• 제목/요약/키워드: Sublimation process

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공증착법으로 제작한 BSCCO 초전도 박막의 부착계수 해석 (Analysis of Sticking Coefficient in BSCCO Superconductor Thin Film Fabricated by Co-deposition)

  • 안인순;천민우;박용필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.300-303
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    • 2001
  • BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_{2}O_{3}$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

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Evaluation of Sticking Coefficient in BSCCO Thin Film Fabricated by Co-sputtering

  • Lee, Hee-Kab;Park, Yong-Pil;Lee, Kwon-Hyun;Lee, Joon-Ung
    • 한국전기전자재료학회논문지
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    • 제13권1호
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    • pp.80-84
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    • 2000
  • BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coeffi-cient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi\ulcornerO\ulcorner, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

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Bi 고온 초전도 박막의 부착 공정 (Sticking processing of Bi high $T_c$ superconducting thin films)

  • 천민우;김태곤;박용필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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    • pp.94-97
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    • 2005
  • Bismuth high Tc superconducting thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra low growth rate, and sticking processing of the respective elements are evaluated. The sticking processing of bismuth element in bismuth high Tc superconducting thin film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the bismuth phase formation in the co-deposition process.

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공증착법으로 제작한 BSCCO 초전도 박막의 부착계수 해석 (Analysis of Sticking Coefficient in BSCCO Superconductor Thin Film Fabricated by Co-deposition)

  • 안인순;천민우;박용필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.300-303
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    • 2001
  • BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

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Bi-sticking Coefficient of Bi-superconducting Thin Film Prepared by IBS Method

  • Lee, Hee-Kab;Lee, Joon-Ung;Park, Yong-Pil
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 추계학술대회 논문집
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    • pp.213-216
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    • 1999
  • BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristics temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$ from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

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Sticking Coefficient in Bi-thin Film Prepared by IBS Method

  • Yang, Sung-Ho;Park, Yong-Pil;Chun, Min-Woo;Park, Sung-Gyun;Park, Woon-Shik
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.193-197
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    • 2000
  • BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

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AlN 단결정 성장에 관한 도가니 형태의 의존성에 관한 연구 (A study on the dependance of crucible dimension on AlN single crystal growth)

  • 인경필;강승민
    • 한국결정성장학회지
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    • 제25권1호
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    • pp.1-5
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    • 2015
  • AlN 단결정의 특별한 용도로 이를 개발하기 위한 노력이 전 세계적으로 매우 활발하게 이루어지고 있다. 이러한 AlN을 기반으로 하는 자외선 LED는 생활, 의학, 자동자 등에 유용한 용도로서 살균, 정화, 경화 및 분석 등 분야에 이용된다. 이에 실험을 통해 PVT법으로 카본 도가니를 사용하여 AlN 단결정을 성장시켰으며 실험 중 3가지 형태의 도가니를 이용하여 성장에 미치는 영향을 분석하였으며, 그 온도 조건은 $1900{\sim}2100^{\circ}C$이고 실험 압력으로는 1~200 Torr였다. 그 결과, 높이가 높은 형태의 도가니를 사용할 경우 증발량은 기준 형태보다 증가 하는데 그쳤다. 반면, 넓은 형태의 도가니는 더욱 많은 증발양의 증가를 보였으며, 기준 형태에 비하여 훨씬 안정하다는 것을 알았다. 또한, 제한된 크기의 도가니를 이용한 PVT법에서의 도가니 형태의 변화에 따른 결과는 성장률에 따른 최적 조건, 성장 결정의 품질변화 및 성장 조건 안정성에 영향을 주는 것을 알았다.

