• Title/Summary/Keyword: Substrate film

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High-frequency characteristics of short-wavelength transmission line on polyether sulfone thin film for a realization of transparent flexible wireless communication device (투명 플렉시블 무선통신 소자구현을 위한 PES 박막상의 단파장 선로에 대한 고주파 특성연구)

  • Yun, Young
    • Journal of Advanced Marine Engineering and Technology
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    • v.40 no.4
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    • pp.353-361
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    • 2016
  • This work presents an investigation of the radio frequency characteristics of an FTLPGS (fishbone-type transmission line employing periodic ground structure) fabricated on PES (polyether sulfone) for the realization of a transparent flexible wireless communication device. According to the results, the FTLPGS on PES showed a shorter wavelength characteristic when compared with a conventional coplanar waveguide. Concretely, the wavelength of the FTLPGS was 1.91 mm at 50 GHz, which was 48.5% of the conventional coplanar waveguide. The bandwidth extraction result showed that the passband of the FTLPGS on PES was 250 GHz. Unlike conventional periodic structures, the characteristic impedance of the FTLPGS on PES also showed a very low frequency dependency. A miniaturization of the RF circuit on the PES substrate was made possible by the FTLPGS on PES having shown characteristic impedance lower than that of conventional transmission lines. These results mean that, with a broadband operation frequency, the FTLPGS on PES is a suitable construction application for the transmission line and distributed passive components.

The Effect of Impact Velocity on Droplet-wall Collision Heat Transfer Above the Leidenfrost Point Temperature (Leidenfrost 지점 온도 이상에서 액적-벽면 충돌 열전달에 대한 충돌 속도의 영향)

  • Park, Jun-seok;Kim, Hyungdae;Bae, Sung-won;Kim, Kyung Doo
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.39 no.7
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    • pp.567-578
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    • 2015
  • Single droplet-wall collision heat transfer characteristics on a heated plate above Leidenfrost temperature were experimentally investigated considering the effects of impact velocity. The collision characteristics of the droplet impinged on the heated wall and the changes in temperature distribution were simultaneously measured using synchronized high-speed video and infrared cameras. The surface heat flux distribution was obtained by solving the three-dimensional transient heat conduction equation for the heated substrate using the measured surface temperature data as the boundary condition for the collision surface. As the normal impact velocity increased, heat transfer effectiveness increased because of an increase in the maximum spreading diameter and a decrease in the vapor film thickness between the droplet and heated wall. For We < 30, droplets stably rebounded from a heated wall without breakup. However, the droplets broke up into small droplets for We > 30. The tendency of the heat transfer to increase with increasing impact velocity was degraded by the transition from the rebounding region to the breakup region; this was resulted from the reduction in the effective heat transfer area enlargement due to the breakup phenomenon.

Organo-Compatible Gate Dielectrics for High-performance Organic Field-effect Transistors (고성능 유기 전계효과 트랜지스터를 위한 유기친화 게이트 절연층)

  • Lee, Minjung;Lee, Seulyi;Yoo, Jaeseok;Jang, Mi;Yang, Hoichang
    • Applied Chemistry for Engineering
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    • v.24 no.3
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    • pp.219-226
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    • 2013
  • Organic semiconductor-based soft electronics has potential advantages for next-generation electronics and displays, which request mobile convenience, flexibility, light-weight, large area, etc. Organic field-effect transistors (OFET) are core elements for soft electronic applications, such as e-paper, e-book, smart card, RFID tag, photovoltaics, portable computer, sensor, memory, etc. An optimal multi-layered structure of organic semiconductor, insulator, and electrodes is required to achieve high-performance OFET. Since most organic semiconductors are self-assembled structures with weak van der Waals forces during film formation, their crystalline structures and orientation are significantly affected by environmental conditions, specifically, substrate properties of surface energy and roughness, changing the corresponding OFET. Organo-compatible insulators and surface treatments can induce the crystal structure and orientation of solution- or vacuum-processable organic semiconductors preferential to the charge-carrier transport in OFET.

