• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.304.1-304.1
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• 2014

Flat-panel displays have been growing as an essential everyday product in the current information/communication ages in the unprecedented speed. The forward-coming applications require light-weightness, higher speed, higher resolution, and lower power consumption, along with the relevant cost. Such specifications demand for a new concept-based materials and applications, unlike Si-based technologies, such as amorphous Si and polycrystalline Si thin film transistors. Since the introduction of the first concept on the oxide-based thin film transistors by Hosono et al., amorphous oxide thin film transistors have been gaining academic/industrial interest, owing to the facile synthesis and reproducible processing despite of a couple of shortcomings. The current work places its main emphasis on the binary oxides composed of ZnO and SnO2. RF sputtering was applied to the fabrication of amorphous oxide thin film devices, in the form of bottom-gated structures involving highly-doped Si wafers as gate materials and thermal oxide (SiO2) as gate dielectrics. The physical/chemical features were characterized using atomic force microscopy for surface morphology, spectroscopic ellipsometry for optical parameters, X-ray diffraction for crystallinity, and X-ray photoelectron spectroscopy for identification of chemical states. The combined characterizations on Zn-Sn-O thin films are discussed in comparison with the device performance based on thin film transistors involving Zn-Sn-O thin films as channel materials, with the aim to optimizing high-performance thin film transistors.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.164-168
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• 2011

Nanocrystalline cadmium sulphide (CdS) thin films were prepared using chemical bath deposition (CBD), and the structural, optical and photoconductive properties were investigated. The crystal structure of CdS thin film was studied by X-ray diffraction. The crystallite size, dislocation density and lattice constant of CBD CdS thin films were investigated. The dislocation density of CdS thin films initially decreases with increasing film thickness, and it is nearly constant over the thickness of 2,500 ${\AA}$. The dislocation density decreases with increasing the crystallite size. The Urbach energies of CdS thin films are obtained by fitting the optical absorption coefficient. The optical band gap of CdS thin films increases and finally saturates with increasing the lattice constant. The Urbach energy and optical band gap of the 2,900 A-thick CdS thin film prepared for 60 minutes are 0.24 eV and 2.83 eV, respectively. The activation energies of the 2,900 ${\AA}$-thick CdS thin film at low and high temperature regions were 14 meV and 31 meV, respectively. It is considered that these activation energies correspond to donor levels associated with shallow traps or surface states of CdS thin film. Also, the value of ${\gamma}$ was obtained from the light transfer characteristic of CdS thin film. The value of ${\gamma}$ for the 2,900 A-thick CdS thin film was 1 at 10 V, and it saturates with increasing the applied voltage.

• Journal of the Korean Chemical Society
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• v.28 no.5
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• pp.271-278
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• 1984

Ellipsometric and reflectance measurements were made with magneto-optically self-nulling ellipsometer on the iron surface being passivated. The passivation was induced by abruptly changing potential of the mechanically polished high purity iron from the reduction potential to the oxidation potential in basic solutions. From the differences in the optical paramates(${\Delta},\;{\psi}$) and reflectance (R) between the reduced (film-free) and oxidized (film-covered) states, the thickness(${\tau}$) and optical constants (n, k) of the film in the early stage of its formation were computed as functions of pH and time. From the computed values, it was deduced that the properties of the anodic film did not undergo a drastic change with time which would indicate a transformation of the film before effective passivity is attained, and that the film reached its stady state within a few second. The thickness of anodic film was $14\;{\sim}\;23{\AA}$. The anodic films also seemed to have small values of optical absorption coefficient. The film formed in high pH environments had thinner and denser structure than that formed in low pH.

