• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.395-395
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• 2012

We fabricate organic-inorganic hybrid thin film for the purpose of encapsulation by molecular layer deposition (MLD) using Trimethylaluminium (TMA) and Adipoyl Chloride (AC). Ellipsometry was employed to verify self limiting reaction of ALD. Linear relationship between number of cycle and thickness was obtained. We found that desirable organic thin film fabrication is possible by MLD surface reaction in nanoscale. Purging was carried out after dosing of each precursor to form monolayer in each sequence. We also confirmed roughness of the organic thin film by atomic force microscopy. We deposit TMA and AC at $70^{\circ}C$ and that 1.78A root mean square was obtained which indicates that uniform organic thin film was formed. We confirmed precursor's functional group by IR spectrum. We calculated WVTR of organic-inorganic hybrid super-lattice epitaxial layer using Ca test. WVTR indicates superlattice film can be possibly use as encapsulation in flexible devices.

• 한국재료학회지
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• 제20권11호
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• pp.606-610
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• 2010

Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of silicon rich silicon nitride and $Si_3N_4$ layers using an rf magnetron co-sputtering system. In order to use the silicon quantum dot super lattice structure for third generation multi junction solar cell applications, it is important to control the dot size. Moreover, silicon quantum dots have to be in a regularly spaced array in the dielectric matrix material for in order to allow for effective carrier transport. In this study, therefore, we fabricated silicon quantum dot superlattice films under various conditions and investigated crystallization behavior of the silicon quantum dot super lattice structure. Fourier transform infrared spectroscopy (FTIR) spectra showed an increased intensity of the $840\;cm^{-1}$ peak with increasing annealing temperature due to the increase in the number of Si-N bonds. A more conspicuous characteristic of this process is the increased intensity of the $1100\;cm^{-1}$ peak. This peak was attributed to annealing induced reordering in the films that led to increased Si-$N_4$ bonding. X-ray photoelectron spectroscopy (XPS) analysis showed that peak position was shifted to higher bonding energy as silicon 2p bonding energy changed. This transition is related to the formation of silicon quantum dots. Transmission electron microscopy (TEM) and electron spin resonance (ESR) analysis also confirmed the formation of silicon quantum dots. This study revealed that post annealing at $1100^{\circ}C$ for at least one hour is necessary to precipitate the silicon quantum dots in the $SiN_x$ matrix.

• 한국재료학회지
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• 제20권11호
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• pp.586-591
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• 2010

Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the $1^{st}$ and $2^{nd}$ generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an $SiO_x$ matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; $SiO_x$ (x = 0.8, 1.12)) and $SiO_2$ layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and $1,100^{\circ}C$ under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at $1,100^{\circ}C$ for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/$SiO_2$ SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at $1,100^{\circ}C$ for two hours. The systematic investigation of precipitation behavior of Si QDs in $SiO_2$ matrices is presented.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.438-438
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• 2011

White light-emitting diodes (LEDs), the so-called next-generation solid-state lighting, offer benefits in terms of reliability, energy-saving, maintenance, safety, lead-free, and eco-friendly. Recently, rare-earth-doped oxynitride or nitride compounds have attracted a great deal of interest as a photoluminescent material because of their unique luminescent property, especially for white LEDs applications. Ce doped ${\beta}$-SiAlON has been studied as a wavelength conversion phosphor in white LEDs thanks to its high absorption rates, high quantum efficiency, and excellent thermal stability. Previously researches were not enough to understand the detail mechanism and characteristics of ${\beta}$-SiALON. The bandgap structures and electronic structures were not exact due to limitation of calculation methods. In this study, to elucidate the Ce doping effect on the SiAlON system, accurate band structures and electronic structure of the Ce doped ${\beta}$-SiAlON was intensively investigated using density functional theory calculations. In order to get a better description of the band gaps, MBJLDA method were used. We have found a single Ce atom site in ${\beta}$-SiAlON super cell. Furthermore, the density of state, band structure and lattice constant were intensively investigated.

• Bulletin of the Korean Chemical Society
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• 제31권6호
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• pp.1665-1668
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• 2010

The spin exchange interactions of $(VO)_2(H_2O){O_3P-(CH_2)_3-PO_3}{\cdot}2H_2O$ were examined by spin dimer analysis based on extended Huckel tight binding method. The strongest spin exchange interaction occurs through the super-superexchange path $J_2$ and the second strongest spin exchange interaction occurs through the superexchange interaction path $J_1$. There are two strongly interacting spin exchange paths in $(VO)_2(H_2O){O_3P-(CH_2)_3-PO_3}{\cdot}2H_2O$. Therefore, magnetic susceptibility curve of $(VO)_2(H_2O){O_3P-(CH_2)_3-PO_3}{\cdot}2H_2O$ can be well reproduced by an alternating onedimensional antiferromagnetic chain model rather than an isolated spin dimer model.

