• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.482-483
• /
• 2011

Graphene is a good candidate for the future nano-electronic materials because it has excellent conductivity, mobility, transparency, flexibility and others. Until now, most graphene researches are focused on the nano electronic device applications, however, biological application of graphene has been relatively less reported. We have fabricated a deoxyribonucleic acid (DNA) conjugated graphene field-effect transistor (FET) and measured the electrical transport characteristics. We have used graphene sheets grown on Ni substrates by chemical vapour deposition. The Raman spectra of graphene sheets indicate high quality and only a few number of layers. The synthesized graphene is transferred on top of the substrate with pre-patterned electrodes by the floating-and-scooping method [1]. Then we applied adhesive tapes on the surface of the graphene to define graphene flakes of a few micron sizes near the electrodes. The current-voltage characteristic of the graphene layer before stripping shows linear zero gate bias conductance and no gate operation. After stripping, the zero gate bias conductance of the device is reduced and clear gate operation is observed. The change of FET characteristics before and after stripping is due to the formation of a micron size graphene flake. After combined with 30 base pairs single-stranded poly(dT) DNA molecules, the conductance and gate operation of the graphene flake FETs become slightly smaller than that of the pristine ones. It is considered that DNA is to be stably binding to the graphene layer due to the ${\pi}-{\pi}$ stacking interaction between nucleic bases and the surface of graphene. And this binding can modulate the electrical transport properties of graphene FETs. We also calculate the field-effect mobility of pristine and DNA conjugated graphene FET devices.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2005년도 제17회 워크샵 및 추계학술대회
• /
• pp.561-566
• /
• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.

• 열처리공학회지
• /
• 제23권1호
• /
• pp.23-28
• /
• 2010

The cylindrical magnetron sputtering has not been widely used, although this system is useful for only certain types of applications such as fiber coatings. This paper presents electrode configurations which improved the complicacy of the target assembly by using the positive voltage power supply. It is a modified type which has a target constructed with a large cylindrical part, a conical part and a small cylindrical part. When positive voltage was applied to an anode, a stable glow discharge was established and a high deposition rate was obtained. The substrate bias current was monitored to estimate the effect of ion bombardment. As a result, it was found that the substrate current was large. With cylindrical and conical cathode magnetron sputter deposition on the surface of the substrate to prevent re-sputtering, ion impact because it can increase the effectiveness with excellent ductility and adhesion of Ti film deposition can be obtained. We board at the front end of the ground resistance of $5\;k{\Omega}$ attached to the substrate potential can be controlled easily, and Ti film deposition with excellent adhesion can be obtained. Microstructure and morphology of Ti films deposited on pure Cu wires were investigated by scanning electron microscopy in relation to preparation conditions. High level ion bombardment was found to be effective in obtaining a good adhesion for Cu wire coatings.

• 한국표면공학회지
• /
• 제42권6호
• /
• pp.256-259
• /
• 2009

The wafer surface temperature is an important parameter in the etching process which influences the reaction probabilities of incident species, the vapor pressure of etch products, and the re-deposition of reaction products on feature surfaces. In this study, we investigated all of the effects of substrate temperature on the etch rate of $ZrO_2$ thin film and selectivity of $ZrO_2$ thin film over $SiO_2$ thin film in inductively coupled plasma as functions of $Cl_2$ addition in $BCl_3$/Ar plasma, RF power and dc-bias voltage based on the substrate temperature in range of $10^{\circ}C$ to $80^{\circ}C$. The elements on the surface were analyzed by x-ray photoelectron spectroscopy (XPS).

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.149-150
• /
• 2006

A ZnO nanowire-based FET is fabricated m this study on a flexible substrate of PES. For the flat and bent flexible substrates, the current ($I_D$) versus drain-source bias voltage ($V_{DS}$) and $I_D$ versus gate voltage ($V_G$) results are compared. The flat band was Ion/Ioff ratio of ${\sim}10^7$, a transconductance of 179 nS and a mobility of ~10.104 cm2/Vs at $V_{DS}$ =1 V. Also bent to a radius curvature of 0.15cm and experienced by an approximately strain of 0.77 % are exhibited an Ion/Ioff ratio of ${\sim}10^7$, a transconductance of ~179 nS and a mobility of ${\sim}10.10 cm^2/Vs$ at $V_{DS}$ = 1V. The electrical characteristics of the FET are not changed very much. although the large strain is given on the device m the bent state.

