• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.102-102
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• 2008

Sapphire (${\alpha}-Al_2O_3$) has been used as the substrate of opto-electronic device because of characteristics of thermal stability, comparatively low cost, large diameter, optical transparency and chemical compatibility. However, there is difficulty in the etching and patterning due to the physical stability of sapphire and the selectivity with sapphire and mask materials [1,2]. Therefore, sapphire has been studied on the various fields and need to be studied, continuously. In this study, the etching properties of sapphire substrate were investigated with various $CH_4$/Ar gas combination, radio frequency (RF) power, DC-bias voltage and process pressure. The characteristics of the plasma were estimated for mechanism using optical emission spectroscopy (OES). The chemical compounds on the surface of sapphire substrate were investigated using energy dispersive X-ray (EDX). The chemical reaction on the surface of the etched sapphire substrate was observed by X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to investigate the vertical and slope profiles.

• 한국진공학회지
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• 제6권1호
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• pp.20-27
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• 1997

0.25$\mu\textrm{m}$이하의 최소선폭을 같는 초고집적회로에 사용할 수 있는 구리박막의 형성기술 을 조사하였다. 본 실험에서는 측면박막 형성에 적합한 화학적 증착을 시도하였으며 (hfac)Cu(VTMS)(hexafluoroacetylacetonate vinyltrimethylisilane copper(I))로 명명된 금속 유기 화합물을 원료로 사용하였다. 구리박막의 형성은 TiN와 $SiO_2$모재 위에 이루어 졌으며, 형성 중에 모재의 온도와 증착용기 내 압력의 함수로서 집적회로 공정상 주요 변수인 박막 의 비저항, 박막의 증착선택도를 측정하였다. 구리박막은 모재온도 $180^{\circ}C$와 증착용기의 압력 0.6Torr의 조건에서 가장 좋은 전기적 성질을 보여 주었다. 이 조건에서 형성된 구리박막은 다결정 구조를 나타내었으며 구리박막의 증착속도는 120nm/min, 비저항은 0.25$mu \Omega$.cm, 평균거칠기는 15.5nm로서 0.25$\mu\textrm{m}$이하 선폭의 집적회로에서 요구되는 전기적, 재료적 사양에 근접한 구리박막을 얻었다. 또한 140-$250^{\circ}C$의 모재 온도 범위에서 TiN모재와 $SiO_2$모재 사 이에 뚜렸한 증착선택성이 관측되었다.

• Journal of Microbiology and Biotechnology
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• 제11권5호
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• pp.763-771
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• 2001

Biphenyl dioxygenase (BPDO), which catalyzes the first step in the bacterial degradation of biphenyl and polychlorinated biphenyls, was characterized in Pseudomonas sp. B4. The bphA locus containing the four structural genes encoding BPDO were cloned and sequenced. A regulatory gene as well as a putative regulatory sequence were identified upstream of this locus. A transposase-like gene was found within a 1-kb region further upstream, thereby suggesting that the bphA locus may be carried on a transposable element. The three components of the BPDO enzyme have been separately overexpressed and purified from E. coli. The ferredoxin and terminal dioxygenase components showed biochemical properties comparable to those of two previously characterized BPDOs, whereas the ferredoxin reductase exhibited an unusually high lability. The substrate selectivity of BPDO was examined in vivo using resting cell assays performed with mixtures of selected polychlorinated biphenyls. The results indicated that para-substituted congeners were the preferred substrates. In vitro studies were carried out on a BPDO complex where the reductase from strain B4 we replaced by the more stable isoform from Comamonas testosteroni B-356. The BPDO enzyme had a specific activity of $0.26{\pm}0.02 {\mu}mol {min^-1}{mg^-1}\;of\;ISP_{BPH}$ with biphenyl as the substrate. The 2,3-, 4,4'-, and 2,4,4'-chlorobiphenyls were converted to single dihydrodiols, while 2,4'-dichlorobiphenyl gave rise to two dihydrodiols. The current data also indicated that 2,4,4'-trichlorobiphenyl was a better substrate than the 4,4'-dichlorinated congener.

• 한국재료학회지
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• 제9권3호
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• pp.257-262
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• 1999

MOCVD를 이용하여 $SiO_2$로 패턴된 GaN/sapphire 기판상에서 $NH_3$유량과 성장온도가 GaN 성장의 선택성과 성장 특성에 미치는 영향을 조사하였다. $NH_3$유량을 500~1300sccm, 성장온도를 $950~1060^{\circ}C$로 변화시켜 성장변수에 따른 영향을 주사전자현미경으로 관찰하였다.$NH_3$유량이 증가할수록 성장선택성이 향상되었으나 기판윈도우에서 성장되는 GaN 형상변화에는 큰 영향을 미치지 못하였다. 성장온도가 높을수록 GaN의 성장선택성이 향상됨이 관찰되었다. 패턴 모양을 원형, 선형, 방사선모양(선형 패턴을 30, $45^{\circ}$로 회전)으로 제작하여 GaN 성장을 수행한 후 관찰한 결과 {1101}으로 이루어진 Hexagonal 피라밋 형상과 마스크층 위로의 측면성장을 얻을 수 있었으며, 성장조건에 따른 <1100>와 <1210>의 방향으로의 측면성장속도의 차이를 관찰할 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제13권3호
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• pp.144-148
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• 2012

In this work, we investigated to the etching characteristics of $TiO_2$ thin film and the selectivity using the inductively coupled plasma system. The etch rate and the selectivity were obtained with various gas mixing ratios. The maximum etch rate of $TiO_2$ thin film was 61.6 nm/min. The selectivity of $TiO_2$ to TiN, and $TiO_2$ to $SiO_2$ were obtained as 2.13 and 1.39, respectively. The etching process conditions are 400 W for RF power, -150 V for DC-bias voltage, 2 Pa for the process pressure, and $40^{\circ}C$ for substrate temperature. The chemical states of the etched surfaces were investigated with X-ray photoelectron spectroscopy (XPS). Its analysis showed that the etching mechanism was based on the physical and chemical pathways in the ion-assisted physical reaction.

