• Korean Journal of Materials Research
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• v.23 no.3
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• pp.155-160
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• 2013

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93) were prepared on glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substrate temperature of $350^{\circ}C$. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, $Ga_2O_3$, or $ZnGa_2O_4$. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputtering power increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as the sputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin films showed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power. MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrier concentration ($4.71{\times}10^{20}cm^{-3}$), charge carrier mobility ($10.2cm^2V^{-1}s^{-1}$) and a minimum resistivity ($1.3{\times}10^{-3}{\Omega}cm$). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80 % in the visible region and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from 270 nm to 340 nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from 3.74 eV to 3.92 eV with the change in the sputtering power.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.34-39
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• 2006

Pure and Fe-doped CuO thin-film and powder samples were prepared using a sol-gel method. Undoped CuO films exhibited monoclinic structure and p-type electrical conductivity $(\~10^{-2}\;{\Omega^{-1}\;cm^{-1}$ due to copper deficiency. On the other hand, CuO: Fe films were found to be insulating and Li doping on the films led to a restoration of p-type conductivity and a ferromagnetic hysteresis behaviour at room temperature. The observed properties far the CuO : Fe, Li films can be explained in terms of hole creation by substitution of $Li^+$ for $Cu^{2+}$ sites and mediation of long-range interactions between $Fe^{3+}$ ions by the $Li^+$-induced defect states. CuO: Fe powders exhibited a ferromagnetism at room temperature with its strength being dependent on post-annealing temperature. Mossbauer measurements on the CuO: Fe films and powders revealed that the octahedral $Cu^{2+}$ sites are mostly substituted by $Fe^{3+}$ ions.

• Journal of the Korea Concrete Institute
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• v.15 no.3
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• pp.400-408
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• 2003

Chloride ion inside concrete destroys the so-called passive film surrounding reinforcing bars inside concrete so that the so-called salt attack accelerates corrosion which is the most critical factor for durability as well as structural safety of reinforced concrete structures. Recently, as a solution of the salt attack, the ground granulated blast-furnace slag(GGBFS) have been used as binder or blended cement more extensively. In this paper, characteristics of chloride ion diffusion for the GGBFS concrete, which is known to possess better resistance to damage due to the chloride ion penetration than ordinary portland cement(OPC) concrete possesses, are analyzed and a chloride ion diffusion model for the GGBFS concrete is proposed by modifying an existing diffusion model for the OPC concrete. The proposed model is verified by comparing diffusion analysis results using the model accelerated chloride penetration test results for concrete specimens as well as field test results for an RC bridge pier. Then, an optimal resistance condition to chloride penetration for the GGBFS concrete is obtained according to degrees of fineness and replacement ratios of the GGBFS concrete. The result shows that the GGBFS concrete has better resistance to chloride ion penetration than OPC concrete has and the resistance is more affected by the replacement ratio than the degree of fineness of the GGBFS.

• The Journal of Korean Academy of Prosthodontics
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• v.18 no.1
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• pp.15-35
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• 1980

The purpose of this study was to investigate stresses in the various components of fixed partial dentures restoring the posterior teeth of the lower jaw, and to measure quantitatively the effects of certain modifications in structural design on the stresses in the restorations using two-dimensional photoelasticity. Two-dimensional photoelastic methods were used in this study. Several models of fixed partial dentures were constructed. Shoulder less margins and anatomic occlusal reduction were incorporated in Model 1. Rounded shoulders and flat occlusal reduction were incorporated in Model 2, while Model 3 was a cantilever fixed partial denture. Other similar fixed partial dentures were constructed with V and U notches deliverately included in the region of the fixed joints for comparative reasons. The birefringent materials used in this study were PSM-1 and PSM-5 in standard sheets. PSM-1 was used for constructing the substructure, and PSM-5 was used in making the components of the fixed partial dentures. The two materials were used in the construction of composite photoelastic models. Improved artificial stone was used to represent dental cement in luting the composite photoelastic models. Static loading procedures were used at preplanned sites to represent occlusal loads in the mouth. 35 mm color and B/W film were used to record isochromatics in accordance with photoelastic procedures. Data reduction was performed using the grid method, which helped in, the mathematical integration procedure (Shear difference method) to separate the principal stresses. The results were as follows. 1. Fixed partial dentures do not function in bending as a symmetrical beam. Alternate areas of tension and compression were demonstrated when multiple contact loading was used. 2. The weakest part in posterior fixed partial dentures is the fixed joint. 3. (1) Models I and modified Model I were loaded on the pontic using a 50 pound vertical static load. The shear stress near the posterior fixed joint in Model 1 (U notches) was+129.4 p.s.i., and at the same fixed joint in modified Model 1 (V notches) was+239.4 p.s.i. The concentration of stress in fixed joint was reduced by 50% when U notches replaced the V notches. (2) Modified Model 2 was loaded using a multiple contact loader at a total load of 125 pounds. The difference between the principal stresses (${\sigma}_1-{\sigma}_2$), shear stress, at the V notches was+600 p.s.i., and at the U notches was+3l7 p.s.i. The shear stress was reduced by 50% when U notches replaced the V notches. V-grooves at the fixed joints should be avoided, and should be replaced by regular shaped U-grooves. 4. Cantilever fixed partial dentures had much higher stresses at the fixed joint than fixed partial dentures that were attached at both ends.

