• Transactions of the Korean Society of Mechanical Engineers A
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• v.21 no.2
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• pp.346-351
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• 1997

The creep characteristics of an Al-5wt.% Ag alloy including the stress exponent, the activation energy for creep and the shape of the creep curve were investigated at a normalized shear stress extending from $ 10^{-5}{\;}to{\;}3{\times}10^{-4}$ and in the temperature range of 640-873 K, where silver is in solid solution. The experimental results shows that the stress exponent is 4.6, the activation energy is 141 kJ/mole, and the stacking fault energy is $180{\;}mJ/m^2$, suggesting that the creep behavior of Al-5 wt.% Ag is similiar to that reported for pure aluminum, and that under the current experimental conditions, the alloy behaves as a class II(metal class). The above creep characteristics obtained for Al-5 wt.% Ag are discussed in the light of prediction regarding deformation mechanisms in solid solution alloys.

• Nuclear Engineering and Technology
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• v.38 no.7
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• pp.619-638
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• 2006

Low temperature irradiation can significantly harden metallic materials and often lead to strain localization and ductility loss in deformation. This paper provides a review on the radiation effects on the deformation of metallic materials, focusing on microscopic and macroscopic strain localization phenomena. The types of microscopic strain localization often observed in irradiated materials are dislocation channeling and deformation twinning, in which dislocation glides are evenly distributed and well confined in the narrow bands, usually a fraction of a micron wide. Dislocation channeling is a common strain localization mechanism observed virtually in all irradiated metallic materials with ductility, while deformation twinning is an alternative localization mechanism occurring only in low stacking fault energy(SFE) materials. In some high stacking fault energy materials where cross slip is easy, curved and widening channels can be formed depending on dose and stress state. Irradiation also prompts macroscopic strain localization (or plastic instability). It is shown that the plastic instability stress and true fracture stress are nearly independent of irradiation dose if there is no radiation-induced phase change or embrittlement. A newly proposed plastic Instability criterion is that the metals after irradiation show necking at yield when the yield stress exceeds the dose-independent plastic instability stress. There is no evident relationship between the microscopic and macroscopic strain localizations; which is explained by the long-range back-stress hardening. It is proposed that the microscopic strain localization is a generalized phenomenon occurring at high stress.

• Journal of the Korean Society for Heat Treatment
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• v.32 no.2
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• pp.61-67
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• 2019

This study was carried out to investigate the effect of thermo-mechanical treatment on the tensile properties of Fe-20Mn-12Cr-3Ni-3Si alloy with deformation induced martensite transformation. ${\alpha}^{\prime}$ and ${\varepsilon}$-martensite, dislocation, stacking fault were formed, and grain size was refined by thermo-mechanical treatment. With the increasing cycle number of thermo-mechanical treatment, volume fraction of ${\varepsilon}$ and ${\alpha}^{\prime}$-martensite, dislocation, stacking fault were increased, and grain size decreased. In 5-cycle number thermo-mechanical treated specimens, more than 10% of the volume fraction of ${\varepsilon}$-martensite and less than 3% of the volume fraction of ${\alpha}^{\prime}$-martensite were attained. Tensile strength was increased and elongation was decreased with the increasing cycle number of thermo-mechanical treatment. Tensile properties of thermo-mechanical treated alloy with deformation induced martensite transformation was affected to formation of martensite by thermo-mechanical treatment, but was large affected to increasing of dislocation and grain refining.

• Korean Journal of Materials Research
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• v.26 no.11
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• pp.656-661
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• 2016

4H- and 6H-SiC grown by physical vapor transport method were investigated by transmission electron microscopy (TEM). From the TEM diffraction patterns observed along the [11-20] zone axis, 4H- and 6H-SiC were identified due to their additional diffraction spots, indicating atomic stacking sequences. However, identification was not possible in the [10-10] zone axis due to the absence of additional diffraction spots. Basal plane dislocations (BPDs) were investigated in the TEM specimen prepared along the [10-10] zone axis using the two-beam technique. BPDs were two Shockley partial dislocations with a stacking fault (SF) between them. Shockley partial BPDs arrayed along the [0001] growth direction were observed in the investigated 4H-SiC. This arrayed configuration of Shockley partial BPDs cannot be recognized from the plan view TEM with the [0001] zone axis. The evaluated distances between the two Shockley partial dislocations for the investigated samples were similar to the equilibrium distance, with values of several hundreds of nanometers or even values as large as over a few micrometers.

