• 한국기계가공학회지
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• 제19권2호
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• pp.69-74
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• 2020

In this study, we proposed a method for surface profiling aspheric lens molds using a precision displacement sensor with a spatial scanning mechanism. The precision displacement sensor is based on the confocal principle using a broadband light source, providing a 10 nm resolution over a 0.3 mm measurable range. The precision of the sensor, depending on surface slope, was evaluated via Allan deviation analysis. We then developed an automatic surface profiling system by measuring the cross-sectional profile of a lens mold. The precision of the sensor at the flat surface was 10 nm at 10 ms averaging time, while 200 ms averaging time was needed for identical precision at the steepest slope at 25 deg. When we compared the measurement result of the lens mold to a commercial surface profiler, we found that the accuracy of the developed system was less than 90 nm (in terms of 3 sigmas of error) between the two results.

• 한국진공학회지
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• 제12권3호
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• pp.162-167
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• 2003

시료에 주입된 이온의 깊이방향에 따른 농도분포를 알아보기 위하여 시료표면을 sputtering 하면서 튀어나온 주입된 이온을 depth profiling한다. Depth profiling 측정 시에 깊이방향에 영향을 주는 sputtering rate가 변화하는 효과를 SRIM simulation을 이용하여 계산하였다. 시료에 이온이 주입하게 되면 시료의 원자밀도는 약간 증가하게 되는데, 그 결과로 sputtering yield가 변화하게 된다. 이러한 변화가 결과적으로 depth profile 측정시에 깊이방향에 영향을 줄 수 있는 sputtering rate를 변화시키는 원인이 된다. SRIM(Stopping and Range of Ions in Matter) Monte Carlo simulation code를 사용하여 이온주입에 의한 시료의 원자밀도의 변화에 따른 sputtering yield를 구하여 sputtering rate를 계산하고, 그 차이가 depth profiling 측정에서 깊이방향 분포에 영향을 줄 수 있다는 것을 확인하였다.

• 한국결정성장학회지
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• 제13권1호
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• pp.19-23
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• 2003

Polished surface of $CsB_{3}O_{5}$ (CBO) has been observed by reflection high energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS). For comparison, electronic properties of CBO powder have been studied by XPS. It has been found that the crystal surface is covered by thick amorphous layer with chemical composition closely related to that of CBO. Great enrichment of top surface by cesium, ~30 % in reference to the bulk of the modified layer, has been displayed by depth profiling.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.129-129
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• 1998

Most of the surface/interface analysis tools have limited depth profiling c capability in terms of the profiling range and the depth resolution. However, M MEIS can profile the surface and subsurface composition and structure q quantitatively and non-destructively with atomic layer depth resolution. I In this presentation, the MEIS system developed at KRISS will be briefly d described with an introduction on the principle of MEIS. Recent MEIS r results on the surface and interface composition and structural change due to i ion bombardment will be presented for preferential sputtering of T:없Os and d damage depth profiles of SHooD, Pt(l11), and Cu(l1D due to Ar+ ion b bombardment. Direct observation of strained Si lattices and its distribution i in the SHool)-SiCh interface and the initial stage of Co growth on Pt(l11) w will be reported. H surfactant effects on epitaxial growth of Ge on Si(ooD w will be discussed with STM results from SND.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.20-20
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• 1998

I Ion beam technology has recently attracted much interest because it has exciting t technological p아:ential for surface analysis, ion beam mixing, surface cleaning and etching i in thin film growth and semiconductor fabrication processes, etc. Es야~cially, ion beam s sputtering has been widely used for sputter depth profiling with x-photoelectron S spectroscopy (XPS) , Auger electron s$\pi$~troscopy(AES), and secondary-ion mass S야i따oscopy(SIMS). However, The problem of surface compositional ch없1ge due to ion b bombardment remains to be understo여 없ld solved. So far sputtering processes have been s studied by s따face an외ysis tools such as XPS, AES, and SIMS which use the sputtering p process again. It would be improbable to measure the modified surface composition profiles a accurately due to ion beam bombardment with surface analysis techniques based on sputter d depth profiling. However, recently Medium energy ion scattering spectroscopy(MEIS) has b been applied to study the sputtering of solid surface at ion bombardment and has been p proved that it has been extremely valuable in probing the surface composition 뻐d s structure nondestructively and quantita디vely with less than 1.0 nm depth resolution. To u understand the sputtering processes of solid surface at ion bombardment, The Molecular D Dynamics(MD) and Monte Carlo(MC) simulation has been used and give an intimate i insight into the sputtering processes of solid surfaces. In this presentation, the sputtering processes of alloys and compound samples at ion b bombardment will be reviewed and the MEIS results for the Ar+ sputter induced altered l layer of the TazOs thin film 뻐dd없nage profiling of Ar+ ion sputt얹"ed Si(100) surface will b be discussed with the results of MD and MC simulation.tion.

