• Title/Summary/Keyword: Surface Profiler

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Verification of current and wave data observed with X-band radar at an offshore wind substantiation farm in the Southwest Sea (서남해 해상풍력실증단지에서 X-Band Radar로 관측한 유동 및 파랑 자료 검증)

  • Seung-Sam Choi;Eun-Pyo Lim;Hyung-Rae Lee;Kwang-Seok Moon;In-Sung Jeon;MINSEUK KIM
    • Journal of Wind Energy
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    • v.15 no.1
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    • pp.21-29
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    • 2024
  • In order to respond to environmental changes and various events in the nearby sea area due to the operation of an offshore wind substantiation farm in the Southwest Sea, X-band radar has been installed and operated on a fixed platform since 2018. The X-band radar's monitoring system produces wave and current data through Rutter's Ocean WaveS wave and current (Sigma S6 WaMoS II). In this study, to verify the reliability of the produced data, the accuracy of current and wave data was evaluated by analyzing the correlation with the results obtained by an acoustic doppler current profiler (ADCP). The selected analysis period was a total of 30 days from November 29 to December 28, 2021, the period during which the ADCP survey was conducted. As a result of comparative verification, the current, wave height and peak wave period (Hs > 0.69 m) data observed from the X-band radar showed a high correlation with the results investigated from ADCP. In the future, current and wave data produced by X-band radar are expected to be used as basic data to analyze environmental changes in sea areas and provide information on various events.

Estimation of the Surface Currents using Mean Dynamic Topography and Satellite Altimeter Data in the East Sea (평균역학고도장과 인공위성고도계 자료를 이용한 동해 표층해류 추산)

  • Lee, Sang-Hyun;Byun, Do-Seong;Choi, Byoung-Ju;Lee, Eun-Il
    • The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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    • v.14 no.4
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    • pp.195-204
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    • 2009
  • In order to estimate sea surface current fields in the East Sea, we examined characteristics of mean dynamic topography (MDT) fields (or mean surface current field, MSC) generated from three different methods. This preliminary investigation evaluates the accuracy of surface currents estimated from satellite-derived sea level anomaly (SLA) data and three MDT fields in the East Sea. AVISO (Archiving, Validation and Interpretation of Satellite Oceanographic data) provides a MDT field derived from satellite observation and numerical models with $0.25^{\circ}$ horizontal resolution. Steric height field relative to 500 dbar from temperature and salinity profiles in the East Sea supplies another MDT field. Trajectory data of surface drifters (ARGOS) in the East Sea for 14 years provide another MSC field. Absolute dynamic topography (ADT) field is calculated by adding SLA to each MDT. Application of geostrophic equation to three different ADT fields yields three surface geostrophic current fields. Comparisons were made between the estimated surface currents from the three different methods and in-situ current measurements from a ship-mounted ADCP (Acoustic Doppler Current Profiler) in the southwestern East Sea in 2005. For offshore areas more than 50 km away from the land, the correlation coefficients (R) between the estimated versus the measured currents range from 0.58 to 0.73, with 17.1 to $21.7\;cm\;s^{-1}$ root mean square deviation (RMSD). For coastal ocean within 50 km from the land, however, R ranges from 0.06 to 0.46 and RMSD ranges from 15.5 to $28.0\;cm\;s^{-1}$. Results from this study reveal that a new approach in producing MDT and SLA is required to improve the accuracy of surface current estimations for the shallow costal zones of the East Sea.

Plasma Etching Characteristics of Sapphire Substrate using $BCl_3$-based Inductively Coupled Plasma ($BCl_3$ 계열 유도결합 플라즈마를 이용한 사파이어 기판의 식각 특성)

  • Kim, Dong-Pyo;Woo, Jong-Chang;Um, Doo-Seng;Yang, Xue;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.363-363
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    • 2008
  • The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

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Pulsed DC $BCl_3/SF_6$ 플라즈마를 이용한 GaAs와 AlGaAs의 선택적 식각에 관한 연구