• Bulletin of the Korean Chemical Society
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• v.7 no.5
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• pp.395-399
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• 1986

Intramolecular proton transfer equilibria of acetamide and methyl carbamate have been studied theoretically by MNDO MO method. For both substrates, carbonyl-O protonated tautomer was found to be the most stable form, the next most stable one being N-protonated form. Gas phase proton transfers take place by the 1,3-proton rearrangement process and in all cases have prohibitively high activation barriers. When however one solvate water molecule participates in the process, the barriers are lowered substantially and the process proceeds in an intermolecular manner through the intermediacy of the water molecule via a triple-well type potential energy surface; three wells correspond to reactant(RC), intermediate(IC) and product complex(PC) of proton donor-acceptor pairs whereas two transition states(TS) have proton-bridge structure. General scheme of the process can be represented for a substrate with two basic centers(heteroatoms) of A and B as, $$ABH\limits^+\;+\;H_2O\;{\to}\;ABH\limits^+{\cdots}{\limits_{RC}}OH_2\;{\to}\;AB{\cdots}H\limits_{TS}^+{\cdots}{\limits_{1}}OH_2\;{\to}\;AB{\cdots}{\limits_{IC}}H\limits^+OH_2\;{\to}\;BA{\cdots}H\limits_{TS}^+{\cdots}{\limits_{2}}OH_2\;{\to}\;BA H\limits^+{\cdots}{\limits_{PC}}OH_2\;{\to}\;BAH\limits^+\;+\;H_2O$$ Involvement of a second solvate water had negligible effect on the relative stabilities of the tautomers but lowered barrier heights by 5∼6 Kcal/mol. It was calculated that the abundance of the methoxy-O protonated tautomer of the methyl carbamate will be negligible, since the tautomer is unfavorable thermodynamically as well as kinetically. Fully optimized stationary points are reported.

• Applied Chemistry for Engineering
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• v.30 no.1
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• pp.23-28
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• 2019

We report a supercapacitor cable, which consists of three-dimensional (3D) porous graphene coated onto the surface of carbon thread. The 3D porous framework of graphene was constructed by microwave-activated process using a graphene oxide-coated carbon thread. The use of microwave irradiation enabled to convert graphene oxide into reduced graphene oxide without any reducing agents and activate graphene sheets into exfoliated and porous graphene sheets. Combining two wire electrodes with a polymer gel electrolyte successfully completed supercapacitor device in a form of cable construction. The supercapacitor cables were highly flexible, and thus can be transformed into various shapes of devices and be integrated into textile items. A high area-capacitance of 38.1 mF/cm was obtained at a scan rate of 10 mV/s. This capacitance was retained 88% of its original value at 500 mV/s. The cycle life was also demonstrated by repeating a charge/discharge process during 10,000 cycles even under bent states, showing a high capacitance retention of 96.5%.

• Archives of Metallurgy and Materials
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• v.67 no.4
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• pp.1469-1473
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• 2022

Tungsten diselenide (WSe₂) is one of the promising transition metal dichalcogenides (TMDs) for nanoelectronics and optoelectronics. To enhance and tune the electronic performance of TMDs, chemical functionalization via covalent and van der Waals approaches has been suggested. In the present report, the electric and structural transition of WSe₂ oxidized by exposure to O₃ is investigated using scanning tunneling microscopy. It is demonstrated that the exposure of WSe₂/high-ordered pyrolytic graphite sample to O₃ induces the formation of molecular adsorbates on the surface, which enables to increase in the density of states near the valence band edge, resulting from electric structural modification of domain boundaries via exposure of atomic O. According to the work function extracted by Kelvin probe force microscopy, monolayer WSe₂ with the O₃ exposure results in a gradual increase in work function as the exposure to O₃. Therefore, the present report demonstrates the potential pathway for the chemical functionalization of TMDs to enhance the electric performance of TMDs devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.736-739
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• 2014

