• Journal of the Optical Society of Korea
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• 제18권6호
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• pp.732-738
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• 2014

Combined optical simulation of the ray-tracing technique and the finite difference time domain method was used to investigate the effect of the emitter orientation and the photonic crystal layer on the outcoupling efficiency (OCE) of bottom-emission type organic light emitting diodes (OLEDs). The OLED with a horizontal emitter exhibited an opposite interference effect to that of one with a vertical emitter, which suggested that the OCE would be very sensitive to the emitter orientation at a fixed emitter-cathode distance. The OLED with a horizontal emitter exhibited much larger OCE than that with a vertical emitter did, which was due to the substantial difference in the radiation pattern along with the different coupling with the surface plasmon excitation. The OCE with a horizontal emitter was increased by approximately 1.3 times by inserting a photonic crystal layer between the indium tin oxide layer and the glass substrate. The present study suggested that appropriate control of the emitter orientation and its combination to other outcoupling structures could be used to enhance the OCE of OLEDs substantially.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.273-280
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• 2002

The stochiometric mix of evaporating materials for the CuGaTe$_2$ single crystal thin films was prepared from horizontal furnance. For extrapolation method of X-ray diffraction patterns for the CuGaTe$_2$ polycrystal, it was found tetragonal structure whose lattice constant a$\_$0/ and c$\_$0/ were 6.025 ${\AA}$ and 11.931 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaTe$_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 670 $^{\circ}C$ and 410 $^{\circ}C$ respective1y, and the thickness of the single crystal thin films is 2.1 $\mu\textrm{m}$. The crystalline structure of single crystalthin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. The carrier density and mobility of CuGaTe$_2$ single crystal thin films deduced from Hall data are 8.72${\times}$10$\^$23/㎥, 3.42${\times}$10$\^$-2/㎡/V$.$s at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the CuGaTe$_2$ single crystal thin film, we have found that the values of spin orbit coupling Δs.o and the crystal field splitting Δcr were 0.0791 eV and 0/2463eV at 10K, respectively. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0470eV and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be 0.0490eV, 0.00558eV, respectively.

• 한국전자파학회논문지
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• 제23권12호
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• pp.1327-1336
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• 2012

본 논문에서는 안테나의 크기를 소형화하고, 동시에 다중 대역 서비스를 만족하는 다중 링 패치를 이용한 양면형 모노폴 안테나를 제안하였다. 사각 링 형태의 패치를 사용하여 대역폭을 증가시키고, 다수의 링 패치를 연속적으로 배열함으로써 링 패치의 단점인 빔 폭을 증가시켰다. 다수의 링 패치를 연속적으로 삽입하면, 첫 번째 패치로부터 전류가 연쇄적으로 흘러 공진이 발생한다. 이는 패치 간의 간격이 매우 좁기 때문에 가능하다. 다중 링 패치를 동일면에 모두 배열할 경우, 패치 간의 간격이 매우 좁아, 이를 해결하기 위하여 기판의 앞면과 뒷면에 순차적으로 설계하였다. 다중 대역 특성을 얻기 위해서 패치를 기판의 양면에 순차적으로 배열하였기 때문에 안테나의 기판 두께와 비유전율이 본 안테나의 중요한 파라미터가 된다. 따라서 두 파라미터에 대해 모의실험을 통해 최적의 값을 찾아내고, 한쪽 면에 패치가 있는 경우와 거의 동일한 효과를 발생시켰다. 전체적인 패치는 기본 링형 패치에서 단계별로 85 %를 감소시켜, 총 4단계의 패치로 구성하였다. 이로 인하여 제안된 안테나는 1.75~2.6 GHz(850 MHz), 3.24~3.46 GHz(220 MHz), 3.8~4.0 GHz(200 MHz), 4.4~4.9 GHz(500 MHz)의 주파수 대역을 만족한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.230-233
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• 2004

