• Title/Summary/Keyword: Substrate loss

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SoP-L 공정을 이용한 DPDT 스위치를 임베딩 할 경우 스위치 특성에 영향을 주는 Via의 loss 분석 (Analysis of Via Loss Characteristic in Embedded DPDT Switch Using SoP-L Fabrication)

  • 문종원;권은진;류종인;박세훈;김준철
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2008년도 하계종합학술대회
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    • pp.557-558
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    • 2008
  • This paper presents the effects of via losses to be connected with an embedded DPDT(Double Pole Double Thru) in a substrate. The substrate consists of two ABF(Ajinomoto Bonding Film) and a Epoxy core. In order to verify and test effects of via, via chains in a substrate using SoP-L process are proposed and measured. Via loss can be calculated as averaging the total via holes. The exact loss of a DPDT switch embedded in substrate are extracted by using the results of via chain and measured data from embedded DPDT. The calculated one via insertion loss is about 0.0005 dB on basis of measured via chains. This result confirms very low loss in via. So the inserti on loss of the embedded switch is confirmed only switch loss as loss is 0.4 dB.

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Material Properties Characterization Based on Measurements of Reflection Coefficient and Bandwidth

  • Nguyen, Phuong Minh;Chung, Jae-Young
    • Journal of electromagnetic engineering and science
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    • 제14권4호
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    • pp.382-386
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    • 2014
  • The knowledge of substrate material properties is important in antenna design. We present a technique to accurately characterize the dielectric constant and loss tangent of an antenna substrate based on the measurements of antenna's reflection coefficient and bandwidth. In this technique, an error function is formulated by combinations of the reflection coefficient and bandwidth of measured and simulated data, and then an optimization technique is used to efficiently search for the substrate properties that minimize the error function. The results show that the method is effective in retrieving the dielectric constant and loss tangent of the antenna substrate without the need of additional test fixtures as in conventional substrate characterization methods.

The Effects of Substrate, Metal-line, and Surface Material on the Performance of RFID Tag Antenna

  • Cho, Chi-Hyun;Choo, Ho-Sung;Park, Ik-Mo
    • Journal of electromagnetic engineering and science
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    • 제7권1호
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    • pp.47-52
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    • 2007
  • We investigated the effects of substrate, metal-line, and surface material on the performance of radio frequency identification(RFID) tag antenna using a tag antenna with a meander line radiator and T-matching network. The results showed that readability of the tag antenna with a thin high-loss substrate could be increased so that it was similar to that of a low-loss substrate if the substrate was very thin. The readability of the tag antenna decreased significantly when the metal line was thinner than the skin depth. The readability of the tag also decreased drastically when the tag was attached to high-permittivity high-loss target objects.

손실 기판을 이용한 금속 부착형 RFID 태그 안테나의 복사 효율 향상 (Radiation Efficiency Improvement of RFID Tag Antenna for Metallic Objects Printed on Lossy Substrate)

  • 손해원;최원규;최길영
    • 한국전자파학회논문지
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    • 제19권11호
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    • pp.1265-1271
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    • 2008
  • 본 논문에서는 FR4와 같은 저가의 고손실 기판을 이용하여 금속 부착형 태그 안테나를 설계하는 새로운 방법을 제안한다. 제안한 설계 방법은 유전 손실(dielectric loss)에 따른 기판 손실(substrate loss)을 크게 감소시킴으로써, 태그 안테나의 복사 효율(radiation efficiency)을 기존의 평면 역 F 안테나(planar inverted-F antenna: PIFA)에 비하여 2배 이상 향상시킨다. 본 논문에서는 제안한 방법에 따른 안테나의 등가 회로 모델을 정립하고 이를 체계적으로 분석하였으며, 시제품을 제작 및 측정하여 제안한 방법의 우수성을 입증하였다.

