• 한국표면공학회지
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• 제29권5호
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• pp.393-398
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• 1996

Soft magnetic properties and microstructural evolution of FeTaNC films were investigated, and compared with FeTaN and FeTaC films. Effects of substrate species (glass vs. $CaTiO_3$) on the magnetic properties were also investigated. Co-addition of N and C significantly enhance the grain refinments and magnetism, compared with N or C addition only. Good soft magnetic characteristics of coercivity of 0.17 Oe, permeability of 4000 (5MHz), and saturation flux density of 17 kG can be obtained in the FeTaNC in the relatively wide process windows. While these values appears to be similar to those of FeTaN on glass substrate, most distinctive difference between FeTaNC and FeTaN(or C) is in the effects of substrate. Whereas FeTaNC films show good magnetic characteristics for both glass and $CaTiO_3$ substrates, FeTaN(or C) films show significant degradation on the $CaTiO_3$ substrate.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.210-210
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• 2000

Vertically well aligned multi-wall carbon nanotubes (CNT) were grown on nickel coated glass substrates by plasma enhanced hot filament chemical vapor deposition at low temperatures below 600$^{\circ}C$. Acetylene and ammonia gas were used as the carbon source and a catalyst. Effects of growth parameters such as pre-treatment of substrate, plasma intensity, filament current, imput gas flow rate, gas composition, substrate temperature and different substrates on the growth characteristics of CNT were systematically investigated. Figure 1 shows SEM image of CNT grown on Ni coated glass substrate. Diameter of nanotube was 30 to 100nm depending on the growth condition. The diameter of CNT decreased and density of CNT increased as NH3 etching time etching time increased. Plasma intensity was found to be the most critical parameter to determine the growth of CNT. CNT was not grown at the plasma intensity lower than 500V. Growth of CNT without filament current was observed. Raman spectroscopy showed the C-C tangential stretching mode at 1592 cm1 as well as D line at 1366 cm-1. From the microanalysis using HRTEM, nickel cap was observed on the top of the grown CNT and very thin carbon amorphous layer of 5nm was found on the nickel cap. Current-voltage characteristics using STM showed about 34nA of current at the applied voltage of 1 volt. Electron emission from the vertically well aligned CNT was obtained using phosphor anode with onset electric field of 1.5C/um.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2001년도 The IMAPS-Korea Workshop 2001 Emerging Technology on packaging
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• pp.119-126
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• 2001

Chip-on-glass(COG) mounting of area array electronic packages was attempted by heating the rear surface of a contact pad film deposited on a glass substrate. The pads consisted of an adhesion(i.e. Cr or Ti) and a top coating layer(i.e. Ni or Cu) was heated by an UV laser beam transmitted through the glass substrate. The laser energy absorbed on the pad raised the temperature of a solder ball which is in physical contact with the pad, forming a reflowed solder bump. The effects of the adhesion and top coating layer on the laser reflow soldering were studied by measuring temperature profile of the ball during the laser heating process. The results were discussed based on the measurement of reflectivity of the adhesion layer. In addition, the microstructures of solder bumps and their mechanical properties were examined.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.594-594
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• 2012

Al doped ZnO (AZO) thin films were deposited on textured glass substrate by magnetron sputtering method. Also, AZO films on textured glass were etched by hydrochloric acid (HCl). Average thickness of etched AZO films are 90 nm. We observed morphology of AZO film by AFM with various etchant concentration and etching time. Etched AZO films have low resistivity and high haze. The surface RMS roughness of AZO film was increased from 53.8 nm to 84.5 nm. The haze ratio was also enhanced in above 700 nm of wavelength due to light trapping effect was increased by rough AZO surface. The etched AZO films on textured glass are applicable to fabricate solar cell.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.65-66
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• 2000

Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for crystalline Si film growth. The XRD analysis on $CaF_2/glass$ illustrated (220) preferential orientation and showed lattice mismatch less than 5 % with Si. We achieved a fluoride film with breakdown electric field of 1.27 MV/cm, leakage current density about $10^{-6}$ $A/cm^2$, and relative dielectric constant less than 5.6. This paper demonstrates microcrystalline silicon $({\mu}c-Si)$ film growth by using a $CaF_2/glass$ substrate. The ${\mu}c-Si$ films exhibited crystallization in (111) and (220) planes, grain size of $700\;{\AA}$, crystalline volume fraction over 65 %, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than $4{\times}10^{-7}$ S/cm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.405-406
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• 2008