• Journal of the Korean Magnetics Society
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• v.9 no.2
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• pp.111-120
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• 1999

The effects of annealing in rotating magnetic field after deposition on electromagnetic properties of $Co_{82}Zr_6Mo_{12}$ thin (200~1200 $\AA$) films prepared by RF-magnetron sputtering were investigated in terms of microstructure and surface morphology. The coercivity decreases, but $4{\pi}M_5$ does not change with increasing the film thickness. The coercivity of the films was decreased below 300 $^{\circ}C$ due to stress relief and decreasing the surface roughness, while increased at 400 $^{\circ}C$ due to partial grain growth. And then, $4{\rho}M_5$ was almost independent of annealing temperatures below 200 $^{\circ}C$, but increased from 7.4 kG to 8.0 kG at 300 $^{\circ}C$ and at 400 $^{\circ}C$, which was caused by precipitation and growth of fine Co particles in the films. The electrical resistivity of films was decreased with increasing annealing temperatures and the magnetoresistance was a negative value of nearly 0 $\mu$$\Omega$cm. After annealing at 300 $^{\circ}C$, maximum effective permeability was 1200 to the hard axis of the thin films according to high frequency change. Considering the practical application of biasing layers of the films for magnetoresistive heads, optimal annealing conditions was obtained after one hour annealing at 300 $^{\circ}C$ in 400 Oe rotating magnetic field.

• KEPCO Journal on Electric Power and Energy
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• v.1 no.1
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• pp.175-180
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• 2015

A facile soft chemical synthesis route is used to grow nano-buds of copper hydroxide [$Cu(OH)_2$] thin films on stainless steel substrate[SS]. Besides different chemical methods for synthesis of $Cu(OH)_2$ nanostructure, the chemical bath deposition (CBD) is attractive for its simplicity and environment friendly condition. The structural, morphological, and electro-chemical properties of $Cu(OH)_2$ thin films are studied by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), cyclic voltammetry (CV) and galvanostatic charge-discharge (GCD) measurement techniques. The results showed that, facile chemical synthesis route allows to form the polycrystalline, granular nano-buds of $Cu(OH)_2$ thin films. The electrochemical properties of $Cu(OH)_2$ thin films are studied in an aqueous 1 M KOH electrolyte using cyclic voltammetry. The sample exhibited supercapacitive behavior with $340Fg^{-1}$ specific capacitance. Moreover, electrochemical capacitive measurements of $Cu(OH)_2/SS$ electrode exhibit a high specific energy and power density about ${\sim}83Wh\;kg^{-1}$ and ${\sim}3.1kW\;kg^{-1}$, respectively, at $1mA\;cm^{-2}$ current density. The superior electrochemical properties of copper hydroxide ($Cu(OH)_2/SS$) electrode with nano-buds like structure mutually improves pseudocapacitive performance. This work evokes scalable chemical synthesis with the enhanced supercapacitive performance of $Cu(OH)_2/SS$ electrode in energy storage devices.

