• Journal of Environmental Science International
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• v.22 no.11
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• pp.1443-1449
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• 2013

This was an experimental study to evaluate temperature reduction and evapotranspiration of extensive green roof. Three test cells with a dimension of $1.2(W){\times}1.2(D){\times}1.0(H)$ meters were built using 4-inch concrete blocks. Ten-centimeter concrete slab was installed on top of each cell. The first cell was control cell with no green roof installed. The second and third cells were covered with medium-leaf type Zoysiagrass (Zoysia japonica) above a layer of soil. Soil thickness on the second cell was 10cm and that on the third cell was 20cm. Air temperature, relative humidity and solar irradiance were measured using AWS (automatic weather system). Temperature on top surface and ceiling of the control cell and temperature on top surface, below soil and ceiling of green roof cells was measured. Evapotranspiration of the green roof cells were measured using weight changes. Compared with temperature difference on the control cell, temperature difference was greater on green roof cells. Between two green roof cells, the temperature difference was greater on the third cell with a thicker soil layer. Temperature differences below soil and on ceilings of green roof cells were found greater than those of the control cell. Between the green roof cells, there was no difference in the temperature reduction effects below soil and on ceilings based on substrate depth. In summary, green roof was found effective in temperature reduction due to evapotranspiration and shading effect.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.77.1-77.1
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• 2010

Durability problems of gas diffusion layer(GDL) is one of the important issues for accomplishing commercialization of proton exchange membrane fuel cell(PEMFC). GDL is strongly related to the performance of PEMFC because one of the main function of GDL is to work as a path of fuel, air and water. When the GDL is degraded, it causes water balance problems such as the flooding phenomenon. Thus, investigating the durability characteristics of the GDL is important and understanding the GDL degradation process is needed. In this study, the GDLs are degraded by carbon corrosion stress method which is the electrochemical degradation mode. To determine the effects of carbon corrosion of the GDL, 1.45 V of potential is imposed for 96 hours. In this manner, in the previous research, the structure between the substrate and the MPL is weaken. Further investigations are needed to clarify this phenomenon. Therefore, in this study, the carbon corrosion stress method is carried out with GDLs which have various MPL penetration levels and the effects of the MPL penetration level on the characteristics change of the GDL are analyzed. The changes in characteristics are measured with various properties of GDL such as weight, thickness and static contact angle. The degraded GDL shows loss of their properties.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.5
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• pp.183-188
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• 2020

Lead zinc niobate (PZN)-added lead zirconate titanate (PZT) thick films with thickness of 5~10 ㎛ were fabricated on silicon and sapphire substrates using aerosol deposition method. The contents of PZN were varied from 0 %, 20 % and to 40 %. The PZN-added PZT film showed poorer electrical properties than pure PZT film when the films were coated on silicon substrate and annealed at 700℃. On the other hand, the PZN-added PZT film showed higher remanent polarization and dielectric constant values than pure PZT film when the films were coated on sapphire and annealed at 900℃. The ferroelectric and dielectric characteristics of 20 % PZN-added PZT films annealed at 900℃ were compared with the result values obtained from bulk ceramic specimen with same composition sintered at 1200℃. As annealing temperature increased, dielectric constant increased. These came from enhanced crystallization and grain growth by post heat treatment.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.1
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• pp.81-89
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• 1999

The fabrication process for miniaturizing the Electronic Article Surveillance (EAS) sensor was studied using micromachining technique. Two types of sensor structure, free standing membrane type and diving beard type, were proposed and researched for establishing the fabrication process. The membrane type structure was easy to change the sensor shape but had the limitation for miniaturizing, because the size of the sensor depends on the silicon substrate thickness. The diving board type structure has the advantage of miniaturization and of free motion. Since the elastic modulus is not trio high, SiN film is expected to be adequate for the supporting membrane of magnetic sensor. The selectivity of $H_2O_2$for sputtered W with respect to Fe-B-Si, which was studded for magnetic sensor materials, was high enough to be removed after using as a protection layer. Therefore, the diving board type process using the silicon nitride film for the supporter of the sensor material and the sputtered W for protection layer is expected to be useful fur miniaturizing the Electronic Article Surveillance (EAS) sensor.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.16 no.4
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• pp.27-30
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• 2016

in this paper, to improve the narrow bandwidth problem of the microstrip antenna for WLAN and WiFi dual band array antenna was designed to satisfy the bandwidth of 3.6GHz and 5.2GHz it contained with IEEE 802. 11. The substrate of proposed microstrip array antenna is FR-4(er=4.3) and $25mm{\times}45mm{\times}0.8mm$ size and thickness t=0.035mm, and the simulation was used for CST Microwave Studio 2014. input return loss compared -10dB less than operates at and when gain 3.6GHz 2.516dB, 5.2GHz showed the results of 3.581dB. the antenna designed to be miniaturized and the be used in electronic devices such as mobile phone.

