• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1251-1253
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• 2004

Light diffraction on optically anisotropic substrates with the surface microrelief has been calculated by using the OAGSM method. Varying of the microrelief depth and material birefringence allows to realize different polarization state of the light beam transmitted or reflected by the substrate. The approach can be used to optimize the LCD backlight.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.8
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• pp.1-7
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• 1998

This paper reports a dispersion compensation technique to implement tje distortionless transmission line by satisfying the heaviside conditon. Because of the skin depth for aconductor, compensation condition is dependent on the freuqncy variation. For this reason, first, the resistance have been chaacterized in awide range of frequencies, and then found the effective conductivity of the substrate which satisfied the heaviside condition. The phase velocity and the characteristics impedance are prresented nearly constant over a wideband frequency range.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1995.10a
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• pp.1093-1097
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• 1995

A micro ion drag pump with planar electrodes on a glass substrate is fabricated and tested. the pump consisted of a 2- dimensional electrode pair array is driven by DC voltage using unipolar conduction. Ethy alcohol is pumped in both directions, and the flow rate and the pressure are measured, in channels of depth 100 .mu m or 200 .mu. m and width fixed at 3mm. It is found that the pump could be fabricated easily and at lower cost than the micro ion drag pumps previously investigated.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.2
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• pp.128-131
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• 2004

In this study Bosch etching process repeating etch and deposition by STS-ICP ASEHR was evaluated. Fundamentally etch depth changes were affected by thickness of deposited PR, $SiO_2$ and depth, and pattern size on the substrate. However etch rates were observed to be changed by variable parameters such as platen power, coil power, and process pressure. Etch rate showed $1.2\mu{m}/min$ and sidewall profile showed $90\pm0.2^\circ$ with platen power 12W, coil power 500W, and etch/passivation cycle 6/7sec. It was confirmed that this result was very typical to Bosch process utilizing ICP.

• Elastomers and Composites
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• v.58 no.1
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• pp.1-10
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• 2023

In this study, we investigate the liquid crystal (LC) alignment of LC cells created from plant-based polysaccharide derivatives, such as guar gum. Guar gum films exhibit satisfactorily high optical transparency in the visible light region (400-750 nm). For example, the transmittance of polyimide films, which are the most typically used LC alignment layers, is 87%, whereas that of guar gum films deposited onto a glass substrate at a wavelength of 550 nm is approximately 99%. The observed LC alignment depends on the rubbing depth. For example, an LC cell comprising a guar gum film fabricated via rubbing at rubbing depths of 0.1, 0.2, 0.3, and 0.4 mm exhibits a planar LC alignment, whereas it exhibits a vertical LC alignment at a rubbing depth of 0.5 mm. Additionally, the LC alignment is shown to be correlated with the total surface energy of the guar gum films. When the total surface energy of a rubbed guar gum film exceeds 58.10 mJ/m², an LC cell comprising the guar gum film exhibits a stable and vertical LC alignment. Therefore, guar gum can be used to realize the vertical alignment system of LC via a simple adjustment of the rubbing depth.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.6
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• pp.1047-1055
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• 2006

We patterned nano-width lines on a super hard bulk diamond substrate by varying the ion beam current and ion beam sources with a dual beam field ion beam (FIB). In addition, we successfully fabricated two-dimensional nano patterns and three-dimensional nano plate modules. We prepared nano lines on a diamond and a silicon substrate at the beam condition of 30 kV, 10 pA $\sim$ 5 nA with $Ga^+$ ion and $H_2O$ assisted ion sources. We measured each of the line-width, line-depth, etched line profiles, etch rate, and aspect ratio, and then compared them. We confirmed that nano patterning was possible on both a bulk diamond and a silicon substrate. The etch rate of $H_2O$ source can be enhanced about two times than that of Ga source. The width of patterns on a diamond was smaller than that on a silicon substrate at the same ion beam power The sub-100 nm patterns on a diamond were made under the charge neutralization mode to prevent charge accumulation. We successfully made a two-dimensional, 240 nm-width text of the 300-lettered Lord's Prayer on a gem diamond with 30 kV-30 pA FIB. The patterned text image was readable with a scanning electron microscope. Moreover, three dimensional nano-thick plate module fabrication was made successfully with an FIB and a platinum deposition, and electron energy loss spectrum (EELS) analysis was easily performed with the prepared nano plate module.

