• Title/Summary/Keyword: Substrate loss

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Application of Micromachining in the PLC Optical Splitter Packaging

  • Choi, Byoung-Chan;Lee, Man-Seop;Choi, Ji-Hoon;Park, Chan-Sik
    • Journal of the Optical Society of Korea
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    • v.7 no.3
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    • pp.166-173
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    • 2003
  • This paper presents micromachining results on planar-lightwave-circuit (PLC) chips with Si substrate and the quartz substrate by using Ti:Sapphire femtosecond-pulsed laser. The ablation process with femtosecond laser pulses generates nothing of contamination, molten zone, microcracks, shock wave, delamination and recast layer. We also showed that the micromachine for PLC using femtosecond pulsed lasers is superior to that using nanosecond pulsed lasers. The insertion loss and the optical return loss of the 1 ${\times}$ 8 optical power splitters packaged with micromachined input- and output-port U-grooves were less than 11.0 ㏈ and more than 55 ㏈, respectively. The wavelength dependent loss (WDL) was distributed within $\pm$0.6 ㏈ and the polarization dependent loss (PDL) was less than 0.2 ㏈.

Dielectric Characteristics of Polytetrafluoroethylene-based Composites for Microwave Substrates with Formation Pressure (고주파 기판용 PTFE 복합체 형성 압력에 따른 유전 특성)

  • Choi, Hong Je;Chun, Myung Pyo;Cho, Yong Soo;Cho, Hak Rae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.6
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    • pp.429-433
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    • 2013
  • PTFE composites for use of microwave substrate were fabricated by impregnation and heat treatment fabrication with glass fabric. This study shows dielectric properties such as dielectric constant and loss can be controlled by thickness of PTFE composite with change of pressure condition in heating press process. The dielectric constant of the PTFE composites has decreasing tendency as given higher pressure condition. The dielectric loss has similar result too. Especially, the case of the dielectric loss was affected by the condition of pressure at heating press and had the best performance under 3 MPa. In order to see the reason why thickness conditions make different, their microstructures were also observed.

Fabrication of a Miniaturized 5.8 GHz filter using a GaAs Substrate (GaAs 기판을 이용한 5.8 GHz 소형 필터제작)

  • Song, Ki-Young;Kim, Kyoung-Taek;Jung, Sung-Hae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.6
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    • pp.598-601
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    • 2004
  • A microstrip filter has been designed and fabricated in hairpin form on a GaAs substrate and its characteristics such as the insertion loss, return loss, and bandwidth have been investigated. The presented filter is realized with relatively small size, 4.5 by 3.6 mm. The insertion loss and return loss of the filter are 1.17 dB and 30 dB, respectively. The filter exhibits 3 dB-bandwidth of 350 MHz at the center frequency, 5.890 GHz. The experimental results show good agreement with the numerical ones. However, the measured center frequency is about 100 MHz higher than the designed one.

Miniaturized Broadband ENG ZOR Antenna Using a High Permeability Substrate

  • Ko, Seung-Tae;Lee, Jeong-Hae
    • Journal of electromagnetic engineering and science
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    • v.11 no.3
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    • pp.201-206
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    • 2011
  • This paper presents a miniaturized epsilon negative (ENG) zeroth-order resonance (ZOR) patch antenna with an improved bandwidth. The miniaturization and the broad bandwidth of the ENG ZOR patch antenna are achieved by using a meandered via and a high permeability substrate instead of a straight via and a dielectric substrate. The use of a meandered via allows miniaturization of the ENG ZOR patch antenna without narrowing the bandwidth. The use of a high permeability substrate allows further miniaturization of the ENG ZOR patch antenna and improvement of the bandwidth. A high permeability substrate consisting of a multi-layered substrate is designed to have a small material loss. The antenna (kr=0.32) has a 10 dB fractional bandwidth of ~1 %, which is 1.74 times as broad as that of an antenna with a dielectric substrate.

Millimeter-wave waveguide transducer using extended E-plane probe (연장된 E-plane 프로브를 이용한 밀리미터파 도파관 변환기)

  • Park, Woojin;Choe, Wonseok;Lee, Kookjoo;Kwon, Junbeom;Jeong, Jinho
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.18 no.1
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    • pp.159-165
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    • 2018
  • In this paper, a low-loss wideband waveguide transducer is proposed for millimeter-wave communication and radar applications. A conventional E-plane probe transducer is generally designed using thin and flexible substrate at millimeter-wave frequencies, considering the very small waveguide size. However, it results in serious performance degradation caused by the bending of the substrate. In order to alleviate this problem and provide a reliable performance, we propose an extended E-plane probe transducer where the probe substrate is extended to and fix ed in the slit area formed in the waveguide wall. It is fabricated using $127{\mu}m$-thick substrate with dielectric constant of 2.2. The measurement in the back-to-hack configuration shows the excellent insertion loss of 1.35 dB (${\pm}0.35dB$) including the loss of 3 cm-long thru waveguide and return loss better than 13.8 dB over entire W-band (75-110 GHz). Therefore, it can be effectively applied for millimeter-wave high-speed communications and high-sensitivity radars.

