• Title/Summary/Keyword: Substrate loss

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Characteristics of ITO Films Grown on an Oxygen Plasma Treated Glass Substrate (유리기판에 O2 플라즈마 표면처리 후 제작된 ITO 박막의 특성)

  • Chae, Hong-Chol;Hong, Joo-Wha
    • Korean Journal of Metals and Materials
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    • v.50 no.7
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    • pp.545-548
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    • 2012
  • The optical and electronic properties of Indium Tin Oxide (ITO) thin films deposited on a RF-plasma treated glass substrate were investigated by X-Ray Photoelectron Spectroscopy (XPS), Ultra-violet Photoelectron Spectroscopy (UPS), Reflected Electron Energy Loss Spectroscopy (REELS). The modification of glass substrates was carried out by varying the time of the plasma surface treatment in an oxygen atmosphere. The focus of this research was to examine how the optical and electronic properties of ITO thin films change with the plasma treatment time. The surface energy increased since the carbon bonds were removed from the surface after the glass substrate received the surface treatment. The ITO thin films produced on the glass substrate with surface treatment showed that the high optical transmittance was approximately 85%. The measured band gap energy was as high as 3.23 eV when the plasma treatment time was 60 s and the work function after the treatment was increased by 0.5 eV in comparison to that before the treatment of 60 s. The ITO thin film exhibited an excellent sheet resistance of $2.79{\Omega}/{\Box}$. We found that the optical and electronic properties of ITO thin films can be improved by RF-plasma surface treatment.

Measured Return Loss and Predicted Interference Level of PCB Integrated Filtering Antenna at Millimeter-Wave

  • Lee Jae-Wook;Kim Bong-Soo;Song Myung-Sun
    • Journal of electromagnetic engineering and science
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    • v.5 no.3
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    • pp.140-145
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    • 2005
  • In this paper, an experimental investigation for return loss and a software-based prediction for interference level of single-packaged filtering antenna composed of dielectric waveguide filter and PCB(Printed Circuit Board) slot antenna in transceiver module have been carried out with several different feeding structures in millimeter-wave regime. The implementation and embedding method of the existing air-filled waveguide filters working at millimeter-wave frequency on general PCB substrate have been described. In a view of the implementation of each components, the dielectric waveguide embedded in PCB and LTCC(Low Temparature Co-fired Ceramic) substrates has employed the via fences as a replacement with side walls and common ground plane to prevent energy leakage. The characteristics of several prototypes of filtering antenna embedded in PCB substrate are considered by comparing the wideband and transmission characteristics as a function of bent angle of transmission line connecting two components. In addition, as an essential to the packaging of transceiver module working at millimeter-wave, miniaturization technology maintaining the performances of independent components and the important problems caused by integrating and connecting the different components in different layers are described in this paper.

Design of a 94-GHz Single Balanced Mixer Using Planar Schottky Diodes with a Nano-Dot Structure on a GaAs Substrate

  • Uhm, Won-Young;Ryu, Keun-Kwan;Kim, Sung-Chan
    • Journal of information and communication convergence engineering
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    • v.14 no.1
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    • pp.35-39
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    • 2016
  • In this paper, we develop a 94-GHz single balanced mixer with low conversion loss using planar Schottky diodes on a GaAs substrate. The GaAs Schottky diode has a nanoscale anode with a T-shaped disk that can yield high cutoff frequency characteristics. The fabricated Schottky diode with an anode diameter of 500 nm has a series resistance of 21 Ω, an ideality factor of 1.32, a junction capacitance of 8.03 fF, and a cutoff frequency of 944 GHz. Based on this technology, a 94-GHz single balanced mixer was constructed. The fabricated mixer shows an average conversion loss of -7.58 dB at an RF frequency of 92.5 GHz to 95 GHz and an IF frequency of 500 MHz with an LO power of 7 dBm. The RF-to-LO isolation characteristics were greater than -32 dB. These values are considered to be attributed to superior Schottky diode characteristics.

An Numerical Study on the Flow Uniformity and Pressure Drop in Dual Monolith Catalytic Converter during the Rapid Acceleration/Deceleration Driving (급가감속 운전에 따른 듀얼 모노리스형 촉매변환기 내의 유동 균일도와 압력 강하에 관한 수치적 연구)

  • Kim, Young-Deuk;Jeong, Soo-Jin;Kim, Woo-Seung
    • Transactions of the Korean Society of Automotive Engineers
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    • v.15 no.5
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    • pp.63-71
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    • 2007
  • The conversion efficiency, durability and pressure drop of the automotive exhaust catalysts are dependent on the flow distribution within the substrate. Conventional porous medium approaches assuming monolith resistance based on the one-dimensional laminar flow for simulating the flow through the automotive exhaust catalysts over-predict the flow uniformity in the monolith. In this study, additional pressure loss is also considered by accounting for entrance effects due to the oblique flow incident on the front face of monolith as a consequence of flow separation and recirculation within the diffuser. The incorporation of an additional pressure loss improves the predictions for the maximum flow velocity within the substrate. An numerical study has also been conducted for the three-dimensional unsteady incompressible non-reacting flow inside various dual-monolith catalytic converters for the rapid acceleration/deceleration driving.

SAW Filter Fabrication and its Power Durability (SAW Filter 제작과 전력 내구성 검토)

  • 김동수;강성건;김흥락;김광일;남효덕;이만형
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.11a
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    • pp.109-112
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    • 1998
  • SAW filters of transversal type were fabricated on some piezoelectric substrate of the LN 128 $^{\circ}$ Y-X waters through the simulation in which the number of IDT and window function were changed for the required frequency, and the mask making. Their IDT spacing and width were 1.63$\mu\textrm{m}$, 1.239$\mu\textrm{m}$, respectively. Titanium thin films having different thicknesses were introduced between the Al electrode and the substrate for improving the power resistance strength due to its high temperature durability and good adhesion characteristics. All of specimens showed similar insertion loss results, which means the possibility of introducing the Ti layer though it is known to have a higher resistivity leading to a worse insertion loss result. Ti inserted specimens had a better power durability than that of pure Al electrode though their thickness had no effect on the performance.

