• 제목/요약/키워드: Surface Profiler

검색결과 162건 처리시간 0.047초

Endoscopic Precise 3D Surface Profiler Based on Continuously Scanning Structured Illumination Microscopy

  • Park, Hyo Mi;Joo, Ki-Nam
    • Current Optics and Photonics
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    • 제2권2호
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    • pp.172-178
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    • 2018
  • We propose a precise 3D endoscopic technique for medical and industrial applications. As the 3D measuring principle, the continuously scanning structured illumination microscopy (CSSIM), which enables to obtain 3D sectional images by the synchronous axial scanning of the target with the lateral scanning of the sinusoidal pattern, is adopted. In order to reduce the size of the probe end, the illumination and detection paths of light are designed as coaxial and a coherent imaging fiber bundle is used for transferring the illumination pattern to the target and vice versa. We constructed and experimentally verified the proposed system with a gauge block specimen. As the result, it was confirmed that the 3D surface profile was successfully measured with $16.1{\mu}m$ repeatability for a gauge block specimen. In order to improve the contrast of the sinusoidal illumination pattern reflected off on the target, we used polarizing optical components and confirmed that the visibility of the pattern was suitable in CSSIM.

안경렌즈의 전자파 차폐 코팅에 관한 연구 (A Study on Electromagnetic Shield Coating of Ocular Lens)

  • 김기홍;박대진;김인수
    • 한국안광학회지
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    • 제11권2호
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    • pp.115-119
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    • 2006
  • 전자파 차폐 기능을 가지고 있는 ITO 코팅층을 안경 유리 기판위에 마그네트론 스퍼터링 방법으로 제조하였다. 코팅된 ITO 층을 surface, profiler, four-point probe, XRD, spectrophotometer 및 Auger electron spectroscopy를 사용하여 기판 온도가 코팅층의 특성 변화에 미치는 영향을 조사하였다. 기판의 온도가 높을수록 전자의 농도가 증가하였으며 가시영역에서 광투과율도 향상되었다.

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Surface analysis of CuSn thin films obtained by rf co-sputtering method

  • 강유진;박주연;정은강;강용철
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.175.1-175.1
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    • 2015
  • CuSn thin films were deposited by rf magnetron co-sputtering method with pure Cu and Sn metal targets with a variety of rf powers. CuSn thin films were studied with a surface profiler (alpha step), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), X-ray diffraction (XRD), and contact angle measurement. The thickness of CuSn thin films was fixed at $200{\pm}10nm$ and deposition rate was calculated by the measured with a surface profiler. From the survey XPS spectra, the characteristic peaks of Cu and Sn were observed. Therefore, CuSn thin films were successfully synthesized on the Si (100) substrate. The oxidation state and chemical environment of Cu and Sn were investigated with the binding energy regions of Cu 2p XPS spectra, Sn 3d XPS spectra, and Cu LMM Auger spectra. Change of the crystallinity of the films was observed with XRD spectra. Using contact angle measurement, surface free energy (SFE) and wettability of the CuSn thin films were studied with distilled water (DW) and ethylene glycol (EG).

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Confocal Scanning Microscopy : a High-Resolution Nondestructive Surface Profiler

  • Yoo, Hong-Ki;Lee, Seung-Woo;Kang, Dong-Kyun;Kim, Tae-Joong;Gweon, Dae-Gab;Lee, Suk-Won;Kim, Kwang-Soo
    • International Journal of Precision Engineering and Manufacturing
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    • 제7권4호
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    • pp.3-7
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    • 2006
  • Confocal scanning microscopy is a measurement technique used to observe micrometer and sub-micrometer features due to its high resolution, nondestructive properties, and 3D surface profiling capabilities. The design, implementation, and performance test of a confocal scanning microscopy system are presented in this paper. A short-wavelength laser (405 nm) and an objective lens with a high numerical aperture (0.95) were used to achieve the desired high resolution, while the x- and y-axis scans were implemented using an acousto-optic deflector and galvanomirror, respectively. An objective lens with a piezo-actuator was used to scan the z-axis. A spatial resolution of less than 138 nm was achieved, along with successful 3D surface reconstructions.

라디오미터를 이용한 겨울철 강수형태 결정 및 예측가능성 고찰 (Determination and Predictability of Precipitation-type in Winter from a Ground-based Microwave Radiometric Profiler Radiometer)

  • 원혜영;김연희;장동언
    • 대기
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    • 제20권3호
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    • pp.229-238
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    • 2010
  • The 1,000~500 hPa thickness and the $0^{\circ}C$ isotherm at 850 hPa have been used as the traditional predictors for wintertime precipitation-type forecasts. New approaches are taking on added significance as preexistence method of determination for wintertime precipitation-type exhibits more or less prevalent false alarms. Moreover thicknesses and thermodynamic profiles from ordinary upper-air observation were not adequate to monitor the atmospheric structure. In this regard, Microwave radiometric profiler microwave radiometer is useful in wintertime precipitation-type forecasts because radiometric measurements provide soundings at high temporal resolution. In this study, the determination and the predictability of wintertime precipitation-type were examined by using the calculated thicknesses, temperature of 850 hPa (T850) from a microwave radiometer, and surface observation at National Center for Intensive Observation of severe weather (NCIO) located at Haenam, Korea. The critical values for traditional predictors (thickness of 1000~500 hPa and T850) were evaluated and adjusted to Haenam region because snow rarely occurred with a 1000-500 hPa thickness > 5,300 m and T850 > $-10^{\circ}C$. Three thicknesses (e.g., 1,000~850, 1000~700, and 850~700 hPa thickness), T850, surface air temperature, and wet-bulb temperature were also evaluated as the additional predictors. A simple nomogram and a flow chart were finally designed to determine the wintertime precipitation-type using the microwave radiometer. The skill scores for the predictability of precipitation-type determination are considerably improved and the predictors showed the temporal variations in 12 hours before precipitation. We can monitor the hit and run snowfall in winter successful by realtime watch of the predictors, especially in commutes of big cities.

