• Journal of electromagnetic engineering and science
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• v.18 no.2
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• pp.101-107
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• 2018

The impedance bandwidth and radiation characteristics of an aperture-coupled microstrip line-fed patch antenna (ACMPA) with a high permittivity (${\varepsilon}_r=10$) feed substrate suitable for integration with a monolithic microwave integrated circuit (MMIC) are investigated for various feed substrate thicknesses through an experiment and computer simulation. The impedance bandwidth of an ACMPA with a high permittivity feed substrate increases as the feed substrate thickness decreases. Furthermore, the front-to-back ratio of an ACMPA with a high permittivity feed substrate increases and the cross-polarization level decreases as the feed substrate thickness decreases. As the impedance bandwidth of an ACMPA with a high permittivity feed substrate increases and its radiation characteristics improve as the feed substrate thickness decreases, the ACMPA configuration becomes suitable for integration with an MMIC.

• Journal of Electrical Engineering and Technology
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• v.10 no.4
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• pp.1738-1745
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• 2015

Radiation characteristics of a probe-fed rectangular microstrip patch antenna printed on a finite grounded high permittivity substrate are investigated systematically for various square grounded dielectric substrate sizes with several thicknesses and dielectric constants by experiment and full wave simulation. The effect of the substrate size on the radiation characteristics of a rectangular patch antenna is mainly determined by the effective dielectric constant of surface waves on a grounded dielectric substrate. As the effective dielectric constant of surface waves increases, the substrate sizes for the maximum broadside gain and the required onset for a large magnitude of squint angle decrease, while the variations of the broadside gain, the front-to-back ratio, and the magnitude of squint angle versus the substrate size increase due to the increase of the power of the surface wave.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.11
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• pp.33-41
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• 2007

Effect of finite substrate plane on the radiation characteristics of microstrip patch antennas is investigated. The variation of the characteristics of the radiation pattern due to the change of the length of a substrate is much larger than that due to the change of the width of a substrate. As the thickness of a substrate increases, the characteristics of the radiation pattern reveal more sensitive for the change of the size of a substrate.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.2
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• pp.114-125
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• 2009

Effect of a finite square substrate plane on the radiation characteristics of a microstrip patch antenna is investigated. Effect of a finite square substrate plane on the resonance frequency and bandwidth is very small, while that on the radiation pattern is very large. The gain of front radiation and the direction of the maximum gain vary almost periodically with the length of a square substrate plane. The length of a square substrate plane for the maximum gam and the minimum gain of front radiation decrease as the electrical thickness of a substrate increases. The variation of the gain of front radiation with the length of a square substrate plane increases as the electrical thickness of a substrate increases. The variation of the radiation pattern with the length of a square substrate plane is almost determined by the electrical thickness of a substrate.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.6
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• pp.118-127
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• 2009

Effect of a finite square substrate plane on the radiation characteristics of a microstrip patch antenna is investigated. Excellent agreements between the simulation and measured results on the radiation characteristics of patch antennas for various square substrate thicknesses and sizes are obtained. The effect of a square substrate plane on the resonant frequency and bandwidth is small, while that on the radiation pattern is large. As the substrate thickness increases, the variations of the gain of the broadside radiation, the direction of the maximum radiation, and the radiation pattern increase for the variation of a substrate size. The maximum gain difference between the broadside radiation and back radiation and the large gain of broadside radiation are obtained when the length of a side of a square substrate plane is $0.8\;{\lambda}_0$.

• Electrical & Electronic Materials
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• v.9 no.2
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• pp.196-203
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• 1996

The highly c-axis oriented zinc oxide thin films were deposited on Sapphire(0001) substrates by reactive RF magnetron sputtering. The characteristics of zinc oxide thin films on RF power, substrate-target distance, and substrate temperature were investigated by XRD, SEM and EDX analyses. The physical characteristics of zinc oxide thin films changed with various deposition conditions. The higher substrate temperatures were, The better crystallinity of zinc oxide thin films. The highly c-axis oriented zinc oxide thin films were obtained at sputter pressure 5mTorr, rf power 200W, substrate temperature 350.deg. C, substrate-target distance 5.5cm. In these conditions, the resistivity of zinc oxide thin films deposited on pt/sapphire was 12.196*10$^{9}$ [.ohm.cm].

• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.217-221
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• 2016

In this work, open and short stubs that were fabricated on the silicon substrate and for which the periodically arrayed grounded-strip structure (PAGS) was employed were studied along with their basic RF characteristics for an applicability regarding the RF-matching components. The PAGS-employing open and short stubs showed losses that are much lower than that of the conventional stub on the silicon substrate. Concretely, the Q values of the open and short stubs are 9 and 10.2, respectively, while the Q value of the conventional open stub is 2.5. With the use of the PAGS-employing open and short stubs, a highly miniaturized harmonic-rejection filter was also fabricated on the silicon substrate. The filter exhibited a comparatively sound harmonic-suppression characteristic at n × 13 GHz, and its size is 0.1 mm², which is only 7% of the size of the conventional filter on the silicon substrate.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.6-12
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• 1995

High Tc superconducting YBa$_{2}$Cu$_{3}$$O_{7-x}$ thin films were prepared on various substrates by off-axis rf magnetron sputtering method to examine the substrate effects on the film structure and its R-T characteristics. The SEM analysis showed that the surface morphology of the grown YBa$_{2}$Cu$_{3}$O.sub 7-x/, film has different characteristic structure with different substrate used. The film on (100) SrTiO$_{3}$ substrate has critical current density of 3*10$^{5}$ A/cm$^{2}$ at 77K under zero magnetic field. The X-ray diffraction measurements revealed that the films on (100) SrTiO$_{3}$ substrate have mixed a-axis and c-axis normal to the substrate surface and the films on (100) MgO and ZrO$_{2}$/sapphire substrates have c-axis normal orientation to the substrate surface. However, YBa$_{2}$Cu$_{3}$$O_{7-x}$ films on (100) sapphire substrates showed no preferential orientation.ion.

• Journal of Electrical Engineering and Technology
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• v.13 no.1
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• pp.387-392
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• 2018

Static characteristics of SiC (silicon carbide) lateral p-i-n diodes implemented on semi-insulating substrate without an epitaxial layer are inVestigated. On-axis SiC HPSI (high purity semi-insulating) and VDSI (Vanadium doped semi-insulating) substrates are used to fabricate the lateral p-i-n diode. The space between anode and cathode ($L_{AC}$) is Varied from 5 to $20{\mu}m$ to inVestigate the effect of intrinsic-region length on static characteristics. Maximum breakdown Voltages of HPSI and VDSI are 1117 and 841 V at $L_{AC}=20{\mu}m$, respectiVely. Due to the doped Vanadium ions in VDSI substrate, diffusion length of carriers in the VDSI substrate is less than that of the HPSI substrate. A forward Voltage drop of the diode implemented on VDSI substrate is 12 V at the forward current of $1{\mu}A$, which is higher than 2.5 V of the diode implemented on HPSI substrate.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.100-105
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• 2020

Recently, as display and semiconductor devices have been miniaturized and highly integrated, there is a demand for optimization of the structural characteristics of the thin film accordingly. The sputtering device has the advantage of stably obtaining a desired thin film depending on the material selected for the target. However, due to the structural characteristics of the sputtering equipment, the structural characteristics of the film may be different depending on the incidence angle of the sputtering target material to the substrate. In this study, the characteristics of the thin film material according to the scattering angle of the target material and the incidence position of the substrate were studied to find the optimization design rule of the sputtering equipment. To this end, a Si thin film of 1 ㎛ or less was deposited on the Si(100) substrate, and then the microstructure, reflectance, surface roughness, and thin film crystallinity of the thin film formed for each substrate location were investigated. As a result of the study, it was found that as the sputter scattering angle increased and the substrate incident angle decreased, the gap energy along with the surface structure of the thin film increased from 1.47 eV to 1.63 eV, gradually changing to a non-conductive tendency.