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A Study on the ZnO Piezoelectric Thin Film SAW Filter for High Frequency (ZnO 압전 박막을 이용한 고주파 SAW 필터 연구)

  • 박용욱;신현용
    • Journal of the Korean Ceramic Society
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    • v.40 no.6
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    • pp.547-552
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    • 2003
  • ZnO thin films on glass substrate were deposited by RF magnetron reactive sputtering at 100 W, 1.33 Pa, Ar/O2=50 : 50, 200$^{\circ}C$, and a target/substrate distance of 4 cm. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, SEM, AFM, RBS, and electrometer. All films showed a strong preferred c-axis orientation and the chemical stoichiometry. The propagation velocity of ZnO/IDT/glass of single electrode and double electrode types SAW filter was about 2,589 m/sec, 2,533 m/sec and insertion loss was a minimum value of about -11 dB and -21 dB, respectively.

Fabrication and Dielectric Properties of $(Sr_{1-x}Ca_x)TiO_3$ thin film by RF Magnetron Sputtering Method (RF 마그네트론 스퍼터링법에 의한 $(Sr_{1-x}Ca_x)TiO_3$ 박막의 제조 및 유전특성)

  • Kim, J.S.;Paek, B.H.;Jang, W.S.;Kim, C.H.;Choi, W.S.;Yoo, Y.K.;Kim, Y.J.;Lee, J.U.
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1456-1458
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    • 1998
  • The $(Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films were deposited at various substrate temperature using rf magnetron sputtering method on optimized Pt-coated electrodes ($Pt/TiN/SiO_2/Si$). The dielectric constant changes almost linearly in the temperature region of $-80{\sim}+90[^{\circ}C]$, the temperature characteristics of the dielectric loss exhibited a stable value within 0.1. The capacitance characteristics appears a stable value within ${\pm}5$[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz]. Dielectric constant of SCT thin films deposited on Si wafer substrate are larger with the increase of deposition temperature.

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Experimental Studies of Wrinkle Formation in the UV Cured Coating Around Film-Substrate Insterface (자외선 경화코팅 필름-기질 계면에서의 주름현상에 대한 연구)

  • Hong, Jin Hu;Lee, Haeng U
    • Journal of the Korean Chemical Society
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    • v.38 no.7
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    • pp.480-484
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    • 1994
  • The durability of UV radiation cured coatings near the film-substrate interface has been studied. Particularly, the influence of the reactive diluent and oligomer in the UV-cured urethane acrylate formulation on the wrinkle formation of coating films was investigated. Results showed that wrinkle resistance increases when DMTA loss peaks of coating network are broad and has shoulder. When modified aromatic urethane acrylate oligomer is used to replace the aliphatic one, resulting cured network provides coating film of high hardness and flexibility. Therefore, the high values of loss modulus as low temperature are considered to be the main reason for wrinkle resistance improvements. The SEM and instron data support above conclusion.

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An Ultra Wideband, Novel and Reliable RF MEMS Switch

  • Jha, Mayuri;Gogna, Rahul;Gaba, Gurjot Singh;Miglani, Rajan
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.4
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    • pp.183-188
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    • 2016
  • This paper presents the design and characterization of wide band ohmic microswitch with an actuation voltage as low as 20~25 V, and a restoring force of 14.1 μN. The design of the proposed switch is primarily composed of an electrostatic actuator, bridge membrane, cantilever (beam) and coplanar waveguide, suspended over the substrate. The analysis shows an insertion loss of −0.002 dB at 1GHz and remains as low as −0.35 dB, even at 100 GHz. The isolation loss of the switch is sustained at −21.09 dB at 100GHz, with a peak value of −99.58 dB at 1 GHz and up-state capacitance of 4 fF. To our knowledge, this is the first demonstration of a series contact switch, which works over a wide bandwidth (DC-100 GHz) and with such a high and sustained isolation, even at high frequencies and with an excellent figure of merit (fc=1/2.pi.Ron.Cu= 39.7 THz).

Solid Particle Erosion Properties of Hot-Dip Aluminized Economizer Steel Tube (용융 알루미늄 도금된 절탄기 강재 튜브의 고상입자 침식 특성)

  • Park, Il-Cho;Han, Min-Su
    • Corrosion Science and Technology
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    • v.20 no.6
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    • pp.384-390
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    • 2021
  • In this paper, durability evaluation and surface damage mechanism were investigated through solid particle erosion (SPE) test after applying hot-dip aluminizing (HDA) technology for the purpose of maintenance of marine economizer tube. Damaged surface shape was analyzed using SEM and 3D microscope. Compositional changes and microstructure of the HDA layer were analyzed through EDS and XRD. Durability was evaluated by analyzing weight loss and surface damage depth after SPE. HDA was confirmed to have a two-layer structure of Al and Al5Fe2. HDA+HT was made into a single alloy layer of Al5Fe2 by diffusion treatment. In the microstructure of HDA+HT, void and crack defect were induced during the crystal phase transformation process. The SPE damage mechanism depends on material properties. Plastic deformation occurred in the substrate and HDA due to ductility, whereas weight loss due to brittleness occurred significantly in HDA+HT. As a result, the substrate and HDA showed better SPE resistance than HDA+HT.