• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.145-152
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• 1992

Si surfaces exposed to CHF3/C2F6 gas plasmas ih reactive ion etching (RIE) have been characterized by X-ray photoelectron spectroscopy (XPS). CHF3/C2F6 gas plasma exposure of Si surface leads to the deposition of residual film containing carbon and fluorine. The narrow scan spectra of C 1s show various bonding states of carbon as C-Si, C-F/H, C-CFx(x $\leq$ 3), C-F, C-F2, and C-F3. The chemical bonding states of fluorine are described with F-Si, F-C and F-O. And the oxygen and silicon are also detected. The effects of parameters for reactive ion etching as CHF3/C2F6 gas ratio, RF power, and pressure are investigated.

• 한국전산유체공학회:학술대회논문집
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• 2010.05a
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• pp.562-566
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• 2010

Numerical analysis of 150kW Huels-type arc jet was performed using compressible Navier-Stokes CFD code. To consider chemical reaction by high temperature, the flow was assumed to be chemical equilibrium states. As a turbulence and a radiation model, the two-equation k-epsilon model and the 3-band radiation model were adopted, respectively. Mass flow rate and current density were given as conditions for calculations. In this study, two kinds of mechanisms for injection of air flow wire considered. One is that air is provided by left wall surface and the other is that air is injected from upper wall surface. The pressure, density and temperature contours of two cases were compared and heat transfer rates were estimated. The numerical results of two cases were not much different to each other. However, in real 150KW device, air is injected from upper wall surface with swirl. To calculate more accurately, swirl effect is must be considered.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.35-35
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• 2001

agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).

• Applied Chemistry for Engineering
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• v.32 no.4
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• pp.385-392
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• 2021

In this study, impact of Co proportion and calcination temperature of ceria on the Co/CeO₂ was analyzed by comparing nitrogen monoxide oxidation performance of various catalysts and their physico-chemical properties. The structural properties of each catalyst were studied by XRD and BET analysis, and the surface crystal states of cobalt were proposed according to the surface density. Oxidation states of elements were observed through Raman and XPS analysis, and the relationship between typical oxidation states and nitrogen monoxide oxidation performance was designed. Through H₂-TPR, oxygen-transferring capacity due to changes in the characteristics of catalysts were identified, and activation sites (Co³⁺) for oxidation were suggested.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.128.1-128.1
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• 2013

We investigated the correlation between electrical transport and mechanical stress in $Bi_2Te_2Se$ by using a conductive probe atomic force microscopy in an ultra-high vacuum environment. Uniform distribution of measured friction and current were observed over a single quintuple layer terrace, which is an indication of the uniform chemical composition of the surface. By measuring the charge transport of $Bi_2Te_2Se$ surface as a function of the load applied by a tip to the sample, we found that the current density varies with applied load. The variation of current density was explained in light of the combined effect of the changes in the in-plane conductance and spin-orbit coupling that were theoretically predicted. We suppose that the local density of states is modified by tip-induced strain, but topological phase still remains. We exposed a clean topological insulator surface by tip-induced indentation. The surface conductance on the indented $Bi_2Te_2Se$ surface was studied, and the role of surface oxide on the surface conductance is discussed.

• Bulletin of the Korean Chemical Society
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• v.20 no.10
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• pp.1136-1144
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• 1999

The collision-induced reaction of gas-phase atomic hydrogen with hydrogen atoms chemisorbed on a silicon (001)-(2×1) surface is studied by use of the classical trajectory approach. The model is based on reaction zone atoms interacting with a finite number of primary system silicon atoms, which then are coupled to the heat bath, i.e., the bulk solid phase. The potential energy of the Hads‥Hgas interaction is the primary driver of the reaction, and in all reactive collisions, there is an efficient flow of energy from this interaction to the Hads-Si bond. All reactive events occur on a subpicosecond scale, following the Eley-Rideal mechanism. These events occur in a localized region around the adatom site on the surface. The reaction probability shows the maximum near 700K as the gas temperature increases, but it is nearly independent of the surface temperature up to 700 K. Over the surface temperature range of 0-700 K and gas temperature range of 300 to 2500 K, the reaction probability lies at about 0.1. The reaction energy available for the product states is small, and most of this energy is carried away by the desorbing H2 in its translational and vibrational motions. The Langevin equation is used to consider energy exchange between the reaction zone and the bulk solid phase.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.1-6
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• 2000