Helicon Wave Plasma에 의해 식각된 단결정 LiNbO3의 표면 형상 및 특성 (Surface Morphology and Characteristics of LiNbO3 Single Crystal by Helicon Wave Plasma Etching)

  • 박우정;양우석;이한영;윤대호
    • 한국세라믹학회지
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    • 제40권9호
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    • pp.886-890
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    • 2003
  • 단결정 LiNbO$_3$를 helicon wave plasma 방법으로 식각시 bias power와 CF$_4$, HBr, SR$_{6}$가 혼합된 gas 유량에 따른 식각 속도와 rms roughness 값의 특성을 관찰하였다. 식각된 깊이는 surface profiler로 관찰하였으며 rms roughness 값은 Atomic Force Microscopy (AFM)으로 측정하였다. Bias power 증가함에 따라 500W에서 가장 높은 식각 속도와 가장 평탄한 표면형상을 얻을 수 있었으며, CF$_4$, HBr, SF$_{6}$ gas 유량을 각각 10~30 sccm으로 증가시킴에 따라 식각 속도는 CF$_4$, HBr, SF$_{6}$ gas 유량이 10 sccm, 30 sccm, 10 sccm에서 가장 높게 나타났으며, rms roughness 값은 CF$_4$, HBr, SF$_{6}$ gas 유량이 30 sccm, 10 sccm, 30 sccm에서 가장 낮은 표면 조도를 나타내었다.

Rain Rate Estimation Process Using Doppler Spectrum of UHF Wind Profiler Radar

  • Kitichai Visessiri;Chaiwat Somboonlarp;Anuchit Waisontia;Lee, Nipha laruji;Narong Hemmakon
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 ITC-CSCC -3
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    • pp.1575-1577
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    • 2002
  • In this research we propose a method far rain rate estimation by using Doppler spectrum's data of wind profiler. The Doppler spectrum is used to calculate the wind velocity and wind direction. But in this research uses the parameters from Doppler spectrum, it calculates the rain rate. The rain rate estimation in this method will be compared to the obtained rain rate from the surface rain gauge. Two equipments are installed in the same area. The correlation coefficient between rain rate measuring method is 0.65.

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Fabrication of ZnSn Thin Films Obtained by RF co-sputtering

  • Lee, Seokhee;Park, Juyun;Kang, Yujin;Choi, Ahrom;Choi, Jinhee;Kang, Yong-Cheol
    • 통합자연과학논문집
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    • 제9권4호
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    • pp.223-227
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    • 2016
  • The Zn, Sn, and ZnSn thin films were deposited on Si(100) substrate using radio frequency (RF) magnetron co-sputtering method. A surface profiler and X-ray photoelectron spectroscopy (XPS) were used to investigate the Zn, Sn, and ZnSn thin films. Thickness of the thin films was measured by a surface profiler. The deposition rates of pure Zn and Sn thin films were calculated with thickness and sputtering time for optimization. From the survey XPS spectra, we could conclude that the thin films were successfully deposited on Si(100) substrate. The chemical environment of the Zn and Sn was monitored with high resolution XPS spectra in the binding energy regions of Zn 2p, Sn 3d, O 1s, and C 1s.

집속 아르곤 이온 레이저 빔을 이용한 레이저 유도 직접 구리 패터닝 (Laser-Induced Direct Copper Patterning Using Focused $Ar^+$ Laser Beam)

  • 이홍규;이경철;안민영;이천
    • 한국전기전자재료학회논문지
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    • 제13권11호
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    • pp.969-975
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    • 2000
  • Laser direct writing of micro-patterned copper lines has been achieved by pyrolytic decomposition of copper formate films (Cu(HCOO)$_2$.4$H_2O$), as a metallo-organic precursor, using a focused CW Ar$^{+}$ laser beam (λ=514nm) on PCB boards and glass substrates. The linewidth and thickness of the lines wee investigated as a functin of laser power and scan speed. The profiles of the lines were measured by scanning electron microscope (SEM), surface profiler ($\alpha$-step) and atomic force measured by scanning electron microscope (SEM), surface profiler ($\alpha$-step) and atomic force microscopy (AFM). The electrical resistivities of the patterned lines were also investigated as a function of laser parameters using probe station and semiconductor analyzer. We compared resistivities of the patterned copper lines with these of the Cu bulk. Resistivities decreased due to changes in morphology and porosity of the deposit, which were about 3.8 $\mu$$\Omega$cm and 12$\mu$$\Omega$cm on PCB and glass substrates after annealing at 30$0^{\circ}C$ for 5 minutes.s.

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SiO$_2$식각 특성 개선을 위한 E-ICP와 ICP 식각 비교 (Improvement of SiO$_2$Etching Characteristics by E-ICP)

  • 정재성;김진우;라상호;오범환;박세근
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1999년도 추계종합학술대회 논문집
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    • pp.887-890
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    • 1999
  • The etch characteristics of E-ICP and ICP are compared for the improvement of SiO$_2$ etch Process. Etch rate and etch pattern profile are measured by $\alpha$ -step surface profiler and SEM, respectively. The E-ICP provides improved characteristics on etch rate and surface profile in comparison to ICP process.

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