• Journal of Korean Society of Environmental Engineers
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• v.27 no.5
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• pp.491-498
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• 2005

J sewage treatment plant (WWTP) in Busan has used methanol as an external carbon source for the biological denitrification process. Methanol is widely used. but rather expensive and very dangerous in handling. Therefore, it has been required that the economic alternative carbon source must be developed. By-product from a fine chemical industry can be Purified by removing high molecular weight substances using the ultrafilter membrane separation process and RBDCOD fraction becomes $98{\sim}99%$ of COD substances in the purified by-product. The purified by-product containing three types of alcohols, methanol, prophylenglycol and methoxypropanol; showed similar chemical characteristics to the methanol, a main external carbon source, in biodegradation pathway. Shown above, the compatibility between main and alternative carbon sources has been achieved. Also very short or no adaptation period is necessary in the case of exchanging these carbon sources. The compatibility between external carbon sources is an essential element for stabilizing WWTP operations. During the full-scale application test of the by-product, the alternative carbon source line got on par with the treatment efficiency of the methanol line. With the test result, J-WWTP changed methanol to a fine chemical by-product, in two out of three J-WWTP lines. Moreover, it is expected that 55.4% of the external carbon source cost reduction can be achieved in the alternative carbon source applied lines.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.157-157
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• 2016

최근 많은 산업의 발전으로 인해 환경오염을 유발시키는 폐수가 다량으로 배출되고 있으며, 이러한 폐수 속에는 유기용매, 고분자 물질 및 각종 염 등의 난분해성 물질들이 다량으로 함유되어 있다. 이런 물질들을 분해시키기 위해 물리적, 생물학적 수처리 방법이 많이 이용되고 있지만 이 방법들은 각각 운전비용과 처리비용이 고가인 단점이 있다. 따라서 비용과 효율 측면에서 효과적인 폐수처리를 위해서 전기화학적 폐수처리 방법이 많이 사용되고 있다. 물리적, 생물학적 처리 방법에 비해 비용이 적게 들고, 처리 후 잔류물이 남지 않으며. 독성을 띄는 산화제의 첨가 없이도 높은 폐수처리 능력을 보이기 때문에 친환경적이므로, 전기화학적 폐수산화 처리에 사용되는 불용성 전극에 대한 연구가 많이 진행되어져 오고 있다. 그 중 BDD(Boron-doped diamond) 전극은 표면에서 강력한 산화제인 수산화 라디칼의 높은 발생량으로 인해 뛰어난 폐수처리 능력을 보이므로 불용성 전극 분야에서 활발한 연구가 진행 중이다. 그러나 기존에 BDD 전극의 기판 모재로 이용되던 Si, W, Pb등은 모두 기계적 강도. 폐수처리 능력 및 독성 문제로 인해 한계가 있었고, 특히 Nb기판 위에 형성시킨 BDD 전극은 뛰어난 폐수처리 능력에도 불구하고 비싼 모재 원가로 인해 상용화가 힘든 실정이다. 이런 문제점을 해결하기 위해 높은 기계적 강도와 전기화학적 안정성을 가진 Ti 기판을 사용한 BDD 전극에 대한 연구가 보고되고 있다. 그러나 BDD와 Ti 간의 lattice mismatch, BDD층 형성을 위한 고온 공정 시 탄소의 확산으로 인한 기판 표면에서의 TiC층 형성으로 인해 접착력이 감소하여 박리가 생기는 문제점이 있다. BDD와 Ti의 접착력을 향상시키기 위해 융점이 높고, 전기전도성이 우수한 TiN을 diffusion barrier layer로 삽입하면 탄소 확산에 의한 TiC층의 생성을 억제하여, 내부응력에 기인한 접착력 감소를 방지할 수 있다. 또 하나의 방법으로 Ti 기판의 전처리를 통해 BDD층의 접착력을 향상 시킬 수 있다. Sanding과 etching을 통해 기판 표면의 물리, 화학적인 표면조도를 부여하고, seeding을 통해 diamond 결정 성장에 도움을 주는 seed 입자를 분포시킴으로써, 중간층과 BDD층의 접착력을 향상시키고, BDD 결정핵 성장을 촉진시켜 고품질의 BDD박막 증착이 가능하다. 본 연구에서는 기존 Si, Nb 등의 기판 모재를 Ti로 대체함으로써 제조원가를 절감시키고, TiN 중간층을 삽입하여 접착력을 향상시킴으로써 기존의 BDD 전극과 동등한 수준의 물성 및 수처리 특성을 가진 BDD전극 제작을 목표로 하였다. $25{\times}25mm$의 Ti 기판위에 TiN 중간층을 DC magnetron sputtering을 이용하여 증착 후, BDD 전극 층을 HFCVD로 증착하였다. 전처리를 진행한 기판과 중간층 및 BDD층의 미세구조를 XRD로 분석하였고, 표면 형상을 SEM으로 확인하였다. BDD전극의 접착력 분석을 통해 TiN 중간층의 최적 조성을 도출하고, 최종적으로 BDD/TiN/Ti 전극의 CV특성과 가폐수의 COD분해능력 및 축산폐수, 선박평형수 등의 실제 폐수 처리 능력을 BDD/Si, BDD/Nb 전극과 비교 검토할 것이다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.1
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• pp.11-19
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• 2013

