• Title/Summary/Keyword: Structure Modification

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Design and Implementation of Video File Structure Analysis Tool for Detecting Manipulated Video Contents

  • Choi, Yun-Seok
    • International Journal of Internet, Broadcasting and Communication
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    • v.10 no.3
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    • pp.128-135
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    • 2018
  • The various video recording device, like car black box and cctv, are used currently and video contents are used as evidence of traffic accidents and scenes of crime. To verify integrity of video content, there are various study on manipulated video content analysis. Among these studies, a study based on analysis of video file structure and its variables needs a tool which can be used to analyze file structure and extract interested attributes. In this paper, we proposed design and implementation of an analyzing tool which visualizes video file structure and its attributes. The proposed tool use a model which reflects commonality of various video container format, so it is available to analyze video structure with regardless of the video file types. And the tool specifies interested file structure properties in XML and therefore we can change target properties easily without modification of the tool.

A Correlation Analysis between Physical Disturbance and Fish Habitat Suitability before and after Channel Structure Rehabilitation (하천구조 개선에 따른 어류 서식적합도와 물리적 교란의 상관분석)

  • Choi, Heung Sik;Lee, Woong Hee
    • Ecology and Resilient Infrastructure
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    • v.2 no.1
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    • pp.33-41
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    • 2015
  • In this study, an optimal improvement method of stream channel structure is presented for the enhancement of fish habitat suitability by genetic algorithm. The correlation between fish habitat suitability and physical disturbance in stream is analyzed according to the changes of hydraulic characteristics by channel structure rehabilitation. Zacco koreanus which is an indicator fish of the soundness of aquatic ecosystem was selected as a restoration target species by investigating the community characteristics of fish fauna and river environments in Wonju stream. The habitat suitability is investigated by PHABSIM with the habitat suitability index of Zacco koreanus. Hydraulic analysis by HEC-RAS and physical disturbance evaluation in stream are carried out. The optimal channel width modified for the enhancement of fish habitat suitability is provided. The correlation analysis between habitat suitability and physical disturbance with the change of hydraulic characteristics by channel modification showed that the proper channel modification enhanced fish habitat suitability and mitigated physical disturbance in the stream. The improvement of physical disturbance score by the channel structure rehabilitation for the enhancement of fish habitat suitability was confirmed in this study.

A Hierarchical and Incremental MOS Circuit Extractor (계층 구조와 Incremental 기능을 갖는 MOS 회로 추출기)

  • 이건배;정정화
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.8
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    • pp.1010-1018
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    • 1988
  • This paper proposes a MOS circuit extractor which extracts a netlist from the hierarchical mask information, for the verification tools. To utilize the regularity and the simple representation of the hierarchical circuit, and to reduce the debug cycle of design, verification, and modification, we propose a hierarvhical and incremental circuit extraction algorithm. In flat circuit extraction stage, the multiple storage quad tree is used as an internal data structure. Incremental circuit extraction using the hierarchical structure is made possible, to reduce the re-extraction time of the modified circuit.

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Enhanced Parallel-Branch Spiral Inductors (병렬분기 방법을 이용한 박막 나선 인덕터의 특성 향상)

  • 서동우;민봉기;강진영;백문철
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.89-93
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    • 2002
  • In the present paper we suggested a parallel-branch structure of aluminum spiral inductor for the use of RF integrated circuit at 1∼3 GHz. The inductor was implemented on P-type silicon wafer (5∼15 Ω-cm) under the standard CMOS process and it showed a improved quality(Q) factor by more than 10% with no degradation of inductance. The effect of the structure modification on the Q factor and the inductance was scrutinized comparing with those of the conventional spiral inductors.

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Influence of Preparation Conditions on the Formation of Copper (II) Architectures with Pyrazine-2,3,5-tricarboxylic Acid

  • Wang, Feng-Qin;Lin, Shu;Guo, Ming-Lin;Xu, Jun-Jian;Wang, Xiao-Qing;Zhao, Yong-Nan
    • Bulletin of the Korean Chemical Society
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    • v.32 no.7
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    • pp.2351-2357
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    • 2011
  • Three new metal-organic copper(II) complexes, $[Cu(H_2PZTC)_2]_n{\cdot}2nH_2O$ (1), $[Cu(HPZTC){\cdot}2H_2O]_n{\cdot}2nH_2O$ (2), and $Cu_2[(PZHD)(OH)(H_2O)_2]_n$ (3) ($H_3PZTC$ = pyrazine-2,3,5-tricarboxylic acid, $PZHD^{3-}$ = 2-hydroxypyrazine-3,5-dicarboxylate), have been synthesized from $Cu(II)/H_3PZTC$ system under different synthetic conditions, and characterized by single-crystal X-ray diffraction, elemental analysis, IR spectroscopy and thermogravimetric analysis. In complexes 1 and 2, $H_3PZTC$ ligands loose one and two protons, which were transformed into $H_2PZTC^-$ anion and $HPZTC^{2-}$ dianion under different preparation condition, respectively. Furthermore, two ligands coordinate with Cu(II) cations in different modes, leading to the formation of the different chain structures. In complex 3, $H_3PZTC$ ligand was converted into a new ligand-PZHD by in situ decarboxylation and hydroxylation under a higher pH value than that for complexes 1 and 2. PZHD ligands link the Cu(II) cations to form a 2D layer structure. These results demonstrate that the preparation conditions, including pH value and reaction temperature etc, play an important role in the construction of complexes based on $H_3PZTC$ ligand.