도전성이 높은 안정화층을 고려한 YBCO 선재의 전송전류 손실 해석 (Analysis of transport current loss considering the conductive layer of YBCO wires)

  • 강명훈;한병욱;정두영;임희현;임형우;차귀수;이희준
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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    • pp.191-193
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    • 2006
  • YBCO wire has a metal substrate to improve the texture structure and highly conductive layers to increase the cryogenic stability. When AC current flows in the YBCO wire, magnetic field which is generated by the AC current magnetizes the metal substrate and induces the eddy current in the stabilizing layer. To examine the effect of the metal substrate and the conducting layer on the transport current loss of YBCO wire, this paper presents the transport current loss of YBCO wire which has metal substrate and conductive layer. YBCO wire with Ni-W substrate and copper layer were chosen as the model HTS wire for numerical calculation. Finite element method has been used to calculate the transport loss and the results of numerical calculation was compared with analytic calculation suggested by Norris.

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기판의 유전율 및 전기적 두께가 X-벤드용 마이크로스트립 패치 안테나의 특성에 미치는 영향에 관한 연구 (A study of characteristics of X-band microstrip patch antenna affected b permittivity and electrical thickness of the substrate)

  • 박성교;김준현;박종배
    • 전자공학회논문지A
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    • 제33A권3호
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    • pp.65-81
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    • 1996
  • In this study forty-five X-bnd rectangular microstrip patch antennas fed by microstrip line using ${\lambda}$/4 transformer were fabricated on teflon substrates with low high permittivities and varous thickness (substrate thickness : 0.6 ~ 2.4 mm, permittivities : 2.15 ~ 10.0), and effects of permittivity and electrical thickness on antenna characteristics were studied with measured return loss (1/S$_{11}$) and resonant frequencies. When substrate electrical thickness was greater than 0.060 ${\lambda}_{0}$return loss was very good and genrally more than 20 dB, but resonance characteristics was somewhat unstable. The more than 0.088 ${\lambda}_{0}$ the thickness was, the more unstable it was. As a result, in the rest range except 12, 13 GHz we had very good mesured return loss iwth greater than 20 dB, and in the range 7 to 9 GHz resonant frequencies were within $\pm$2 % error, on ${\epsilon}_{r}$=5.0, height = 2.4 mm substrate.

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A New Broadband Microstrip-to-SIW Transition Using Parallel HMSIW

  • Cho, Dae-Keun;Lee, Hai-Young
    • Journal of electromagnetic engineering and science
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    • 제12권2호
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    • pp.171-175
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    • 2012
  • In this work, a new microstrip-to-substrate integrated waveguide (SIW) transition using the parallel half-mode substrate integrated waveguide (HMSIW) is proposed. The proposed transition consists of three sections : a microstrip, parallel HMSIWs, and an SIW. By inserting the parallel HMSIWs section between the microstrip section and the SIW section, the proposed transition can improve the return loss characteristics of the near cut-off frequency because the HMSIWs section has a lower cut-off frequency than the SIW section (8.6 GHz). The lower cut-off frequency is achieved through gradual electromagnetic field mode changes for a low reflection. The measured return loss is less than 20 dB in the of 9.1~16.28 GHz freqeuncy range for the back-to-back transition. The measured insertion loss is within 1.6 dB for the back-to-back transition. The proposed transition is expected to play an important role in wideband SIW circuits fed by a microstrip.

밀리미터파 대역에서 액정 폴리머(Liquid Crystal Polymer) 기판을 이용한 대역통과필터 비교 (Comparison of Band Pass Filter Performance Using Liquid Crystal Polymer Substrate in Millimeter-Wave Band)