• Laser Solutions
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• v.17 no.1
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• pp.1-6
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• 2014

Indium tin oxide (ITO) is an important transparent conducting oxide (TCO). ITO films have been widely used as transparent electrodes in optoelectronic devices such as organic light-emitting devices (OLED) because of their high electrical conductivity and high transmission in the visible wavelength. Finding ways to control ITO micromachining depth is important role in the fabrication and assembly of display field. This study presented the depth control of ITO patterns on glass substrate using a femtosecond laser and slit. In the proposed approach, a gaussian beam was transformed into a quasi-flat top beam by slit. In addition, pattern of square type shaped by slit were fabricated on the surfaces of ITO films using femtosecond laser pulse irradiation, under 1030nm, single pulse. Using femtosecond laser and slit, we selectively controlled forming depth and removed the ITO thin films with thickness 145nm on glass substrates. In particular, we studied the effect of pulse number on the ablation of ITO. Clean removal of the ITO layer was observed when the 6 pulse number at $2.8TW/cm^2$. Furthermore, the morphologies and fabricated depth were characterized using a optical microscope, atomic force microscope (AFM), and energy dispersive X-ray spectroscopy (EDS).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.11
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• pp.683-687
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• 2017

We investigated the structure of an ultra-thin insulating board with low thermal conductivity along z-axis, which was based on the idea of void layers created during the glass infiltration process for the zero-shrinkage low-temperature co-fired ceramic (LTCC) technology. An alumina and four glass powders were chosen and prepared as green sheets by the tape casting method. After comparison of the four glass powders, bismuth glass was selected for the experiment. Since there is no notable reactivity between alumina and bismuth glass, alumina was selected as the supporting additive in glass layers. With 2.5 vol% of alumina powder, glass green sheets were prepared and stacked alternately with alumina green sheet to form the 'alumina/glass (including alumina additive)/alumina' structure. The stacked green sheets were sintered into an insulating substrate. Scanning electron microscopy revealed that the additive alumina formed supporting bridges in void layers. The depth and number of the stacking layers were varied to examine the insulating property. The lowest thermal conductivity obtained was 0.23 W/mK with a $500-{\mu}m-thick$ substrate.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.4
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• pp.51-56
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• 2012

In order to fabricate through-Si-vias for thermal vias by using wet etching process, anisotropic etching behavior of Si substrate was investigated as functions of concentration and temperature of TMAH solution in this study. The etching rate of 5 wt%, 10 wt%, and 25 wt% TMAH solutions, of which temperature was maintained at $80^{\circ}C$, was $0.76{\mu}m/min$, $0.75{\mu}m/min$, and $0.30{\mu}m/min$, respectively. With changing the temperature of 10 wt% TMAH solution to $20^{\circ}C$ and $50^{\circ}C$, the etching rate was reduced to $0.067{\mu}m/min$ and $0.233{\mu}m/min$, respectively. Through-Si-vias of $500{\mu}m$-depth could be fabricated by etching a Si substrate for 5 hours in 10 wt% TMAH solution at $80^{\circ}C$ after forming same via-pattern on each side of the Si substrate.

• Progress in Superconductivity
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• v.6 no.2
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• pp.133-137
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• 2005

We fabricated the Au/Ni template for YBCO coated conductors and evaluated texture formation and the microstructural evolution. The cube textured Ni substrate was fabricated by rolling and recrystallization annealing, and subsequently Au layer formed on the substrate by electroless-plating method. The texture was evaluated by pole-figure with x-ray goniometer with orientation distribution function (ODF) analysis. The surface roughness and grain boundary morphology of template were characterized by atomic force microscopy (AFM) We observed that Au layer deposited epitaxially on Ni substrate and formed a strong cube texture when plating time was optimized. The full-width at half-maximum (FWHM) was $8.4^{\circ}$ for out-of-plane and $9.98^{\circ}$ for in-plane texture for plating time of 30 min. Microstructural observation showed that the Au layer was homogeneous and dense without formation of crack/microcrack. In addition, we observed that root-mean-square (RMS) and depth of grain boundary were 14.6 nm and 160 $\AA$ for the Au layer, respectively, while those were 27.0 nm and 800 $\AA$ for the Ni substrate, indicating that the electoless-plated Au layer had relatively smooth surface and effectively mollified grain groove.