  • Choe, Gyeong-Hun;Kim, Jin-U;No, Gang-Hyeon;Sin, Ju-Yong;Park, Dong-Gyun;Song, Han-Jeong;Lee, Je-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.67-67
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    • 2011
  • Pulsed DC $BCl_3/SF_6$ 플라즈마를 사용하여 GaAs와 AlGaAs의 건식 식각을 연구하였다. 식각 공정 변수는 가스 유량 (50~100 % $BCl_3$ in $BCl_3/SF_6$), 펄스 파워 (450~600 V), 펄스 주파수 (100~250 KHz), 리버스 시간 (0.4~1.2 ${\mu}s$)이었다. 식각 공정 후 표면 단차 측정기 (Surface profiler)를 사용하여 표면의 단차와 거칠기를 분석하였다. 그 결과를 이용하여 식각률 (Etch rate), 표면거칠기 (Surface roughness), 식각 선택비 (Selectivity)와 같은 특성 평가를 하였다. 실험 후 주사 현미경 (FE-SEM, Field Emission Scanning Electron Microscopy)을 이용, 식각 후 시료의 단면과 표면을 관찰하였다. 실험 결과에 의하면 1) 18 sccm $BCl_3$ / 2 sccm $SF_6$, 500 V (Pulsed DC voltage), 0.7 ${\mu}s$ (Reverse time), 200 KHz (Pulsed DC frequency), 공정 압력이 100 mTorr인 조건에서 GaAs와 Al0.2Ga0.8As의 식각 선택비가 약 48:1로 우수한 결과를 나타내었다. 2) 펄스 파워 (Pulsed DC voltage), 리버스 시간(Reverse time), 펄스 주파수(Pulsed DC frequency)의 증가에 따라 각각 500~550 V, 0.7~1.0 ${\mu}s$, 그리고 200~250 KHz 구간에서 AlGaAs에 대한 GaAs의 선택비가 감소하게 되는 것을 알 수 있었다. 이는 척 (chuck)에 인가되는 전류와 파워를 증가시키고, 따라서 GaAs의 식각률이 크게 증가했지만 AlGaAs 또한 식각률이 증가하게 되면서 GaAs에 대한 식각 선택비가 감소한 것으로 생각된다. 3) 표면 단차 측정기와 주사전자현미경 사진 결과에서는 GaAs의 경우 10% $SF_6$ (18 sccm $BCl_3$ / 2 sccm $SF_6$)가 혼합된 조건에서 상당히 매끈한 표면 (RMS roughness < 1.0 nm)과 높은 식각률 (~0.35 ${\mu}m$/min), 수직의 식각 측벽 확보에서 매우 좋은 결과를 보여주었다. 또한 같은 공정 조건에서 AlGaAs는 식각이 거의 되지 않은 결과 (~0.03 ${\mu}m$/min)를 보여주었다. 위의 결과들을 종합해 볼 때 Pulsed DC $BCl_3/SF_6$ 플라즈마는 GaAs와 AlGaAs의 선택적 식각 공정에서 매우 우수한 공정 결과를 나타내었다.

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미세금형 가공을 위한 전기화학식각공정의 유한요소 해석 및 실험 결과 비교

