• 한국정보디스플레이학회:학술대회논문집
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• 2001.08a
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• pp.3-8
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• 2001

This paper will review the state of the latest development of AMLCD manufacturing facilities for large Substrate and discuss the future technologies. The trend of the display size enlargement of Note book PC has hauled the enlargement of the mother glass substrate in past 10 years. The enlargement of a substrate size has brought about the productivity improvement of the TFT panel with process innovation as yet. Will this trend be continuing hereafter too? The issues of the processing and facilities related with the large square substrate and mask step reduction will be overviewed and the future processing and facilities will be discussed.

• Journal of the Korean institute of surface engineering
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• v.48 no.6
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• pp.322-328
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• 2015

We investigated the diffusion behaviors, electrical properties, microstructures, and composition of In-Ga-Zn-O (IGZO) oxide thin films deposited by radio frequency reactive magnetron sputtering with increasing annealing temperatures. The samples were deposited at room temperature and then annealed at 300, 400, 500, 600 and $700^{\circ}C$ in air ambient for 2 h. According to the results of time-of-flight secondary ion mass spectrometry and X-ray photoelectron spectroscopy, no diffusion of In, Ga, and Zn components were observed at 300, 400, 500, $600^{\circ}C$, but there was a diffusion at $700^{\circ}C$. However, for the sample annealed at $700^{\circ}C$, considerable diffusion occurred. Especially, the concentration of In and Ga components were similar at the IGZO thin film but were decreased near the interface between the IGZO and glass substrate, while the concentration of Zn was decreased at the IGZO thin film and some Zn were partially diffused into the glass substrate. The high-resolution transmission electron microscopy results showed that a phase change at the interface between IGZO film and glass substrate began to occur at $500^{\circ}C$ and an unidentified crystalline phase was observed at the interface between IGZO film and glass substrate due to a rapid change in composition of In, Ga and Zn at $700^{\circ}C$. The best values of electron mobility of $15.5cm^2/V{\cdot}s$ and resistivity of $0.21{\Omega}cm$ were obtained from the sample annealed at $600^{\circ}C$.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.103-105
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• 2003

COG (Chip on Glass) technology using solder bump reflow has been investigated to attach IC chip directly on glass substrate of LCD panel. As It chip and LCD panel have to be heated to reflow temperature of the so]der bumps for COG bonding, it is necessary to use low-temperature solders to prevent the damage of liquid crystals of LCD panel. In this study, using the Sn-52In solder bumps of $40{\mu}m$ pitch size, solder joints between Si chip and glass substrate were made at temperature below $150^{\circ}C$. The contact resistance of the solder joint was $8.58m\Omega$, which was much lower than that of the joint made using the conventional ACF bonding technique. The Sn-52In solder joints with underfill showed excellent reliability at a hot humid environment.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.7
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• pp.87-93
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• 2010

This paper presents an evaluation of efficiency on glass precision machining by using abrasive water-jet machine. In this study, problems of conventional water-jet machining are examined experimentally and are analysized numerically. Especially, the reason of whitening on the machined surface of biochip glass is determined. It is found that the mass flow rate of abrasive input and transverse speed of water-jet are key parameters to control the direct machining of micro hole and channel on a glass substrate. Based on results of experimental analysis, possibility of direct fabrication of micro holes and channels on a glass substrate is successfully confirmed.

• Journal of the Korean Ceramic Society
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• v.39 no.7
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• pp.675-679
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• 2002

To produce a strengthened glass, single ion exchange properties such as three-point bend strength and residual stress were investigated in soda-lime-silicate substrate glass for display use. The present work showed that the maximum value of strength was 62.5${\times}$10$\sub$6/ kg/㎡ after, the two-step single ion exchange process at 470$^{\circ}C$ for 1 h and 450$^{\circ}C$ for 24 h. As the result of the fracture analysis after bending test, the residual stress on the fractured surface of the strengthened glass increased the flexibility by means of absorbing the elastic deformation energy in the glass. Also, the effects of absorbing the elastic deformation energy were analysed by curvature change, number of multiple crack branches and brittleness.

• Journal of the Korean Ceramic Society
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• v.31 no.4
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• pp.427-435
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• 1994

Cu-metallized low firing temperature substrates were synthesized by cofiring green sheet of cordierite-based glass with Cu. By Sol-Gel method, Cu powder was coated with borosilicate gel which should act as a glass frit in Cu paste during cofiring. Theoretical weight ratios of Glass/Cu were controlled to be 2.5, 5, 10 and 15% by varying alkoxide concentrations. Average particle size of coated Cu was 0.629~0.674 ${\mu}{\textrm}{m}$ in comparison to that of as-received Cu(0.596 ${\mu}{\textrm}{m}$), which increased with alkoxide concentration but did not increase above certain concentration. The weight ratios of coated layer were 2.11~5.37%. The properties of Cu-metallized low firing temperature substrate, cofired at 90$0^{\circ}C$ for 1h under H2/N2 atmosphere, were as follows; sheet resistance was 13~43 m{{{{ OMEGA }}/$\square$, adhesion strength was 1.0~2.1 kgf/$\textrm{mm}^2$. From the observations of SEM photographs, the gel coated on Cu performed excellently as a glass frit.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.385-387
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• 2003

We have fabricated a new-type high-brightness phosphor consisting of a sol-gel derived glass with finely dispersed semiconductor nanocrystals. It is possible to obtain visible light of any wavelength with a single UV irradiation. The glass firmly adheres to a glass substrate. Therefore it can easily be used for developing devices.

