• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2013년도 춘계학술대회 논문집
• /
• pp.214-214
• /
• 2013

Diamond like carbon(DLC) 박막은 고경도, 저마찰, 내스크래치 특성을 요구하는 표면기술 응용분야에 널리 사용되며, 대면적 저가 코팅 방법 개발 및 물성 조절 기술이 요구된다. 본 연구에서는 Filtered Vacuum Arc (FVA)를 통해 증착되는 Hydrogen-free DLC 박막의 밀착력 제어를 위한 증착시 기판 전압에 따른 증착 및 밀착력 특성을 분석하였다. 기판전압이 0~-150 V 까지 변화함에 따른 스크래치 테스트 결과를 통해 최적 증착 조건을 도출하였다.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2007년도 춘계학술대회A
• /
• pp.210-214
• /
• 2007

Silicon nanoparticles are widely studied as a material with great potential for wide applications. For application to present industry, it should be easy to control the characteristics of nanoparticle including the size and structure. In this paper, we investigated the formation of Si nanoparticle using pulse plasma technology. Plasma technology is already quite common in device industry and the size of nanoparticle can be easily controlled according to plasma pulse duration. An inductively-coupled plasma chamber with RF power (13.56 MHz) was used with DC-biased grid $(-200\sim+200\;V)$ installed above the substrate. In order to measure the shape and size of nanoparticle, TEM was used. It was found that the size of nanoparticles can be controlled well with the plasma pulse duration and the collection efficiency is increased with the use of either negative or positive DC-bias.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2009년도 정보 및 제어 심포지움 논문집
• /
• pp.159-162
• /
• 2009

The necessity of radiation dosimeter with precise measurement of radiation dose is increased and required in the field of spacecraft, radiotheraphy hospital, atomic plant facility, etc. where radiation exists. Until now, a low power commercial metal-oxide semiconductor(MOS) transistor has been tested as a gamma radiation dosimeter. The measurement error between the actual value and the measurement one can occur since the MOSFET(MOS field-effect transistor) dosimeter, which is now being used, has two gates with same width. The measurement value of dosimeter depends on the variation of threshold voltage, which can be affected by the environment such as temperature. In this paper, a radiation dosimeter having a pair of MOSFET is designed in the same silicon substrate, in which each of the MOSFETs is operable in a bias mode and a test mode. It can measure the radiation dose by the difference between the threshold voltages regardless of the variation of temperature.

• Corrosion Science and Technology
• /
• 제3권4호
• /
• pp.148-153
• /
• 2004

Magnesium thin flims were prepared on cold-rolled steel substrates by RF magnetron sputtering technique. The influence of argon gas pressure and substrate bias voltage on their crystal orientation and morphology of the coated films were investigated by scanning electron microscopy (SEM) and X-ray diffraction, respectively. And the effect of crystal orientation and morphology of magnesium films on corrosion behaviors was estimated by measuring anodic polarization curves in deaerated 3%NaCl solution. From the experimental results, all the sputtered magnesium films showed obviously good corrosion resistance to compare with 99.99% magnesium target of the sputter-evaporation metal. Finally it was shown that the Corrosion-resistance of magnesium films can be improved greatly by controlling the crystal orientation and morphology with effective use of the plasma sputtering technique.

• 한국표면공학회지
• /
• 제25권3호
• /
• pp.133-143
• /
• 1992

Titanium nitride(TiN) films have been prepared by HCD plasma enhanced reactive ion plating. Density and temperature of the plasma generated by the HCD were investigated. It was shown that parameters such as the substrate bias voltage(0 350V) and N2 flow rate(10 180SCCM) influenced the growth, the growth, the microstructure and the color tone of the film mostly. In order to study the interface region, surface analysis by AES combined with sputter depth profiling was performed. Microhardness of the coated TiN films were measured by micro Vickers hardness tester. Also, the effect of coating parameters on composition, coating surface and fracture morphology, grain size and growth rate were examined.

• 한국재료학회지
• /
• 제33권11호
• /
• pp.497-501
• /
• 2023

ZnO/Cu/ZnO (ZCZ) thin films were deposited at room temperature on a glass substrate using direct current (DC) and radio frequency (RF, 13.56 MHz) magnetron sputtering and then the effect of post-deposition electron irradiation on the structural, optical, electrical and transparent heater properties of the films were considered. ZCZ films that were electron beam irradiated at 500 eV showed an increase in the grain sizes of their ZnO(102) and (201) planes to 15.17 nm and 11.51 nm, respectively, from grain sizes of 13.50 nm and 10.60 nm observed in the as deposited films. In addition, the film's optical and electrical properties also depended on the electron irradiation energies. The highest opto-electrical performance was observed in films electron irradiated at 500 eV. In a heat radiation test, when a bias voltage of 18 V was applied to the film that had been electron irradiated at 500 eV, its steady state temperature was about 90.5 ℃. In a repetition test, it reached the steady state temperature within 60 s at all bias voltages.

