• 한국결정성장학회지
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• 제10권2호
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• pp.100-104
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• 2000

다이아몬드 박막을 마이크로웨이브 플라즈마 방법을 이용하여 실리콘 기판위에 증착하였다. 증착된 다이아몬드 박막과 실리콘 기판의 단면을 이온 밀링 방법으로 식각한후, 경계면을 투과 전자 현미경으로 분석하였다. 다이아몬드 박막은 실리콘 기판위에 직접 성장되거나 또는 중간층이 형성된후 성장됨을 알 수 있었다. 중간층의 구성은 주로 Sic 또는 무정형 탄소로 이루어졌으며 중간층의 두께는 경계면을 따라 다르게 변하였다. 전자 회절 패턴으로부터, 경계면 주위에 잘 발달된 실리콘 기판과 다이아몬드의 결정면들이 서로 적합하게 성장되었고 있음을 알 수 있었다. 이 결과들로부터 실리콘 기판위에 성장되는 다이아몬드 박막의 초기 성장 형태를 추론할 수 있었다.

• 한국전기전자재료학회논문지
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• 제23권4호
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• pp.327-332
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• 2010

We report on the effect of PET substrate preheating on the characteristics of the flexible and transparent indium tin oxide (ITO) electrode grown by a specially designed roll-to-roll sputtering system for touch panel applications. It was found that electrical and optical properties of the roll-to-roll sputter grown ITO film were critically dependent on the preheating of the PET substrate. In addition, the roll-to-roll sputter-grown ITO film after post annealing test at $140^{\circ}C$ for 90 min showed stable electrical and optical properties. The low sheet resistance and high optical transmittance of the ITO film grown on the preheated PET substrate demonstrate that the preheating process before ITO sputtering is one of the effective way to improve the characteristics of ITO/PET film. Furthermore, the superior flexibility of the ITO electrode grown on the preheated PET substrate indicates that the preheating treatment is a promising technique to obtain robust ITO/PET sample for touch panel applications.

• 한국전기전자재료학회논문지
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• 제26권9호
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• pp.686-689
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• 2013

The carbon nanowall (CNW) is a carbon-based nanomaterials and it was constructed with vertical structure graphenes and it has the highest surface density among carbon-based nanostructures. In this study, we have checked the growth properties of CNW according to the substrate angle. Microwave plasma enhanced chemical vapor deposition (PECVD) system was used to grow CNW on Si substrate with methane ($CH_4$) and hydrogen ($H_2$) gases. And, we have changed the substrate angle from $0^{\circ}$ to $90^{\circ}$ in steps of $30^{\circ}$. The planar and vertical conditions of the grown CNWs according to the substrate angle were characterized by a field emission scanning electron microscopy (FE-SEM) and energy dispersive spectroscopy (EDS). In case of the growth angle increases, our experimental results showed that the length of the CNW was shortened and the content of carbon component was decreased.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.92-92
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• 2011

IZTO and ITO thin films with a thickness of 200nm were deposited on Corning glass substrate to investigate the effects of substrate temperature on their electrical and optical properties by using pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt.%, ZnO 15 wt.%, SnO2 15 wt.%) and ITO (In2O3 90 wt.%, SnO2 10 wt.%). We investigated the structural, electrical, and optical properties of IZTO and ITO films. The structural and electrical properties of both films are sensitive on the substrate temperature. As the substrate temperature is increased, the electrical resistivity of ITO films is improved, but that of IZTO film increase over than $100^{\circ}C$. All IZTO and ITO thin films have good optical properties, which showed an average of transmittance over 80%. As a result, IZTO films can be a possible material for flexible display due to the low processing temperature.

• 한국재료학회지
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• 제24권7호
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• pp.344-350
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• 2014

Metal films (i.e., Ti, Al and SUH310S) were prepared in a magnetron sputtering apparatus, and their cross-sectional structures were investigated using scanning electron microscopy. The apparatus used consisted of a cylindrical metal target which was electrically grounded, and two anode rings attached to the top and to the bottom of the target. A wire was placed along the center-line of the cylindrical target to provide a substrate. When the electrical potential of the substrate was varied, the metal-film formation rate depended on both the discharge voltage and the electrical potential of the substrate. As we made the magnetic field stronger, the plasma which appeared near the target collected on the plasma wall surface and thereby decreased the bias current. The bias current on the conducting wire was different from that for cation collection. The bias current decreased because the collection of cations decreased when we increased the magnetic-coil current. When the substrate was electrically isolated, the films deposited showed a slightly coarse columnar structure with thin voids between adjacent columns. In contrast, in the case of the grounded substrate, the deposited film did not show any clear columns but instead, showed a densely-packed granular structure. No peeling region was observed between the film and substrate, indicating good adhesion.

