• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.5
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• pp.2319-2324
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• 2012

In this paper, the design of asymmetric branch line couplers using artificial dielectric substrate (ADS) is described. The effective permittivity and permeability increase in ADS because of the lots of the inserted via-holes. So the physical length and width of transmission lines realized on ADS are reduced compared to the standard lines. This enables one to design size-reduced microwave circuits. As an instance in this work, an asymmetric branch line coupler with the ratio of 3:1 is designed at 2GHz. The designed coupler has a small size of 53.4% compared to the normal circuit while the same performances are preserved. A good agreement between the simulated and measured asymmetric power dividing ratio is shown. The measured loss is only less than 0.2dB, which is a very small value.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.4
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• pp.470-480
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• 2011

Analog ferrite phase shifters based on rectangular waveguides which are used as component of passive phased array system have high power handling capability, but it is heavy and has high cost to fabricate. In this paper, we propose an analog ferrite phase shifter using substrate integrated waveguide(SIW), which has low cost and is easy to fabricate because it uses printed circuit board(PCB) process. The proposed structure is fabricated by using centeral dielectric material removal for inserting a ferrite bar. The measured results show that the proposed structure has not only $5.1^{\circ}$/mm phase variation but also return loss variation under 12.9 dB. Therefore, it is expected that the proposed phase shifter can plays an role to reduce weight and to has low cost on the phased array system.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.2
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• pp.216-219
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• 2016

In this paper, the SIW(Substrate Integrated Waveguide)-based feeding antenna for the application of SDR(Software Defined Radar) is designed and manufactured. It is usually well-known that SIWs are easily integrated on PCB and have low transmission loss toward high powered input signal. Also, it is recommended that SIWs are strongly immunized to Electromagnetic Interferences(EMI). In particular, the manufactured antennas are loaded on the USRP(Universal Software Radio Peripheral) platform and employed to detect target RCS as an experiment in this paper. The operating frequency of the proposed antenna is in ISM(Industrial, Scientific and Medical) band(2.4~2.48 GHz) and the measured gain is over 8 dBi at 2.44 GHz.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.57 no.2
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• pp.140-145
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• 2008

The purpose of this paper is to discuss the fabrication of $\beta$-PVDF($\beta$-Polyvinylidene fluoride, ${\beta}-PVF_2$) organic thin films using the vapor deposition method. Vapor deposition was performed under the following conditions: the temperature of evaporator, the applied electric field, and the pressure of reaction chamber were $270^{\circ}C$, 142.4 kV/cm, and $2.0{\times}10^{-5}\;Torr$, respectively. The molecular structure of the evaporated organic thin films were evaluated by a FT-IR. The results showed that the characteristic absorption peaks of $\beta$-form crystal increase from 72% to 95.5% with an increase in the substrate temperature. In the analysis of the electric characteristics, the abnormal increases in the relative dielectric constant and the dielectric loss factor in the regions of low frequency and high temperature are known to be caused by inclusion of impurity carriers in the PVDF organic thin films. In order to analyze quantitatively the abnormalities in the conductivity mechanism caused by ionic impurities, the product of the ion density and the mobility that affect the electrical property in polymeric insulators is analyzed. In the case of a specimen produced by varying the substrate temperature from $30^{\circ}C$ to $105^{\circ}C$, the product of mobility and the ion density decreased from $4.626{\times}10^8$ to $8.47{\times}10^7/V{\cdot}cm{\cdot}s$. This result suggests that the higher the substrate temperature is maintained, the better excluded the impurities are, and the more electrically stable material can be obtained.

• Animal Bioscience
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• v.37 no.2_spc
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• pp.396-403
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• 2024