• Journal of computational fluids engineering
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• v.17 no.4
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• pp.16-23
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• 2012

Current display manufacturing processes apply thermal treatment of glass backplanes widely for hydrogen degassing, crystallization of thin-films, tempering, forming, and precompaction. Estimation of the characteristics of transient heating stages and thermal non-uniformities on a single glass substrate or in a stack of glasses are extremely helpful to understand non-homogeneity of mechanical and electronic features of nano/micro structures of end products. Based on simple heat transfer models and using an electric muffle furnace, temperature variations in a glass stack were predicted and measured for glass backplanes of $1.5{\times}1.85m^2$ in size and 0.7 mm in thickness. Except for the period of putting glass backplanes into the furnace, thermal radiation was the major heating mechanism for the treatment and theoretical predictions agreed well to the experimental temperatures on the backplanes. Using the theoretical model, thermal fields for a glass stack of glass-size, $2.2{\times}2.5m^2$, and of the number of sheets, 1 to 12, were calculated for practical design and manufacturing of the muffle furnace for large-scale displays, e.g. up to $8^{th}$ generation.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.170-176
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• 2014

Effective glass frit compositions enabled to absorb laser energy, and to seal a commercial dye-sensitized solar-cell-panel substrate were developed by using $V_2O_5$-based glasses with various amounts of $TeO_2$ substitution. The latter was intended to increase the lifetime of the solar cells. Substitution of $V_2O_5$ by $TeO_2$ provided a strong network structure for the glasses via the formation of tetrahedral pyramids in the glass, and changed the various glass properties, such as glass transition temperature ($T_g$), dilatometric softening point ($T_d$), crystallization temperature, coefficient of thermal expansion (CTE), and glass flowage without any detrimental effect on the laser absorption property of the glasses. The thermal expansion mismatch (${\Delta}{\alpha}$) between the glass frit and the substrate could be controlled within less than ${\pm}5%$ by addition of 10 wt% of ${\beta}$-eucryptite. An 810 nm diode laser was used for the sealing test. The laser sealing test revealed that the VZBT20 glass frit with 10 wt% ${\beta}$-eucryptite was successfully sealed the substrates without interfacial cracks and pores. The optimum sealing conditions were provided by a beam size of 3 mm, laser power of 40 watt, scan speed of 300 mm/s, and 200 irradiation cycles.

• Journal of Environmental Health Sciences
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• v.47 no.6
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• pp.540-547
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• 2021

Background: Indoor air pollutants are caused by a number of factors, such as coming in from the outside or being generated by internal activities. Typical indoor air pollutants include nitrogen dioxide and carbon monoxide from household items such as heating appliances and volatile organic compounds from building materials. In addition there is carbon dioxide from human breathing and bacteria from speaking, coughing, and sneezing. Objectives: According to recent research results, most indoor air pollution is known to be greatly affected by internal factors such as burning (biomass for cooking) and various pollutants. These pollutants can have a fatal effect on the human body due to a lack of ventilation facilities. Methods: We fabricated a polydopamine (PDA) layer with Ti substrates as a coating on supported glass fiber fabric to enhance its photo-activity. The PDA layer with TiO₂ was covalently attached to glass fiber fabric using the drop-casting method. The roughness and functional groups of the surface of the Ti substrate/PDA coated glass fiber fabric were verified through infrared imaging microscopy and field emission scanning electron microscopy (FE-SEM). The obtained hybrid Ti substrate/PDA coated glass fiber fabric was investigated for photocatalytic activity by the removal of ammonia and an epidermal Staphylococcus aureus reduction test with lamp (250 nm, 405 nm wavelength) at 24℃. Results: Antibacterial properties were found to reduce epidermal staphylococcus aureus in the Ti substrate/PDA coated glass fiber fabric under 405 nm after three hours. In addition, the Ti substrate/PDA coated glass fiber fabric of VOC reduction rate for ammonia was 50% under 405 nm after 30 min. Conclusions: An electron-hole pair due to photoexcitation is generated in the PDA layer and transferred to the conduction band of TiO₂. This generates a superoxide radical that degrades ammonia and removes epidermal Staphylococcus aureus.