• Journal of the Korea institute for structural maintenance and inspection
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• v.14 no.1
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• pp.71-77
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• 2010

The concrete structure's durability and integrity is reduced owing to various deterioration phenomena. Therefore, it is important to prevent the deterioration phenomena. This study inquired into the various experimental results of specimens with different dilution concentration and impregnation time by the each solution to present the economic and efficient using method of the inorganic surface penetration agents. As a results, the reasonable dilution concentration and impregnation time of colloidal silica solutions are 15% and 5 minute and for the sodium alumina silicate solutions are 17% and 10 second.

• Elastomers and Composites
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• v.41 no.4
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• pp.238-244
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• 2006

Functionalization of montmorillonite clay has been done using 3-aminopropyltriethoxy silane using water as a dispersing medium. Qualitative evidence of the presence or silane attached to the clay surface has been identified using Fourier transform infrared spectroscopy (FT-IR). Increase in silane concentration decreases the adsorbed/intercalated ratio calculated using differential thermogravimetric analysis (DTG). Average d-spacing calculated using X-ray diffraction initially increases with silane concentration and decreases slightly at higher silane concentration. The influence of processing temperature on the silane functionalization of clay has also been investigated and it shows that chemical grafting of silane on the clay surface is observed with increasing processing temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.190.1-190.1
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• 2015

Graphite has excellent mechanical and physical properties. It is known to advanced materials and is used to materials for molds, thermal treatment of furnace, sinter of diamond and cemented carbide tool etc. SiC materials are coated on the surface and holes of graphite to protect particles emitted from porous graphite with 5%~20% porosity and make graphite hard surface. SiC materials have high durability and thermal stability. Thermal CVD method is widely used to manufacture SiC thin films but high cost of machine investment and production are required. SiC thin films manufactured by Si reaction liquid and vapore with carbon are effective because of low cost of machine and production. SiC thin films made by vapor silicon infiltration into porous graphite can be obtained for shorter time than liquid silicon. Si materials are evaporated to the graphite surface in about $10^{-2}$ torr and high temperature. Si materials are melted in $1410^{\circ}C$. Si vapor is infiltrated into the surface hole of porous graphite and $Si_xC_y$ compound is made. $Si_x$ component is proportional to the Si vapor concentration. Si diffusion coefficient is estimated from quadratic equation obtained by Fick's second law. The steady stae is assumed. Si concentration variation for the depth from graphite surface is fitted to quadratic equation. Diffusion coefficient of Si vapor is estimated at about $10^{-8}cm^2s^{-1}$.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.36 no.3
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• pp.35-43
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• 2004

Reduction of fresh water consumption and effluent discharge provide diverse advantages in raw materials and energy savings. Papermaking system closure, however, reduces the efficiency of additives, decreases retention and dewatering, and causes many other Problems in papermaking. Accumulation of inorganic and organic substances in the process white water is the prime cause of these problems. Understanding of the accumulation phenomena of the detrimental substances in the papermaking process is of great importance for papermaking system closure. In this study a process simulation method was employed to analyze the accumulation phenomena of anionic starch in the process white water as the reuse rate of dry broke and pick up of surface sizing agent is increased. Steady state simulation studies were carried out based on the model developed in previous study. The variation of dissolved starch concentration in each process unit was monitored as a function of reuse rate of dry broke and surface sizing agent pick up rate. The result showed that dissolved starch concentration Increased as reuse rate of dry broke and surface sizing agent pick up rate was increased.

• Journal of the Korean institute of surface engineering
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• v.41 no.4
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• pp.174-179
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• 2008

Nanosize tungsten powder was synthesized by ultrasonic spray pyrolysis method through a solution containing ammonium metatungstate hydrate $[(NH_4)_6W_{12}O_{39}{\cdot}H_2O]$ and reduction treatment. It was expected the improvement of mechanical properties due to increasing surface free energy and surface activity. Starting solutions with each concentration, reaction temperature and reduction treatment were significantly influenced on the formation of tungsten size and phase. It was found that particle size was decreased with concentration of starting solution and surface tension were decreased. The particle size was increased at thermal decomposition temperature above $600^{\circ}C$ by neck growth of interparticles. Tungsten particles were formed by reduction reaction in atmosphere of hydrogen gas at the temperature above $700^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.25 no.4
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• pp.189-206
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• 1992

The effect of activation and electroless nickel plating conditions on contact properties was investi-gated for selective electroless nickel plating of Si wafers in order to obtain an optimum condition of con-tact hole filling. According to RCA prosess, p-type silicon (100) surface was cleaned out and activated. The effects of temperature, DMAB concentration, time, and strirring were investigated for activation of p-type Si(100) surface. The optimal activation condition was 0.2M HF, 1mM PdCl2, 2mM EDTA,$ 70^{\circ}C$, and 90sec under ultrasonic vibration. In electroless nickel plating, the effect of temperature, DMAB concentra-tion, pH, and plating time were studied. The optimal plating condition found was 0.10M NiSO4.H2O, 0.11M Citrate, pH 6.8, $60^{\circ}C$, 30minutes. The contact resistance of films was comparatively low. It took 30minutes to obtain 1$\mu\textrm{m}$ thick film with 8mM DMAB concentration. The film surface roughness was improved with decreasing temperature and decreasing pH of the plating solution. The best quality of the film was obtained at the condition of temperature $60^{\circ}C$ and pH 6.0. The micro-vickers hardness of film was about 800Hv. Plating rate of nickel on the hole pattern was slower than that of nickel on the line pattern.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.3
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• pp.121-125
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• 2016