• 한국표면공학회지
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• 제55권6호
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• pp.342-352
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• 2022

Purine catabolite screening enables reliable diagnosis of certain diseases. In this regard, the development of a facile detection strategy with high sensitivity and selectivity is demanded for point-of-care applications. In this work, the simultaneous detection of uric acid (UA), xanthine (XA), and hypoxanthine (HX) was carried out as model purine catabolites by surface-enhanced Raman Spectroscopy (SERS). The detection assay was conducted by employing high-aspect ratio Au nanopillar substrates coupled with in-situ Au electrodeposition on the substrates. The additional modification of the Au nanopillar substrates via electrodeposition was found to be an effective method to encapsulate molecules in solution into nanogaps of growing Au films that increase metal-molecule contact and improve substrate's sensitivity and selectivity. In complex solutions, the approach facilitated ternary identification of UA, XA, and HX down to concentration limits of 4.33 𝜇M, 0.71 𝜇M, and 0.22 𝜇M, respectively, which are comparable to their existing levels in normal human physiology. These results demonstrate that the proposed platform is reliable for practical point-of-care analysis of biofluids where solution matrix effects greatly reduce selectivity and sensitivity for rapid on-site disease diagnosis.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.850-853
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• 1992

A cryogenic electron cyclotron resonance plasma etching system has been built to study wafer-temperature in the silicon etching characteristics. The wafer temperature was controlled from -150 to +30 $^{\circ}C$ during etching using the liquid nitrogen cooled helium gas. Although silicon was etched isotropically in $SF_6$ plasma at room temperatures, we found that it is possible to suppress the etch undercut in Si by reducing a substrate temperature without side wall passivation. In addition, the selectivity of silicon to photoresist was improved considerably at a low wafer temperature. Etch rates, anisotropy and selectivity to photo resist are measured as a function of the wafer temperature in the region of -125 $\sim$ 25$^{\circ}C$ and rf bias power of 20W $\sim$ 80W.

• 한국진공학회지
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• 제5권2호
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• pp.169-174
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• 1996

The applications of the high density plasma sources to the etching in semiconductor fabrication process are actively studied because of the more strict requirement from the dry etching process due to shrinking down of the critical dimension. But in the oxide etching with the high density plasma sources, abundant fluorine atoms released from the flurocarbon feed gas make it difficult to get the highly selective $SiO_2/Si$ etching. In this study, to improve the $SiO_2/Si$ etch selectivity through the control of the radical loss channels, we propose the wall heating , one of methods of controlling loss mechanisms. With appearance mass spectroscopy(AMS) and actinometric optical emission spectroscopy(OES), the increase of both radicals impinging on the substrate and existing in bulk plasma, and the decrease of the fluorine atom with wall temperature are observed. As a result, a 40% improvement of the selectivity was achieved for the carbon rich feed gas.

• Bulletin of the Korean Chemical Society
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• 제12권4호
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• pp.406-410
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• 1991

Second order rate constants have been measured spectrophotometrically for reactions of 4-nitrophenyl substituted benzoates with various aryloxides and aryl benzoates with p-chlorophenoxide. The reactivity has exhibited significant dependences on the electronic nature of the substituent in the acyl moiety of the substrate and in the nucleophilic phenoxide, while the substituent in the leaving phenoxide has little influenced the reactivity. The Bronsted coefficient $\beta$ values so obtiained support that the present acyl transfer reaction proceeds via a stepwise mechanism in which the nucleophilic attack would be the rate-determining step. Interestingly, the magnitude of the $\betaacyl$ and $\beta$ nuc increases with increasing reactivity, implying that the reactivity selectivity principle is not operative in the present system. The failure of the reactivity selectivity principle is attributed to a change in transition state structure upon the substituent variation in the present acyl transfer reaction.

• Bulletin of the Korean Chemical Society
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• 제16권3호
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• pp.277-281
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• 1995

The relationship between the signs of ${\rho}i(0)$, ${\rho}j(0)$ and ${\rho}ij$ and validity of the reactivity-selectivity principle (RSP) has been derived: RSP is valid when W = ${\rho}i(0){\cdot}{\rho}j(0)/{\rho}ij$ is negative. The analysis of 100 reaction series indicated that for normal SN2 reactions involving variations of substituents in the nucleophile (X) and in the substrate (Y) RSP is valid only for a dissociative type for which ${\rho}Y(0)$ is negative, whereas for the acyl transfer reactions with rate-limiting breakdown of the tetrahedral intermediate RSP is valid in general for all substituent changes, X, Y and/or Z (substituent on the leaving group). The trends in the validity of RSP for certain types of reaction can be useful in supplementing the mechanistic criteria based on the signs of ${\rho}i(0)$, ${\rho}j(0)$ and ${\rho}ij$.