A Study on Microstrip Patch Array Antenna Integrated on SIW Network for SoS (SoS를 위한 SIW 망에 집적된 마이크로스트립 패치 어레이 안테나에 관한 연구)

  • Ki, Hyeon Cheol
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.18 no.5
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    • pp.63-68
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    • 2018
  • In this paper, We intended to design various things for the realization of SoS(System on Substrate) with SIW in 24GHz ISM 밴드(24-24.25GHz). As part of them, We integrated SIW, transition and MPAA as SoS on the same substrate and investigated its characteristics. We used Rogers Ro4350 with relative permittivity of 3.48 and thickness of 20mil. As results of optimal design, insertion loss of the SIW with 11.55mm length showed 0.32dB and insertion loss of 0.19dB occurred in transition to $50{\Omega}$ microstrip. Characteristics of the MPAA integrated on the same substrate as SoS are very similar to those of stand-alone MPAA. But the integrated MPAA decreased by 0.58dB in gain, which is the sum of SIW insertion loss and transition insertion loss, and by 0.7dB in SLL compared that of stand-alone MPAA. However, the bandwidth was increased by 19.4% as it changed from 670MHz to 800Mhz.

The Fabrication and Characterization of Embedded Switch Chip in Board for WiFi Application (WiFi용 스위치 칩 내장형 기판 기술에 관한 연구)

  • Park, Se-Hoon;Ryu, Jong-In;Kim, Jun-Chul;Youn, Je-Hyun;Kang, Nam-Kee;Park, Jong-Chul
    • Journal of the Microelectronics and Packaging Society
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    • v.15 no.3
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    • pp.53-58
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    • 2008
  • In this study, we fabricated embedded IC (Double Pole Double throw switch chip) polymer substrate and evaluate it for 2.4 GHz WiFi application. The switch chips were laminated using FR4 and ABF(Ajinomoto build up film) as dielectric layer. The embedded DPDT chip substrate were interconnected by laser via and Cu pattern plating process. DSC(Differenntial Scanning Calorimetry) analysis and SEM image was employed to calculate the amount of curing and examine surface roughness for optimization of chip embedding process. ABF showed maximum peel strength with Cu layer when the procuring was $80\sim90%$ completed and DPDT chip was laminated in a polymer substrate without void. An embedded chip substrate and wire-bonded chip on substrate were designed and fabricated. The characteristics of two modules were measured by s-parameters (S11; return loss and S21; insertion loss). Insertion loss is less than 0.55 dB in two presented embedded chip board and wire-bonded chip board. Return loss of an embedded chip board is better than 25 dB up to 6 GHz frequency range, whereas return loss of wire-bonding chip board is worse than 20 dB above 2.4 GHz frequency.

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Power Semiconductor SMD Package Embedded in Multilayered Ceramic for Low Switching Loss

  • Jung, Dong Yun;Jang, Hyun Gyu;Kim, Minki;Jun, Chi-Hoon;Park, Junbo;Lee, Hyun-Soo;Park, Jong Moon;Ko, Sang Choon
    • ETRI Journal
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    • v.39 no.6
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    • pp.866-873
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    • 2017
  • We propose a multilayered-substrate-based power semiconductor discrete device package for a low switching loss and high heat dissipation. To verify the proposed package, cost-effective, low-temperature co-fired ceramic, multilayered substrates are used. A bare die is attached to an embedded cavity of the multilayered substrate. Because the height of the pad on the top plane of the die and the signal line on the substrate are the same, the length of the bond wires can be shortened. A large number of thermal vias with a high thermal conductivity are embedded in the multilayered substrate to increase the heat dissipation rate of the package. The packaged silicon carbide Schottky barrier diode satisfies the reliability testing of a high-temperature storage life and temperature humidity bias. At $175^{\circ}C$, the forward current is 7 A at a forward voltage of 1.13 V, and the reverse leakage current is below 100 lA up to a reverse voltage of 980 V. The measured maximum reverse current ($I_{RM}$), reverse recovery time ($T_{rr}$), and reverse recovery charge ($Q_{rr}$) are 2.4 A, 16.6 ns, and 19.92 nC, respectively, at a reverse voltage of 300 V and di/dt equal to $300A/{\mu}s$.

Effect of Adjustable Antenna Substrate Thickness on Aperture-Coupled Microstrip Antenna

  • Somsongkul, T.;Lorpichian, A.;Janchitrapongvej, K.;Anantrasirichai, N.;Wakabayashi, T.
    • 제어로봇시스템학회:학술대회논문집
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    • 2003.10a
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    • pp.1664-1667
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    • 2003
  • Aperture-coupled microstrip antenna is one type of microstrip antennas. This type of antenna has bandwidth wider than simple microstrip antenna. Herein, we use two substrates, that have the same dielectric constant 2.47 (PTFE-quartz) in which upper substrate is a rectangular patch. The microstrip patch is fed by a microstrip line which is printed on lower substrate, through an aperture or slot in the common ground plane of patch and microstrip feed. This antenna is analyzed by using Finite Difference Time Domain (FDTD) method the specific design frequency 10 GHz and match impedance is 50 ohms. The simulation results of its characteristics are input impedance, return loss, VSWR and radiation patterns respectively.

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A Study on the ZnO Thin Film SAW Filter by RF Sputter (RF 마그네트론 스퍼터링에 의한 ZnO 박막 SAW 필터에 관한 연구)

  • 박용욱;신형용;박정흠;강종윤;심성훈;최지원;윤석진;김현재;김경환
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.6
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    • pp.481-486
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    • 2001
  • ZnO thin films on glass substrate were depostied by RF magnetron reactive sputter with various argon/oxygen gas ratios and substrate temperatures. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, SEM, XPS and electrometer(keithley 617). All films showed a strong preferred orientation along the c-axis on glass substrate, and the chemical stoichiometry was obtained at Ar/O$_2$.=50/50. The propagation velocity of ZnO SAW filter was about 2,590 m/sec and insertion loss was a minimum value of abut -21dB.

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