In this paper, we propose a enhanced anti-corrosion property of the ground system by coating the CNT/PVDF composite film on it. Polymer material used for preventing the corrosion of ground system is polyvinylidene fluoride (PVDF), and conducting filler for obtaining conductivity of the composite film is multi-walled carbon nanotubes (MWCNTs). The MWCNTs were dispersed in the organic solvent of methyl ethyl ketone 2-butanone (MEK) with different concentration ratios, and the PVDF was solved in the MEK solvent with constant concentration ratio of 1 wt%. The CNT/PVDF composite solution was perpared by mixing and re-dispersing the CNT solution and the PVDF solution. Finally, the CNT/PVDF composite films were fabricated by the spray coating method using the above composite solution. Electrical conductivity, surface states, and anti-corrosion property of the CNT/PVDF composite films coated on the Cu substrate were evaluated. We found that the CNT/PVDF composite film showed relatively low resistance, hydrophobic surface state, and chemical stability. Consequently, we could improve the anti-corrosion property and maintain the electrical conductivity of the ground system by coating the CNT/PVDF composite film on it.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.46 no.5
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• pp.626-637
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• 2013

We measured the grain size, ignition loss (IL), chemical oxygen demand (COD), acid volatile sulfide (AVS) and trace metals (Al, Fe, Cu, Pb, Zn, Cd, Cr, Mn, Hg, and As) of intertidal surface sediment collected from 11 islands (62 stations) in the southern region of Jeollanam Province. The objective of this research was to evaluate the organic matter and trace metals contaminations of sediments from coastal island tidal flats. Surface sediment texture was characterized as follows: mud, sandy silt, muddy sand, and slightly gravelly sand facies. The finer sediments are mainly dominated in the northern part of each island. The concentrations of IL, COD, AVS and some trace metals (Al, Fe, Zn, Cr, Cu, and Hg) were higher in the northwestern part of Wan Island and the area between Gogeum and Sinji Islands, and were associated with relatively finer sediment, as compared to other locations. The concentrations of Mn, Pb, Cd, and As were higher in the northwestern and southeastern parts of Geoguem and Pyungil Islands, but were not correlated with mean grain size. Based on sediment quality guidelines (SQGs), the concentrations of trace metals were lower than the values of effect range low (ERL), used in United States, and threshold effects level (TEL), used in Korea, with exception of As. Similarly, the intertidal sediments were moderately contaminated with As, based on the the enrichment factor (EF) and the geoaccumulation index ($I_{geo}$). The high concentration of As in intertidal sediments from this study region may be due to the input of naturally or artificially contaminated submarine groundwater, contaminated waste from seaweed aquaculture operations and/or land-based seaweed processing facilities. Further studies are needed to identify the sources of As in this study region, and to determine the effects of As contamination on coastal ecosystem.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.335-340
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• 2013

In this study, the plasma etching of the TaN thin film with $CH_4/BCl_3/Ar$ gas chemistries was investigated. The etch rate of the TaN thin film and the etch selectivity of TaN to $SiO_2$ was studied as a function of the process parameters, including the amount of $CH_4$. X-ray photoelectron spectroscopy (XPS) and Field-emission scanning electron microscopy (FE-SEM) was used to investigate the chemical states of the surface of the TaN thin film.

• Journal of the Korean Applied Science and Technology
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• v.29 no.1
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• pp.88-94
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• 2012

In this study, the current-voltage curves for metals were measured using cyclic voltammetry. The relationship between the electrochemical properties and surface states of metals were investigated by Scanning Electron Microscope (SEM). In cyclic voltammetry, we used a 3-electrode system for the electrochemical measurements. The measurement was conducted at the condition that consists of the first reduction from the initial potential to -1350 mV, continuous oxidation to 1650 mV, and last reduction to the initial potential. The scan rates were 50, 100, 150 and 250 mV/s. The results show the C-V characteristics of metals to be for an irreversible process, which was caused by the oxidation current from cyclic voltammogram, when monoethanolamine (MEA) was used as a corrosion inhibitor. When we used MEA as a corrosion inhibitor, the diffusion coefficient was decreased as the concentration of electrolyte was increased. In the SEM images of copper, we observed an increase of surface corrosion at the increased electrolyte concentration. Addition of $1.0{\times}10^{-3}M$ corrosion inhibitor MEA reduced the effect of corrosion prevention due to the relatively large diffusion coefficient at the electrolyte concentration of 0.1N.