The stochiometric mix of evaporating materials for the $CuInS_2$ single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuInS_2$ polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.524\;{\AA}$ and $11.142\;{\AA}$, respectively. To obtain the single crystal thin films, $CuInS_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperature were 640 t and 430 t, respectively and the thickness of the single crystal thin films was $2{\mu}m$. Hall effect on this sample was measured by the method of van dot Pauw and studied on carrier density and temperature dependence of mobility. The carrier density and mobility deduced from Hall data are $9.64{\times}10^{22}/m^3,\;2.95{\times}10^{-2}\;m^2/V{\cdot}s$ at 293 K, respectively The optical energy gaps were found to be 1.53 eV at room temperature. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the thin film, we have found that the values of spin orbit coupling splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 0.0211 eV and 0.0045 eV at 10 K, respectively. From PL peaks measured at 10K, 807.7nm (1.5350ev) mean Ex peak of the free exciton emission, also 810.3nm (1.5301eV) expresses $I_2$ peak of donor-bound exciton emission and 815.6nm (1.5201eV) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 862.0nm (1.4383eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).

• 한국전자파학회논문지
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• 제23권8호
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• pp.958-966
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• 2012

본 논문에서는 저온 동시 소성 세라믹(Low Temperature Co-fired Ceramic: LTCC) 기술을 사용하여 블루투스와 WiFi에서 동작하는 무선 전단부 모듈(RF Front-end Module)을 설계, 구현하였다. 무선 전단부 모듈은 2.4/5 GHz 대역 다이플렉서와 2 GHz 대역 발룬, 5 GHz 대역 발룬, 그리고 송 수신용 SPDT 스위치와 SP3T 스위치로 구성되어 있다. LTCC의 설계에 있어, 적층 구조의 특성으로 인해 발생되는 예상 기생 성분은 시뮬레이션을 활용하여 설계하였다. 제작한 무선 전단부 모듈은 내부 접지(inner ground) 3개 층을 포함하여 총 13개 패턴으로 구성되었으며, 무선 전단부 모듈의 크기는 $3.0mm{\times}3.7mm{\times}0.66mm$이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.75-75
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• 2015

Strong interactions between electromagnetic radiation and electrons at metallic interfaces or in metallic nanostructures lead to resonant oscillations called surface plasmon resonance with fascinating properties: light confinement in subwavelength dimensions and enhancement of optical near fields, just to name a few [1,2]. By utilizing the properties enabled by geometry dependent localization of surface plasmons, metal photonics or plasmonics offers a promise of enabling novel photonic components and systems for integrated photonics or sensing applications [3-5]. The versatility of the nanoplasmonic platform is described in this talk on three folds: our findings on an enhanced ultracompact photodetector based on nanoridge plasmonics for photonic integrated circuit applications [3], a colorimetric sensing of miRNA based on a nanoplasmonic core-satellite assembly for label-free and on-chip sensing applications [4], and a controlled fabrication of plasmonic nanostructures on a flexible substrate based on a transfer printing process for ultra-sensitive and noise free flexible bio-sensing applications [5]. For integrated photonics, nanoplasmonics offers interesting opportunities providing the material and dimensional compatibility with ultra-small silicon electronics and the integrative functionality using hybrid photonic and electronic nanostructures. For sensing applications, remarkable changes in scattering colors stemming from a plasmonic coupling effect of gold nanoplasmonic particles have been utilized to demonstrate a detection of microRNAs at the femtomolar level with selectivity. As top-down or bottom-up fabrication of such nanoscale structures is limited to more conventional substrates, we have approached the controlled fabrication of highly ordered nanostructures using a transfer printing of pre-functionalized nanodisks on flexible substrates for more enabling applications of nanoplasmonics.

• 한국재료학회지
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• 제12권4호
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• pp.254-258
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• 2002

To realize channel cross-connecting in optical communications systems, a high speed optical matrix switch was fabricated using z-cut $LiNbO_3$. For switch fabrication was design bending structure and coupling length and four $2{\times}2$ directional couplers were integrated on one substrate far construction of a $4{\times}4$ switch. Single-mode optical waveguides were formed by Ti-diffusion at a wet $O_2$ atmosphere. Ti-diffusion profile, refractive index variation and waveguide morphology were analyzed by Prism coupler and optical microscopy, respectively.

