• Applied Chemistry for Engineering
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• v.34 no.1
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• pp.80-85
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• 2023

New yellow quinoline-dione dye derivatives were designed and synthesized for use in image sensor color filters. The synthesized compounds have a basic chemical structure composed of quinoline and dione groups. New materials were evaluated on the basis of their optical and thermal properties under conditions mimicking those of a commercial device fabrication process. A comparison of their related performances revealed that, between the two prepared compounds, 2-(3-hydroxyquinolin-2(1H)-ylidene)-1H-indene-1,3(2H)-dione (HQIDO) exhibited the superior performance as an image sensor color filter material, including a solubility greater than 0.5 wt% in propylene glycol monomethyl ether acetate solvent and a high decomposition temperature of 298 ℃, respectively. The results suggest that HQIDO can be used as a yellow dye additive in an image sensor colorant.

• Journal of the Korean Magnetics Society
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• v.12 no.1
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• pp.1-6
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• 2002

Al$\^$3+/ substituted garnet Y$_3$Fe$\_$5-x/Al$\_$x/O$\_$12/ (x=0.0, 0.25, 0.5, 0.75, 1.0) was fabricated by sol-gel method. The crystallographic and magnetic properties of Y$_3$Fe$\_$5-x/Al$\_$x/O$\_$12/ have been studied with Mossbauer spectroscopy, x-ray diffraction (XRD), thermogravimetry analysis (TGA), differential thermal analysis (DTA), and vibrating samples magnetometer (VSM). The crystal structure of Y$_3$Fe$\_$5/O$\_$12/ is found to be a cubic with the lattice constant a$\_$0/= 12.381$\pm$0.005 $\AA$. The lattice constants a$\_$0/ decreases linearly from 12.381 to 12.304 A as the Al concentration (x) increases from x=0.0 to 1.0. Mossbauer spectra of measured at Y$_3$Fe$\_$5-x/A1$\_$x/O$\_$12/ various absorber temperatures of 13 to 600 K. Mossbauer spectrum for x = 0.0 is consist of well resolved two sets of six line patterns. While with increasing Al concentration outer sextet patters, which is originating from octahedral sites, broadens widely. These phenomena are interpreted in terms of random probability distributions of Fe$\^$3+/ and Al$\^$3+/ in tetrahedral site.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.7
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• pp.3252-3260
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• 2012

2,2'-Bipyridinium chlorochromate[$C_{10}H_8N_2HCrO_3Cl$] was synthesized by the reaction of 2,2'- bipyridine with chromium(VI) trioxide in 6M HCl. The structure was characterized by IR and ICP analysis. The oxidation of benzyl alcohol using 2,2'-bipyridinium chlorochromate in various solvents showed that the reactivity increased with the increase in the order of the dielectric constant(${\varepsilon}$), in the order: cyclohexene< chloroform$p-CH_3$, H, m-Br, $m-NO_2$) in N,N'-dimethylformamide. Electron-donating substituents accelerated the reaction, whereas electron acceptor groups retarded the reaction. The Hammett reaction constant(${\rho}$) was -0.64(303K). The oxidation reactivity of alcohols can be a useful factor to study about physical properties such as thermal stability, when the polysilsesquioxane solution is ready for an applying coating agent. The observed experimental data was used to rationalized the hydride ion transfer in the rate-determining step.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.459-467
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• 2009

$Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were prepared on indium-tin-oxide(ITO)-coated glass substrates by using thermal evaporation. The crystallization was achieved by annealing the as-deposited films in flowing nitrogen. X-ray diffraction spectra showed that the $Cd_2GeSe_4$ and the $Cd_2GeSe_4:Co^{2+}$ films were preferentially grown along the (113) orientation. The crystal structure was rhomohedral(hexagonal) with lattice constants of $a=7.405\;{\AA}$ and $c=36.240\;{\AA}$ for $Cd_2GeSe_4$ and $a=7.43\;{\AA}$ and $c=36.81\;{\AA}$ for $Cd_2GeSe_4:Co^{2+}$ films. From the scanning electron microscope images, the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were plated, and the grain size increased with increasing annealing temperature. The optical energy band gap, measured at room temperature, of the as-deposited $Cd_2GeSe_4$ films was 1.70 eV and increased to about 1.74 eV and of the as-deposited $Cd_2GeSe_4:Co^{2+}$ films was 1.79 eV and decreased to about 1.74 eV upon annealing in flowing nitrogen at temperatures from $200^{\circ}C$ to $500^{\circ}C$. The dynamical behavior of the charge carriers in the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were investigated by using the photoinduced discharge characteristics technique.

