• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.6
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• pp.259-263
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• 2001

The continuum model of transient point defect dynamics to predict the concentrations of interstitial and vacancy is established by estimating expressions for the thermophysical properties of intrinsic point defects. And the point defect distribution in a Czochralski-grown 200 mm silicon crystal and the location of oxidation-induced stacking fault ring(OiSF-ring) created during the cooling of crystals are calculated by using the numerical analysis. The purpose of this paper is to show that his approach lead to predictions that are consistent with experimental results. Predicted point defect distributions by transient point defect dynamic analysis are in good qualitative agreement with experimental data under widely and abruptly varying crystal pull rates when correlated with the position of the OiSF-ring .

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.969-974
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• 1998

The effect of vanadium, which is known to decrease the stacking fault energy of Fe-base alloys, on the microstructure and elevated temperature sliding wear resistance of Fe-20Cr- 1.7C- 1Si alloy was investigated. The maximum amount of vanadium maintaining the austenitic matrix seems to be about 3wt.% in Fe-20Cr- 1.7C-1Si-xV (x = 0, 1, 3, 6. lOwt.%) alloys and the austenitic alloys showed better wear resistance than ferritic alloys. It was considered to be due to the low stacking fault energy and $\gamma->\alpha$ strain-induced phase transformation at rmm temperature. It was shown from elevated temperature sliding tests up to .$225^{\circ}C$ that the addition of vanadium increases the temperature, at which the transition from oxidative wear to adhesive wear occur, and the amount of d formed at $225^{\circ}C$. Thus, it was considered that the addition of vanadium improves the elevated temperature sliding wear resistance of Fe-20Cr- 1.7C - 1Si by reducing the increasing rate of stacking fault energy with temperature and by increasing Ma temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.23-23
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• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.2
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• pp.45-50
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• 2005

During oxidation process, several type of defects are formed on the surface of the silicon crystal which was damaged mechanically before oxidation. As the size of abrasive particle increases multiple dislocation loops are produced favorably over oxidation-induced stacking faults, which are dominantly produced when ground with finer abrasive particle. These defects are not related with the crystal growth process like Czochralski or directional solidification. During directional solidification process, twins and stacking faults are the two major defects observed in the bulk of the silicon crystal. On the other hand, slip dislocations produced by the thermal stress are not observed. Thus, not only in single crystalline silicon crystal but also in multi-crystalline silicon, extrinsic gettering process with programmed production of surface defects might be highly applicable to silicon wafers for purification.

• 한국초전도학회:학술대회논문집
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• v.13
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• pp.38-38
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• 2003

• Journal of the Korean Society for Nondestructive Testing
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• v.30 no.5
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• pp.444-450
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• 2010

In the present study, the microscopic degradation of copper and copper alloy subjected to cyclic deformation has been evaluated by the electrical resistivity measurement using the DC four terminal potential method. The copper (Cu) and copper alloy (Cu-35Zn), whose stacking fault energy is much different each other, were cyclically deformed to investigate the response of the electrical resistivity to different dislocation substructures. Dislocation cell substructure was developed in the Cu, while the planar array of dislocation structure was developed in the Cu-35Zn alloy increasing dislocation density with fatigue cycles. The electrical resistivity increased rapidly in the initial stage of fatigue deformation in both materials. Moreover, after the fatigue test it increased by about 7 % for the Cu and 6.5 % for the Cu-35Zn alloy, respectively. From these consistent results, it may be concluded that the dislocation cell structure responds to the electrical resistivity more sensitively than the planar array dislocation structure evolved during cyclic fatigue.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.35-42
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• 1998

- The Si-$SiO_2$ interface of silicon on insulator (SOI) formed by 100 keV $O^+$ was ohserved using high resolution transmission electron microscopy (HRTEM), before and after annealing. The interface of as-implanted sample, ~$5\times 10^{17}\textrm{cm}^{-2}O^+$ implanted at $550^{\circ}C$ was very rough and it has many defectsoxide precipitate, stacking fault, coesite $SiO_2$ etc. However, the interface became flat by high temperature annealing at $1300^{\circ}C$ for 4 hour. It's roughness, observed by HRTEM, was comparable to the interface roughness of 3 keV $O_2^\;+$ ion beam oxide and -6 nm gate oxide formed by thermal oxidation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.486-487
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• 2007

$Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2) thin films have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure in vacuum chamber was varied between $2{\times}10^{-6}{\sim}4{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation.

• Korean Journal of Materials Research
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• v.12 no.7
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• pp.550-554
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• 2002

The effect of Mn on cavitation erosion resistance and the sliding wear resistance of Fe-base hardfacing NewAlloy was investigated. Mn is known to decrease stacking fault energy and enhance the formation of $\varepsilon$-martensite. Cavitation erosion resistance for 50 hours and sliding wear resistance for 100 cycles were evaluated by weight loss. Fe-base hardfacing NewAlloy showed more excellent cavitation erosion resistance than Mn-added NewAlloys. $\Upsilon-\alpha$' phase transformation that can enhance erosion resistance by matrix hardening occurred in every specimens. But, only in Mn free Fe-base hardfacing NewAlloy, the hardened matrix could repress the propagation of cracks that was initialed at the matrix-carbides interfaces more effectively than Mn-added NewAlloy The Mn free Fe-base hardfacing NewAlloy showed better sliding wear resistance than Mn-added alloys. Mn-addition up to 5wt.% couldn't increase the sliding wear and cavitation erosion resistance of Fe-base hardfacing alloy because it didn't make $\Upsilon\to\varepsilon$ martensite phase transformation. Therefore, it is considered that the cavitation erosion and the sliding wear resistance can be improved due to $\Upsilon\to\varepsilon$ martensite phase transformation when Mn is added more than 5wt.% in Fe-base hardfacing alloys.

• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1377-1382
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• 1995

A high-resolution transmission electron microscopy study on the lattice defects formed in the high energy P ion implanted silicon was carried out on an atomic level. Results show that Lomer dislocations, 60$^{\circ}$perfect dislocations, 60$^{\circ}$ dislocation dipole and extrinsic stacking fault formed in the near Rp of as-implanted specimen. In the annelaed specimens, interstitial Frank loops, 60$^{\circ}$perfect disolations, 60$^{\circ}$dislocation dipoles, stacking faults, precipitates, perfect dislocation loops and <112> rodlike defects existed exclusively near in the Rp with various annealing temperature and time. From these results, it is concluded that extended secondary defects as well as the point defect clusters could be formed without annealing. Even at low temperature annealing such as 55$0^{\circ}C$, small interstitial Frank loops could be formed and precipitates were also formed by $700^{\circ}C$ annealing. The defect band annealed at 100$0^{\circ}C$ for 1 hr could be divided into two regions depending on the distribution of the secondary defects.