The amorphous indium zinc oxide (IZO) thin films were deposited on polyethersulfone (PES) and glass substrates by facing targets sputtering. IZO thin films deposited as functions of gas flow ratio on PES and glass substrates, respectively. The electrical, optical and structural properties of IZO thin films were evaluated by a Hall Effect Measurement, an X-Ray Diffractormeter, UV/VIS spectrometer in visible range and a scanning electron microscopy, respectively. As-deposited IZO thin films exhibited resistivity of $5.4\times10^{-4}$ and $4.5\times10^{-4}$ [$\Omega$-cm] on PES and glass substrates, respectively. The optical transmittance showed over 85% in the visible region on PES and glass substrates.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.833-841
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• 1998

ZnO thin films on glass substrate were deposited by on RF mangetron reaction sputter with various grgon/oxygen gas ratios and sbustrate temperatures. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, AFM, XPS, RBS, and electrometer(keithley 617). All films showed a strong perferred orientation along the x-axis on glass substrate, and the chemical stoichiometry of Zn/)=1/1.0 was obtained at Ar/$O_2$ =50/50. Surface roughness and resistivity depended on the argon/oxygen gas ratio. The minimum surface roughness of 20$\AA$ and maximum resistivity of $10^8$ $\Omega$ cm were achieved at Ar/$O_2$=10/90.

• 반도체디스플레이기술학회지
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• 제5권2호
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• pp.33-36
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• 2006

Many issues arose to use the Pb-free solder as adhesive materials in MEMS ICs and packaging. Then this study for easy and simple sealing method using adhesive materials was carried out to maintain hermetic characteristic in MEMS Package. In this study, Hermetic characteristic using negative PR (XP SU-8 3050 NO-2) as adhesive at the interface of Si test coupon/glass substrate and Si test coupon/LTCC substrate was examined. For experiment, the dispenser pressure was 4 MPa and the $200\;{\mu}m{\Phi}$ syringe nozzle was used. 3.0 mm/sec as speed of dispensing and 0.13 mm as the gap between Si test coupon and nozzle was selected to machine condition. 1 min at $65^{\circ}C$ and 15 min at $95^{\circ}C$ as Soft bake, $200\;mj/cm^2$ expose in 365 nm wavelength as UV expose, 1 min at $65^{\circ}C$ and 6 min at $95^{\circ}C$ as Post expose bake, 60 min at $150^{\circ}C$ as hard bake were selected to activation condition of negative PR. Hermetic sealing was achieved at the Si test coupon/ glass substrate and Si test coupon/LTCC substrate. The leak rate of Si test coupon/glass substrate was $5.9{\times}10^{-8}mbar-l/sec$, and there was no effect by adhesive method. The leak rate of Si test coupon/LTCC substrate was $4.9{\times}10^{-8}mbar-l/sec$, and there was no effect by dispensing cycle. Better leak rate value could be achieved to use modified substrate which prevent PR flow, to increase UV expose energy and to use system that controls gap automatically with vision.

• 한국전기전자재료학회논문지
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• 제30권12호
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• pp.794-799
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• 2017

Ga-doped ZnO (GZO) films were deposited by an RF magnetron sputtering method on glass substrates using ZnO as a target containing 5 wt% $Ga_2O_3$ powder (for Ga doping). The structural, electrical, and optical properties of the GZO thin films were investigated as a function of the substrate temperatures. The deposition rate decreased with increasing substrate temperatures from room temperature to $350^{\circ}C$. The films showed typical orientation with the c-axis vertical to the glass substrates and the grain size increased up to a substrate temperature of $300^{\circ}C$ but decreased beyond $350^{\circ}C$. The resistivity of GZO thin films deposited at the substrate temperature of $300^{\circ}C$ was $7{\times}10^{-4}{\Omega}cm$, and it showed a dependence on the carrier concentration and mobility. The optical transmittances of the films with thickness of $3,000{\AA}$ were above 80% in the visible region, regardless of the substrate temperatures.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.413-413
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• 2007

In recent years, flexible display devices such as liquid crystal display (LCD), organic light emitting diode (OLED), etc. have attracted considerable interest in a wide variety of applications. Polymer substrate is absolutely necessary to realize this kind of flexible display devices. Using the polymer as a substrate, there are lots of advantages including not only mechanical flexibility such as rolling and bending characteristics but also light weights, low cost and so on. In detail, thickness and weights is only one forth and one second of glass substrate, respectively. However, it needs low temperature below $150^{\circ}C$ in the fabrication process comparing to conventional deposition process. The polymer substrate is not thermally stable as much as the glass substrate so that some deformation can be occurred according to variation of temperature. In particular, performance of devices can be easily deteriorated by shrinkage of substrate when heating it. In this paper, pre-annealing and deposition of buffer layer was introduced and studied to solve previously mentioned problems of the shrinkage and followed shear stress.