• Transactions of the Society of Information Storage Systems
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• v.2 no.2
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• pp.100-104
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• 2006

Stamper surface temperature is very critical in replicating the high density optical disc substrates using injection molding as the pit or land/groove patterns on the optical disc substrate have decreased due to the rapid increase of areal density. During the filling stage, the polymer melt in the vicinity of the stamper surfaces rapidly solidifies and the solidified layer generated during polymer filling greatly deteriorates transcribability and fluidity of polymer melt. To improve transcribability and fluidity of polymer melt, stamper surface temperature should be controlled such that the growth of the solidified layer is delayed during the filling stage. In this study, the effect of heating on replication process was simulated numerically. Then, an injection mold equipped with instant active heating system was designed and constructed to raise the stamper surface temperature over the glass transition temperature during filling stage of the injection molding. Also, the closed loop controller using the Kalman filter and the linear quadratic Gaussian regulator was designed. As a result. the stamper surface temperature was controlled according to the desired reference stamper surface temperature.

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.404-408
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• 1999

Gallium doped zinc oxide(GZO) films were deposited on soda-lime glass substrates without substrate heating $(T_s<50^{\circ}C$) by dc planar magnetron sputtering using GZO ceramic oxide targe with different inert gas (Ar, or Ne). For the GZO films deposited under different total gas pressure $(P_{tot})$, structural and electrical properties were investigated by XRD and Hall effect measurements. Crystallinity of GZO films deposited using Ar was degraded with increase in $(P_{tot})$, suggesting that it was heavily affected by kinetic energy of sputtered Zn particles$(PA_{zn})$ arriving at substrate surface. Whereas, crystallinity of GZO films deposited at lower Ptot than 3.0 Pa using Ne gas was degraded with decrease in $(P_{tot})$. This degradation was considered to be result of film damage caused by the bombardment of high-energy neutrals ($Ne^{\circ}$). On the basis of a hard sphere collision processes, the average final energy of particles (sputtered Zn, $Ar^{\circ}$and $Ne^{\circ}$)arriving at substrate surface were estimated.

• Journal of the Korean institute of surface engineering
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• v.32 no.4
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• pp.496-502
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• 1999

Electroplating of Ag and Au on the functional area of lead frames are required for good bonding ability in IC packaging. As the patterns of the lead frame become finer, development of new deposition technology has been required for solving problems associated with process control for uniform thickness on selected area. Sputtering was employed to investigate the adhesion between substrate Alloy42 and Ag film as a new candidate process alternative to conventional electroplating. Coating thickness of Ag film was controlled to 3.5$\mu\textrm{m}$ at room temperature as a reference. The deposition of film was optimized to ensure the adhesion by process parameters of substrate heating temperature at $100~300^{\circ}C$, sputter etching time at -300V for 10~30min, bias voltage of -100~-500V, and existence of Cr interlayer film of $500\AA$. The critical $load L_{c}$ /, defined as the minimum load at which initial damage occurs, was the highest up to 29N at bias voltage of -500V by scratch test. AFM surface image and AES depth profile were investigated to analyze the interface. The effect of bias voltage in sputtering was to improve the surface roughness and remove the oxide on Alloy42.

• Food Science of Animal Resources
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• v.36 no.5
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• pp.671-678
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• 2016

Fractioning and/or preheating treatment on the rheological properties of myofibrillar protein (MP) gels induced by microbial transglutaminase (MTG) has been reported that they may improve the functional properties. However, the optimum condition was varied depending on the experimental factors. This study was to evaluate the effect of red bean protein isolate (RBPI) on the rheological properties of MP gels mediated by MTG as affected by modifications (fractioning: 7S-globulin of RBPI and/or preheat treatment (pre-heating; 95℃/30 min): pre-heating RBPI or pre-heating/7S-globulin). Cooking yields (CY, %) of MP gels was increased with RBPI (p<0.05), while 7S-globulin decreased the effect of RBPI (p<0.05); however, preheating treatments did not affect the CY (p>0.05). Gel strength of MP was decreased when RBPI or 7S-globulin added, while preheat treatments compensated for the negative effects of those in MP. This effect was entirely reversed by MTG treatment. Although the major band of RBPI disappeared, the preheated 7S globulin band was remained. In scanning electron microscopic (SEM) technique, the appearance of more cross-linked structures were observed when RBPI was prepared with preheating at 95℃ to improve the protein-protein interaction during gel setting of MP mixtures. Thus, the effects of RBPI and 7S-globulin as a substrate, and water and meat binder for MTG-mediated MP gels were confirmed to improve the rheological properties. However, preheat treatment of RBPI should be optimized.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1260-1261
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• 2008

