• Korean Chemical Engineering Research
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• v.51 no.5
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• pp.622-627
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• 2013

Colloidal silica is used in various industrial products such as chemical mechanical polishing slurry for planarization of silicon and sapphire wafer, organic-inorganic hybrid coatings, binder of investment casting, etc. An accurate determination of particle size and dispersion stability of silica sol is demanded because it has a strong influence on surface of wafer, film of coatings or bulks having mechanical, chemical and optical properties. The study herein is discussed on the effect of measurement results of average particle size, sol viscosity and electrophoretic mobility of particle according to the volume fraction of eight types of silica sol with different size and surface properties of silica particles which are presented by the manufacturer. The measured particle size and the mobility of these sol were changed by volume fraction or particle size due to highly active surface of silica particle and change of concentration of counter ion by dilution of silica sol. While in case the measured sizes of small particles less than 60 nm are increased with increasing volume fraction, the measured sizes of larger particles than 60 nm are slightly decreased. The mobility of small particle such as 12 nm are decreased with increase of viscosity. However, the mobility of 100 nm particles under 0.048 volume fraction are increased with increasing volume fraction and then decreased over higher volume fraction.

• Journal of the Korean institute of surface engineering
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• v.40 no.3
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• pp.144-148
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• 2007

To prepare the transparent electrode for electronic devices such as flat panel or flexible displays, solar cells, and touch panels; tin doped $In_2O_3$ (ITO) films with low resistivity and a high transparency were fabricated using a facing target sputtering (FTS) system at the various oxygen gas flow rate. The carrier concentration and mobility of ITO films were measured by Hall Effect measurement. And the transmittance was measured using the UV-VIS spectrometer. As a result, we can obtain the ITO thin films prepared at 10% oxygen gas flow ratio, thickness 150 nm with transmittance 85% and resistivity $8.1{\times}10^{-4}{\Omega}cm$ and surface roughness 5.01 nm.

• Journal of the Korean Society for Heat Treatment
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• v.31 no.5
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• pp.237-243
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• 2018

In-rich InGaN epilayers were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). InGaN epilayers grown at various growth condition were observed by SEM, XRD, and RHEED. When plasma power of nitrogen increased from 290 to 350 W, surface morphology and crystal quality became worse according to more active nitrogen on the surface of InGaN at N-rich growth condition. As In composition was reduced from 89 to 71% by changing the incoming flux of In and Ga, surface morphology and crystal quality became worse. In addition, weak peaks of cubic InGaN phase was observed from InGaN layer with 71% In composition by XRD ${\Phi}$ scan measurement. When growth temperature decreased from 500 to $400^{\circ}C$, RHEED diffraction pattern was changed to be from streaky to spotty which means atomically rough surface, and spotty pattern showed cubic symmetry of InGaN clearly. XRD ${\Phi}$ scan measurement gave clear evidence that more cubic InGaN phase was formed at low growth temperature. All these results indicates that extremely low surface mobility of Ga adatom caused inferior crystal quality and cubic InGaN phase.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.55-55
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• 2018

Recently, amorphous oxides such as InGaZnO (IGZO) and InZnO (IZO) as a channel layer of an oxide TFT have been attracted by advantages such as high mobility, good uniformity, and high transparency. In order to apply such an amorphous oxide TFTs to a display, the stability in various environments must be ensured. In the InGaZnO which has been studied in the past, Ga elements act as a suppressor of oxygen vacancy and result in a decreased mobility at the same time. Previous studies have been showed that the InZnO, which does not contain Ga, can achieve high mobility, but has relatively poor stability under various instability environments. In this study, the TFTs using $IZO/Al_2O_3$ double layer structure were studied. The introduction of an $Al_2O_3$ interlayer between source/drain and channel causes superior electrical characteristics and electrical stability as well as reduced contact resistance with optimally perfect ohmic contact. For the IZO and $Al_2O_3$ bilayer structures, the IZO 30nm IZO channels were prepared at $Ar:O_2=30:1$ by sputtering and the $Al_2O_3$ interlayer were depostied with various thickness by ALD at $150^{\circ}C$. The optimal sample exhibits considerably good TFT performance with $V_{th}$ of -3.3V and field effect mobility of $19.25cm^2/Vs$, and reduced $V_{th}$ shift under positive bias stress stability, compared to conventional IZO TFT. The enhanced TFT performances are closely related to the nice ohmic contact properties coming from the defect passivation of the IZO surface inducing charge traps, and we will provide the detail mechanism and model via electrical analysis and transmission line method.

• Corrosion Science and Technology
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• v.22 no.6
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• pp.447-456
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• 2023

In this work, we performed a comparative study examining two coatings on Ti Gr.1 for use in fuel cell bipolar plates. The coatings consisted of carbon black as the conductor along with acrylic polymer and Ti Sol-Gel binder as the binder. Ti Sol-Gel that had precipitated as TiO₂ in areas impregnated between carbon black gaps, thereby acting as a binder for carbon black and serving as a polymer coating. Neither of the coatings peeled off during the 90° bend test to check formability. The contact resistance of the TiO₂ coating was found to be lower than that of the polymer binder coating. Moreover, due to coating shrinkage (denser) that occurred during the heat treatment process, the TiO₂ binder coating showed almost the same level of corrosion resistance, as measured by potentiostatic and EIS tests, despite being thinner than the polymer coating. However, both the polymer binder coating and the TiO₂ binder coating had many pores and irregularities internally (around 10 ~ 100 nm) and on the surface (0.1 ~ 2 ㎛). We considered that these pores and irregularities contributed to the lower corrosion resistance.

