• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.435-436
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• 2008

This paper presents a dual band frequency synthesizer for GSM and Wideband CDMA which is designed in a standard 0.13um CMOS 1P6M process. The shared components include phase frequency detector (PFD), charge pump (CP), loop filter, integer frequency divider(128/129 DMP, 4bit PC, 3bit SC) and Low noise Ring-VCO. A high-speed low power dual modulus prescaler is proposed to operate up to 2.1GHz at 3.3V supply voltage with 2mW power consumption by simulation. The simulated phase noise of VCO is -101dBc/Hz at 200kHz offset frequency from 1.9GHz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.05a
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• pp.697-699
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• 2017

A novel structure of phase locked loop (PLL) which has small size with D Flip-Flop and sub charge pump has been proposed. The area of loop filter usually occupying the larger portion of the chip is minimized using a single small capacitor. It has been simulated and proved by HSPICE in a CMOS $0.18{\mu}m$ 1.8V process.

• Proceedings of the IEEK Conference
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• 2000.07b
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• pp.969-972
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• 2000

This paper proposes 1.5V-3GHz CMOS PLL with a new delay cell for operating in high frequency and multi chained two stage VCO to improve phase noise performance. The proposed multi-chained architecture is able to reduce a timing jitter or a transition spacing and the newly VCO is operating in high frequency. The PFD circuit designed to prevent fluctuation of charge pump circuit under the locking condition. Simulation results show that the tuning range of proposed VCO is wide at 1.8GHz-3.2Ghz and power dissipation is 0.6mW.

• Journal of IKEEE
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• v.24 no.3
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• pp.859-866
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• 2020

This paper proposes a 2-ch DC-DC converter with a wide-input voltage range from 2.9V~5.6V for wearable AMOLED displays. For positive voltage V_POS, a boost converter is designed using an over-charged voltage permissible circuit (OPC) which generates a normal output voltage even if over-input voltage is applied, and a SPWM-PWM dual mode with 3-segmented power transistors to improve efficiency at light load. For negative voltage V_NEG, a 0.5x regulated inverting charge pump is designed to increase power efficiency. The proposed DC-DC converter was designed using a 0.18-㎛ BCDMOS process. Simulation results show that the proposed DC-DC converter generates V_POS voltages of 4.6 V and V_NEG voltage of -0.6V~-2.3V for input voltage of 2.9V to 5.6V. In addition, it has power efficiency of 49%~92%, output ripple voltage has less than 20 mV for load current range of 1 mA~70 mA.