• Journal of Advanced Navigation Technology
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• v.24 no.3
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• pp.232-237
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• 2020

In this paper, a compact microstrip-fed dual-band planar antenna for global positioning system (GPS) and mobile handset applications is presented. Dual operating frequency bands are achieved by an open end L-shaped slot and a bent rectangular slot. The proposed antenna is designed and fabricated on the FR4 substrate with dielectric constant of 4.3, thickness of 1.6 mm and size of 57 × 57 ㎟. The measured impedance bandwidth (|S₁₁|≤ -10dB) of the fabricated antenna is 60 MHz(1550 ~ 1610 MHz) in the GPS band and 670 MHz (1690 ~ 2360 MHz) in the DCS / IMT-2000 band, covering the required bandwidths for GPS(1570 ~ 1580 MHz) and DCS / IMT-2000 (1710 ~ 2200 MHz) bands. In particular, it has been observed that antenna has a good omnidirectional radiation patterns as well as high gain of 2.36 dBi and its efficiency is more than 90 % over the entire frequency band of interest.

• Journal of Advanced Navigation Technology
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• v.21 no.4
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• pp.353-358
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• 2017

In order to reduce the size of the previous stepped slot antenna for UWB applications(3.1 ~ 10.6 GHz) to half, an open ended stepped slot antenna is proposed. The proposed antenna consists of a stepped slot etched on the ground plane as radiation part and a microstrip feed-line with rectangular patch on the top plane for wideband impedance matching. The proposed antenna is designed and fabricated on the FR4 substrate with dielectric constant of 4.3, thickness of 1.6 mm and size of $28.5{\times}32mm^2$. The measured impedance bandwidth (${\mid}S_{11}{\mid}{\leq}-10dB$) of the fabricated antenna is 7.99 GHz(3.01~11 GHz) which is sufficient to cover UWB band (3.1 ~ 10.6 GHz). In particular, it has been observed that antenna has a good omnidirectional radiation patterns and high gain over the entire frequency band of interest even though the size of the proposed antenna is reduced to half when compared with the previous antenna.

• Corrosion Science and Technology
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• v.17 no.2
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• pp.45-53
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• 2018

A new 80Ti-15Ta-5Zr wt% alloy surface was protected by anodic oxidation in phosphoric acid solution. The protective oxide layer (TiO2, ZrO2 and Ta suboxides and thickness of 15.5 nm) incorporated $PO{_4}^{3-}$ ions from the solution, according to high resolution XPS spectra. The AFM analysis determined a high roughness with SEM detected pores (20 - 50 nm). The electrochemical studies of bare and anodically oxidized Ti-15Ta-5Zr alloy in Carter-Brugirard saliva of different pH values and saliva with 0.05M NaF, pointed to a nobler surface for the protected alloy, with a thicker electrodeposited oxide layer acting as a barrier against aggressive ions. The oxidized alloy significantly decreased corrosion current densities and total quantity of ions released into the oral environment in comparison with the bare one, at higher polarisation resistance and protective capacity of the electrodeposited layer. The impedance data revealed a bi-layered oxidation film formed by: a dense, compact, barrier layer in contact with the metallic substrate, decreasing the potential gradient across the metal/oxide layer/solution interface, reducing the anodic dissolution and a more permissive, porous layer in contact with the electrolyte. The open circuit potential for protected alloy shifted to nobler values, with thickening of the oxidation film signifying long-term protection.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.306.1-306.1
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• 2016

ZnO semiconductor material has been widely utilized in various applications in semiconductor device technology owing to its unique electrical and optical features. It is a promising as solar cell material, because of its low cost, n-type conductivity and wide direct band gap. In this work ZnO/Si heterojunctions were fabricated by using pulsed laser deposition. Vacuum chamber was evacuated to a base pressure of approximately $2{\times}10^{-6}Torr$. ZnO thin films were grown on p-Si (100) substrate at oxygen partial pressure from 5mTorr to 40mTorr. Growth temperature of ZnO thin films was set to 773K. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnO target, whose density of laser energy was $10J/cm^2$. Thickness of all the thin films of ZnO was about 300nm. The optical property was characterized by photoluminescence and crystallinity of ZnO was analyzed by X-ray diffraction. For fabrication ZnO/Si heterojunction diodes, indium metal and Al grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. Finally, current-voltage characteristics of the ZnO/Si structure were studied by using Keithly 2600. Under Air Mass 1.5 Global solar simulator with an irradiation intensity of $100mW/cm^2$, the electrical properties of ZnO/Si heterojunction photovoltaic devices were analyzed.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.147.2-148
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• 2016

Light management technology is very important for thin film solar cells, which can reduce optical reflection from the surface of thin film solar cells or enhance optical path, increasing the absorption of the incident solar light. Using proper light trapping structures in hydrogenated amorphous silicon (a-Si:H) solar cells, the thickness of absorber layers can be reduced. Instead, the internal electric field in the absorber can be strengthened, which helps to collect photon generated carriers very effectively and to reduce light-induced loss under long-term light exposure. In this work, we introduced a chemical etching technology to make honey-comb textures on glass substrates and analyzed the optical properties for the textured surface such as transmission, reflection and scattering effects. Using ray optics and finite difference time domain method (FDTD) we represented the behaviors of light waves near the etched surfaces of the glass substrates and discussed to obtain haze parameters for the different honey-comb structures. The simulation results showed that high haze values were maintained up to the long wavelength range over 700 nm, and with the proper design of the honey-comb structure, reflection or transmission of the glass substrates can be enhanced, which will be very useful for the multi-junction (tandem or triple junction) thin film a-Si:H solar cells.