• Electrical & Electronic Materials
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• v.7 no.4
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• pp.289-293
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• 1994

Thin films of YB $a_{2}$C $u_{3}$$O_{7-x}$ supercondYB $a_{2}$C $u_{3}$$O_{7-x}$uctor were prepared on (100) SrTi $O_{3}$ substrates by pulsed laser deposition using visible light laser. Q-switched Nd:YAG(532 nm, 30 ns) pulsed laser was used for deposition. The effects of substrate temperature and oxygen pressure during deposition on films were studied. Critical current density of 2.93*10$^{6}$ A/c $m^{2}$ at 77K and Tc(zero)=91.7K were obtained from the film prepared with Tsub=745.deg. C and $P_{02}$=200 mTorr. XRD analysis showed that the grown film has c-axis normal orientation to the substrate surface and has single phase. Surface morphology of the film has been improved by interfering the plume ejected from YB $a_{2}$C $u_{3}$$O_{7-x}$ target.arget.t.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.613-616
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• 2001

Bi$_2$Sr$_2$CuO$_{x}$ thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering(IBS) method. During the deposition, 10 and 90 wt%-ozone/oxygen mixture gas of typical pressure of 1~9$\times$10$^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.n.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 1999.02a
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• pp.26-29
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• 1999

Superconducting $YBa_{2}$$Cu_{3}$ $O_{7-x}$(YBCO) thin films were deposited on MgO(100) substrates using a hollow cathode discharge sputtering system. Influence of the sputtering conditions such as substrate temperature and discharge sputtering gas pressure on electrical and structural properties were investigated. It was found that YBCO thin films with zero resistance temperature higher than 85 K were obtained to the pressure 200 mToorr(Ar/O2=0.9), substrate temperature of $760^{\circ}C$, and target-substrate distance of 10 mm during film deposition. Homogeneous large area YBCO films with 2 inch diameter were also sucessfully fabricated by this method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.490-493
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• 2002

Phase intergrowth some kinds of the Bi$_2$Sr$_2$Ca$\_$n-1/Cu$\_$n/O$\_$y/ phases is observed in the thin film fabrication at ultralow co-deposition with multi targets by means of ion beam sputtering. The molar fraction of the Bi2212 phase in the mixed crystal of the grown films is investigated as a function of the applied ozone pressure and the substrate temperature. The activation energy for the phase transformation from the Bi2201 to the Bi2212 is estimated in terms of the Avrami equation. This study reveals that the formation of a liquid phase contributes significantly to the construction of the Bi2212 phase in the thin films, differing from the bulk synthesis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.782-787
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• 2004

Superconducting flux flow transistor (SFFT) is based on a control of the Abrikosov vortex flowing along a channel. The induced voltage by moving of the Abrikosov vortex in an SFFT is greatly affected by the thickness, the width, and the length of channel. In order to fabricate a reproducible channel in the SFFT, we studied the variation of the critical characteristics of ${YBa}_2{Cu}_3{O}_7-\delta(YBCO)$ thin films with the etching time using ICP (Inductively coupled plasma) system. From the simulation, it was certified that the vortex velocity was increased in a low pinning energy at channel width 0,5 mm. The surfaces of YBCO thin film were etched by ICP etching system. We observed the etched channel surfaces by AFM (Atomic Force Microscope) and measured the critical current density with etching time. As a measured results, the etching thickness of channel should be optimized to fabricated a flux flow transistor with specified characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.9
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• pp.812-815
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• 2007

To apply the superconducting fault current limiter(SFCL) into a power system, the analysis for its recovery characteristics as well as the consideration for its cooperation with other protecting machine such as a circuit breaker is required. The recovery characteristics of the flux-lock type SFCL like its current limiting characteristics are dependent on the winding direction of two coils. In this paper, the experiments of the current limiting and the recovery characteristics of the flux-lock type SFCL with YBCO thin film were performed. From the analysis on the experimental results due to the winding direction of two coils, the limited fault current in case of the additive polarity winding was observed to be lower than that for the case of the subtractive polarity winding. In addition, the recovery time was found to be faster in case of the additive polarity winding compared to the subtractive polarity winding.

• Proceedings of the KIEE Conference
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• 2005.11b
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• pp.368-370
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• 2005

Superconducting fault current limiter (SFCL) provides the effect such as enhancement in power system reliability due to limiting fault current in a few miliseconds. The flux-lock type SFCL among various type SFCLs consists of two coils wound on the same iron core and a component using the YBCO thin film. In the SFCL, operation characteristics can be controlled by adjusting the inductances and the winding directions of the coils. In this paper, we investigated the various fault current limiting characteristics according to the voltage level. To analyze the current limiting performance, we compared operational characteristics on the subtractive polarity winding direction on in case of open-loop iron core.

• Progress in Superconductivity and Cryogenics
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• v.7 no.4
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• pp.20-23
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• 2005

The Resistive Type High Temperature Superconducting Fault Current Limiter (SFCL) has been developed in many countries. Until now, materials of the resistive SFCL were Bi2212 bulk and YBCO thin film. Although YBCO coated conductor (CC) has many advantages such as high n-value and critical current for applying resistive SFCL, the resistive SFCL using CC doesn't have developed yet. The bifilar winding type SFCL was manufactured and tested rated on 30V/80A. In normal state, the SFCL using pancake type bifilar winding had very low impedance. When a fault occurred, the SFCL limited the fault current efficiently. Through these results of experiment, large-scale SFCL using CC should be developed in the future.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.889-894
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• 2007

We investigated the quench velocity of superconducting fault current limiter (SFCL) dependent on the source voltage. $YBa_2Cu_3O_7$ (YBCO) thin film was used as the current limiting element for SFCL. The analysis on the quench velocity of SFCL is essential to determine the capacity of circuit breaker (CB) or coordinate with CB. Generally, the quench velocity of SFCL is related with the short-circuit current. To change the short-circuit current, in this paper, the amplitude of the power source voltage is adjusted. Through the fault current limiting experiments, the quench velocity of SFCL was confirmed to increase fast as the source voltage increased. On the other hand, the peak limited current was shown to increase with steady rate of increase.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2000.02a
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• pp.139-142
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• 2000

We fabricated resistive superconducting fault current limiters based on $YBa_{2}Cu_{3}O_{7}$ thin films and investigated position dependence of quench progress. The $YBa_{2}Cu_{3}O_{7}$ film was coated insitu with a gold layer and patterned into 1 mm wide meander lines by photolithography. The limiters were tested with simulated fault currents. Quench progress depended significantly on the position in the limiter with respect to electrodes. The limiters quenched fastest at the part farthest from the electrodes. the limiters quenched fastest at the part farthest from the electrodes and slowest next to the electrodes. This phenomenon was more prominent near the minimum quench current. At high fault current the quench started simultaneously on all parts of the limiters and the subsequent progress of quench depended only weakly on the position. The heat transfer from limiter meander lines to electrodes explains these results.