Discovery of a New Mechanism to Release Complex Molecules from Icy Grain Mantles around Young Stellar Objects

  • Hoang, Thiem;Tram, Le Ngoc
    • 천문학회보
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    • 제44권1호
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    • pp.70.4-70.4
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    • 2019
  • Complex organic molecules (COMs) are increasingly observed in the environs of young stellar objects (YSOs), including hot cores/corinos around high-mass/low-mass protostars and protoplanetary disks. It is widely believed that COMs are first formed in the ice mantle of dust grains and subsequently released to the gas by thermal sublimation at high temperatures (T>100 K) in strong stellar radiation fields. In this paper, we report a new mechanism that can desorb COMs from icy grain mantles at low temperatures (T<100K), which is termed rotational desorption. The rotational desorption process of COMs comprises two stages: (1) ice mantles on suprathermally rotating grains spun-up by radiative torques (RATs) are first disrupted into small fragments by centrifugal stress, and (2) COMs and water ice then evaporate rapidly from the tiny fragments (i.e., radius a <1nm) due to thermal spikes or enhanced thermal sublimation due to increased grain temperature for larger fragments (a>1 nm). We discuss the implications of rotational desorption for releasing COMs and water ice in the inner region of protostellar envelopes (hot cores and corinos), photodissociation regions, and protoplanetary disks (PPDs). In shocked regions of stellar outflows, we find that nanoparticles can be spun-up to suprathermal rotation due to supersonic drift of neutral gas, such that centrifugal force can be sufficient to directly eject some molecules from the grain surface, provided that nanoparticles are made of strong material. Finally, we find that large aggregates (a~ 1-100 micron) exposed to strong stellar radiations can be disrupted into individual icy grains via RAdiative Torque Disruption (RATD) mechanism, which is followed by rotational desorption of ice mantles and evaporation of COMs. In the RATD picture, we expect some correlation between the enhancement of COMs and the depletion of large dust grains in not very dense regions of YSOs.

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산화물 복합분말 첨가 Camphene 슬러리의 동결건조 공정에 의한 Cu-Co 복합계 다공체 제조 (Synthesis of Porous Cu-Co using Freeze Drying Process of Camphene Slurry with Oxide Composite Powders)

  • 이규휘;한주연;오승탁
    • 한국분말재료학회지
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    • 제27권3호
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    • pp.193-197
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    • 2020
  • Porous Cu-14 wt% Co with aligned pores is produced by a freeze drying and sintering process. Unidirectional freezing of camphene slurry with CuO-Co3O4 powders is conducted, and pores in the frozen specimens are generated by sublimation of the camphene crystals. The dried bodies are hydrogen-reduced at 500℃ and sintered at 800℃ for 1 h. The reduction behavior of the CuO-Co3O4 powder mixture is analyzed using a temperature-programmed reduction method in an Ar-10% H2 atmosphere. The sintered bodies show large and aligned parallel pores in the camphene growth direction. In addition, small pores are distributed around the internal walls of the large pores. The size and fraction of the pores decrease as the amount of solid powder added to the slurry increases. The change in pore characteristics according to the amount of the mixed powder is interpreted to be due to the rearrangement and accumulation behavior of the solid particles in the freezing process of the slurry.

Synthesis and Spark-plasma Sinetring of Nanoscale Al/alumina Powder by Wire Electric Explosion Process

  • Kim, Ji-Soon;Kim, H. T.;Illyin, A. P.;Kwon, Young-Soon
    • 한국분말재료학회지
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    • 제12권5호
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    • pp.351-356
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    • 2005
  • Nanoscale Al powder with thin layer of alumina was produced by Wire Electric Explosion (WEE) process. Spark-Plasma Sintering (SPS) was performed for the produced powder to confirm the effectiveness of SPS like so-called 'surface-cleaning effect' and so on. Crystallite size and alumina content of produced powder varied with the ratio of input energy to sublimation energy of Al wire ($e/e_s$): Increase in ($e/e_s$) resulted in the decrease of crystallite size and the increase of alumina content. Shrinkage curve during SPS process showed that the oxide surface layer could not be destroyed near the melting point of Al. It implied that there was not enough or no spark-plasma effect during SPS for Al/Alumina powder.