Aluminium doped zinc oxide (ZnO:Al) thin film has emerged as one of the most promising transparent conducting electrode in flat panel displays(FPD) and in photovoltaic devices since it is inexpensive, mechanically stable, and highly resistant to deoxidation. In this paper ZnO:Al thin film was deposited on the polyethylene terephthalate(PET) substrate by the capacitively coupled r.f. magnetron sputtering method. Wide ranges of bias voltage, -30V${\sim}$45V, was applied to the growing films as an additional energy instead of substrate heating, and the effect of positive and negative bias on the film structure and electrical properties of ZnO:Al films was studied and discussed. The results showed that a bias applied to the substrate during sputtering contributed to the improvement of electrical properties of the film by attracting ions and electrons in the plasma to bombard the growing films. These bombardments provided additional energy to the growing ZnO film on the substrate, resulting in significant variations in film structure and electrical properties. The film deposited on the PET substrate at r. f. discharge power of 200 W showed the minimum resistivity of about $2.4{\times}10^{-3}{\Omega}-cm$ and a transmittance of about 87%.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.3
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• pp.140-143
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• 2011

In this work, Ga doped ZnO (GZO) films were prepared by radio frequency (RF) magnetron sputtering without intentional substrate heating on glass substrate and then the effect of the intense electron irradiation on structural and electrical properties and the NOx gas sensitivity were investigated. Although as deposited GZO films showed a diffraction peak for ZnO (002) in the XRD pattern, GZO films that electron irradiated at electron energy of 900 eV showed the higher intense diffraction peaks than that of the as deposited GZO films. The electrical property of the films are also influenced with electron's energy. As deposited GZO films showed the three times higher resistivity than that of the films irradiated at 900 eV In addition, the sensitivity for NOx gas is also increased with electron irradiation energy and the film sensor showed the proportionally increased gas sensitivity with NOx concentration. This approach is promising in gaining improvement in the performance of thin film gas sensors used for the detection of hazard gas phase.

• Journal of Power System Engineering
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• v.3 no.4
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• pp.57-62
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• 1999

The microaccelerometer using a tunnelling current effect concept has the potential of high performance, although it requires slightly complex signal-processing circuit for servo-system. The paddle of micro accelerometer is pulled to have the gap width of about 2nm which almost allows the flow tunnelling current. This paper demonstrates at capacitor of microaccelerometer the use of the coupled thermo-electric analysis for voltage, current, heat flux and Joule heating then tunnelling current flows. Two electrodes are applied to the microaccelerometer producing a unform difference of temperature gradient and electric potential between the paddle and the substrate.

• Journal of the Korean institute of surface engineering
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• v.52 no.6
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• pp.289-292
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• 2019

Transparent and conducting titanium doped indium oxide (TIO) thin films were deposited by RF magnetron sputtering on zinc oxide (ZnO)-coated glass substrates to investigate the effect of the ZnO buffer layer on optical and electrical properties of TIO/ZnO bi-layered films. TIO 90 nm / ZnO 10 nm films having a lower resistivity (3.09×10^-3 Ωcm) and a higher visible transmittance (80.3%) than other TIO/ZnO films were prepared in this study. Figure of merit results indicate that a 10 nm thick ZnO thin film is an effective buffer layer that enhances optical transmittance and electrical conductivity of TIO films without intentional substrate heating or post-deposition annealing.

• Preventive Nutrition and Food Science
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• v.10 no.1
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• pp.6-10
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• 2005

The trypsin inhibitor activity (TIA) of various soybean cultivars was evaluated by measuring the inhibition of trypsin activity using N-benzoyl-DL-arginine-p-nitro-anilide (BAPNA) as the substrate. The TIA values of eleven white shelled soybean cultivars including a glyphosate-tolerant soybean (16.58 to 17.90㎎/g) were not significantly different among cultivars. Black shelled soybeans had higher TIA values, ranging from 40.09 to 52.11㎎/g, compared to white shelled soybeans (p<0.05). When the TIA of commercially processed soybean foods were determined, no TIA was detected in soysauce, tofu and soybean paste. During conventional moist heating, the IT/sub 50/ (Time required to reach 50% inhibition of TIA) values were decreased as heating temperature and cooking pressure increased. The IT/sub 50/ values of moist heating were estimated to be 91.68, 37.71 and 19.50 min at 60, 80 and 100℃, respectively. The IT/sub 50/ value of microwave cooking was 4.75 min at medium heat, while that of the pressure cooking at 120℃ was only 2.62min. Moreover, there was a negative relationship between temperature and IT/sub 50/ values (R=0.92, p<0.01). The TIA of soybean sprouts was completely inactivated after heating at 100℃ for 5 min, although fresh soybean sprouts showed one fifth of the TIA value of white shelled soybeans. Based on our results, pressure cooking is the most effective cooking method to reduce TIA in soybeans.

• Vacuum Magazine
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• v.3 no.1
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• pp.16-21
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• 2016

FinFETs are able to be scaled down to 22 nm and beyond while suppressing effectively short channel effect, and have superior performance compared to 2-dimensional (2-D) MOSFETs. Bulk FinFETs are built on bulk Si wafers which have less defect density and lower cost than SOI(Silicon-On-Insulator) wafers. In contrast to SOI FinFETs, bulk FinFETs have no floating body effect and better heat transfer rate to the substrate while keeping nearly the same scalability. The bulk FinFET has been developed at 14 nm technology node, and applied in mass production of AP and CPU since 2015. In the development of the bulk FinFETs at 10 nm and beyond, self-heating effects (SHE) is becoming important. Accurate control of device geometry and threshold voltage between devices is also important. The random telegraph noise (RTN) would be problematic in scaled FinFET which has narrow fin width and small fin height.