• Analytical Science and Technology
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• v.22 no.4
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• pp.285-292
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• 2009

It has been observed that, after long term storage, some ammunitions are misfired by tamping (combustionstopping) due to aging of the chemicals loaded in the ammunitions. Used in ammunitions are percussion powder which provides the initial energy, igniter which ignites the percussion powder, and a delay system that delays the combustion for a period of time. The percussion powder is loaded first, followed by the igniter and then the delay system, and the ammunitions explode by the energy being transferred in the same order. Tamping occurs by combustion-stopping of the igniter or insufficient energy transfer from the igniter to the delay system or the combustion-stopping of the delay system, which are suspected to be caused by low purity of the components, inappropriate mixing ratio, size distribution of particulate components, type of the binder, blending method, hydrolysis by the humidity penetrated during the long term storage, and chemical changes of the components by high temperature. Goal of this study is to find the causes of the combustion-stopping of the igniter and the delay system of the ammunitions after long term storage. In this study, a method was developed for testing of the combustion-stopping, and the size distributions of the particulate components were analyzed with field-flow fractionation (FFF), and then the mechanism of chemical change during long term storage was investigated by thermal analysis (differential scanning calorimetry), XRD (X-ray diffractometry), and XPS (X-ray photoelectron spectroscopy). For the ignition system, M (metal)-O (oxygen) and M-OH peaks were observed at the oxygen's 1s position in the XPS spectrum. It was also found by XRD that $Fe_3O_4$ was produced. Thus it can be concluded that the combustion-stopping is caused by reduction in energy due to oxidation of the igniter.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• Journal of the Korean Electrochemical Society
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• v.24 no.3
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• pp.52-64
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• 2021

The effect of Fe and BO₃ doping on structure, thermal, and electrical properties of Li_1+xFe_xTi_2-x(PO₄)_3-y(BO₃)_y (x = 0.2, 0.5)-based glass and glass ceramics was investigated. In addition, their crystallization behavior during sintering and ionic conductivity were also investigated in terms of sintering temperature. FT-IR and XPS results indicated that Fe²⁺ and Fe³⁺ ions in Li_1+xFe_xTi_2-x(PO₄)_3-y(BO₃)_y glass worked as a network modifier (FeO₆ octahedra) and also as a network former (FeO₄ tetrahedra). In the case of the glass with low substitution of BO₃, boron formed (PB)O₄ network structure, while boron preferred BO₃ triangles or B₃O₃ boroxol rings with increasing the BO₃ content owing to boic oxide anomaly, which can result in an increased non-bridging oxygen. The glass transition temperature (GTT) and crystallization temperature (CT) was lowered as the BO₃ substitution was increased, while Fe²⁺ lowered the GTT and raised the CT. The ionic conductivity of Li_1+xFe_xTi_2-x(PO₄)_3-y(BO₃)_y glass ceramics were 8.85×10^-4 and 1.38×10^-4S/cm for x = 0.2 and 0.5, respectively. The oxidation state of doped Fe and boric oxide anomaly were due to the enhanced lithium ion conductivity of glass ceramics.

• Journal of the Korean Magnetics Society
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• v.23 no.4
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• pp.122-125
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• 2013

Perpendicular magnetic anisotropy (PMA) is the phenomenon of magnetic thin film which is preferentially magnetized in a direction perpendicular to the film's plane. Amorphous multilayer with PMA has been studied as the good candidate to realization of high density STT-MRAM (Spin Transfer Torque-Magnetic Random Access Memory). The current issue of high density STT-MRAM is a decrease in the switching current of the device and an application of amorphous materials which are most suitable devices. The amorphous ferromagnetic material has low saturated magnetization, low coercivity and high thermal stability. In this study, we presented amorphous ferromagnetic multilayer that consists of an amorphous alloy CoSiB and a nonmagnetic material Pd. We investigated the change of PMA of the $[CoSiB\;t_{CoSiB}/Pd\;1.3nm]_5$ multilayer ($t_{CoSiB}$ = 0.1, 0.2, 0.3, 0.4, 0.5, 0.6 nm, and $t_{Pd}$ = 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6 nm) and $[CoSiB\;0.3nm/Pd\;1.3nm]_n$ multilayer (n = 3, 5, 7, 9, 11, 13). This multilayer is measured by VSM (Vibrating Sample Magnetometer) and analyzed magnetic properties like a coercivity ($H_c$) and a magnetization ($M_s$). The coercivity in the $[CoSiB\;t_{CoSiB}\;nm/Pd\;1.3nm]_5$ multi-layers increased with increasing $t_{CoSiB}$ to reach a maximum at $t_{CoSiB}$ = 0.3 nm and then decreased for $t_{CoSiB}$ > 0.3 nm. The lowest saturated magnetization of $0.26emu/cm^3$ was obtained in the $[CoSiB\;0.3nm/Pd\;1.3nm]_3$ multilayer whereas the highest coercivity of 0.26 kOe was obtained in the $[CoSiB\;0.3nm/Pd\;1.3nm]_5$ mutilayer. Additional Pd layers did not contribute to the perpendicular magnetic anisotropy. The single domain structure evolved in to a striped multi-domain structure as the bilayer repetition number n was increased above 7 after which (n > 7) the hysteresis loops had a bow-tie shapes.