  • Ryu, Heon-Yeol;Im, Hyeon-Seung;Jo, Si-Hyeong;Hwang, Byeong-Jun;Lee, Seong-Ho;Park, Jin-Gu
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.81.2-81.2
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    • 2012
  • To fabricate a metal mold for injection molding, hot-embossing and imprinting process, mechanical machining, electro discharge machining (EDM), electrochemical machining (ECM), laser process and wet etching ($FeCl_3$ process) have been widely used. However it is hard to get precise structure with these processes. Electrochemical etching has been also employed to fabricate a micro structure in metal mold. A through mask electrochemical micro machining (TMEMM) is one of the electrochemical etching processes which can obtain finely precise structure. In this process, many parameters such as current density, process time, temperature of electrolyte and distance between electrodes should be controlled. Therefore, it is difficult to predict the result because it has low reliability and reproducibility. To improve it, we investigated this process numerically and experimentally. To search the relation between processing parameters and the results, we used finite element simulation and the commercial finite element method (FEM) software ANSYS was used to analyze the electric field. In this study, it was supposed that the anodic dissolution process is predicted depending on the current density which is one of major parameters with finite element method. In experiment, we used stainless steel (SS304) substrate with various sized square and circular array patterns as an anode and copper (Cu) plate as a cathode. A mixture of $H_2SO_4$, $H_3PO_4$ and DIW was used as an electrolyte. After electrochemical etching process, we compared the results of experiment and simulation. As a result, we got the current distribution in the electrolyte and line profile of current density of the patterns from simulation. And etching profile and surface morphologies were characterized by 3D-profiler(${\mu}$-surf, Nanofocus, Germany) and FE-SEM(S-4800, Hitachi, Japan) measurement. From comparison of these data, it was confirmed that current distribution and line profile of the patterns from simulation are similar to surface morphology and etching profile of the sample from the process, respectively. Then we concluded that current density is more concentrated at the edge of pattern and the depth of etched area is proportional to current density.

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Effect of Metal Interlayers on Nanocrystalline Diamond Coating over WC-Co Substrate (초경합금에 나노결정질 다이아몬드 코팅 시 금속 중간층의 효과)

  • Na, Bong-Kwon;Kang, Chan Hyoung
    • Journal of the Korean institute of surface engineering
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    • v.46 no.2
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    • pp.68-74
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    • 2013
  • For the coating of diamond films on WC-Co tools, a buffer interlayer is needed because Co catalyzes diamond into graphite. W and Ti were chosen as candidate interlayer materials to prevent the diffusion of Co during diamond deposition. W or Ti interlayer of $1{\mu}m$ thickness was deposited on WC-Co substrate under Ar in a DC magnetron sputter. After seeding treatment of the interlayer-deposited specimens in an ultrasonic bath containing nanometer diamond powders, $2{\mu}m$ thick nanocrystalline diamond (NCD) films were deposited at $600^{\circ}C$ over the metal layers in a 2.45 GHz microwave plasma CVD system. The cross-sectional morphology of films was observed by FESEM. X-ray diffraction and visual Raman spectroscopy were used to confirm the NCD crystal structure. Micro hardness was measured by nano-indenter. The coefficient of friction (COF) was measured by tribology test using ball on disk method. After tribology test, wear tracks were examined by optical microscope and alpha step profiler. Rockwell C indentation test was performed to characterize the adhesion between films and substrate. Ti and W were found good interlayer materials to act as Co diffusion barriers and diamond nucleation layers. The COFs on NCD films with W or Ti interlayer were measured as less than 0.1 whereas that on bare WC-Co was 0.6~1.0. However, W interlayer exhibited better results than Ti in terms of the adhesion to WC-Co substrate and to NCD film. This result is believed to be due to smaller difference in the coefficients of thermal expansion of the related films in the case of W interlayer than Ti one. By varying the thickness of W interlayer as 1, 2, and $4{\mu}m$ with a fixed $2{\mu}m$ thick NCD film, no difference in COF and wear behavior but a significant change in adhesion was observed. It was shown that the thicker the interlayer, the stronger the adhesion. It is suggested that thicker W interlayer is more effective in relieving the residual stress of NCD film during cooling after deposition and results in stronger adhesion.

Investigation on the optical, structural and electrical properties of the RF sputtered layers obtained from CuInSe2 single precursors (CuInSe2 단일전구체에서 스퍼터링된 박막의 광학적, 구조적 및 전기적 특성평가)