Objective: Monofluoroacetate (MFA) is a potent toxin that blocks ATP production via the Krebs cycle and causes acute toxicity in ruminants consuming MFA-containing plants. The rumen bacterium, Cloacibacillus porcorum strain MFA1 belongs to the phylum Synergistota and can produce fluoride and acetate from MFA as the end-products of dehalorespiration. The aim of this study was to identify the genomic basis for the metabolism of MFA by this bacterium. Methods: A draft genome sequence for C. porcorum strain MFA1 was assembled and quantitative transcriptomic analysis was performed thus highlighting a candidate operon encoding four proteins that are responsible for the carbon-fluorine bond cleavage. Comparative genome analysis of this operon was undertaken with three other species of closely related Synergistota bacteria. Results: Two of the genes in this operon are related to the substrate-binding components of the glycine reductase protein B (GrdB) complex. Glycine shares a similar structure to MFA suggesting a role for these proteins in binding MFA. The remaining two genes in the operon, an antiporter family protein and an oxidoreductase belonging to the radical S-adenosyl methionine superfamily, are hypothesised to transport and activate the GrdB-like protein respectively. Similar operons were identified in a small number of other Synergistota bacteria including type strains of Cloacibacillus porcorum, C. evryensis, and Pyramidobacter piscolens, suggesting lateral transfer of the operon as these genera belong to separate families. We confirmed that all three species can degrade MFA, however, substrate degradation in P. piscolens was notably reduced compared to Cloacibacillus isolates possibly reflecting the loss of the oxidoreductase and antiporter in the P. piscolens operon. Conclusion: Identification of this unusual anaerobic fluoroacetate metabolism extends the known substrates for dehalorespiration and indicates the potential for substrate plasticity in amino acid-reducing enzymes to include xenobiotics.

• Korean Journal of Optics and Photonics
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• v.18 no.6
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• pp.452-460
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• 2007

Ultra-low loss ZERODUR and fused silica mirrors were manufactured and their light scattering characteristics were investigated. For this purpose, ZERODUR and fused silica substrates were super-polished by the bowl feed method. The surface roughness were 0.292 ${\AA}$ and 0.326 ${\AA}$ in rms for ZERODUR and fused silica, respectively. To obtain the high reflectivity, 22 thin film layers of $SiO_2$ and $Ta_2O_5$ were deposited by Ion Beam Sputtering. The measured light scattering of ZERODUR and fused silica mirror were 30.9 ppm and 4.6 ppm, respectively. This shows that the substrate surface roughness is not the only parameter which determines the light scattering of the mirror. In order to investigate the mechanism for additional light scattering of the ZERODUR mirror, the surface roughness of the mirror was measured by AFM and was found to be 2.3 times higher than that of the fused silica mirror. It is believed that there is some mismatch at the interface between the substrate and the first thin film layer which leads to the increased mirror surface roughness. To clarify this, the contact angle measurements were performed by SEO 300A, based on the Giriflaco-Good-Fowkes-Young method. The fused silica substrates with 0.46 ${\AA}$ in its physical surface roughness shows lower contact angle than that of the ZERODUR substrate with 0.31 ${\AA}$. This indicates that the thin film surface roughness is determined by not only its surface roughness but also the surface energy of the substrate, which depends on the chemical composition or crystalline orientation of the materials. The surface energy of each substrate was calculated from a contact angle measurement, and it shows that the higher the surface energy of the substrate, the better the surface roughness of the thin film.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.68.1-68.1
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• 2012

The best part of graphene is - charge-carriers in it are mass less particles which move in near relativistic speeds. Comparing to other materials, electrons in graphene travel much faster - at speeds of $10^8cm/s$. A graphene sheet is pure enough to ensure that electrons can travel a fair distance before colliding. Electronic devices few nanometers long that would be able to transmit charge at breath taking speeds for a fraction of power compared to present day CMOS transistors. Many researches try to check a possibility to make it a perfect replacement for silicon based devices. Graphene has shown high potential to be used as interconnects in the field of high frequency electrical devices. With all those advantages of graphene, we demonstrate characteristics of electrical and optical properties of graphene such as the effect of graphene geometry on the microwave properties using the measurements of S-parameter in range of 500 MHz - 40 GHz at room temperature condition. We confirm that impedance and resistance decrease with increasing the number of graphene layer and w/L ratio. This result shows proper geometry of graphene to be used as high frequency interconnects. This study also presents the optical properties of graphene oxide (GO), which were deposited in different substrate, or influenced by oxygen plasma, were confirmed using different characterization techniques. 4-6 layers of the polycrystalline GO layers, which were confirmed by High resolution transmission electron microscopy (HRTEM) and electron diffraction analysis, were shown short range order of crystallization by the substrate as well as interlayer effect with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups on its layers. X-ray photoelectron Spectroscopy (XPS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation, and Fourier Transform Infrared spectroscopy (FTIR) and XPS analysis shows the changes in oxygen functional groups with nature of substrate. Moreover, the photoluminescent (PL) peak emission wavelength varies with substrate and the broad energy level distribution produces excitation dependent PL emission in a broad wavelength ranging from 400 to 650 nm. The structural and optical properties of oxygen plasma treated GO films for possible optoelectronic applications were also investigated using various characterization techniques. HRTEM and electron diffraction analysis confirmed that the oxygen plasma treatment results short range order crystallization in GO films with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups. In addition, Electron energy loss spectroscopy (EELS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation and XPS analysis shows that epoxy pairs convert to more stable C=O and O-C=O groups with oxygen plasma treatment. The broad energy level distribution resulting from the broad size distribution of the $sp^2$ clusters produces excitation dependent PL emission in a broad wavelength range from 400 to 650 nm. Our results suggest that substrate influenced, or oxygen treatment GO has higher potential for future optoelectronic devices by its various optical properties and visible PL emission.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.3
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• pp.71-76
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• 2017