Improved Luminescent Characterization and Synthesis of InP/ZnS Quantum Dot with High-Stability Precursor (고 안정성 전구체를 사용한 InP/ZnS 반도체 나노입자 합성 및 발광 특성 향상)

  • Lee, Eun-Jin;Moon, Jong-Woo;Kim, Yang-Do;Shin, Pyung-Woo;Kim, Young-Kuk
    • Journal of Powder Materials
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    • v.22 no.6
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    • pp.385-390
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    • 2015
  • We report a synthesis of non-toxic InP nanocrystals using non-pyrolytic precursors instead of pyrolytic and unstable tris(trimethylsilyl)phosphine, a popular precursor for synthesis of InP nanocrystals. In this study, InP nanocrystals are successfully synthesized using hexaethyl phosphorous triamide (HPT) and the synthesized InP nanocrystals showed a broad and weak photoluminescence (PL) spectrum. As synthesized InP nanocrystals are subjected to further surface modification process to enhance their stability and photoluminescence. Surface modification of InP nanocrystals is done at $230^{\circ}C$ using 1-dodecanethiol, zinc acetate and fatty acid as sources of ZnS shell. After surface modification, the synthesized InP/ZnS nanocrystals show intense PL spectra centered at the emission wavelength 612 nm through 633 nm. The synthesized InP/ZnS core/shell structure is confirmed with X-ray diffraction (XRD) and Inductively Coupled Plasma - Atomic Emission Spectrometer (ICP-AES). After surface modification, InP/ZnS nanocrystals having narrow particle size distribution are observed by Field Emission Transmission Electron Microscope (FE-TEM). In contrast to uncapped InP nanocrystals, InP/ZnS nanocrystals treated with a newly developed surface modified procedure show highly enhanced PL spectra with quantum yield of 47%.

Pushover Analysis of a Five-Story Steel Framed Structure Considering Beam-to-Column Connection (보-기둥 접합부를 고려한 5층 철골골조구조물의 비탄성 정적해석)

  • Kang, Suk-Bong;Lee, Jae-Hwan
    • Journal of Korean Society of Steel Construction
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    • v.22 no.2
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    • pp.129-137
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    • 2010
  • In this study, a five-story steel frame was designed in accordance with KBC2005 to evaluate the effect of the beam-column connection on the structural behavior. The connections were designed as a fully rigid connection and as a semirigid connection. A fiber model was utilized to describe the moment-curvature relationship of the steel beam and column, and a three-parameter power model was adopted for the moment-rotation angle of the semirigid connection. To evaluate the effects of higher modes on structural behavior, the structure was subjected to a KBC2005-equivalent lateral load and lateral loads considering higher modes. The structure was idealized as a separate 2D frame and as a connected 2D frame. The pushover analysis of 2D frames for the lateral load yielded the top displacement-base shear force, design coefficients such as overstrength factor, ductility ratio, and response modification coefficient, demanded ductility ratio for the semirigid connection,and distribution of plastic hinges. The sample structure showed a greater response modification coefficient than KBC2005, the higher modes were found to have few effects on the coefficient, and the lateral load of KBC2005 was found to be conservative. The TSD connection was estimated to secure economy and safety in the sample structure.

Design of a radiation-tolerant I-gate n-MOSFET structure and analysis of its characteristic (I 형 게이트 내방사선 n-MOSFET 구조 설계 및 특성분석)

  • Lee, Min-woong;Cho, Seong-ik;Lee, Nam-ho;Jeong, Sang-hun;Kim, Sung-mi
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.20 no.10
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    • pp.1927-1934
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    • 2016
  • In this paper, we proposed a I-gate n-MOSFET (n-type Metal Oxide Semiconductors Field Effect Transistor) structure in order to mitigate a radiation-induced leakage current path in an isolation oxide interface of a silicon-based standard n-MOSFET. The proposed I-gate n-MOSFET structure was designed by using a layout modification technology in the standard 0.18um CMOS (Complementary Metal Oxide Semiconductor) process, this structure supplements the structural drawbacks of conventional radiation-tolerant electronic device using layout modification technology such as an ELT (Enclosed Layout Transistor) and a DGA (Dummy Gate-Assisted) n-MOSFET. Thus, in comparison with the conventional structures, it can ensure expandability of a circuit design in a semiconductor-chip fabrication. Also for verification of a radiation-tolerant characteristic, we carried out M&S (Modeling and Simulation) using TCAD 3D (Technology Computer Aided Design 3-dimension) tool. As a results, we had confirmed the radiation-tolerant characteristic of the I-gate n-MOSFET structure.