In this paper, we designed and implemented the planar monopole antenna using the coupling effect for the multi-band characteristic. A parasitic element for the multi-band characteristic based on a rectangular patch with single resonance is inserted. Spiral shaped parasitic element is used for minimizing the antenna size and obtaining the multi-resonance characteristic. The frequency characteristics are modified and optimized by varying specific parameters. By inserting an L-shaped resonator at both sides of the feed line which connected through the via hole to the ground plane, unnecessary frequency bands are eliminated. Proposed antenna dimension is $40{\times}60{\times}1mm^3$. It is fabricated on the FR-4 substrate(${\varepsilon}_r$=4.4) using a microstrip line of $50{\Omega}$ for impedance matching. By measurement results, the characteristic of the return loss under -10 dB are 1.714~2.496 GHz, 2.977~4.301 GHz, and 4.721~6.315 GHz, and the radiation patterns have omni-directional shapes.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.1
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• pp.1-10
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• 2013

In this paper, a broadband planar monopole antenna for multi-band services is proposed. The physical size of the proposed antenna is miniaturized by folding a rectangular loop. And a resonance point in the 3.9 GHz band is reduced by a coupling phenomenon with the central part of the T-shaped patch and the folded rectangular loop. In addition, the T-shaped patch is inserted to the rectangular shaped monopole antenna due to deriving the broadband frequency characteristics. The frequency characteristic is optimized by adjusting the gap and length of the folded rectangular loops and a transverse diameter of the T-shaped patch. The antenna dimensions including the ground plane are $40{\times}60{\times}1.6mm^3$. It is fabricated on the FR-4 substrate(${\epsilon}_r$=4.4) using a microstrip line of $50{\Omega}$ for impedance matching. In the measured result, the bandwidth corresponding to the VSWR of 2:1 is 162 MHz(815~977 MHz) and 2,530 MHz(1.43~3.96 GHz). For analyzing the human effect by the proposed antenna, 1 g and 10 g averaged SARs are simulated and measured. As the simulated results, 1 g-averaged SAR is 1.044 W/kg, and 10 g-averaged SAR is 0.718 W/kg. This result are satisfied by the SAR guidelines which are 1.6 W/kg(1 g-averaged) and 2.0 W/kg(10 g-averaged).

• Journal of Navigation and Port Research
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• v.27 no.2
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• pp.209-215
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• 2003

In this paper. We tested and fabricated the error amplifier for the 15 Watt linear power amplifier for the IMT-2000 baseband station. The error amplifier was comprised of subtractor for detecting intermodulation distortion, variable attenuator for control amplitude, variable phase shifter for control phase, low power amplifier and high power amplifier. This component was designed on the RO4350 substrate and integrated the aluminum case with active biasing circuit. For suppression of spurious, the through capacitance was used. The characteristics of error amplifier measured up to 45 dB gain, $\pm$0.66 dB gain flatness and -15 dB input return loss. Results of application to the 15 Watt feedforward Linear Power Amplifier, the error amplifier improved with 27 dB cancellation from 34 dBc to 61 dBc IM$_3$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.10a
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• pp.522-525
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• 2018

In this paper, we design a UWB / WAS microstrip antenna for wireless local high - speed communication. The substrate of the proposed antenna is FR-4 (er = 4.3) and its size is $30[mm]{\times}30[mm]$. It is designed to have characteristics that can be used in the frequency bands of 3.5 [GHz] and 5.2 [GHz], which are UWB / WAS frequency bands. The simulation was performed using CST Microwave Studio 2014. Simulation results show that the gain is 1.592 [dBi] at 3.5 [GHz] and 2.210 [dBi] at 5.2 [GHz]. The S-parameter also showed a result of less than -10 [dB] (WSWR 2: 1) in the desired frequency band. Microstrip antennas have been miniaturized, high performance, and light weight, and excellent and low cost systems are continuously being developed. In addition, many people use wireless local area network systems used in homes, companies, and public facilities. Since the UWB / WAS technology is proposed according to the development of the system and the demand increase, the antenna that satisfies the above conditions will be designed and the technology applicable to the system will be used more conveniently.