The electrical behavior and flexibility of the screen printed Ag circuits were investigated with infrared radiation sintering times and sintering temperatures. Electrical resistivity and radio frequency characteristics were evaluated by using the 4 point probe measurement and the network analyzer by using cascade's probe system, respectively. Electrical resistivity and radio frequency characteristics means that the direct current resistance and signal transmission properties of the printed Ag circuit. Flexibility of the screen printed Ag circuit was evaluated by measuring of electrical behavior during IPC sliding test. Failure mode of the Ag printed circuits was observed by using field emission scanning electron microscope and optical microscope. Electrical resistivity of the Ag circuits screen printed on Pl substrate was rapidly decreased with increasing sintering temperature and durations. The lowest electrical resistivity of Ag printed circuit was up to $3.8{\mu}{\Omega}{\cdot}cm$ at $250^{\circ}C$ for 45 min. The crack length arisen within the printed Ag circuit after $10{\times}10^4$ sliding numbers was 10 times longer than that of after $2.5{\times}10^4$ sliding numbers. Measured insertion loss and calculated insertion loss were in good agreements each other. Insertion loss of the printed Ag circuit was increased with increasing the number of sliding cycle.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.2 s.43
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• pp.41-47
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• 2007

Today lots of investigations on Embedded Passive Technology using materials and chip components have been carried out. We fabricated diplexers with 1005 sized-passives, which were made by burying chips in PCB substrate and surface mounting chip on PCB. 6 passive chips (inductors and capacitors) were used for the frequency divisions of $880\;MHz{\sim}960\;MHz(GSM)$ and $1.71\;GHz{\sim}1.88\;GHz(DCS)$. Two types of diplxer were characterized with Network analyzer. The chip buried diplexer showed extra 5db loss and a little deviation of 0.6GHz at aimed frequency areas, whereas the chip mounted diplexer showed man. 0.86dB loss within GSM field and max. 0.68dB within DCS field respectively. But few degradations were observed after $260^{\circ}C$ for 80min baking and $280^{\circ}C$ for 10sec solder floating.

• Journal of Sensor Science and Technology
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• v.11 no.3
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• pp.163-170
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• 2002

This paper proposes a $10\;{\mu}m$ thick oxide air-bridge structure which can be used as a substrate for RF circuits. The structure was fabricated by anodic reaction, complex oxidation and micromachining technology using TMAH etching. High quality films were obtained by combining low temperature thermal oxidation ($500^{\circ}C$, 1 hr at $H_2O/O_2$) and rapid thermal oxidation (RTO) process ($1050^{\circ}C$, 2 min). This structure is mechanically stable because of thick oxide layer up to $10\;{\mu}m$ and is expected to solve the problem of high dielectric loss of silicon substrate in RF region. The properties of the transmission line formed on the oxidized porous silicon (OPS) air-bridge were investigated and compared with those of the transmission line formed on the OPS layers. The insertion loss of coplanar waveguide (CPW) on OPS air-bridge was (about 2dB) lower than that of CPW on OPS layers. Also, the return loss of CPW on OPS air-bridge was less than about -20 dB at measured frequency region for 2.2 mm. Therefore, this technology is very promising for extending the use of CMOS circuitry to higher RF frequencies.