• Korean Journal of Materials Research
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• v.27 no.12
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• pp.705-709
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• 2017

The electronic and optical characteristics of molybdenum disulphide ($MoS_2$) film significantly vary with its thickness, and thus a rapid and accurate estimation of the number of $MoS_2$ layers is critical in practical applications as well as in basic researches. Various existing methods are currently available for the thickness measurement, but each has drawbacks. Transmission electron microscopy allows actual counting of the $MoS_2$ layers, but is very complicated and requires destructive processing of the sample to the point where it will no longer be useable after characterization. Atomic force microscopy, particularly when operated in the tapping mode, is likewise time-consuming and suffers from certain anomalies caused by an improperly chosen set point, that is, free amplitude in air for the cantilever. Raman spectroscopy is a quick characterization method for identifying one to a few layers, but the laser irradiation causes structural degradation of the $MoS_2$. Optical microscopy works only when $MoS_2$ is on a silicon substrate covered with $SiO_2$ of 100~300 nm thickness. The last two optical methods are commonly limited in resolution to the micrometer range due to the diffraction limits of light. We report here a method of measuring the distribution of the number of $MoS_2$ layers using a low voltage field emission electron microscope with acceleration voltages no greater than 1 kV. We found a linear relationship between the FESEM contrast and the number of $MoS_2$ layers. This method can be used to characterize $MoS_2$ samples at nanometer-level spatial resolution, which is below the limits of other methods.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.215-221
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• 2005

Thermoelectric bismuth telluride thin films were prepared on $SiO_{2}$/Si substrate with co-sputtering of bismuth and tellurium targets. The effects of deposition temperature on surface morphology, crystallinity and electrical transport properties were investigated. Hexagonal crystallites were clearly visible at the surface of films deposited above $290 ^{\circ}C$. Change of dominant phase from rhombohedral $Bi_2Te_3$ to hexagonal BiTe was confirmed with X-ray diffraction analysis. The deviation from stoichiometric composition at high deposition temperature resulted in the change of structural and electrical characteristics. Seebeck coefficients of all samples have negative value, indicating the prepared $Bi_XTe_Y$ films are n-type thermoelectric. Optimum of Seebeck coefficient and power factor were obtained at the deposition temperature of $225 \^{circ}$C (about -55 $\mu$V/K and $3\times10^{-4}$ W/$k^{2}$m, respectively). Deterioration of thermoelectric properties at higher temperature.

• Horticultural Science & Technology
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• v.28 no.3
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• pp.522-527
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• 2010

Onion has been reported to contain various organosulfur compounds which have antibiotic and anticarcinogenic properties and flavonoid like quercetin which is a valuable natural source of antioxidants. Carbohydrates in onion constitute about 80% of dry matter, and the major non-structural carbohydrate of onion bulb is fructo-oligosaccharides, well known as fructan, followed by glucose, fructose, and sucrose. The sugar concentration is associated with dormancy and storage life of onion, occurring as decrease in glucose, fructose and fructan, particularly towards the end of storage. Forced air pre-drying for 15-20 days at room temperature is an essential procedure to reduce freezing injury and sprouting, then onion bulbs can be stored at $0^{\circ}C$ for 6 months to control sprouting and decay. Bacterial soft rot caused by $Erwinia$ and $Pseudomonas$ is the main postharvest disease when the bulbs are infected with the bacteria and stored at room temperature. Browning in sliced onion is due to oxidation of phenolic compounds by polyphenol oxidase and it can be inhibited by citric acid treatment, packing with nitrogen gas, and polyethylene film.

• Journal of the Korean Magnetics Society
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• v.8 no.6
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• pp.380-387
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• 1998

In this paper, a sensor material with Fe/Zr multilayer thin film, in which the change in the magnetization and strain with hydrogenation is maximized, were developed. Compositionally modulated (CM) Fe/Zr multilayers with a $Fe_{80}Zr_{20}$ composition and modulation wavelengths ($\lambda$) $3~50{\AA}$ were deposited by sequentially sputtering (RF diode) elemental Fe and Zr targets. The films were electrolytically hydrogenated to select the optimum Fe/Zr multilayers that show the maximum increases in the magnetization and strain with hydrogenation. The changes in the magnetic properties of the thin films after hydrogenation, were measured using a hysteresis graph and a vibrating sample magnetometer (VSM), and the strains induced in the films by hydrogenation were also measured using a laser heterodyne interferometer (LHI). The optimum sensor material selected was incorporated in a fiber-optic hydrogen sensor (that can sense indirectly amount of hydrogen injected) by depositing it directly on the sensing arm of a single-mode fiber Michelson interferometer. The developed sensor holds significant promise for non-destructive test evaluation (NDE) applications because it is expected to be useful for detecting easily and accurately the subsurface corrosion in structural systems.