The mechanical strength of silicon carbide dose nor permit the use of diffusion as a means to achieve selective doping as required by most electronic devices. While epitaxial layers may be doped during growth, ion implantation is needed to define such regions as drain and source wells, junction isolation regions, and so on. Ion activation without an annealing cap results in serious crystal damage as these activation processes must be carried out at temperatures on the order of 1600$^{\circ}C$. Ion implanted silicon carbide that is annealed in either a vacuum or argon environment usually results in a surface morphology that is highly irregular due to the out diffusion of Si atoms. We have developed and report a successful process of using silicon overpressure, provided by silane in a CAD reactor during the anneal, to prevent the destruction of the silicon carbide surface, This process has proved to be robust and has resulted in ion activation at a annealing temperature of 1600$^{\circ}C$ without degradation of the crystal surface as determined by AFM and RBS. In addition XPS was used to look at the surface and near surface chemical states for annealing temperatures of up to 1700$^{\circ}C$. The surface and near surface regions to approximately 6 nm in depth was observed to contain no free silicon or other impurities thus indicating that the process developed results in an atomically clean SiC surface and near surface region within the detection limits of the instrument(${\pm}$1 at %).

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.170.1-170.1
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• 2016

$Bi_2Te_3$ has long been studied for its excellent thermoelectric characteristics. Recently, this material has been known as a topological insulator (TI). The surface states within the bulk band gap of a TI, which are protected by the time reversal symmetry, contribute to the conduction at the surface, while the bulk is in insulating state. In contrast to the bulk defects tuning the chemical potential to the Dirac energy, the native defects near the surface are expected not to change the shape of the Fermi surface and the related spin structure. Using scanning tunneling microscopy (STM), we have systematically characterized surface or near surface defects in p- and n- doped $Bi_2Te_3$, and identified their structure by first principles calculations. In addition, bias-polarity dependences of STM images revealed the electron donor/acceptor nature of each defect. A detailed theoretical study of the surface states near the Dirac energy reveals the robustness of the Dirac point, which verifies the effectiveness of the disturbance on the backscattering from various kinds of defects.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.57.1-57.1
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• 2010

Development of low cost hybrid functional nano-structured materials has great interest to enhance sensitivity of dye-sensitized solar cells and reduction of the production cost. In this talk we will discuss about using different processes to modify functional characteristics of photoelectrode and investigate effects of chemical modification without significant structural variation on to enhance performance of DSSCs. Efficient electron transportation between dye molecules and photoelectrode has been obtained by appropriate chemical modification and efficiency of DSSC has been significantly improved. A comparative analysis on effects of surface functional and electron states of photoelectrode on VOC and JSC has been also carried out to discuss effects of composite materials on physical structure and electronic properties to correlate enhanced performance of these devices.

• Bulletin of the Korean Chemical Society
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• v.27 no.3
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• pp.363-367
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• 2006

The structure-property relations of ternary copper chalcogenides, $TlCu_{3-x}S_2$ and $\alpha-BaCu_{2-x}S_2$ are examined. The density of states, band dispersions, and Fermi surfaces of these compounds are investigated to verify the reason of the metal-insulator transitions by extended Huckel tight-binding band calculations. The origin of the metalinsulator transitions of non-stoichiometric $TlCu_{3-x}S_2$ and $\alpha-BaCu_{2-x}S_2$ is thought to be the electronic instability induced by their Fermi surface nesting.