• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.191-191
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• 2009

$Bi_4Ti_3O_{12}$ (BiT) thin films were well developed on the Pt/Ti/$SiO_2/Si$ substrate by a metal organic decomposition (MOD) method. Oxygen was effective on the crystallization of the BiT thin films during a rapid thermal annealing process. The electrical properties of the BiT films dependant on the oxygen partial pressure were investigated. No crystalline phase was observed for the BiT film annealed at $700^{\circ}C$ under oxygen free atmosphere. However, its crystallinity was significantly evolutionned with increasing oxygen partial pressure. In addition, its dielectric and piezoelectric properties were enhanced with increasing oxygen partial pressure to 10 torr. Especially, the BiT film, annealed at $700^{\circ}C$ and 10 torr oxygen pressure, showed good dielectric properties: dielectric constant of 51 and dielectric loss of 0.2 % at 100 kHz. Its leakage current and piezoelectric constant ($d_{33}$) was also considerably improved, being as 0.62 nA/$cm^2$ at 1 V and approximately 51 pm/V, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.9 s.100
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• pp.872-882
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• 2005

In this paper, we examined the operating principle of a passive tag antenna for RFID system in UHF band. Based on the study, we proposed a novel RFID tag antenna which adopts the inductively coupled feeding structure to match antenna impedance to a capacitively loaded commercial tag chip. The proposed tag antenna consists of microstrip lines on a thin PET substrate for low-cost fabrication. The detail structure of the tag antenna were optimized using a full electromagnetic wave simulator of IE3D in conjunction with a Pareto genetic algorithm and the size of the tag antenna can be reduced up to kr=0.27($2 cm^2$). We built some sample antennas and measured the antenna characteristics such as a return loss, an efficiency, and radiation patterns. The readable range of the tag antenna with a commercial RFID system showed about 1 to 3 m.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.8
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• pp.737-743
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• 2004

A fixed-tuned SIS(Superconductor-Insulator-Superconductor) mixer across 120∼180 GHz band has been developed. This mixer employs an SIS chip fabricated by Nobeyama radio observatory which consists of a series array of 6 Nb/Al-Al$_2$O$_3$/Nb junctions in a microstrip line on a fused quartz substrate. The SIS chip is placed at the center of the half-height waveguide mixer mount to have a good incoming signal coupling over the whole frequency band. No mechanical tuner was used in the SIS mixer and the RF signal and local oscillator power are injected to the mixer via a cooled cross-guide coupler. In order to prevent the IF signal loss, the If output impedance of the SIS mixer was matched to the 50 $\Omega$ input impedance of the IF chain. Measured double sideband noise temperatures of a receiver using the SIS mixer are 32∼131 K over 120∼180 GHz band. The developed SIS mixer is now in use for radio astronomical observations on the TRAO 14 m radio telescope.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.6
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• pp.612-620
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• 2008

In this parer, parabolic edge planar monopole antenna for UWB communication is presented. The antenna have broadband property structurally through planar monopole and ground which have parabolic edge. It is designed close to self-complementary structure as changing curvature of edge of monopole and ground. Monopole and ground of proposed antenna exist on coplanar plane, and excite as coaxial feeding. It used FR4 dielectric substrate of ${\varepsilon}_r=4.4$, and the size is $26{\times}31{\times}1.6mm$. Return loss is more than 10 dB in $3.1{\sim}10.6GHz$. Radiation pattern is about the same that of dipole antenna at all frequency. At measured result, max gain is $1.37{\sim}6.02dBi$ at E-plane.

• Korean Journal of Microbiology
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• v.24 no.3
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• pp.251-262
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• 1986

High-molecular-weight ${\beta}-glucosidase$ (EC 3.2.1.21) was purified from the culture filtrate of Trichoderma koningii through a four-step procedure including chromatography on Bio-Gel P-150, DEAE-Sephadex A-50 and SP-Sephadex C-50; and chromatofocusing on Polybuffer exchanger PBE 94. The molecular weight of the enzyme was determined to be about 101,000 by SDS-polyacrylamide gel electrophoreses, and the isoelectric point was estimated to be 4.96 by analytical isoelectric focusing. The temperature optimum for activity was about $55^{\circ}C$, and the pH optimumwas 3.5. The enzyme was considerably thermostable, for no loss of activity was observed when the enzyme was preincubated at $60^{\circ}C$ for 5h. Km values for cellobiose, gentiobiose, sophorose, salicin and $p-nitrophenyl-{\betha}-D-glucoside$ were 99.2, 14.7, 7.09, 3.15 and 0.70 mM, respectively, which indicates that the enzyme has much higher affinity towards $p-nitrophenyl-{\betha}-D-glucoside$ than towards the other substrates, especially cellobiose. Substrate inhibition by $p-nitrophenyl-{\betha}-D-glucoside$ and salicin was observed at the conecntrations exceeding 5mM. Gluconolactone was a powerful inhibitor against the action of the enzyme on $p-nitrophenyl-{\betha}-D-glucoside\;(K_i\;37.9\;{\mu}M)$, wherease glucose was much less effective ($K_i$ 1.95 mM). Inhibition was of the competitive type in each case. Transglucosylation activity was detected shen the readtion products formed from $p-nitrophenyl-{\betha}-D-glucoside$ by the enzyme were analysed using high-performance liquid chromatography.