  • Jeong, Chaehwan;Kim, Saerok;Kim, Jinhyeok;Kim, Kwangbok
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.78.2-78.2
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    • 2010
  • Cu(In,Ga)Se2 (CIGS)박막태양전지는 간단한구조와 가격경쟁력 및 고효율화 가능성에 대한 기대감에 의해 많은 연구가 수행되어오고 있다. 특히 높은 흡수계수와 적절한 밴드갭, 큰 결정크기와 같은 물질의 특성들이 장점으로 작용하고 있기 때문이다. 또한 CIGS박막태양전지는 다른 태양전지에 비해 광열화가 적다는 장점도 가지고 있다. CIGS 박막은 CuInSe2내의 In 사이트에 Ga을 도핑함으로서 형성이 되는데 그때의 밴드갭은 약 1.4eV이며 이를 형성하기 위해 많은 방법들이 제안되고 있는데, CIGS박막 형성 시 가장 중요시 여겨야 될 인자는 구성원소로부터 최적화된 조성비를 찾는 것이다. 이러한 관점에서 볼때 evaporation법이나 sputtering법같은 진공방식의 공정법이 비진공방식에 비해 최적의 조성비를 찾는 것이 수월할 것으로 생각된다. selenization을 하기전에, 동시증착이나 다층박막형성을 통해 Cu-In-Se의 조합이 일반적으로 이루어진다. 어떤방법이든 Se의 부가적인 공급이 이루어지는데 시작 전구체의 조합에서 그 해법을 제시하는 것에 대한 논의가 많이 부족한 현실로서, CuInSe2의 단일전구체에 의한 박막형성과 특성평가에 대해 구체적인 논의가 필요하다. 본 실험에서는 Cu-In-Se 전구체를 CuInSe2 단일 타겟에서부터 RF 마그네트론 스퍼터링법을 이용하여 박막증착을 하여 Se의 Rapid Thermal Process(RTA)법을 통해 Se이 순차적으로 공급되었다. 이때 형성되는 박막의 태양전지 흡수층 적용을 위한 광학적, 전기적 및 구조적에 대한 논의된다. Soda lime glass(SLG)와 Corning 1737 유리를 기판으로 하여 아세톤-에탄올을 이용, 초음파세척을 실시하였다. 스퍼터 공정을 하기전에 흡착된 물분자를 제거하기 위하여 약 30분간 $120^{\circ}C$로 열을 가해주었으며, 공정을 위한 총 아르곤 가스의 양은 약 50sccm이며 이때의 공정압력은 20mtorr로 고정하였다. 우선 RF power와 기판온도에 따른 단일전구체 형성을 관찰하기 위하여 각각 30~80W, RT~$400^{\circ}C$로 변화를 주어 박막을 형성한 후 모든 sample에 대하여 $500^{\circ}C$분위기에 effusion cell을 이용하여 Se 분위기에서 결정화를 실시하였다. 샘플의 두께는 Surface profiler로 측정하였고 단면은 전자주사현미경으로 관찰되었다. 동시에 SEM이미지를 통하여 morphology와 grain size 및 EDX를 통하여 조성분석을 하였다. 밴드갭, 투과율 및 흡수계수는 UV-VIS-NIR분광분석법을 통하여 수행되었으며, 전기적 특성분석을 위해 4-point-probe와 Hall effect측정을 수행하였다. 공정변수에 따른 단일타겟으로 얻어 결정화된 CuInSe2박막의 자세한 결과와 논의에 대하여 발표한다.

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Characteristics of Meteorological Variables in the Leeward Side associated with the Downslope Windstorm over the Yeongdong Region (영동지역 지형성 강풍과 관련된 풍하측 기상요소의 특징)

  • Cho, Young-Jun;Kwon, Tae-Yong;Choi, Byoung-Cheol
    • Journal of the Korean earth science society
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    • v.36 no.4
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    • pp.315-329
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    • 2015
  • We investigated the characteristics of meteorological conditions related to the strong downslope wind over the leeward side of the Taebaek Mountains during the period 2005~2010. The days showing the strong wind exceeding $14ms^{-1}$ in Gangwon province were selected as study cases. A total of 15 days of strong wind were observed at Sokcho, Gangneung, Donghae, and Taebaek located over the Yeongdong region. Seven cases related to tropical cyclone (3 cases) and heavy snowfall (2 cases) and heavy rainfall (2 cases) over the Yeongdong region were excluded. To investigate the characteristics of the remaining 8 cases, we used synoptic weather chart, Sokcho radiosonde, Gangneung wind profiler and numerical model. The cases showed no precipitation (or ${\leq}1mm\;day^{-1}$). From the surface and upper level weather chart, we found the pressure distribution of southern high and northern low pattern over the Korean peninsula and warm ridge over the Yeongdong region. Inversion layer (or stable layer) and warm ridge with strong wind were located in about 1~3 km (925~700 hPa) over mountains. The Regional Data Assimilation and Prediction System (RDAPS) indicated that warm core and temperature ridge with horizontal temperature gradient were $0.10{\sim}0.23^{\circ}C\;km^{-1}$ which were located on 850 hPa pressure level above mountaintop. These results were summarized as a forecasting guidance of downslope windstorm in the Yeongdong region.