Magnetic Circular Dichroism Study of co Thin Films on Pd(111) Surface

  • Kim, Wookje;Kim, Wondong;Kim, Hyunjo;Kim, Jae-Young;Hoon Kho;Park, J.H.;Oh, S.J.
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.169-169
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    • 1999
  • We studied magnetic properties of co thin films deposited on Pd (111) surface, which attracted much attention recently due to the perpendicular magnetic anisotropy, using magnetic circular dichroism(MCD). Special attention was paid on the effect of Pd capping and interface roughness on the direction of magnetic easy axis, and for that purpose MCD signals for all Co thicknesses were measured with two different ways : in-plane and out-of-plane geometry. In case of bare Co films deposited on smooth Pd(111) surface, no MCD signal was observed under 4$\AA$ co thickness. At 4$\AA$ Co thickness, MCD signal at the out-of-plane geometry was observed, and for thicker Co films, only in-plane MCD signal was measured. This type of magnetic easy axis transition has been reported for other cases like Co/Pt system. The effect of 5$\AA$ Pd capping on these bare Co films made an remarkable change on the transition of magnetic easy axis. Out-of-plane MCD signals exists up to 20$\AA$ Co thickness, and disappears at 24$\AA$ Co thickness. In-plane MCD signals first appears at 10$\AA$ Co thickness and gradually increases up to 24$\AA$ Co thickness. Between 10$\AA$ and 20$\AA$ Co thickness, in-plane and out-of-plane MCD signal coexist. The formation of multi-domain structure or the existence of tilted magnetic easy axis is an possible scenario for such an interesting coexistence. The effect of interface roughness was also tested by measuring MCD signal on Co films deposited on un-annealed Pd(111) surface. Out-of-plane MCD signal was observed up to 8$\AA$ Co thickness and the anisotropy of MCD signal at 4$\AA$ Co thickness was very large with respect to that of Co film deposited on the smooth substrate. Above 8$\AA$ thickness, there exists only in-plane MCD signal. From above results, it was concluded that both Pd capping and interface roughness induce and reenforce the perpendicular magnetic anisotropy. The large perpendicular magnetic anisotropy of Co/Pd multilayer system made by sputtering method can be well understood from our results.

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Study on crystallization of $PbTiO_3$ thin films by the Sol-Gel method (Sol-Gel법을 이용한 $PbTiO_3$ 박막의 결정화에 관한 연구)

  • Kyu Seog Hwang;Byung Wan Yoo;Byung Hoon Kim
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.4 no.2
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    • pp.199-209
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    • 1994
  • $PbTiO_3$ thin films were prepared on soda-lime-silica slide glasses, Si-wafer and sapphire substrate by the dip-coating of precursor solution. As starting materials, titanium tetra iso-propoxide and lead acetate trihydrate were used. Then acetylacetone was added to prepare stable sol. The effect of the parameters such as viscosity and composition of sol were investigated. The optical transmittance at visible range, refractive index, IR spectra were measured in varying compositions, thickness and heat treatment temperature. The crystallization of $PbTiO_3$ films were measured by using XRD and SEM. Diffusion of compositions from slide glass to thin film were investigated by using EDX, too. These sols not precipitated for 20 days. Transmittance of $PbTiO_3$ films at visible range were decreased with the increase of thickness and heat treatment temperatures, and were exhibited flat spectra. Pyrochlore type appeared in the films on slide glass and perovskite type appeared in the films on Si-wafer or sapphire at $600^{\circ}C$. Perovskite crystals transformed to $PbTi_3O_7$ phase at $800^{\circ}C$.

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Photocurrent study on the splitting of the valence band and growth of $CdGa_2Se_4$ single crystal thin film by hot wall epitaxy (Hot Wall epitaxy(HWE)법에 의한 $CdGa_2Se_4$ 단결정 박막의 성장과 가전자대 갈라짐에 대한 광전류 연구)

  • Park, Chang-Sun;Hong, Kwang-Joon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.17 no.5
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    • pp.179-186
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    • 2007
  • Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy(HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},\;345cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4/SI$(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation $E_g(T)=2.6400eV-(7.721{\times}10^{-4}eV/K)T^2/(T+399K)$. Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) far the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11}-exciton$ peaks.

The Fabrication of OTFT-OLED Array Using Ag-paste for Source and Drain Electrode (Ag 페이스트를 소스와 드레인 전극으로 사용한 OTFT-OLED 어레이 제작)

