• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.16-19
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• 2001

DLC films are deposited using a modified FCVA system. Carbon amorphous networks, chemical bonding states, $sp^3$ fraction, interfaces, and structures are studied as a function of substrate voltage ($0{\sim}-250V$). The $sp^3$ content in the films is evaluated by analyzing the XPS spectra(C1s). The structural properties of the surface, bulk, and interfacial layers in DLC/Si systems are quantitatively analyzed by employing XRR method. As the substrate voltage is increased, the $sp^3$ fraction is decreased by means of XPS and Raman spectroscopy. In addition, the structural properties (interfacial layer, contamination layer, and sp3 fraction) derived from XPS depth profile are relatively correlated with the XRR results.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.360.2-360.2
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• 2016

CuSn thin films were fabricated by rf magnetron co-sputtering method on the Si(100) substrate for evaluation of the antibacterial effect. The co-sputtering process was performed with different rf powers and sputtering times to regulate the thickness of the films and relative atomic ratio of Cu to Sn. The physicochemical properties of the CuSn thin films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), Optical microscope (OM), 4-point probe, and antibacterial test. An antibacterial test was conducted with Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) as changing contact times between CuSn fillms and bacteria suspension. We compared to the crystalline structures of films before sterilization and after sterilization by XRD measurement. The changes of oxidation states of Cu and Sn and the chemical environment of films before and after antibacterial test were investigated with high resolution XPS spectra in the regions of Cu 2p, Cu LMM, and Sn 3d. After antibacterial test, the morphology of the films was checked with an OM images. The electrical properties of the CuSn films such as surface resistance and conductivity were measured by using 4-point probe.

• 한국전기화학회:학술대회논문집
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• 한국전기화학회 2002년도 연료전지심포지움 2002논문집
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• pp.211-218
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• 2002

In this study, Pt/Pd (1.1), PtPd (2:1) and PtPd (3:1) binary catalysts and Pt/Ru/Pd (5:4:1) ternary catalyst were designed. The catalysts were synthesized by impregnation method using $NaBH_4$ as a reducing agent. A good catalyst for methanol oxidation requires low on-set potential, stable durability and low activation energy. In order to investigate the catalytic activity for the methanol oxidation, electrochemical measurements such as cyclic voltammetry and chronoamperometry were peformed in sulfuric acid with/without methanol solution. In order to calculate the activation energy of the reaction, electrochemical measurements were also tested at different temperatures. For investigation of the structural analysis such as particle size and alloying, X-ray diffraction and transmission electron microscopy analysis were used. In order to identify the role of the Pd and to determine the composition of the surface of the Pt/Pd nanoparticles, X-ray photoelectron spectroscopy (XPS) analysis was investigated. The XPS spectra of Pd showed that Pd appears only as a metallic state in the binary catalysts. The chemical states of Pt in PtPd catalysts are both metallic and oxidative. Polarization curves and power density data were obtained by testing the DMFC unit cell performance of PtPd and PtRuPd catalysts. These data showed that Pt/Pd (2:1) and Pt/Ru/Pd (5:4:1) have better performance than Pt and Pt/Ru, respectively.

• 한국전기전자재료학회논문지
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• 제22권12호
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• pp.1005-1008
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• 2009

In this study, adaptively coupled plasma (ACP) source was used for dry etching of $Al_2O_3$ thin film. During the etching process, the wafer surface temperature is an important parameter to influent the etching characteristics. Therefore, the experiments were carried out in ACP to measuring the etch rate, the selectivities of $Al_2O_3$ thin film to mask materials and the etch profile as functions of $Cl_2$/Ar gas ratio and substrate temperature. The highest etch rate of $Al_2O_3$ was 65.4 nm/min at 75% of $Cl_2/(Cl_2+Ar)$ gas mixing ratio. The etched profile was characterized using field effect scanning electron microscopy (FE-SEM). The chemical states of $Al_2O_3$ thin film surfaces were investigated with x-ray photoelectron spectroscopy (XPS).