• Journal of the Korean Society of Physical Medicine
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• v.12 no.3
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• pp.79-84
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• 2017

PURPOSE: The purpose of this study is to examine how task-oriented training focused on lower extremity strengthening can affect mobility function and postural stability. METHODS: The study's subjects included 10 children with cerebral palsy: 7 girls and 3 boys between the ages of 4 and 9 whose Gross Motor Functional Classification System (GMFCS) level was I or II. Their functional mobility was gauged using the Gross Motor Function Measurement (GMFM), and their postural stability was evaluated using a force platform. Participants received task-oriented training focused on lower extremity strengthening for 5 weeks. The study used a paired t-test to investigate the difference in mobility function and postural stability of children with cerebral palsy before and after the lower extremity strengthening exercise. RESULTS: The GMFM dimensions D (standing) (p<.02) and E (walking) (p<.001) improved significantly between the pre-test and post-test. A significant increase in the posturographic center of pressure (CoP) shift and surface area of the CoP were found overall between the pre-test and post-test (p<.001). CONCLUSION: The present study provides evidence that an 8-week task-oriented training focused on strengthening the lower extremities is an effective and feasible strategy for improving the mobility function and postural stability of children with cerebral palsy.

• Transactions on Electrical and Electronic Materials
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• v.18 no.6
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• pp.323-329
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• 2017

This reports the electrical behavior, bonding structure and Schottky contact of gallium-zinc-oxide (GZO) thin film annealed at $100{\sim}400^{\circ}C$. The mobility of GZO with high density of PL spectra and crystal structure was also increased because of the structural matching between GZO and Si substrate of a crystal structure. However, the GZO annealed at $200^{\circ}C$ with an amorphous structure had the highest mobility as a result of a band to band tunneling effect. The mobility of GZO treated at low annealing temperatures under $200^{\circ}C$ increased at the GZO with an amorphous structure, but that at high temperatures over $200^{\circ}C$ also increased when it was the GZO of a crystal structure. The mobility of GZO with a Schottky barrier (SB) was mostly increased because of the effect of surface currents as well as the additional internal potential difference.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.972-973
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• 2007

Relationships between field effect mobility and grain size on pentacene thin-film transistors with $polyimide/SiO_2$ gate dielectrics have been studied. 6 kinds of polyimide were used as surface treatment gate dielectric layer. Grain size of the pentacene thin film were between 5 and $30\;{\mu}m$ and depended on the polyimide. The field effect mobility were also depended on the polyimide and the those values were from 0.027 to $0.69\;cm^2/(Vs)$. The field effect mobility tends to increase with increasing the grain size. Precursor type polyimide containing polyamic acid show better mobility of $0.69\;cm^2/(Vs)$ than soluble type polyimide. Bias stress characteristics in air are discussed in the basis of the grain size.

• Journal of the Korean institute of surface engineering
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• v.38 no.1
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• pp.7-13
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• 2005

Bismuth thin films were prepared on glass substrate with RF magnetron sputtering and effects of substrate temperature on surface morphology and their electrical transport properties were investigated. Grain growth of bismuth after nucleation and the onset of coalescense of grains at 393 K were observed with field emission secondary electron microscopy. Continuous thin films could not be obtained above 473 K because of grain segregation and island formation. Hall effect measurements showed that substrate heating yields the decrease of carrier density and the increase of mobility. Resistivity of bismuth film has its minimum (about 0.7 x 10/sup -3/ Ωcm) in range of 403～433 K. Annealing of bismuth films deposited at room temperature was carried out in a radiation furnace with flowing hydrogen gas. The change of resistivity was not significant due to cancellation of the decrease of carrier density and the increase of mobility. The abrupt change of electrical properties of film annealed above 523 K was found to be caused by partial oxidation of bismuth layer in x-ray diffraction analysis.

• Journal of Adhesion and Interface
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• v.24 no.2
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• pp.64-68
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• 2023

Organic field-effect transistors (OFETs) are attracting attention in the field of next-generation electronic devices, and they can be fabricated on a flexible substrate using an organic semiconductor as a channel layer. In particular, DPP-based semiconducting conjugated polymers are actively used because they have higher charge carrier mobility than other organic semiconductors, but they are still lower than inorganic semiconductors, so various studies are being conducted to improve the charge carrier mobility. In this study, the charge carrier mobility is improved by controlling the surface energy of the substrate by forming self-assembled monolayers (SAMs). As the surface energy of the substrate is controlled by the SAMs, the crystallinity increases, thereby improving the charge carrier mobility by 14 times from 3.57×10^-3 cm²V^-1s^-1 to 5.12×10^-2 cm²V^-1s^-1