• Korean Journal of Materials Research
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• v.11 no.11
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• pp.960-964
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• 2001

$Bi_{3.99}Ti_{2.97}V_{0.03}O_{12}$ (BTV) thin films with 3 mol% vanadium doping were Prepared on $Pt/Ti/SiO_2/Si$ substrate by sol-gel method. X-ray diffraction analysis indicated that single-phase layered perovskite were obtained and preferred orientation was not observed. Under the annealing temperature at $600^{\circ}C$, the surface morphology of the BTV thin films had fine-rounded particles and then changed plate-like at $650^{\circ}C$ and $700^{\circ}C$. The remanent polarization $(2P_r)$ and coercive field $(2E_c)$ of $700^{\circ}C$ annealed BTV thin film were 25 $\mu$C/cm$^2$ and 116 kV/cm, respectively. In addition, BTV thin film showed little polarization fatigue during $10_9$ switching cycles. These improved ferroelectric properties were attributed to the increased rattling space and reduced oxygen vacancies by substitution $Ti^{4+}$ ion (68 pm) with smaller $V^{5+}$ ion (59 pm). The dielectric constant and loss were measured 130 and 0.03 at 10 kHz, respectively.

• BMB Reports
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• v.28 no.2
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• pp.112-117
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• 1995

Succinic semialdehyde reductase was inactivated by o-phthalaldehyde. The inactivation followed pseudo-first order kinetics, and the second-order rate constant for the inactivation process was 28 $M^{-1}s^{-1}$ at pH 7.4 and $25^{\circ}C$. The absorption spectrum ($\lambda_{max}$ 337 nm) and fluorescence excitation ($\lambda_{max}$ 340 nm) and fluorescence emission spectra ($\lambda_{max}$ 409 nm) were consistent with the formation of an isoindole derivative in the catalytic site between a cysteine and a lysine residue approximately about 3 $\AA$ apart. The substrate, succinic semialdehyde, did not protect enzymatic activity against inactivation, whereas the coenzyme NADPH protected against o-phthaladehyde induced inactivation of the enzyme. About 1 isoindole group per mol of the enzyme was formed following complete loss of enzymatic activity. These results suggest that the amino acid residues of the enzyme participating in a reaction with o-phthalaldehyde are cysteinyl and lysyl residues at or near the NADPH binding site.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.3
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• pp.527-536
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• 2000

This paper discusses the design of self-oscillating mixer type low noise down converter using the microwave field effect transistor. The mixer is consists of local oscillator in which high stability dielectric resonator and band pass filter to get rid of spurious oscillation at intermediate frequency stage. The microstrip antenna was integrated in the same substrate which generate 12.3GHz and low noise amplifier was also added after antenna using 3 stage of high electron mobility transistors. The output frequency from the local oscillator was chosen as 11.3GHz for the Ku-band application. The measured phase noise was -804dBc/Hz at 100kHz offset frequency, and the gain was 7～12dB in frequency range from 12.0GHz to 12.7GHz. The noise figure at intermediate frequency stage was 64H. The designed model shows less conversion loss than previous diode type mixer. The proposed mixer can be used in digital satellite broadcasting and communication system and expected to use in next generation low noise block design.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.136-136
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• 2003

In fiber optic networks, system size and cost can be significantly reduced by development of optical components through planar optical waveguides. One important step to realize the compact optical devices is to develop planar optical amplifier to compensate the losses in splitter or other components. Planar amplifier provides optical gain in devices less than tens of centimeters long, as opposed to fiber amplifiers with lengths of typically tens of meters. To achieve the same amount of gain between the planar and fiber optical amplifier, much higher Er doping levels responsible for the gain than in the fiber amplifier are required due to the reduced path length. These doping must be done without the loss of homogeniety to minimize Er ion-ion interactions which reduce gain by co-operative upconversion. Sol-gel process has become a feasible method to allow the incorporation of Er ion concentrations higher than conventional glass melting methods. In this work, Er-doped $SiO_2$-A1$_2$ $O_3$ films were prepared by two different method via sol -Eel process. Tetraethylorthosilicate(TEOS)/aluminum secondary butoxide [Al (OC$_4$ $H_{9}$)$_3$], methacryloxypropylcnethoxysaane(MPTS)/aluminum secondary butofde [Al(OC$_4$ $H_{9}$)$_3$] systems were used as starting materials for hosting Er ions. Er-doped $SiO_2$-A1$_2$ $O_3$ films obtahed after heat-treating, coatings on Si substrate were characterized by X-ray din action, FT-IR, and N-IR fluorescence spectroscopy. The luminescence properties for two different processing procedure will be compared and discussed from peak intensity and life time.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.1
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• pp.8-14
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• 2016

In this paper, a compact CPW-fed antenna for 5 GHz (5.15-5.35 GHz, 5.725-5.825 GHz) band WLAN applications is presented. The designed antenna's shape is step structure. The antenna is fabricated and measured into FR-4 substrate of dielectric comstant 4.2 and thickness 1.0 mm with optimized parameters obtained by simulation. We confirm that it is operated as antenna for WLAN applications by obtaining the measured return loss level of < -10 dB in 5.133-5.982 GHz. The dimensions of the antenna ($20.0{\times}16.0{\times}1.0mm^3$) shows an compactness of about 67.17% with respect to a conventional folded slot antenna.