  • Ryu, Gi-Seong;Kim, Young-Bae;Song, Chung-Kun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.5
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    • pp.12-18
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    • 2008
  • Ag paste was employed for source and drain electrode of OTFTs and for the data metal lines of OTFT-OLED array on PC(polycarbonate) substrate. We tested two kinds of Ag-pastes such as pastes for 325 mesh and 500 mesh screen mask to examine the pattern ability and electrical performance for OTFTs. The minimum feature size was 60 ${\mu}m$ for 325 mesh screen mask and 40 ${\mu}m$ for 500 mesh screen mask. The conductivity was 60 $m{\Omega}/\square$ for 325 mesh and 133.1 $m{\Omega}/\square$ for 500 mesh. For the OTFT performance the mobility was 0.35 $cm^2/V{\cdot}sec$ and 0.12 $cm^2/V{\cdot}sec$, threshold voltage was -4.7 V and 0.9 V, respectively, and on/off current ratio was ${\sim}10^5$, for both screen masks. We applied the 500 mash Ag paste to OTFT-OLED array because of its good patterning property. The pixel was composed of two OTFTs and one capacitor and one OLED in the area of $2mm{\times}2mm$. The panel successfully worked in active mode operation even though there were a few bad pixels.

The electrical properties of PLZT thin films on ITO coated glass with various post-annealing temperature (ITO 기판에 제작된 PLZT 박막의 후열처리 온도에 따른 전기적 특성평가)

  • Cha, Won-Hyo;Youn, Ji-Eon;Hwang, Dong-Hyun;Lee, Chul-Su;Lee, In-Seok;Sona, Young-Guk
    • Journal of the Korean Vacuum Society
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    • v.17 no.1
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    • pp.28-33
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    • 2008
  • Lanthanum modified lead zirconate titanate ($Pb_{1.1}La_{0.08}Zr_{0.65}Ti_{0.35}O_3$) thin films were fabricated on indium doped tin oxide (ITO)-coated glass substrate by R.F magnetron sputtering method. The thin films were deposited at $500^{\circ}C$ and post-annealed with various temperature ($550-750^{\circ}C$) by rapid thermal annealing technique. The structure and morphology of the films were characterized with X-ray diffraction (XRD) and atomic force microscopy (AFM) respectively. The hysteresis loops and fatigue properties of thin films were measured by precision material analyzer. As the annealing temperature was increased, the remnant polarization value was increased from $10.6{\mu}C/cm^2$ to $31.4{\mu}C/cm^2$, and coercive field was reduced from 79.9 kV/cm to 60.9 kV/cm. As a result of polarization endurance analysis, the remnant polarization of PLZT thin films annealed at $700^{\circ}C$ was decreased 15% after $10^9$ switching cycles using 1MHz square wave form at ${\pm}5V$.

Fabrication of P-type Transparent Oxide Semiconductor SrCu2O2 Thin Films by RF Magnetron Sputtering (RF 마그네트론 스퍼터링을 이용한 p 타입 투명전도 산화물 SrCu2O2 박막의 제조)

  • Seok, Hye-Won;Kim, Sei-Ki;Lee, Hyun-Seok;Lim, Tae-Young;Hwang, Jong-Hee;Choi, Duck-Kyun
    • Korean Journal of Materials Research
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    • v.20 no.12
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    • pp.676-680
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    • 2010
  • Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

Emulsion Polymerization of Vinyl acetate-Butyl acrylate Copolymer (유화 중합에 의한 비닐 아세테이트-부틸 아크릴레이트 공중합체의 합성 연구)

  • 설수덕;임종민
    • Polymer(Korea)
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    • v.28 no.2
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    • pp.135-142
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    • 2004
  • Poly(vinyl acetate) (PVAc) prepared by emulsion polymerization has broad applications for additives such as paint binder, adhesive for wood and paper due to its low glass transition temperature which help to plasticize substrate resins. Since emulsion polymerization has a disadvantage that surfactant and ionic initiator degrade properties of the product polymer, poly(vinyl acetate-co-butyl acrylate) (VVc-BA) was synthesized using potassium persulfate as catalyst and poly(vinyl alcohol) (PVA) as protective colloid to prevent the degradation. The copolymer latex product was internally plasticized and has enhanced colloid stability, adhesion, tensile strength and elongation. During VAc-BA emulsion polymerization, no coagulation and complete conversion occur with the reactant mixture of 0.7wt% potassium persulfate, 15wt% poly(vinyl alcohol) (PVA-217), and the balanced monomer that the weight ratio of vinyl acetate to butyl acrylate is 19. As the concentrations of PVA increase, the copolymerization becomes faster and polymer particles are more stable, resulting in enhanced mechanical stability of the VAc-BA copolymer. However, the size of the polymer particles decreases with increasing PVA contents. Properties of the VAc-BA copolymer, such as minimum film formation temperature, glass transition temperature, surface morphology, molecular weight and molecular weight distribution, tensile strength and elongation, were characterized using differential scanning calorimeter, transmission electron microscope and other instruments.