• Proceedings of the Korean Vacuum Society Conference
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• 2001.07a
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• pp.121-121
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.45.1-45
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• 1998

• Proceedings of the Korean Magnestics Society Conference
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• 2001.04a
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• pp.130-131
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• 2001

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.429-435
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• 1999

The $SrTiO_3$ thin films were prepared on Ag/TiN-coated and p-type bare Si(100) substrates by r.f. magnetron sputtering deposition technique. The electrical properties of the deposited films were investigated, which controlling deposition parameters such as substrate temperature and film thickness. The electrical properties ofthe $SrTiO_3$ films were measured using the capacitance-voltage(C-V) technique. The thickness dependence of the electrical properties of the $SrTiO_3$ films was analyzed of the connection with the films in series. The substrate affected the crystal structure and texture characteristics of the $SrTiO_3$ films. The resistivity of the film, sandwiched between Al and Ag films was measured, as a function of the temperature.

• Journal of the Korean Ceramic Society
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• v.38 no.3
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• pp.218-224
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• 2001

Yttria-stabilized zirconia (YSZ) films were deposited with varying temperatures of ZrCl$_4$between 250~55$0^{\circ}C$ with YCl$_3$and the substrate at 100$0^{\circ}C$. Nanoamperes per square centimeter of the electric current were measured in the reactor during deposition and the current increased with increasing evaporation temperature of ZrCl$_4$. The zirconia nanometer size clusters were captured on the grid membrane near the substrate during the CVD process and observed by transmission electron microscopy (TEM). The deposition rate decreased with increasing evaporation temperature of ZrCl$_4$. A cauliflower-shaped structure was developed at 25$0^{\circ}C$ then gradually changed to a faceted-grain structure above 35$0^{\circ}C$. Dependence of the growth rate and the morphological evolution on the evaporation temperature of ZrCl$_4$was approached by the charged cluster model.

• Journal of Integrative Natural Science
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• v.3 no.1
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• pp.54-59
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• 2010

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $Eg(T)=1.8622eV-(5.23{\times}10^{-4}eV/K)T^2/(T+775.5K)$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.6.2-6.2
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• 2011

Block copolymer (BCP) self-assembly in a film geometry has recently been the focus of increased research interest due to their potential use as templates and scaffolds for the fabrication of nanostructured materials. The phase behavior in a thin film geometry that confines polymer chains to the interfaces will be influenced by the interfacial interactions at substrate/polymer and polymer/air and the commensurability between the equilibrium period (L0) of the BCP and the total film thickness. We investigated the phase transitions for the films of block copolymers (BCPs) on the modified surface, like the order-to-disorder transition (ODT) by in-situ grazing incidence small angle x-ray scattering (GISAXS) and transmission electron microscopy (TEM). The selective interactions on the surface by a PS-grafted substrate provide the preferential interactions with the PS component of the block, while a random copolymer (PS-r-PMMA) grafted substrate do the balanced interfacial interactions on the surface. The thickness dependence of order-to-disorder behavior for BCP films will be discussed in terms of the surface interactions.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.439-442
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• 2006

We evaluated a-Si:H TFTs fabricated on polyimide substrate (PI) at the highest temperature of $160^{\circ}C$ with uniaxial and tensile strain to imitate flexible display. With tensile strain, the threshold voltage of a-Si:H TFTs have positive shift due to extra dangling bond formation in a-Si:H layer. However, no significant degradation of the subthreshold swing and effective mobility with tensile strain of a-Si:H TFTs indicates the similar level of band tail state. The metal wire with the width of $10\;{\mu}m$ for connection on flexible substrate can sustain with curvature radius 2.5 cm.

• Journal of the Korean Ceramic Society
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• v.28 no.11
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• pp.859-864
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• 1991

High quality lead titanate thin films were fabricated by spin coating on a silicon substrate. The resulting dried gel layers were uniform in thickness through 2$\times$2 $\textrm{cm}^2$ area, and polycrystalline perovskite structures developed almost crack free with a heat treatment above 50$0^{\circ}C$ in films with thickness above 360 nm. Metastable pyrochlore structures were observed in films with thickness of 160 nm when heat treated at 500 and $600^{\circ}C$, but these structure did not appear in films with thickness of 360 nm. The thickness dependence in crystal structure of films was studied. by varying the substrate condition and analyzing the interface between the film and substrate. In native oxide films on silicon stbstrates, amorphous dried gel layers were heterogeneously nucleated. Metastable cubic pyrochlore structure could be crystallized in amorphous native oxide.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.357-363
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• 1996

The superconducting properties of YBa$_{2}$Cu$_{3}$$O_{7-x}$(YBaCuO) thin films prepared by laser ablation have been investigated. The x-ray diffraction patterns of the films were substantially different from one another. The Y and Ba oxides are formed by the collisions with oxygen molecules. On the other hand, the Cu oxide is mainly formed at initial stage of the laser irradiation. The YBaCuO films manufactured on MgO(100) substrate were indicated T$_{c}$(zero)=90 K, T$_{c}$(onset)=92 K, and J$_{c}$=3.5*10$^{5}$ A/cm$^{2}$(at 77.3K). The optimum conditions were found to be a substrate temperature of 710.deg. C, an energy density of 2 J/cm$^{2}$, and a target-substrate distance of 60mm in an oxygen partial pressure of 200 mTorr.0 mTorr.