• 한국표면공학회지
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• 제29권5호
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• pp.301-313
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• 1996

The texture of vapor deposits(PVD and CVD) changes from the orientation that places the lowest energy lattice plane parallel to the substrate under the condition of low atom or ion concentration adjacent to the deposit, to the orientation that places the higher energy crystal planes parallel to the substrate as the atom or ion concentration adjacent to the deposit increases. However, in the early stage of deposition, the deposit-substrate interface energy and the surface energy constitute the most important energies of the system. Therefore, if the lattice match is established between the substrate and the deposit without generating much strain energy, the epitaxial growth takes place to reduce the interfacial energy. When the epitaxial growth does not take place, the surface energy is dominant in the early stage of deposition and the lowest energy crystal plane tends to be placed parallel to the substrate up to a critial thickness. The thickness depends on the deposition condition. If the deposition condition does not favor placing the lowest energy crystal plane parallel to the substrate, the initial texture will change to that compatible with the deposition condition as the film thickness increases, and the texture turnover thickness will be short. The microstructure and surface topography of deposits are related to their texture.

• 한국생물환경조절학회:학술대회논문집
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• 한국생물환경조절학회 2001년도 봄 학술발표논문집
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• pp.41-42
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• 2001

The objectives of this study were to investigate the effect of the physical properties of wick on the water absorption of substrate. Physical properties of wick in this study were cotton composition, width and length. The water Infiltration rate through the wick was 0.24 ㎝/s at 90 -95% cotton content, which was faster than at 80-85% (0.13 cm/s) and 70-75% (0.08 cm/s). As the cotton content increased, the water absorption of substrate became greater : the amount of absorbed water was about 5-7g higher at 90-95% than at 80-85% and 70-75% at a wick width of 1 ㎝, the velocity of water absorption through the wick was fastest with 0.25 ㎝ㆍs/sup -1/. The amount of absorbed water was higher at 3 ㎝ than at 1 and 2 ㎝. However, the water absorption rate through the cross - sectional area of wick (g H₂O /㎠/hr) was higher at a wick width of 2 ㎝ than at those of 1 and 3 ㎝. The amount of absorbed water in the substrate was higher at 2 : 1 than at 1 : 1 (length in substrate : length out of substrate). Absorbed water amount was larger at 30-40% initial moisture content than any other treatment.

• 한국진공학회지
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• 제9권1호
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• pp.30-35
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• 2000

Indium-Tin Oxide (ITO) thin films were deposited on the commercial glass substrate by rf-magnetron sputtering. The ITO films with the thickness of 2,000~2,400 $\AA$ were prepared by changing the oxygen partial pressures of 2, 3, and 5%, as well as by changing the substrate temperature of $300^{\circ}C$ and $500^{\circ}C$. spectrophotometer, XRD, SEM, AFM, 4-point probe and Hall effect system were employed to characterize the ITO films. The optimum deposition conditions were the substrate temperature of $500^{\circ}C$ and oxygen partial pressure of 2-3%. At theses conditions, the ITO film showed the transmittance of 91%, the resistivity of $5.4\times10^{-3}\Omega$cm, the carrier concentration of $1.0\times10^{19}\textrm{cm}^{-3}$, and the carrier mobility of 150$\textrm{cm}^2$/Vsec. In XRD spectra, the (222) and (400) $In_2O_3$ planes were dominant under the optimum deposition conditions When the substrate was cleaned only by the method of ultrasonic cleaning without both pre-annealing and chemical treatment of the substrate, the ITO film exhibited the transmittance of 86%, the carrier concentration of $5.4\times10^{19}\textrm{cm}^{-3}$ and the mobility of 24$\textrm{cm}^2$/Vsec.

• 한국세라믹학회지
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• 제29권12호
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• pp.956-962
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• 1992

The predominant sintering mechanisms of low firing temperature ceramic substrate which consists of borosilicate glass containing alumina as a filler are the rearrangement of alumina particles and the viscous flow of glass powders. In this system, sintering condition depends on the volume ratio of alumina to glass and on the particle size. When the substrate contains about 35 vol% alumina filler and the average alumina particle size is 4 $\mu\textrm{m}$, the best firing condition is obtained at the temperature range of 900∼1000$^{\circ}C$. The extensive rearrangement behavior occurs at these conditions, and the optimum sintering condition is attained by smaller size of glass particles, too. The formation of cristobalite during sintering causes the difference of thermal expansion coefficient between the substrate and Si chip. This phenomenon degradates the capacity of Si chip. Therefore, the crystallization should be prevented. In the alumina filled borosilicate glass system, the crystallization does not occur. This effect may have some relation with aluminum ions in alumina. For aluminum ions diffuse into glass matrix during sintering, functiong as network former.

• Composites Research
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• 제13권3호
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• pp.38-47
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• 2000

기재위에 입혀진 코팅에서 발생하는 크랙킹 현상을 파괴역학을 이용해서 분석하였다. 코팅/기재 구조에서 굽힘모드시 발생하는 코팅크랙킹을 변분법을 이용하여 분석하였으며, 본 연구에서 유도된 변위에너지 방출량을 통해 기재위에 입혀진 코팅층에서 크랙이 확장되는 것을 예측할 수 있다. 본 연구를 통해 얻어진 코팅의 임계 변위에너지 방출량은 재료의 고유성질이며 코팅크랙킹의 보다 근본적인 의미를 제공할 수 있다.