• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.25 no.3
• /
• pp.259-268
• /
• 2014

In this paper, we suggest a method of extracting circuit parameters of the insulating transformer using S-parameter measurement, especially in high frequency range. At 60 Hz, conventionally, no load test and short circuit test are used to extract the circuit parameters. In this paper S-parameters measured from VNA(Vector Network Analyzer) were used to extract the transformer parameters using data fitting method (optimization). The S-parameters from the equivalent circuit using the extracted parameters showed good agreement with those from measurement. Furthermore, the transformer secondary voltages from the equivalent circuit model also coincide quite exactly to the measured secondary voltages in sinusoidal forms. Finally we assert that the proposed method to extract the parameters for the insulating transformer using S-parameter is valid especially in high frequency.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.45 no.11
• /
• pp.95-101
• /
• 2008

We have used diversely the multilayer ceramic oscillator of the SMD(Surface Mounted Device) package technology that connects the crystal with the chip package. Such an oscillator occurs a stray inductance and a parasitic capacitance by the length and inner pattern. And it has been happened an amplitude attenuation and signal loss due to the reflection of power source and noise component. So we don't evaluate the precise performance of the oscillator for these factors. In this paper we have developed the Jig system to evaluate the performance of the oscillator. Through this system, we will expect an advanced performance of the oscillator and redesign an oscillator of the low jitter characteristics and low phase noise.

• Proceedings of the KIEE Conference
• /
• 2000.07e
• /
• pp.71-73
• /
• 2000

최근 고 에너지 저장 및 발생장치의 개발은 군사용에서 산업용으로 응용되면서 각종 첨단 설비가 개발되고 있다. 본 논문에서는 전자빔 발생기로 쓰이는 Gyroklystron용 대전력, 고전압, 전류 펄스 전원장치로 입력부, 특고압 발생부, 고압 정류부 및 IGBT 펄스 스위치 구성하고 그 설계 및 개발 자료에 대하여 기술하였다. 대전력 고전압 전류펄스 전원장치를 위한 각 구성 부분의 제어 및 설계 특징은 다음과 같다. 입력부인 IGBT Inverter는 펄스 전원장치의 제어를 위하여 출력 고전압을 Feedbark System에 의해 펄스 설정 전압을 유지하도록 제어하며, 또한 펄스 출력중에 직류 고전압부의 전압강하, 즉 펄스 진압의 Drop이 커지는 것을 방지하기 위하여 Fast Dynamics를 갖도록 Feedback System을 구성하였다. 단상 특고압 승압용 변압기 3대를 직렬접속한 특고압 발생부는 PWM 제어된 전압을 입력받아 특고압으로 승압시키며 고압 펄스성 전압과 매우 높은 dV/dt 전압이 인가되므로 Stray Capacitance가 최소가 되어야 하며 절연파괴로부터 보호될 수 있어야 한다. 고압 정류부는 Inverter와 특고압 변압기에 의하여 전원이 공급되므로 교류전압의 교번 순간에 매우 높은 전압변동률을 가지는 Fast Recovery High Voltage Rectifier로 설계 제작되어졌다. 펄스 스위치인 IGBT 스위치는 Gate Driver에 의해 구동되어 지며 주어진 펄스 사양을 만족시키게 된다. 특히 소자의 전압특성을 고려하여 120KV의 전압 값을 갖도록 설계, 제작하였다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.29 no.9
• /
• pp.677-684
• /
• 2018

In this paper, we propose a method for high-frequency modeling of transformers using the S-parameter. The open and short circuits of the primary and secondary sides were configured, and the reflection coefficient in each circuit was measured using a vector network analyzer. The equivalent circuit elements were extracted from the measured results to model the high-frequency equivalent circuit, and the validity of the method was verified by comparing the measured S-parameters in a 2-port network with the simulation results.

• Journal of the Institute of Electronics Engineers of Korea SC
• /
• v.43 no.4 s.310
• /
• pp.45-52
• /
• 2006

In his paper, we have developed the SMD(surface mounted device) type PECL(positive emitter-coupled logic) VCXO of the $5{\times}7mm$ size for gratifying the requested specifications and the multilayer ceramic SMD(surface mounted device) package technology. The VCXO wired with the PECL(positive emitter coupled logic) package take place a stray inductance and a parasitic capacitance by the length and the inner pattern of the VCXO and the amplitude attenuation and signal loss due to the reflection of power source and the noise component. We have developed the Zig system to analyze the precise spectrum and evaluate the performance. The basic operating voltage is the 3.3 V and have the frequency range of 120MHz-180MHz. The Q factor is over 5K and it has the low jitter characteristics of 3.5 ps and low phase noise.

• Proceedings of the KIEE Conference
• /
• 1997.07e
• /
• pp.1715-1717
• /
• 1997

This paper deals with the dead operation characteristics of the earth leakage circuit breaker(ELB) caused by impulse voltages. The surge protective devices for electronic circuit and AC power lines are becoming more widely used. It is possible to give rise to the malfunction of ELB due to the operation of surge protective devices, and the interruption of AC power lines brings about several disadvantages such as low reliability of electronic and informational systems, economical loss, and etc. The dead operation characteristics of the ELB from impulse voltages were measured under the conditions of KS C 4613 and the test circuit with a varistor. As a result, the peak current value of the zero-phase sequence circuit of the ELB is increased as the surge voltage and stray capacitance increase. All of the ELBs used in this work were satisfied with the lightning impulse dead operation test condition defined in KS C 4613. However one specimen only did not cause dead operation in the condition of the test circuit with a varistor. There is high possibility that a large portion of the ELBs connected with the AC power lines having the surge protective devices bring about the dead operation.