• 유체기계공업학회:학술대회논문집
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• 유체기계공업학회 2006년 제4회 한국유체공학학술대회 논문집
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• pp.471-474
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• 2006

The Mixer is apparatus that help precipitation or an inhomogeneous distribution of various phases to be mixed and that user makes necessary material mixing one or the other. Mainly the mixer which is used from chemical and food industry is very important system in engineering that mixes the material. The inside flow of the mixer under the actual states which put a basis in flow of the fluid is formed rotation of the impeller. The inside flow of impeller will be caused by various reasons change with shape of impeller, number of rotation, mixing material and flow pattern of free surface etc. Also mixer study depended in single-phase flow and experimental research. So the numerical analysis of flow mixing solid-fluid particle is simulated. It is become known, that the case where agitator inside working fluid includes the solid particle the sinkage reverse which the solid particle has decreases an agitation efficiency. From the research which it sees the hazard solid which examines the effect where the change of the sinkage territory which it follows agitation number of revolution and diameter of the particle goes mad to an agitator inside flow distribution - numerical analysis the inside flow distribution of liquid state with Eulerian Two-Phase Method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.209-212
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• 2001

Polyimide(PI) films have been considered as the interlayer dielectric materials due to low dielectric constant, low water absorption, high gap-fill and planarization capability. The PI mm Was etched with using inductively coupled plasma (ICP). The etching characteristics such as etch rate and selectivity were evaluated to gas mixing ratio. High etch rate was $8300{\AA}/min$ and vertical profile was approximately acquired $90^{\circ}$ at $CF_{4}/(CF_{4}+O_{2})$ of 0.2. The selectivies of polyimide to PR and $SiO_{2}$ were 1.2, 5.9, respectively. The etching profiles of PI films with an aluminum pattern were measured by a scanning electron microscope (SEM). The chemical states on the PI film surface were investigated by x-ray photoelectron spectroscopy (XPS). Radical densities of oxygen and fluorine in different gas mixing ratio of $O_{2}/CF_{4}$ were investigated by optical emission spectrometer (OES).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.99-102
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• 2003

Tin dioxide thin films were deposited at $375^{\circ}C$ on alumina substrate by metal-organic chemical vapor deposition process to find the relationship between physicochemical properties and the annealing treatments. The small grains with heat treatments grew to the bunch of grains and then showed the hillocks on the film surface. The thickness decreased with annealing treatment. The measured binding energy (BE) and branching ratio of the Sn 3d spin-orbital doublet were typical of oxidized states of Sn and the BE of the O1s core level of about 530~530.65eV also confirmed the presence of O-Sn bonds. The BE of oxygen and tin with annealing treatment shifted to higher position. O/Sn atomic ratios of films deposited at $375^{\circ}C$ for 2min and 4min were 1.99 and 2.01, respectively. The value of the atomic ratio O/Sn of films deposited at $375^{\circ}C$ for 2min changed from 1.99 to 2.45 with annealing treatment. Gas sensitivity depended on annealing temperature, the sensitivity increased with increasing annealing temperature.

• 한국진공학회지
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• 제6권1호
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• pp.9-19
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• 1997

본 연구에서는 실리콘 웨이퍼 표면에 존재하는 미량의 Zn, Fe, Ti 금속 오염물들이 UV-excited chlorine radical을 이용한 건식세정 방법으로 제거되는 반응과정을 찾아내고자 하였다. 실리콘 웨이퍼 상에 진공증착법으로 원형패턴이 있는 Zn, Fe, Ti 박막을 증착시켜 상온 및 $200^{\circ}C$에서 UV/$Cl_2$세정하였을 때, 염소 래디컬($Cl^*$)이 Fe, Zn, Ti와 반응하여 제거되 는 것을 반응 전후 광학현미경과 SEM을 통해 표면 형상 변화를 관찰하였고, in-line으로 연결된 XPS를 통해서 반응 후 웨이퍼 표면에 남아있는 화합물의 화학적 결합상태를 관찰 하였으며, UV/$Cl_2$ 세정 후 실리콘 기판이 손상받는 정도를 알기 위해 AFM으로 표면 거칠 기를 측정하였다. 광학현미경과 SEM의 분석 결과에 의하면 Zn와 Fe는 쉽게 제거되는 반면 염화물을 형성하기 보다는 휘발성이 적은 산화물을 형성하는 경향이 강한 Ti은 약간만 제 거되는 것을 확인하였다. XPS분석을을 통해서 이들 금속 오염물들이 chlorine radical과 반 응하여 웨이퍼 표면에 금속 염화물을 형성하고 있는 것을 확인하였고, UV/$Cl_2$세정처리를 하였을 때 실리콘 웨이퍼의 표면 거칠기가 약간 증가하는 것을 알 수 있었다. 지금까지의 결 과를 볼 때, 습식세정과 UV/$Cl_2$건식세정을 병행하면 플라즈마 및 레이저를 사용하는 다른 건식세정 방법에 비하여 보다 저온에서 실리콘 기판의 큰 손상 없이 비교적 용이하게 금속 오염물을 제거할 수 있음을 제안 하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.7-8
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• 2010