The effect of temperature and pressure in the nitrogen ambient furnace on bulk micro defect (BMD) and denuded zone (Dz) is experimentally investigated. It is found that as pressure increases, Dz depth increases with a small decrease of BMD density in the range of temperature, $100{\sim}300^{\circ}C$. BMD density with hot isostatic pressure treatment (HIP) at temperature of $850^{\circ}C$ is higher than that without HIP while Dz depth is lower due to much higher BMD density. As the pressure increases, BMD density is increased and saturated to a critical value, and Dz depth increases even if BMD density is saturated. The concentration of nitrogen increases near the surface with increasing pressure, and the peak of the concentration moves closer to the surface. The nitrogen is gathered near the surface, and does not become in-diffusion to the bulk of the wafer. The silicon nitride layer near the surface prevents to inject the additional nitrogen into the bulk of the wafer across the layer. The nitrogen does not affect the formation of BMD. On the other hand, the oxygen is moved into the bulk of the wafer by increasing pressure. Dz depth from the surface is extended into the bulk because the nuclei of BMD move into the bulk of the wafer.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.301-313
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• 1996

The texture of vapor deposits(PVD and CVD) changes from the orientation that places the lowest energy lattice plane parallel to the substrate under the condition of low atom or ion concentration adjacent to the deposit, to the orientation that places the higher energy crystal planes parallel to the substrate as the atom or ion concentration adjacent to the deposit increases. However, in the early stage of deposition, the deposit-substrate interface energy and the surface energy constitute the most important energies of the system. Therefore, if the lattice match is established between the substrate and the deposit without generating much strain energy, the epitaxial growth takes place to reduce the interfacial energy. When the epitaxial growth does not take place, the surface energy is dominant in the early stage of deposition and the lowest energy crystal plane tends to be placed parallel to the substrate up to a critial thickness. The thickness depends on the deposition condition. If the deposition condition does not favor placing the lowest energy crystal plane parallel to the substrate, the initial texture will change to that compatible with the deposition condition as the film thickness increases, and the texture turnover thickness will be short. The microstructure and surface topography of deposits are related to their texture.

• Journal of the Korean institute of surface engineering
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• v.56 no.6
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• pp.386-392
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• 2023

In this work, we describe the reduction kinetics of gold nanoparticles synthesized by plasma discharge in aqueous solutions with varied voltages and precursor (HAuCl₄) concentrations. The reduction rate of [AuCl₄]^- was determined by introducing NaBr to the gold colloidal solution synthesized by plasma discharge, serving as a catalyst in the reduction process. We observed that [AuCl₄]^- was completely reduced when its characteristic absorption peak at 380 nm disappeared, indicating the absence of [AuCl₄]^- for ligand exchange with NaBr. The reduction rate notably increased with the rise in discharge voltage, attributable to the intensified plasma generated by ionization and excitation, which in turn accelerated the reduction kinetics. Regarding precursor concentration, a lower concentration was found to retard the reduction reaction, significantly influencing the reduction kinetics due to the presence of active H⁺ and H radicals. Therefore, the production of strong plasma with high plasma density was observed to enhance the reduction kinetics, as evidenced by optical emission spectroscopy.

• Journal of the Korean institute of surface engineering
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• v.42 no.3
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• pp.116-121
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• 2009

The 2-step low temperature plasma processes (the combined carburizing and post-nitriding) offer the increase of both surface hardness and thickness of hardened layer and corrosion resistance than the individually processed low temperature nitriding and low temperature carburizing techniques. The 2-step low temperature plasma processes were carried out for improving both the surface hardness and corrosion resistance of AISI 316L stainless steel. The influence of gas compositions on the surface properties during nitriding step were investigated. The expanded austenite (${\gamma}_N$) was formed on all of the treated surface. The thickness of ${\gamma}_N$ and concentration of N on the surface increased with increasing both nitrogen gas and Ar gas levels in the atmosphere. The thickness of ${\gamma}_N$ increased up to about $20{\mu}m$ and the thickness of entire hardened layer was determined to be about $40{\mu}m$. The surface hardness was independent of nitrogen and Ar gas contents and reached up to about 1200 $HV_{0.1}$ which is about 5 times higher than that of untreated sample (250 $HV_{0.1}$). The corrosion resistance in 2-step low temperature plasma processed austenitic stainless steels was also much enhanced than that in the untreated austenitic stainless steels due to a high concentration of N on the surface.