• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.300-303
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• 2001

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_{2}O_{3}$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.80-84
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coeffi-cient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi\ulcornerO\ulcorner, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.94-97
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• 2005

Bismuth high Tc superconducting thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra low growth rate, and sticking processing of the respective elements are evaluated. The sticking processing of bismuth element in bismuth high Tc superconducting thin film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the bismuth phase formation in the co-deposition process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
• /
• pp.300-303
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• 2001

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.213-216
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• 1999

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristics temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$ from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.193-197
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.1
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• pp.1-5
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• 2015

For the special usage, the effort of developing AlN single crystals has been very hot in the world. The AlN-base UV LEDs are used on the field of sterilization, purification, curing and analyzing, which can advance human's living and medical processes etc.. AlN single crystals were grown by the PVT (Physical vapor transport) method. On the growing process, carbon crucibles with three different types such as normal size, taller than normal and wider than normal were used for comparison. The processing temperature was in the range of $1900{\sim}2100^{\circ}C$ and ambient pressure was 200~1 Torr. When the taller crucible was used, the sublimation mass was greater than normal dimension one but the best condition of growth changes widely. However the wider one gave much sublimation mass and growing condition was more stable than normal dimension. On limited growing furnace system, the changes of crucible dimension of PVT method provide the change of best condition for growth rate, as-grown crystal quality and growth condition stability.

• The Bulletin of The Korean Astronomical Society
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• v.44 no.1
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• pp.70.4-70.4
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• 2019

Complex organic molecules (COMs) are increasingly observed in the environs of young stellar objects (YSOs), including hot cores/corinos around high-mass/low-mass protostars and protoplanetary disks. It is widely believed that COMs are first formed in the ice mantle of dust grains and subsequently released to the gas by thermal sublimation at high temperatures (T>100 K) in strong stellar radiation fields. In this paper, we report a new mechanism that can desorb COMs from icy grain mantles at low temperatures (T<100K), which is termed rotational desorption. The rotational desorption process of COMs comprises two stages: (1) ice mantles on suprathermally rotating grains spun-up by radiative torques (RATs) are first disrupted into small fragments by centrifugal stress, and (2) COMs and water ice then evaporate rapidly from the tiny fragments (i.e., radius a <1nm) due to thermal spikes or enhanced thermal sublimation due to increased grain temperature for larger fragments (a>1 nm). We discuss the implications of rotational desorption for releasing COMs and water ice in the inner region of protostellar envelopes (hot cores and corinos), photodissociation regions, and protoplanetary disks (PPDs). In shocked regions of stellar outflows, we find that nanoparticles can be spun-up to suprathermal rotation due to supersonic drift of neutral gas, such that centrifugal force can be sufficient to directly eject some molecules from the grain surface, provided that nanoparticles are made of strong material. Finally, we find that large aggregates (a~ 1-100 micron) exposed to strong stellar radiations can be disrupted into individual icy grains via RAdiative Torque Disruption (RATD) mechanism, which is followed by rotational desorption of ice mantles and evaporation of COMs. In the RATD picture, we expect some correlation between the enhancement of COMs and the depletion of large dust grains in not very dense regions of YSOs.

• Journal of Powder Materials
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• v.27 no.3
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• pp.193-197
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• 2020

Porous Cu-14 wt% Co with aligned pores is produced by a freeze drying and sintering process. Unidirectional freezing of camphene slurry with CuO-Co₃O₄ powders is conducted, and pores in the frozen specimens are generated by sublimation of the camphene crystals. The dried bodies are hydrogen-reduced at 500℃ and sintered at 800℃ for 1 h. The reduction behavior of the CuO-Co₃O₄ powder mixture is analyzed using a temperature-programmed reduction method in an Ar-10% H₂ atmosphere. The sintered bodies show large and aligned parallel pores in the camphene growth direction. In addition, small pores are distributed around the internal walls of the large pores. The size and fraction of the pores decrease as the amount of solid powder added to the slurry increases. The change in pore characteristics according to the amount of the mixed powder is interpreted to be due to the rearrangement and accumulation behavior of the solid particles in the freezing process of the slurry.

• Journal of Powder Materials
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• v.12 no.5 s.52
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• pp.351-356
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• 2005

Nanoscale Al powder with thin layer of alumina was produced by Wire Electric Explosion (WEE) process. Spark-Plasma Sintering (SPS) was performed for the produced powder to confirm the effectiveness of SPS like so-called 'surface-cleaning effect' and so on. Crystallite size and alumina content of produced powder varied with the ratio of input energy to sublimation energy of Al wire ($e/e_s$): Increase in ($e/e_s$) resulted in the decrease of crystallite size and the increase of alumina content. Shrinkage curve during SPS process showed that the oxide surface layer could not be destroyed near the melting point of Al. It implied that there was not enough or no spark-plasma effect during SPS for Al/Alumina powder.