• 대한전자공학회논문지SD
• /
• 제39권10호
• /
• pp.25-34
• /
• 2002

본 논문에서는 코발트 실리사이드가 형성된 얕은 p+-n과 n+-p 접합의 전류-전압 특성을 분석하여 silicidation에 의해 형성된 Schottky contact 면적을 구하였다. 역방향 바이어스 영역에서는 Poole-Frenkel barrier lowering 효과가 지배적으로 나타나서 Schottky contact 효과를 파악하기가 어려웠다. 그러나 Schottky contact의 형성은 순방향 바이어스 영역에서 n+-p 접합의 전류-전압 (I-V) 동작에 영향을 미치는 것으로 확인되었다. 실리사이드가 형성된 n+-p 다이오드의 누설전류 증가는 실리사이드가 형성될 때 p-substrate또는 depletion area로 코발트가 침투퇴어 Schottky contact을 형성하거나 trap들을 발생시켰기 때문이다. 분석결과 perimeter intensive diode인 경우에는 silicide가 junction area까지 침투하였으며, area intensive junction인 경우에는 silicide가 비록 공핍층이나 p-substrate까지 침투하지는 않았더라도 공핍층 근처까지 침투하여 trap들을 발생시켜 누설전류를 증가시킴을 확인하였다. 반면 p+-n 다이오드의 경우 Schottky contact이발생하지 않았고 따라서 누설전류도 증가하지 않았다. n+-p 다이오드에서 실리사이드에 의해 형성된 Schottky contact 면적은 순방향 바이어스와 역방향 바이어스의 전류 전압특성을 동시에 제시하여 유도할 수 있었고 전체 접합면적의 0.01%보다 작게 분석되었다.

• 전자공학회논문지T
• /
• 제36T권1호
• /
• pp.8-12
• /
• 1999

산소이온 펌핑효과를 나타내는 8% 이트리아가 함유된 ZrO\sub 2\ 이온 전도체를 기판으로 하여 그 위에 NO\sub x\가스에 대해 감지효과를 갖고 있는 것으로 알려져 있는 WO\sub 3\산화물 반도체를 사용하여 박막시편을 제작하였다. 각 소자의 NO\sub x\ 가스에 대한 전기적 특성과 열처리 온도에 따른 미세구조의 변화를 조사하였고, 특히 8YSZ 기판에 가해준 전압에 의한 NO\sub x\ 가스 감지의 증대효과를 조사하였다. 열처리 온도에 따른 WO\sub 3\ 박막표면의 SEM사진의 분석에서 열처리하지 않은 WO\sub 3\ 박막은 비결정질 상태이지만 600℃이상의 열처리 온도에서 결정화가 이루어졌고 사방경계상의 WO\sub 3\ 피크가 나타났으며 온도가 증가함에 따라 (111)면과 (001)면이 특히 많이 성장하였다. 측정온도 400℃에서 8YSZ 기판에 전압을 가하지 않았을 때보다 전압을 가하였을 경우가 더 안정되고 더 큰 응답을 보였으며, 특히 2V 일 때가 가장 높은 감도를 나타내었다. 그리고 NO\sub 2\ 가스보다 NO 가스에 대한 회복특성이 훨씬 우수했다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
• /
• pp.740-742
• /
• 1998

In this paper, we described the effect of rapid thermal annealing on the electrical properties of interfacial layer between various top electrodes and $(Ba_{0.5}Sr_{0.5})TiO_3$ thin films. BST thin films were fabricated on Pt/TiN/$SiO_2$/Si substrate by RF magnetron sputtering technique. AI, Ag, and Cu films for the formation of top electrode were deposited on BST thin films by thermal evaporator. Top electrodes/BST/Pt capacitor annealed with rapid thermal annealing at various temperature. In $(Ba_{0.5}Sr_{0.5})TiO_3$ thin films with Cu top electrode annealed at $500^{\circ}C$, the dielectric constant was measured to the value of 366 at 1.2 [kHz] and the leakage current was obtained to the value of $5.85{\times}10^{-7}\;[A/cm^2}$ at the forward bias of 2 [V].

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.363-363
• /
• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.