• Title/Summary/Keyword: Step pulse

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Design Optimization for Air Ducts and Fluid Pipes at Electromagnetic Pulse(EMP) Shield in Highly Secured Facilities (EMP 방호시설의 덕트 및 배관 최적 설계 방안)

  • Pang, Seung-Ki;Kim, Jae-Hoon
    • Journal of the Korean Society for Geothermal and Hydrothermal Energy
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    • v.10 no.4
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    • pp.15-24
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    • 2014
  • This study conducted a computational fluid dynamics(CFD) analysis to find an appropriate diameter or sectional area of air ducts and fluid pipes which have an electromagnetic pulse(EMP) shied to protect indoor electronic devices in special buildings like military fortifications. The result shows that the optimized outdoor air intake size can be defined with either the ratio of the maximum air velocity in the supply duct to the air intake size, or the shape ratio of indoor supply diffuser to the outdoor air intake. In the case of water channel, the fluid velocity at EMP shield with the identical size of the pipe, decreases by 25% in average due to the resistance of the shield. The enlargement of diameter at the shield, 2 step, improves the fluid flow. It illustrated that the diameter of downstream pipe size is 1step larger than the upstream for providing the design flow rate. The shield increases friction and resistance, in the case of oil pipe, so the average flow velocity at the middle of the shield increase by 50% in average. In consideration of the fluid viscosity, the oil pipe should be enlarged 4 or 5 step from the typical design configuration. Therefore, the fluid channel size for air, water, and oil, should be reconsidered by the engineering approach when EMP shield is placed in the middle of channel.

Effective Cu Filling Method to TSV for 3-dimensional Si Chip Stacking (3차원 Si칩 실장을 위한 효과적인 Cu 충전 방법)

  • Hong, Sung Chul;Jung, Do Hyun;Jung, Jae Pil;Kim, Wonjoong
    • Korean Journal of Metals and Materials
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    • v.50 no.2
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    • pp.152-158
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    • 2012
  • The effect of current waveform on Cu filling into TSV (through-silicon via) and the bottom-up ratio of Cu were investigated for three dimensional (3D) Si chip stacking. The TSV was prepared on an Si wafer by DRIE (deep reactive ion etching); and its diameter and depth were 30 and $60{\mu}m$, respectively. $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. The current waveform was varied like a pulse, PPR (periodic pulse reverse) and 3-step PPR. As experimental results, the bottom-up ratio by the pulsed current decreased with increasing current density, and showed a value of 0.38 on average. The bottom-up ratio by the PPR current showed a value of 1.4 at a current density of $-5.85mA/cm^2$, and a value of 0.91 on average. The bottom-up ratio by the 3-step PPR current increased from 1.73 to 5.88 with time. The Cu filling by the 3-step PPR demonstrated a typical bottom-up filling, and gave a sound filling in a short time.

Design of a step-up DC-DC Converter using a 0.18 um CMOS Process (0.18 um CMOS 공정을 이용한 승압형 DC-DC 컨버터 설계)

  • Lee, Ja-kyeong;Song, Han-Jung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.17 no.6
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    • pp.715-720
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    • 2016
  • This paper proposes a PWM (Pulse Width Modulation) voltage mode DC-DC step-up converter for portable devices. The converter, which is operated with a 1 MHz switching frequency, is capable of reducing the mounting area of passive devices, such as inductor and capacitor, and is suitable for compact mobile products. This step-up converter consists of a power stage and a control block. The circuit elements of the power stage are an inductor, output capacitor, MOS transistors Meanwhile, control block consist of OPAMP (operational amplifier), BGR (band gap reference), soft-start, hysteresis comparator, and non-overlap driver and some protection circuits (OVP, TSD, UVLO). The hysteresis comparator and non-overlapping drivers reduce the output ripple and the effects of noise to improve safety. The proposed step-up converter was designed and verified in Magnachip/Hynix 0.18um 1-poly, 6-metal CMOS process technology. The output voltage was 5 V with a 3.3 V input voltage, output current of 100 mA, output ripple less than 1% of the output voltage, and a switching frequency of 1 MHz. These designed DC-DC step-up converters could be applied to the Personal Digital Assistants(PDA), cellular Phones, Laptop Computer, etc.

