• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03b
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• pp.7-7
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• 2010

The SBN thin films were deposited at substrate temperature of 300[$^{\circ}C$] on Pt-coated electrode (Pt/Ti/$SiO_2$/Si(100)) using RF sputtering method. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature. The dielectric constant(150) of SBN thin film was obtained by annealing temperature above 750[$^{\circ}C$]. The frequency dependence of dielectric loss showed a value within 0.03 in frequency ranges of 1~1000[kHz].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.408-409
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• 2008

In this paper the power divider is realized using the IPD processes for 900/1800 MHz; the designed power divider achieved the isolation of more than -24 dB. the insertion loss of nearly -3.5 dB, and the return loss of about -25 dB. The simple dual-band power divider based on SI-GaAs substrate is realized within the die size of about $2.5\times2mm^2$.

• Proceedings of the IEEK Conference
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• 2001.06a
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• pp.401-404
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• 2001

We designed and fabricated symmetrical partially shorted MSAs for 850 MHz band on various Copper-clad Laminates substrates, where the width of the radiation patch is identical with that of the ground plane and the radiation patch is partially shorted to the ground plane. The resonant frequency, return loss and input impedance due to the permittivity(2.5, 3.5, 10.0) and thickness(0.76~1.57 mm, 6 types) were measured by reducing the PSW (Partially Shorted Width) to 0 mm. As a result, good characterized antennas with average 11% reduced resonant length and return loss 7.288~29.445 dB were obtained when the total PSW was in the range of 70% of radiated patch width, compared to the conventional λ/4 MSA.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1406-1407
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• 2008

In this paper, a micro balanced filter in magnetically coupled LC resonators is proposed, designed, simulated by using FR-4 PCB substrate for low cost, small volume IEEE 802. 11a wireless LAN application. Two pair of coupled LC resonators using magnetic coupling of embedded inductors are applied to obtain bandpass transmission response and improve their phase and magnitude imbalance characteristics. In addition, high dielectric composite film is applied to fabricate the high Q MIM capacitors with small size and high capacitance density. It has an insertion loss of 1.4 dB, a return loss of 10 dB, a phase imbalance of 0.25 degree, and magnitude imbalance of 0.17 dB at frequency bandwidth of 200 MHz ranged from 5.15 GHz to 5.35 GHz, respectively. The proposed balanced filter has a small volume of $1.1mm{\times}1.3mm{\times}0.6mm$ (height).

• Progress in Superconductivity
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• v.1 no.1
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• pp.42-46
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• 1999

A high-temperature superconducting 1.78 GHz bandpass filter, designed for PCS applications, is presented. The structure consists of microstrip pseudo-lumped elements, which enables miniaturization of the filter. A 5-pole microstrip filter could be realized on a 37 mm $\times$ 9 mm $LaAlO_3$ substrate, using double-sided high-temperature superconducting $YBa_2Cu_3O{7-\delta}$ thin film. This filter showed 0.7 % fractional bandwidth, 0.3 dB insertion loss, and 12 dB return loss in the passband at 60 K.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.436-440
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• 2003

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/ $O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz]. SCT thin films used in this study showed the phenomena of dielectric relaxation with the increase of frequency.ncy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1039-1044
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• 2002

Film Bulk Acoustic Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents an MMIC compatible suspended FBAR using SOI micromachining. It is possible to make a single crystal silicon membrane using a SOI wafer In fabricating active devices, SOI wafer offers advantage which removes the substrate loss. FBAR was made on the 12㎛ silicon membrane. Electrode and Piezoelectric materials were deposited by RF magnetron sputter. The maximum resonance frequency of FBAR was shown at 2.5GHz range. The reflection loss, K$^2$$\_$eff/, Q$\_$serise/ and Q$\_$parallel/ in that frequency were 1.5dB, 2.29%, 220 and 160, respectively.

• Journal of Electrical Engineering and Technology
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• v.13 no.2
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• pp.928-935
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• 2018

In this paper, a compact fully printable bandpass filter is suggested for a low-frequency channel 3.2 GHz ~ 3.7 GHz in the Ultra-Wideband (UWB) communication system. It is featured with a small geometry of $0.5{\lambda}_g/15$ and a low insertion loss despite using FR4 as a cheap substrate of a high dielectric loss. This is made possible by generating zeroth-order-resonance (ZOR) from one cell comprising two series resonances obviously separated from one shunt resonance as a third-order bandpass filter. Especially, the series resonance elements are combined with spur-lines bent by 90 degrees, which makes the port-impedance matched well and eliminates spurious hikes in the stopband, while the overall size remains almost unchanged. The design is carried out by setting up the equivalent circuit and the circuit simulation is checked by the full-wave EM analysis. The structure is manufactured and measured to show that the circuit modeling and EM simulation results agree with the measured data.

• Proceedings of the IEEK Conference
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• 2007.07a
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• pp.81-82
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• 2007

This paper presents a WLAN band active monopole antenna which is made of a CPW-fed monopole antenna and a low noise amplifier implemented on single-layer low-temperature co-fired ceramic (LTCC) substrate. Planar active antenna measure return loss and power test. (drain voltage = 4V, gate voltage = -0.6V). The bandwidth, is 540MHz, return loss is -38dB.

• Journal of Industrial Technology
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• v.31 no.A
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• pp.109-112
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• 2011

In this paper, we proposed a planar reversed triangle monopole antenna for UWB(Ultra Wideband) communication. RF-60A substrate of 0.64 mm thickness and 6.15 relative permitivity and 0.035 mm conductor of thickness and loss tangent 0.0025 is used for implementation. We have used Ansoft $HFSS^{TM}$(High Frequency Structure Simulator) to simulate the proposed antenna. The proposed antenna showed return losses about -10 dB, nearly omni-directional radiation patterns and maximum gains are over -5 dBi at the frequency band from 3.1 GHz to 10.6 GHz for ultra wide band communication.