• Journal of the Semiconductor & Display Technology
• /
• v.19 no.1
• /
• pp.42-48
• /
• 2020

As global warming accelerates, eco-friendly electric cars are being developed to reduce carbon dioxide emissions, and power conversion inverters are used to drive motors. Among inverter components, DC-link capacitor is heated by high current usage, which causes problems such as performance and life-saving of inverter. Although metal cases with good thermal performance have been used to solve this problem, it is difficult to apply them in practice due to insulation problems with other parts. In this paper, the Heat-Generation influence factor of DC-link capacitor is analyzed. Variables on heat-generation are set at 3 levels for film width, inductance, and film thickness. Box-Behnken to 13 tests using the design and minimal deviations, e.g. through the experiment three times by each level. The surface of the film k type by attaching the sensor current is measured temperature. Capacitance was set to a minimum level of 200 ㎌ and had a frequency of 16 kHz with Worst case, ambient temperature of 85℃ and a ripple current of 50 Ams was applied. The temperature at the measurement point was collected in the data logger after sampling at 1 minute intervals for 2 hours after saturation with the ambient temperature. This experiment confirmed that setup factors are correlated with heat-generation.

• Proceedings of the KIEE Conference
• /
• 2000.07b
• /
• pp.1309-1311
• /
• 2000

본 논문에서는 입력부, 특고압 발생부 및 고압 정류부, IGBT Pulse Switch로 구성된 Gyro-klystron용 대전력, 고전압, 전류 펄스 전원장치의 설계 및 개발에 대하여 기술하였다. 대전력, 고전압, 전류 펄스 전원장치를 위한 각 구성부분의 제어 및 설계 특징은 다음과 같다. 입력부인 IGBT Inverter는 펄스 전원장치의 전압 제어를 위하여 출력 고전압을 Feedback System 제어에 의해 Pulse 설정 전압을 갖도록 제어하며, 또한 Pulse 출력중에 직류 고전압부의 전압강하, 즉 Pulse 전압의 Drop이 커지는 것을 방지하기 위하여 Fast Dynamics를 갖도록 Feedback System을 구성하였다. 3대의 단상 특고압 승압변압기가 직렬로 구성된 특고압 발생부는 PWM된 전압을 입력받아 특고압으로 승압시킨다. 특고압 변압기는 고압 Pulse성 전압과 매우 높은 dV/dt 전압이 인가되므로 Stray Capacitance가 최소가 되어야 하며 절연파괴로부터 보호될 수 있어야 한다. 고압 정류부는 Inverter와 특고압변압기에 의하여 전원이 공급되므로 교류전압의 교번순간에 매우 높은 전압 변동률을 가지는 Fast Recovery High Voltage Rectifier로 설계, 제작되어졌다. Pulse Switch인 IGBT Switch는 Gate Driver에 의해 구동되어 진다. 주어진 Pulse 사양을 만족시키며 특히 소자의 전압 특성을 고려하여 120KV의 전압값을 갖도록 설계, 제작하였다. 본 논문에서는 고전압 펄스 전원장치 각 부분의 설계에 대하여 기본적인 사항들을 제시하며, 실험결과를 통하여 제안된 방식의 우수한 특성을 입증한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.852-856
• /
• 2000

In this paper, we investigated the output power, step-up ratio and efficiency properties of piezoelectric transformer with dielectric and piezoelectric characteristics of manufactured ceramics. The piezoelectric transformers with $2.0$\times$10$\times$48[$mm^3$] size were fabricated and its electrical properties were measured. When output power of 6W was constantly maintained, T2 piezoelectric transformer showed the minimum temperature rise of $9(^{\circ}C)$ at $150(K\Omega)$ load resistance. However, T1 piezoelecric transformer showed the temperature rise of $7.2(^{\circ}C)$ at $200(K\Omega)$ load resistance. The 6[w] CCFL (Cold Cathode Fluorescent Lamp) was successfully driven by T1 and T2 piezoelectric transformer but, its temperature rise $\Delta$T[$^{\circ}C)$] was generated more than $20(^{\circ}C)$. It is concluded that we have to design the piezoelectric transformers so that its output impedance correspond to the load impeadance, including any stray capacitance.

• Proceedings of the KIEE Conference
• /
• 1996.11a
• /
• pp.346-349
• /
• 1996

In application of high power IGBT PWM inverters, the treatable power range is considerably limited due to the overvoltage caused by the stray inductance components within the power circuit. This paper proposes a new gate drive circuit for IGBTs which can actively suppress the overvoltage across the driven IGBT at turn-off and the overvoltage across the opposite IGBT at turn-on while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage is limited much effectively at the larger collector current. The turn-on scheme is to decrease the rising rate of the collector current by increasing input capacitance during turn-on transient when the gate-emitter voltage is greater than threshold voltage. The experimental results under various normal and fault conditions prove the effectiveness of the proposed circuit.