• Journal of Convergence Society for SMB
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• v.3 no.2
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• pp.27-32
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• 2013

Wireless Body Area Networks (WBAN) have been made possible by the emergence of small and lightweight wireless systems such as Bluetooth, enabled devices and PDAs. Antennas are an essential part of any WBAN system and due to various technical requirements and physical constraints, careful consideration of their design and deployment is needed. This paper is proposing on the design of wearable antenna as parts of clothing to serve communications functions, such as tracking and navigation in health care applications. The substrates of the wearable antennas will be made from textile materials and since it is wearable, it should have a small size, be light weight, low maintenance, and unobtrusive. This proposed paper will also investigate the influence of different parameters for wearable antenna including types of textile/substrate to ensure that the antenna design satisfies WBAN requirements. The characteristics and behavior of the antenna need to adhere to specifications set by wireless standards and system technology requirements. This means that the transmitting and receiving frequency bands of the various units need to be chosen accordingly. Since there are restrictions on the level of power to which the human body can be exposed to, the antenna as well as other RF system components must be designed to meet these restrictions. Antenna gain, which directly affects power transmitted, is a critical parameter in ensuring power levels fall within the safety guidelines and so will be of primary importance in the design. The electromagnetic interaction between WBAN antennas and devices and the human body will also be explored.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.2
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• pp.14-19
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• 2011

We have fabricated GaN Schottky barrier diode (SBD) for high-voltage applications on Si substrate. The leakage current and the electrical characteristics of GaN SBD are investigated by annealing metal-semiconductor junctions. Ohmic junctions of Ti/Al/Mo/Au and Schottky junctions of Ni/Au are used in the fabrication. A test structure is proposed to measured buffer leakage current through a mesa structure. When annealing temperature is increased from $700^{\circ}C$ to $800^{\circ}C$, measured buffer leakage current is also increased from 87 nA to 780 nA at the width of 100 ${\mu}m$. The diffusion of Au, Ti, Mo, O into GaN buffer layer increases the leakage current and that is verified by Auger electron spectroscopy. Experimental results show that the low leakage current and the high breakdown voltage of GaN SBD are achieved by annealing metal-semiconductor junctions.

• Journal of the Korean Magnetics Society
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• v.13 no.4
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• pp.155-159
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• 2003

We report on the annealing effect and ferromagnetic characteristics of Zn$_{0.7}$Mn$_{0.3}$O film prepared by sol-gel method on the silicon (100) substrate using field emission-scanning electron microscopy (FE-SEM), energy dispersive spectroscopy (EDS), X-ray diffractometry (XRD) and superconducting quantum interference device (SQUID) magnetometry. Magnetic measurements show thatZn$_{0.7}$Mn$_{0.3}$O films exhibit ferromagnetism at 5 K revealing the coercive field of ∼110 Oe for as grown sample and 360, 1035 Oe for samples annealed at 700, 800 $^{\circ}C$, respectively. Our experimental evidence suggests that ferromagnetic precipitates of a manganese oxide may be responsible for the observed ferromagnetic behaviors of the film.he film.

• Polymer(Korea)
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• v.36 no.4
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• pp.486-493
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• 2012

Photocurable sulfonated polyimide (SPI) polyelectrolyte containing chalcone group was prepared and fabricated on an alumina electrode pretreated with chalcone-containing silane-coupling agent. SPI films with bis(tetramethyl)ammonium 2,2'-benzidinedisulfonate ($Me_4N$-BDS)/4,4'-diaminochalcone (DAC)/pyromellitic dianhydride (PA)= 90/10/100 possessed very linear response(Y = -0.04528X+7.69446, $R^2=0.99675$) and showed resistance changing from 4.48 to $2.1k{\Omega}$ between 20 and 95 %RH. The response time for absorption and desorption measurements between 33 and 94 %RH% was about 79 s, which affirmed the high efficiency of crosslinked SPI film for rapid detection of humidity. A negative temperature coefficient showing $-0.49%RH/^{\circ}C$ was found and proper temperature compensation should be considered in future applications. Moreover, pretreatment of the substrates with chalcone-containing silane-coupling agent was performed to improve the water durability and the stability of the humidity sensors at a high humidity and a high temperature and long-term stability for 480 h. The crosslinked SPI films anchored to electrode substrate could be a promising material for the fabrication of efficient humidity sensors with superior characteristics compared to the commercially available sensors.