2-SiO2 system were prepared by the sol-gel technique using metal alkoxides as starting materials to obtain monolithic glass-ceramics at low temperature without melting. Activation energy for the crystal growth of the gel with 6.05% TiO2, nucleating ageng, for the preparation of Li2O-Al2O3-TiO2-SiO2 system glass-ceramic was 101.14kcal/mol. As a result of the analysis of DTA & XRD, it was confirmed that the crytallization of Li2O-Al2O3-TiO2-SiO2 system glass-ceramic was the most efficient when 6.05% TiO2, nucleating agent, was added. $\beta$-eucryptite solid solution crystals and $\beta$-spodumene solid solution crystals were detected in the sample heat treated above 85$0^{\circ}C$. The sintered gel heat treated at 85$0^{\circ}C$ had the specific surface area of 185$m^2$/g, the pore volume of 0.19cc/g and the average pore radius of 20.8$\AA$. This shows that the sintered gel is also comparatively porous material. In temperature range of 25~85$0^{\circ}C$ thermal expansion coefficient of the specimen which was crystallized for 10hrs at 85$0^{\circ}C$ was 6.7$\times$10-7/$^{\circ}C$, which indicated that the crystallized specimen was turned out to be the glass-ceramic with low thermal expansion.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.14 no.2
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• pp.33-41
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• 2005

ZnO epilayer was synthesized by the pulsed laser deposition(PLD) process on Al$_2$O$_3$ subsorte after irradiating the surface of ZnO sintered pellet by ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A1203) substrate at the 境mperature of 400$^{circ}$C. The crystalline structure of epilayer was investigated by the Photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measure with Hall effect by van der Pauw mothod are $8.27\times$1016cm$^{-3}$ and 299 cm$^{2}$/V$\cdot$s at 293 K respectively, The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, E$_g$(T)= 3.3973 eV - ($2.69\times$ 10$^{-4}$ eV/K)T$^{2}$/(T + 463K). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of V$_{Zn}$, V$_{O}$, Zn$_{int}$, and O$_{int}$ obtained by PL measurements were classified as a donor or acceptor type. In addition we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/Al$_2$O$_3$ did not firm the native defects because vacuum in ZnO thin films existed in the form of stable bonds.