• 한국전기전자재료학회논문지
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• 제17권4호
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• pp.384-389
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• 2004

Crystal structure and microwave dielectric properties of Ba(Mg1/3Nb2/3) $O_3$ (BMN) ceramics were investigated. Ba(Mg1/3Nb2/3) $O_3$ has the 1:2 ordered hexagonal structure. The 1:2 ordering and relative density of specimens increased with small Mg deficiency(x). The variation of Q${\times}$ $f_{0}$ with Mg deficiency is very similar to that of 1:2 ordering and relative density. The highest Q${\times}$ $f_{0}$ achieved in this investigation is about 96,000 for Ba(Mg1/3Nb2/3) $O_3$. The improvement of Q${\times}$ $f_{0}$ with Mg-deficiency is related to the increase of degree of ordering and relative density of the specimen.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.283-287
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• 2003

Crystal structure of $(Ba_{1-x}La_x)[Mg_{(1+x)/3}Nb_{(2-x)/3}]O_3$ (BLMN) ceramics with $0{\leq}x{\leq}1$ was investigated using synchrotron X-ray powder diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). When La content, x, is above 0.1, the 1:2 ordered hexagonal structure found in $Ba(Mg_{1/3}Nb_{2/3})O_3$ (BMN) was transformed into 1:1 ordered cubic structure. The 1:1 ordered cubic structure was maintained up to x=0.7. However, when x exceeded 0.7, BLMN was transformed 1:1 ordered structure which has cation displacement and in-phase and anti-phase tilt of octahedra.

• 한국전기전자재료학회논문지
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• 제17권7호
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• pp.718-723
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• 2004

Crystal structure of $(Ba-{1-x}La_x)[Mg_\frac{1+x}{3}}Nb_\frac{{2-x}{3}}]O_3$ (BLMN) ceramics with 0\leq1x \geq was investigated using synchrotron X-ray powder diffraction (XRD) and high reso(B $a_{l-x}$L $a_{x}$)[M $g_{(1+x)}$3/N $b_{(2-x)/3}$］ $O_3$lution transmission electron microscopy (HRTEM). When the La content, x, is above 0.1, the 1:2 ordered hexagonal structure found in Ba($Mg_\frac{1}{3}Nb_\frac{2}{3}})O_3$(BMN) was transformed into 1:1 ordered cubic structure. The 1:1 ordered cubic structure was maintained up to x=0.7. When x exceeded 0.7, however, BLMN was transformed into 1:1 ordered structure which has cation displacement and in-phase and anti-phase tilt of octahedra.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.46-50
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• 2003

Crystal structure and microwave dielectric properties of $Ba(Mg_{1/3-x}Nb_{2/3})O_3$ (BMN) ceramics were investigated. $Ba(Mg_{1/3}Nb_{2/3})O_3$ has the 1:2 ordered hexagonal structure. The 1:2 ordering and relative density of specimens increased with small Mg deficiency(x). The variation of Q-value with Mg deficiency is very similar to that of 1:2 ordering and relative density. The highest $Q{\times}f_0$ achieved in this investigation is about 96,000 for $Ba(Mg_{1/3-0.02}Nb_{2/3})O_3$. The improvement of Q-value with Mg-deficiency is related to the increase of degree of ordering and relative density of the specimen.

• 센서학회지
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• 제31권1호
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• pp.31-35
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• 2022

The efficacy improvement of the light emitting diode (LED) was studied for the realization of small-size, low power consumption, and highly sensitive bio-sensor instrument. The performance of the LED with Mg delta-doping at the interface of AlGaN/GaN super-lattice in p type cladding layer was simulated. The device with Mg delta-doping showed improved current, radiative recombination rate, electroluminescence, and light output power compared to the conventional LED structure. Under the bias condition of 5 V, the improved device exhibited 20.8% increase in the light output power. This is attributed to the increment of hole concentration from stable ionization of Mg in p type cladding layer. This result is expected to be used for the miniaturization, power saving, and sensitivity improvement of the bio-sensor system.