• 한국산학기술학회논문지
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• 제12권12호
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• pp.5827-5831
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• 2011

본 논문에서는 5GHz 대역의 무선랜용으로, 대역폭 확대와 고이득에 중점을 둔 마이크로스트립 패치 안테나를 패치의 크기(W, L), 슬롯의 길이(C), 슬롯의 폭(D) 등의 설계 파라미터에 대한 영향을 HFSS (High Frequency Structural Simulator)을 이용하여 분석 한 후, FR-4기판을 사용하여 안테나를 제작하고 특성을 분석하였다. 제작된 안테나 특성 측정 결과, 안테나의 중심 주파수는 5.2GHz, 반사손실은 -41.17dB, 대역폭은 258MHz의 특성을 보였고, 또한 VSWR은 1.1의 값을 얻을 수 있었다

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.125-128
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• 1999

(Ba$_{0.6}$Sr$_{0.4}$)TiO$_3$(BST) thin films were fabricated with different deposition temperature by Pulsed Laser Deposition(PLD). This BST thin films showed a maximum dielectric constant value of $\varepsilon$$_{r}$=~684 and dielectric loss was ~0.01 when substrate temperature was 75$0^{\circ}C$. Charge storage density of BST thin film was 4.733 [$\mu$C/$\textrm{cm}^2$] and estimated charging time was 0.15 nsec. Leakage current density of BST thin film was below 10$^{-7}$ [A/$\textrm{cm}^2$] at 3V. 3V.V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.311-314
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• 1999

Ferroelectric PZT heterolayered thin films were fabricated by spin coating method on the Pt/Ti/SiO$_2$/Si substrate using PZT(10/90) and PZT(90/10) metal alkoxide solutions. All PZT heterolayered films showed a homogeneous grain structure without presence of the rosette structure. It can be assumed that the lower PZT layers a role of nucleation site or seeding layer for the formation of the upper PZT layer. Zr and Ti diffusion into the Pt electrode were mainly distributed at the surface of Pt electrode beneath the PZT/Pt interface. The PZT/Pt interfacial layer showed a microstructure characterized by a grain phase surrounded by a Pb-deficient pyrochlore matrix phase. The relative dielectric constant and the dielectric loss of the PZT-6 film were 567 and 3.6, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.300.2-300.2
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• 2013

Periodically shaped pillar-arrays and hole-arrays were fabricated on a Si wafer. Geometric features are similar in a periodic length of 4 ${\mu}m$ and a depth of 2 ${\mu}m$. For the hole-array patterns, positive PR processes were performed. UV exposed PR patterns were removed during a developing process to leave shapes of inversely replicated from a glass photomask. Meanwhile, negative PR processes were taken for the pillar-array patterns. UV exposed PR patterns were remained on a Si substrate having a same feature of patterns of a glass photomask. For an electrical aspect, a pillar structure has a short carrier-collection length resulting in the improved open-circuit voltage of 609 mV from 587 mV of a planar device. An improved performance may be achieved to reduce recombination loss along the patterning surface.

• 한국표면공학회지
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• 제22권3호
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• pp.109-117
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• 1989

The effect of heft treatment on the characteristic properties of insulation layer is studied for two kinds of non-oriented silicon steels, which were insulation-coates with various kinds of inorganic and inorganic-organic complex coating solutions. In addition, how the carbon contained in the insulation layer would affect the carbon content and the magnetic properties of the steel substrates is examined. Lower temperature heat treftment ($480^{\circ}C$ for 0.5hr) is found to render morw favorable surface qualities, wheras higher temperature heat treatment ($790^{\circ}C$ for 2hr) better core loss due to grin growt occurred during the heat treatment. Decarburization of the steel substrate is also found unaffectrd by the presence of carbon in the insulation layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.663-666
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• 2004

In this paper, we have investigated the structure and dielectric properties of the $(Ba_{0.6}Sr_{0.4})TiO_3$ (BST) thin films film fabricatedon MgO(100)/Si substrate by an alkoxide-based sol-gel method. Both the structure and morphology of films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). For the MgO(100)/Si substrates, the BST thin films exhibited highly (100) orientation. The highly (100)-oriented BST thin films showed high dielectric constant, tunability, and figure of merit (FOM). The dielectric constants, dielectric loss and tunability of the BST thin films annealed at 700 C deposited on the MgO(100)/Si substrates measured at 10 kHz were 515.9, 0.0082, and 54.3 %, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.932-934
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• 2004

Due to the increasing variety and capacity of information and communication media, systems of microwave band communication have branched out extensively. Surface acoustic wave (SAW) devices fabricated FeSiB thin films on quartz substrate were deposited by RF magnetron sputter and by photolithographic processes. This device is with a center frequency 146MHz and the insertion loss as low as -43dB was obtained.

• Bulletin of the Korean Chemical Society
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• 제18권1호
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• pp.44-50
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• 1997

A method of dual-signal generation from two different enzymes was developed and utilized to simultaneously perform dual immunoassays in a single microwell. Two enzymes selected as tracers were horseradish peroxidase (HRP) and β-galactosidase (GAL). 3, 3', 5, 5'-Tetramethylbenzidine (TMB) and chlorophenolred-β-galactopyranoside (CPRG) as chromogenic substrates for the respective enzyme were used. Although the two enzymes showed their maximum activities at distinct pH conditions (pH 5.1 for HRP and 7.5 for GAL), the enzyme reactions were able to be concurrently carried out at pH 5.75 in a dual-substrate solution without signal loss. This performance was achieved by increasing TMB concentration two-fold, introducing potassium salt as activator of GAL reaction, and extending total reaction time 50%. The signal generation method was then used for dual-enzyme immunoassays to detect antibodies with co-immobilized Hepatitis C virus antigens (core and NS5) and a Hepatitis B virus antigen (PreS(2)) in a microwell. Dose-response curves of the assays revealed cooperativity between different antigen-antibody complex formation, which suggested that dual immunoassays can only be used for qualitative screening tests unless the antigens immobilized were spatially separated.

• 대한전자공학회논문지
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• 제23권6호
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• pp.868-873
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• 1986

The Schottky barrier diode has been used as an element of the mixer inspite of its conversion loss. In this paper the use of a GaAs MESFET is shown as a device of mixer, and the conversion gain is obtained. Also, input matching circuits aredesigned by s-parameter and fabricated on a dielectric teflon epoxy fiber glass substrate. According to the results, the conversion gain is 9 dB at the signal frequency of 4 GHz and the intermediate frequency of 1.217GHz.

• 한국정보통신학회논문지
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• 제14권3호
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• pp.547-551
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• 2010

본 논문에서는 4개의 브라지를 가진 두 개의 사각형 패치로IEEE 802.11b/g(2.4GHz)와 802.11a(5.7GHz)의 해석을 연구하였다. 5.7GHz 대역의 사각형 패치는PCB기판에 인쇄되어 있고, 4개의 브리지를 포함하는 2.4GHz 대역의 사각 형 패치를 연결하여 이중대역 안테나로 동작한다. 제안된 안테나는 간단한 구성으로 $50{\Omega}$의 동축케이블에 의해 급전된다. 설계 되어진 안테나의 기판의 유전율은 $\varepsilon_r$ = 3.27이며, 2.4GHz와 5.7GHz의 공진주파수를 갖는 두 개의 사각 패치를 4개의 브리지를 이용하여 연결함으로써 이중대역의 특성을 나타나게 하였다. 제안된 안테나는 무선랜의 2.4GHz와 5.7 GHz의 이중대역에서 -10dB이하의 입력대비 반사손실의 결과를 얻었다.