• The Journal of Natural Sciences
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• v.7
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• pp.83-90
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• 1995

The microstructural and textural development during rolling is compared in two Hadifield's steels (high Mn steel), one having low carbon content (0.65 wt.%) and the other high carbon (1.35 wt.%).In low carbon Hadfield's steel (LCHS) mixed microstructures are formed which contain intrinsic stacking faults, deformation twins, and brass type shear bands. The deformation twins are thought to be formed by the stacking of intrinsic stacking faults. The similar development to 70-30 brass texture is observed in early deformation. However the abnormal texture is developed after 40 % deformation, which is thought to be due to the martensite phase transformation. In high carbon Hadfield's steel (HCHS) mixed substructures of dislocation tangles, deformation twins, and shear bands (both copper and brass type) are found to develop. The texture development is similar to that of 70-30 brass. This is consistant with no carbon segregation and no martensitic phase transformation in HCHS. In spite of the difference of substructure and texture development during rolling in two steels, the difference in stacking fault energy is measured to be small ($2 mJm^-2$). The carbon segregation is only occurred in LCHS. Thus it is thought that the carbon segregation influence the microstructure and texture development during rolling. This is related with martensite phase transformation in LCHS.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.7
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• pp.85-94
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• 1994

A high-resolution transmission electron microscopy study of the solid phase crystallization of the amorphous silicon thin films, deposited on SiOS12T at 52$0^{\circ}C$ by low pressure chemical vapor deposition and annealed at 55$0^{\circ}C$ in a dry N$_{2}$ ambient was carried out so that the arrangement of atoms in the crystalline silicon and at the amorphous/crystalline interface of the growing grains could be understood on an atomic level. Results show that circular crystalline silicon nuclei have formed and then the grains grow to an elliptical or dendritic shape. In the interior of all the grains many twins whose{111} coherent boundaries are parallel to the long axes of the grains are observed. From this result, it is concluded that the twins enhance the preferential grain growth in the <112> direction along {111} twin planes. In addition to the twins. many defect such as intrinsic stacking faults, extrinsic stacking faults, and Shockley partial dislocations, which can be formed by the errors in the stacking sequence or by the dissociation of the perfect dislocation are found in the silicon grain. But neither frank partial dislocations which can be formed by the condensation of excess silicon atoms or vacancies and can form stacking fault nor perfect dislocations which can be formed by the plastic deformation are observed. So it is concluded that most defects in the silicon grain are formed by the errors in the stacking sequence during the crystallization process of the amorphous silicon thin films.

• Applied Microscopy
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• v.25 no.3
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• pp.82-89
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• 1995

High resolution transmission electron microscopic observations on quaternary $Zn_{1-x}Mg_{x}S_y$ $S_{1-y}$(x=0.13, y=0.16) on (001) GaAs substrate grown up to $1.2{\mu}m$ with 20nm ZnSe buffer layer at $300^{\circ}C$ by RIBER MBE system which has a single growth chamber were investigated by HRTEM working at 300kV with point resolution of 0.18nm. The ZnSe buffer layer maintains the coherency with the GaAs substrate. The stacking faults had begun at ZnSe buffer/$Zn_{1-x}Mg_{x}S_{y}S_{1-y}$ interface, whose length and spacing became larger than 60nm and wider than 40nm, respectively. The inverse triangular stacking fault was bounded by stacking faults which were formed on {111} planes with different variants. There exists rare stacking faults inside the triangular defect. The epilayer surrounded by the straight stacking faults, which had formed in the same direction, became the columnar structure.

• Journal of the Korean Ceramic Society
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• v.55 no.3
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• pp.285-289
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• 2018

We synthesized silicon carbide (${\beta}-SiC$) nanowires with nano-scale diameter (30 - 400 nm) and micro-scale length ($50-200{\mu}m$) on a porous body using low-grade silica and carbon black powder by carbothermal reduction at $1300-1600^{\circ}C$. The SiC nanowires were formed by vapor-liquid-solid deposition with self-evaporated Fe catalysts in low-grade silica. We investigated the characteristics of the SiC nanowires, which were grown on a porous body with Ar flowing in a vacuum furnace. Their structural, optical, and electrical properties were analyzed with X-ray diffraction (XRD), transmission electron microscopy (TEM), and selective area electron diffraction (SAED). We obtained high-quality SiC single crystalline nanowire without stacking faults that may have uses in industrial applications.

• Applied Microscopy
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• v.27 no.3
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• pp.257-263
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• 1997

Microstructural characterizations of II-VI blue laser diodes which consist of quaternary $Zn_{1-x}Mg_xS_ySe_{l-y}$ cladding layer, ternary $ZnS_ySe_{l-y}$ guiding layer and $Zn_{0.8}Cd_{0.2}Se$ quantum well as active layer were carried out using the transmission electron microscope working at 300 kV. Even though the entire structure is pseudomorphic to GaAs substrate, the structure had contained numerous extended stacking faults and dislocations which had created at ZnSe/GaAs interfaces and then further grown to the top of the epilayers. These faults might be expected to cause the degradation and shortening the lifetime of laser devices.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.567-568
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• 2006

We investigate the structures and the formation energy of inversion domain boundaries (IDBs) using the Tersoff empirical potential. Four kinds of IDBs ( A and B types for IDB* and Holt ) are considered. The IDBs with A type are energetically favorable compared to B type with the structural instability. The IDB* is also more stable than the Holt type in spite of fourfold and eightfold rings of bonds. We calculate the atomic configurations of the Holt IDBs induced by the interactions of the IDB* with the stacking faults $I_1$ and $I_2$. The stacking fault $I_2$ interacted with $I_1$ on the IDB induces the structural transformation from IDB* to Holt type.