• 전기학회논문지
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• 제59권2호
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• pp.390-396
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• 2010

An 80MHz surface acoustic wave (SAW)-based gyroscope utilizing a progressive wave was developed on a piezoelectric substrate. The developed sensor consists of two SAW oscillators in which one is used for sensing element and has metallic dots in the cavity between input and output IDTs. The other is used for a reference element. Coupling of mode (COM) modeling was conducted to determine the optimal device parameters prior to fabrication. According to the simulation results, the device was fabricated and then measured on a rate table. When the device was subjected to an angular rotation, oscillation frequency differences between the two oscillators were observed because of the Coriolis force acting on the metallic dots. Depending on the angular rate, the difference of the oscillation frequency was modulated. The obtained sensitivity was approximately 52.35 Hz/deg.s within the angular rate range of 0~1000 deg/s. The performances of devices with three IDT structures for two kinds of piezoelectric substrates were characterized. Good thermal stability was also observed during the evaluation process.

• Advances in nano research
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• 제7권3호
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• pp.157-167
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• 2019

In this paper, a classical plate model is utilized to formulate the wave propagation problem of magnetostrictive sandwich nanoplates (MSNPs) while subjected to hygrothermal loading with respect to the scale effects. Herein, magnetostriction effect is considered and controlled on the basis of a feedback control system. The nanoplate is supposed to be embedded on a visco-Pasternak substrate. The kinematic relations are derived based on the Kirchhoff plate theory; also, combining these obtained equations with Hamilton's principle, the local equations of motion are achieved. According to a nonlocal strain gradient theory (NSGT), the small scale influences are covered precisely by introducing two scale coefficients. Afterwards, the nonlocal governing equations can be derived coupling the local equations with those of the NSGT. Applying an analytical solution, the wave frequency and phase velocity of propagated waves can be gathered solving an eigenvalue problem. On the other hand, accuracy and efficiency of presented model is verified by setting a comparison between the obtained results with those of previous published researches. Effects of different variants are plotted in some figures and the highlights are discussed in detail.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권12호
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• pp.654-664
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• 2000

Thin films of ZnO are deposited by using an RF magnetron sputtering with varying the substrate temperature(RT~39$0^{\circ}C$) and RF power(50~250W). Cu-doped ZnO(denoted by ZnO:Cu) films have also been prepared by co-spputtering of a ZnO target on which some Cu-chips are attached. Different substrate materials, such as Si, $SiO_{2}/Si$, sapphire, DLC/Si, and poly-diamond/Si, are employed to compare the c-axial growth features of deposited ZnO films. Texture coefficient(TC) values for the (002)-preferential growth are estimated from the XRD spectra of deposited films. Optimal ranges of RF powers and substrate temperatures for obtaining high TC values are determined. Effects of Cu-doping conditions, such as relative Cu-chip sputtering areas, $O_{2}/(Ar+O_{2})$ mixing ratios, and reactor pressures, on TC values, electrical resistivities, and relative Cu-compositions of deposited ZnO:Cu films have been systematically investigated. XPS study shows that the relative densities of metallic $Cu(Cu^{0})$ atoms and $CuO(Cu^{2+})$-phases within deposited films may play an important role of determining their electrical resistivities. It should be noted from the experimental results that highly resistive(> $10^{10}{\Omega}cm$ ZnO films with high TC values(> 80%) can be achieved by Cu-doping. SAW devices with ZnO(or Zn):Cu)/IDT/$SiO_{2}$/Si configuration are also fabricated to estimate the effective electric-mechanical coupling coefficient($k_{eff}^{2}$) and the insertion loss. It is observed that the devices using the Cu-doped ZnO films have a higher $k_{eff}^{2}$ and a lower insertion loss, compared with those using the undoped films.