Development of Yeongdong Heavy Snowfall Forecast Supporting System (영동대설 예보지원시스템 개발)

  • Kwon, Tae-Yong;Ham, Dong-Ju;Lee, Jeong-Soon;Kim, Sam-Hoi;Cho, Kuh-Hee;Kim, Ji-Eon;Jee, Joon-Bum;Kim, Deok-Rae;Choi, Man-Kyu;Kim, Nam-Won;Nam Gung, Ji Yoen
    • Atmosphere
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    • v.16 no.3
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    • pp.247-257
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    • 2006
  • The Yeong-dong heavy snowfall forecast supporting system has been developed during the last several years. In order to construct the conceptual model, we have examined the characteristics of heavy snowfalls in the Yeong-dong region classified into three precipitation patterns. This system is divided into two parts: forecast and observation. The main purpose of the forecast part is to produce value-added data and to display the geography based features reprocessing the numerical model results associated with a heavy snowfall. The forecast part consists of four submenus: synoptic fields, regional fields, precipitation and snowfall, and verification. Each offers guidance tips and data related with the prediction of heavy snowfalls, which helps weather forecasters understand better their meteorological conditions. The observation portion shows data of wind profiler and snow monitoring for application to nowcasting. The heavy snowfall forecast supporting system was applied and tested to the heavy snowfall event on 28 February 2006. In the beginning stage, this event showed the characteristics of warm precipitation pattern in the wind and surface pressure fields. However, we expected later on the weak warm precipitation pattern because the center of low pressure passing through the Straits of Korea was becoming weak. It was appeared that Gangwon Short Range Prediction System simulated a small amount of precipitation in the Yeong-dong region and this result generally agrees with the observations.

Accuracy Analysis of Velocity and Water Depth Measurement in the Straight Channel using ADCP (ADCP를 이용한 직선 하천의 유속 및 수심 측정 정확도 분석)

  • Kim, Jongmin;Kim, Dongsu;Son, Geunsoo;Kim, Seojun
    • Journal of Korea Water Resources Association
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    • v.48 no.5
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    • pp.367-377
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    • 2015
  • ADCPs have been highlighted so far for measuring steramflow discharge in terms of their high-order of accuracy, relatively low cost and less field operators driven by their easy in-situ operation. While ADCPs become increasingly dominant in hydrometric area, their actual measurement accuracy for velocity and bathymetry measurement has not been sufficiently validated due to the lack of reliable bench-mark data, and subsequently there are still many uncertain aspects for using ADCPs in the field. This research aimed at analyzing inter-comparison results between ADCP measurements with respect to the detailed ADV measurement in a specified field environment. Overall, 184 ADV points were collected for densely designed grids for the given cross-section that has 6 m of width, 1 m of depth, and 0.7 m/s of averaged mean flow velocity. Concurrently, ADCP fixed-points measurements were conducted for each 0.2m and 0.02m of horizontal and vertical spacing respectively. The inter-comparison results indicated that ADCP matched ADV velocity very accurately for 0.4~0.8 of relative depth (y/h), but noticeable deviation occurred between them in near surface and bottom region. For evaluating the capacity of measuring bathymetry of ADCPs, bottom tracking bathymetry based on oblique beams showed better performance than vertical beam approach, and similar results were shown for fixed and moving-boat method as well. Error analysis for velocity and bathymetry measurements of ADCP can be potentially able to be utilized for the more detailed uncertainty analysis of the ADCP discharge measurement.