An Evaluation of Voltage Source PAWM Inverter by Torque Ripple Content (토오크 맥동량에 의한 전압원 PAWM 인버터의 평가)

  • Lee, Chi-Hwan;Koo, Bon-Ho;Kwon, Wo-Hyen
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.5
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    • pp.60-70
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    • 1989
  • In this paper, a new HTF(Harmonic torque function) which takes into account the phasor of harmonic current, and which represents torque ripple content of induction motor is proposed. Through experiments and computer simulations using direct-quadrature two axis model, the proposed HTF is proved to be valid. Applying this function, six-step, SPWM and TPWM pulse-amplitude-width-controlled inverters are evaluated and compared with each other. A good control strategy for PAWM inverters was chosen from the results. It turns out that TPWM is superior to SPWM in torqur ripple content and output voltage amplitude of fundamental wave and six-step is better than PWM when CR is 9.

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Transformerless Three-Level DC-DC Buck Converter with a High Step-Down Conversion Ratio

  • Zhang, Yun;Sun, Xing-Tao;Wang, Yi-Feng;Shao, Hong-Jun
    • Journal of Power Electronics
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    • v.13 no.1
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    • pp.70-76
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    • 2013
  • For high power high step-down dc-dc conversion applications, conventional three-level dc-dc converters are subject to extreme duty cycles or increased volume and cost due to the use of transformers. In this paper, a transformerless three-level dc-dc buck converter with a high step-down conversion ratio is proposed. The converter comprises two asymmetrical half bridges, which are of the neutral point clamped structures. Therefore, the output pulse voltage of the converter can be obtained in terms of the voltage difference between the two half bridges. In order to realize harmonious switching of the converter, a modulation strategy with capacitor voltages self balance is presented. According to the deduced output dc voltage function, transformerless operation without extreme duty cycles can be implemented. Experimental results from a 1kW prototype verify the validity of the proposed converter. It is suitable for ship electric power distribution systems.

Etch Characteristics of $SiO_2$ by using Pulse-Time Modulation in the Dual-Frequency Capacitive Coupled Plasma

  • Jeon, Min-Hwan;Gang, Se-Gu;Park, Jong-Yun;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.472-472
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    • 2011
  • The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.

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Effects of Modulation Type on Electrically-Elicited Tactile Sensation (전기자극 변조방식이 체성감각에 미치는 영향)

  • Hwang, Sun-Hee;Ara, Jawshan;Song, Tong-Jin;Bae, Tae-Sue;Park, Sang-Hyuk;Khang, Gon
    • Journal of the Korean Society for Precision Engineering
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    • v.29 no.7
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    • pp.711-716
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    • 2012
  • The purpose of this study was to investigate how the modulation method affects the effectiveness of eliciting tactile sensations by electrical stimulation. Two methods were employed and the results were compared and analyzed; pulse amplitude modulation (PAM) and pulse width modulation (PWM). Thirty-five healthy subjects participated in the experiments to measure the stimulation intensity that began to elicit a tactile sensation - activation threshold (AT). Constant-current monophasic rectangular pulse trains were employed, and the stimulation intensity was varied from zero until the subject felt any uncomfortable sensation. The step size of the stimulation intensity was 100nC/pulse. After each experiment, the subject described the sensation both quantitatively and qualitatively. The two modulation methods did not make a significant difference as far as the AT values were concerned, but most of the subjects showed 'intra-individual' consistency. Also, it was confirmed that our range of the stimulation parameters enabled us to obtain three major tactile sensations; tickling, pressure and vibration. The results suggested that the stimulation parameters and the modulation type should be selected for each individual and that selective electrical stimulation of the mechanoreceptors needs more diversified researches on the electrode design, multi-channel stimulation protocol, waveforms of the pulse train, etc.