The surface conductive layer (SCL) of chemical vapor deposition (CVD) diamonds has attracting much interest. However, neither photoemission electron microscopic (PEEM) nor micro-spectroscopic (PEEMS) information is available so far. Since SCL retains in an ultra-high vacuum (UHV) condition, PEEM or PEEMS study will give an insight of SCL, which is the subject of the present study. The sample was made on a Ib-type HTHP diamond (001) substrate by non-doping CVD growthin a DC-plasma deposition chamber. The SCL properties of the sample in air were; a few tens K/Sq. in sheet resistance, ${\sim}180\;cm^2/vs$ in Hall mobility, ${\sim}2{\times}10^{12}/cm^2$ in carrier concentration. The root-square-mean surface roughness (Rq) of the sample was ~0.2nm as checked by AFM. A $2{\times}1$ LEED pattern and a sheet resistance of several hundreds K/Sq. in UHV were checked in a UHV chamber with an in-situ resist-meter [1]. The sample was then installed in a commercial PEEM/S apparatus (Omicron FOCUS IS-PEEM) which was composed of electro-static-lens optics together with an electron energy-analyzer. The presence of SCL was regularly monitored by measuring resistance between two electrodes (colloidal graphite) pasted on the two ends of sample surface. Figure 1 shows two PEEM images of a same area of the sample; a) is excited with a Hg-lamp and b) with a Xe-lamp. The maximum photon energy of the Hg-lamp is ~4.9 eV which is smaller that the band gap energy ($E_G=5.5\;eV$) of diamond and the maximum photon energy of the Xe-lamp is ~6.2 eV which is larger than $E_G$. The image that appear with the Hg-lamp can be due to photo-excitation to unoccupied states of the hydrogen-terminated negative electron affinity (NEA) diamond surface [2]. Secondary electron energy distribution of the white background of Figs.1a) and b) indeed shows that the whole surface is NEA except a large black dot on the upper center. However, Figs.1a) and 1b) show several features that are qualitatively different from each other. Some of the differences are the followings: the two main dark lines A and B in Fig.1b) are not at all obvious and the white lines B and C in Fig.1b) appear to be dark lines in Fig.1a). A PEEMS analysis of secondary electron energy distribution showed that all of the features A-D have negative electron affinity with marginal differences among them. These differences can be attributed to differences in the details of energy band bending underneath the surface present in SCL [3].

• 태양에너지
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• 제17권2호
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• pp.55-66
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• 1997

CdTe/CdS 태양전지 제작에 필요한 다결정 CdS 박막을 ITO 전도 유리기판위에 SSD법, SPD법 및 CBD법 으로 제작하고 열처리 한 후 그 결정구조와 광학적 특성을 조사하였다. 박막은 모두 Wurtzite 구조를 보였고 SSD법과 CBD법의 박막은 $0.5{\mu}m$ 크기의 CdS 입자가 불규칙적으로 형성되어 증착되어 있음을 보였고, $400^{\circ}C$로 진공중에서 열처리 할 때 입자의 크기가 약간 증가하였다. SPD법의 박막은 (002)방향으로 결정이 성장되고 입자의 크기가 $0.1-0.3{\mu}m$ 이었다. 에너지 밴드갭 및 결함 상태를 광학적 흡수, 광 루미니센스, 라만 및 광 열 편기 스펙트럼(PDS) 측정을 통해 조사하였다.