• 한국진공학회지
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• 제8권3B호
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• pp.283-289
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• 1999

Multilayer thin film reference materials for the sputter depth profiling analysis are used to calibrate the sputter depth scale by measuring the sputtering rate and to optimize the sputtering conditions for the best depth resolution. Surface analysis group of Korea Research Institute of Standards and science (KRISS) have developed various types of multilayer thin films by using an ion beam sputter deposition and in-situ surface analysis system. The chemical states of the thin films reference materials were certified by in-situ XPS and the thicknesses were certified by transmission electron microscopy (TEM).

• 한국광학회지
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• 제10권3호
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• pp.201-207
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• 1999

단일모드 광섬유와 결합기를 이용하여 간결한 구조의 광섬유 공초점 간섭 현미경을 구성하였으며, 위상 변위법을 응용한 표면 검색 방법을 제안하여 통신용의 반도체 레이저와 같이 비교적 긴 파장의 광원과, 낮은 NA의 대물렌즈를 사용하더라도 정밀한 시료 표면 검색이 가능함을 보였다. 이때 시료 표면의 높낮이는 시료로부터 반사된 빛의 위상으로부터 결정되며, 종래의 공초점 현미경에 비하여 주사시간을 크게 단축할 수 있었다. 끝으로 종래의 방법에 비해 제안된 방법은 시료의 반사율 변화에 덜 민감함을 확인할 수 있었다.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2005년도 춘계 학술발표회 논문집
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• pp.338-345
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• 2005

Recently, surface-wave methods have been widely used for site investigation due to economic advantage and improved reliability. Specially, the Spectral-Analysis-of-Surface-Wave (SASW) method has been used to evaluate soil properties in geotechnical engineering. In determination of subgrade stiffness by SASW measurements, only the vertical Rayleigh waves have been used. This study proposed a framework to determine shear-wave velocity profiles by using vertical and horizontal Rayleigh waves and Love wave all together. In addition, the Common-Array-Profiling(CAP) SASW method was employed, which subgrade stiffness of profile the local material under two fixed receivers. The procedure proposed in this study was verified by comparing the shear-wave velocity profiles with the shear-wave velocity profiles of downhole testing at two geotechnical sites.

• 한국진공학회지
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• 제12권S1호
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• pp.92-94
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• 2003

The sputtering yield change of an amorphous Si layer on Si(100) was measured quantitatively for 0.5 keV $O_2^{+}$ and $Ar^{+}$ ion bombardment with in suit MEIS. In the case of 0.5 keV $O_2^{+}$ ion bombardment, at the initial stage of sputtering before surface oxidation, the sputtering yield of Si was 1.4 (Si atoms/$O_2^{+}$) and then decreased down to 0.06 at the ion dose of $3\times10^{16}O_2\;^{+}\textrm{/cm}^2$. In the case of 0.5 keV $Ar^{+}$ ion bombardment, the sputtering yield of Si for the surface normal incidence was 0.56 at the ion dose of 2.5 ${\times}$ 10$^{15}$ $Ar^{+}\textrm{cm}^2$, and rapidly saturated to 1.2 at dose of $7.5\times10^{15}Ar^+\textrm{cm}^2$. For the incidence angle of 80 from surface normal, the sputtering yield of Si was saturated to about 1.4 at the initial stage of sputtering. The surface transient effects, caused by change in sputtering yield at the initial stage of sputtering can be negligible when 0.5 keV $Ar^{+}$ ion at extremely grazing angle was used for sputter depth profiling.g.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2005년도 제29회 학술발표회 초록집
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• pp.42-43
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• 2005