Unsteady Ignition in the Pulse Combustor with Counter Jet Flows (대향분출류가 있는 맥동연소기의 비정상 점화현상)

  • 이창진
    • Journal of the Korean Society of Propulsion Engineers
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    • v.1 no.1
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    • pp.64-72
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    • 1997
  • An analytical study has been performed to investigate the unsteady ignition characteristics of pulse combustion. In many combustion applications, strain rate of the flow can significantly affect the combustion features; ignition, extinction, and reignition. In the pulse combustion, two jets (hot combustion gases and fresh mixtures) coming from the opposite side of the combustor will collide in the combustor forming a stagnation region where the chemical reaction is suppressed by the strain rate until this becomes below the critical value. In this research, the method of large activation energy asymptotic is adopted with one step irreversible kinetics to examine the ignition response to the periodic variation of the strain rate of flow. The results show the variation of the maximum value of strain rate can determine whether the ignition or extinction occur.

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OPTIMIZATION OF OPERATION PARAMETERS OF 80-KEV ELECTRON GUN

  • Kim, Jeong Dong;Lee, Yongdeok;Kang, Heung Sik
    • Nuclear Engineering and Technology
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    • v.46 no.3
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    • pp.387-394
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    • 2014
  • A Slowing Down Time Spectrometer (SDTS) system is a highly efficient technique for isotopic nuclear material content analysis. SDTS technology has been used to analyze spent nuclear fuel and the pyro-processing of spent fuel. SDTS requires an external neutron source to induce the isotopic fissile fission. A high intensity neutron source is required to ensure a high for a good fissile fission. The electron linear accelerator system was selected to generate proper source neutrons efficiently. As a first step, the electron generator of an 80-keV electron gun was manufactured. In order to produce the high beam power from electron linear accelerator, a proper beam current is required form the electron generator. In this study, the beam current was measured by evaluating the performance of the electron generator. The beam current was determined by five parameters: high voltage at the electron gun, cathode voltage, pulse width, pulse amplitude, and bias voltage at the grid. From the experimental results under optimal conditions, the high voltage was determined to be 80 kV, the pulse width was 500 ns, and the cathode voltage was from 4.2 V to 4.6 V. The beam current was measured as 1.9 A at maximum. These results satisfy the beam current required for the operation of an electron linear accelerator.

Design and Implementation of Parabolic Speed Pattern Generation Pulse Motor Control Chip (포물선 가감속 패턴을 가지는 정밀 펄스 모터 콘트롤러 칩의 설계 및 제작)

  • Won, Jong-Baek;Choi, Sung-Hyuk;Kim, Jong-Eun;Park, Jone-Sik
    • Proceedings of the KIEE Conference
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    • 2001.11c
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    • pp.284-287
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    • 2001
  • In this paper, we designed and implemented a precise pulse motor control chip that generates the parabolic speed pattern. This chip can control step motor[1], DC servo[2] and AC servo motors at high speed and precisely. It can reduce the mechanical vibration to the minimum at the change point of a degree of acceleration. Because the parabolic speed pattern has the continuous acceleration change. In this paper, we present the pulse generation algorithm and the parabolic pattern speed generation. We verify these algorithm using visual C++. We designed this chip with VHDL(Very High Speed Integrated Circuit Hardware Description Language) and executed a logic simulation and synthesis using Synopsys synthesis tool. We executed the pre-layout simulation and post-layout simulation with Verilog-XL simulation tool. This chip was produced with 100 pins, PQFP package by 0.35 um CMOS process and implemented by completely digital logic. We developed the hardware test board and test program using visual C++. We verify the performance of this chip by driving the servo motor and the function by GUI(Graphic User Interface) environment.

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