• 한국진공학회지
• /
• 제8권4B호
• /
• pp.524-529
• /
• 1999

We deposited diamond phase carbon thin films on Si substrate by the electrolysis of methanol solution. A little amount of ammonia solution was added to increase the current density of the electrolyte. We analyzed films by XRD and SEM. The chemical change of electrolyte during the electrolysis process was characterized by FTIR. We obtained better quality diamond phase carbon films at a lower applying boltage(300V) and temperature ($40^{\circ}C$) by adding ammonia solution to methanol electrolyte. Diamond (111), (220), (311) peaks were shown distinctively in XRD graph. Addition of ammonia solution resulted in lowering the applying bias voltage to 300V and the substrate temperature to $40^{\circ}C$ still maintaining a high current density at 80mA/$\textrm{cm}^2$, which prohibited a great loss of solution from vaporization. Possible change of chemical reaction due to the addition of ammonia solution was also discussed.

• Journal of Advanced Marine Engineering and Technology
• /
• 제35권2호
• /
• pp.252-257
• /
• 2011

본 연구에서는 초경량성 마그네슘 재료를 엔진 블록, 실린더 헤드커버 등과 같은 박용기관에 적용하기 위한 환경 친화적 표면처리의 개발에 대하여 고찰하였다. 또한 이온플레이팅법에 의해 마그네슘 박막을 제작하고, 그 제작조건에 따라 변화하는 막의 결정배향성과 몰포로지가 경도특성에 미치는 영향을 해명하고자 하였다. 마그네슘 박막의 경도측정 결과, 아르곤 가스압의 증가에 따라 그 경도값이 상승하였 는데, 그 원인은 결정립계에 의한 강화와 성분 외 가스입자의 흡장효과에 의한 것으로 사료된다.

• 해양환경안전학회지
• /
• 제17권2호
• /
• pp.155-160
• /
• 2011

현재 지구온난화 등의 환경문제로 인해 각종 산업분야에서 정량화에 대한 요구가 증대되어 해양산업에도 그 수요가 증가하고 있는 실정이다. 따라서 본 연구에서는 차세대 경량화 재료인 마그네슘이 활용되기 위해서 반드시 극복해야할 가장 중요한 특성인 내식특성에 대하여 고찰하고, 그 내식특성 향상을 위한 마그네슘 박막의 Morphology나 결정배향성의 영향을 해명하고자 하였다. 실험결과로부터 제작한 Mg 박막의 전기화학적 내식특성은 Ar 가스압이 높은 조건에서 제작한 막일수록 내식특성이 우수하였다. 이러한 경향은 표면 및 단면의 Morphology와 결정배향성과의 상관관계를 통하여 설명 가능하였다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
• /
• pp.1025-1027
• /
• 2009

Novel low temperature deposition process for nano-crystalline Si thin film is developed with the hyper-thermal neutral beam (HNB) technology. By our HNB assisted CVD system, the reactive particles can induce crystalline phase in Si thin films and effectively combine with heating effect on substrate. At low deposition temperature under $80^{\circ}C$, the HNB with proper incident energy controlled by the reflector bias can effectively enhance the nano-crystalline formation in Si thin film without any additional process. The electrical properties of Si thin films can be varied from a-Si to nc-Si according to change of HNB energy and substrate temperature. Characterization of these thin films with conductivity reveal that crystalline of Si thin film can increase by assist of HNB with appropriate energy during low temperature deposition. And low temperature prcoessed nc-Si TFT performance has on-off ratio as order 5.

• Journal of Electrical Engineering and Technology
• /
• 제2권2호
• /
• pp.267-273
• /
• 2007

A depletion-mode MOSFET has been analyzed to evaluate its electrical behavior using a novel 3-D numerical simulation package. The characterizing analysis of the BC MOSFET was performed through short-channel narrow-channel and small-geometry effects that are investigated, in detail, in terms of the threshold voltage. The DIBL effect becomes significant for a short-channel device with a channel length of $<\;3({\mu}m)$. For narrow-channel devices the variation of the threshold voltage was sharp for $<4({\mu}m)$ due to the strong narrow-channel effect. In the case of small-geometry devices, the shift of the threshold voltage was less sensitive due to the combination of the DIBL and substrate bias effects, as compared with that observed from the short-channel and narrow-channel devices. The characterizing analysis of the narrow-channel and small-geometry devices, especially with channel width of $<\;4({\mu}m)$ and channel area of $<\;4{\times}4({\mu}m^2)$ respectively, can be accurately performed only from a 3-D numerical simulation due to their sharp variations in threshold voltages.