  • 오연정;이재영;최세환
    • 마이크로전자및패키징학회지
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    • 제28권2호
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    • pp.39-44
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    • 2021
  • 본 논문에서는 밀리미터파 대역에서 헤어핀 타입과 인터디지털 타입 두 종류의 대역통과필터(BPF)를 LCP(Liquid Crystal Polymer)와 PTFE(Polytetrafluoroethylene) 두 종류의 기판을 이용하여 설계 하고 성능을 비교하였다. 제안된 BPF의 통과 대역은 26.5 GHz~27.3 GHz 대역이며, 필터의 차수는 3차로 선택하였다. 제안된 BPF의 성능 비교는 기판 종류와 타입에 따른 대역폭(Bandwidth)과 통과 대역 내 삽입손실(Insertion Loss)과 평탄도(in-band Flatness) 등을 비교하였다. S21이 -3 dB가 되는 대역폭을 비교하였을 때 제안된 4 개의 BPF 중 PTFE 기판에 설계된 인터디지털 타입이 7.8 GHz로 가장 넓게 설계되었으며, LCP 기판에 설계된 헤어핀 타입 BPF가 4.2 GHz로 가장 협소한 대역폭을 가지는 것으로 나타났다. 통과 대역 내 삽입손실은 PTFE 기판에 설계된 헤어핀 타입 BPF가 -0.667 dB 이상으로 가장 우수하고 LCP 기판에 설계된 헤어핀 타입 BPF가 -0.937 dB 이상으로 가장 낮았으나, 0.27 dB의 근소한 차이임을 확인했다. 통과 대역 내 평탄도의 경우 PTFE 기판에 설계된 인터디지털 타입 BPF가 0.017 dB로 가장 우수하였고, LCP 기판에 제작된 헤어핀 타입이 0.07 dB로 가장 낮았으나 0.053 dB의 근소한 차이였다. 따라서, 밀리미터파 대역에서 LCP 기판을 이용한 대역통과 필터는 PTFE 기판을 이용한 대역통과필터와 비슷한 성능을 도출할 수 있을 것으로 사료된다.

FR-4 composite 기판을 이용한 microstrip 전송선의 광대역 전송 특성 해석 (Wideband propagation characteristics analysis of a microstrip transmission line on FR-4 composite substrate)

  • 홍정기;김영국;이해영
    • 전자공학회논문지A
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    • 제33A권2호
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    • pp.69-77
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    • 1996
  • We analyzed wideband propagation characteristics of a microstrip transmission line based on FR-4 composite substrate using the wideband complex dielectric constant model and the phenomenological loss equivalence method. The loss calculated by constant relative permittivity and loss tangent is greatly overestimatd compared to that calculated by the frequency-dependent complex relative permittivity. This wideband analysis can be helpful to characterize high-speed and high-density transmission lines associated with the wideband dielectric characteristics and shows that the FR-4 composite substrate has high potential of high frequency circuit applications in terms o fthe propagation loss.

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High Performance RF Passive Integration on a Si Smart Substrate for Wireless Applications

  • Kim, Dong-Wook;Jeong, In-Ho;Lee, Jung-Soo;Kwon, Young-Se
    • ETRI Journal
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    • 제25권2호
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    • pp.65-72
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    • 2003
  • To achieve cost and size reductions, we developed a low cost manufacturing technology for RF substrates and a high performance passive process technology for RF integrated passive devices (IPDs). The fabricated substrate is a conventional 6" Si wafer with a 25${\mu}m$ thick $SiO_2$ surface. This substrate showed a very good insertion loss of 0.03 dB/mm at 4 GHz, including the conductive metal loss, with a 50 ${\Omega}$ coplanar transmission line (W=50${\mu}m$, G=20${\mu}m$). Using benzo cyclo butene (BCB) interlayers and a 10 ${\mu}m$ Cu plating process, we made high Q rectangular and circular spiral inductors on Si that had record maximum quality factors of more than 100. The fabricated inductor library showed a maximum quality factor range of 30-120, depending on geometrical parameters and inductance values of 0.35-35 nH. We also fabricated small RF IPDs on a thick oxide Si substrate for use in handheld phone applications, such as antenna switch modules or front end modules, and high-speed wireless LAN applications. The chip sizes of the wafer-level-packaged RF IPDs and wire-bondable RF IPDs were 1.0-1.5$mm^2$ and 0.8-1.0$mm^2$, respectively. They showed very good insertion loss and RF performances. These substrate and passive process technologies will be widely utilized in hand-held RF modules and systems requiring low cost solutions and strict volumetric efficiencies.

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