• 대한기계학회논문집A
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• 제21권2호
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• pp.346-351
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• 1997

The creep characteristics of an Al-5wt.% Ag alloy including the stress exponent, the activation energy for creep and the shape of the creep curve were investigated at a normalized shear stress extending from $ 10^{-5}{\;}to{\;}3{\times}10^{-4}$ and in the temperature range of 640-873 K, where silver is in solid solution. The experimental results shows that the stress exponent is 4.6, the activation energy is 141 kJ/mole, and the stacking fault energy is $180{\;}mJ/m^2$, suggesting that the creep behavior of Al-5 wt.% Ag is similiar to that reported for pure aluminum, and that under the current experimental conditions, the alloy behaves as a class II(metal class). The above creep characteristics obtained for Al-5 wt.% Ag are discussed in the light of prediction regarding deformation mechanisms in solid solution alloys.

• Nuclear Engineering and Technology
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• 제38권7호
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• pp.619-638
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• 2006

Low temperature irradiation can significantly harden metallic materials and often lead to strain localization and ductility loss in deformation. This paper provides a review on the radiation effects on the deformation of metallic materials, focusing on microscopic and macroscopic strain localization phenomena. The types of microscopic strain localization often observed in irradiated materials are dislocation channeling and deformation twinning, in which dislocation glides are evenly distributed and well confined in the narrow bands, usually a fraction of a micron wide. Dislocation channeling is a common strain localization mechanism observed virtually in all irradiated metallic materials with ductility, while deformation twinning is an alternative localization mechanism occurring only in low stacking fault energy(SFE) materials. In some high stacking fault energy materials where cross slip is easy, curved and widening channels can be formed depending on dose and stress state. Irradiation also prompts macroscopic strain localization (or plastic instability). It is shown that the plastic instability stress and true fracture stress are nearly independent of irradiation dose if there is no radiation-induced phase change or embrittlement. A newly proposed plastic Instability criterion is that the metals after irradiation show necking at yield when the yield stress exceeds the dose-independent plastic instability stress. There is no evident relationship between the microscopic and macroscopic strain localizations; which is explained by the long-range back-stress hardening. It is proposed that the microscopic strain localization is a generalized phenomenon occurring at high stress.

• 열처리공학회지
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• 제32권2호
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• pp.61-67
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• 2019

This study was carried out to investigate the effect of thermo-mechanical treatment on the tensile properties of Fe-20Mn-12Cr-3Ni-3Si alloy with deformation induced martensite transformation. ${\alpha}^{\prime}$ and ${\varepsilon}$-martensite, dislocation, stacking fault were formed, and grain size was refined by thermo-mechanical treatment. With the increasing cycle number of thermo-mechanical treatment, volume fraction of ${\varepsilon}$ and ${\alpha}^{\prime}$-martensite, dislocation, stacking fault were increased, and grain size decreased. In 5-cycle number thermo-mechanical treated specimens, more than 10% of the volume fraction of ${\varepsilon}$-martensite and less than 3% of the volume fraction of ${\alpha}^{\prime}$-martensite were attained. Tensile strength was increased and elongation was decreased with the increasing cycle number of thermo-mechanical treatment. Tensile properties of thermo-mechanical treated alloy with deformation induced martensite transformation was affected to formation of martensite by thermo-mechanical treatment, but was large affected to increasing of dislocation and grain refining.

• 한국재료학회지
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• 제26권11호
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• pp.656-661
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• 2016

4H- and 6H-SiC grown by physical vapor transport method were investigated by transmission electron microscopy (TEM). From the TEM diffraction patterns observed along the [11-20] zone axis, 4H- and 6H-SiC were identified due to their additional diffraction spots, indicating atomic stacking sequences. However, identification was not possible in the [10-10] zone axis due to the absence of additional diffraction spots. Basal plane dislocations (BPDs) were investigated in the TEM specimen prepared along the [10-10] zone axis using the two-beam technique. BPDs were two Shockley partial dislocations with a stacking fault (SF) between them. Shockley partial BPDs arrayed along the [0001] growth direction were observed in the investigated 4H-SiC. This arrayed configuration of Shockley partial BPDs cannot be recognized from the plan view TEM with the [0001] zone axis. The evaluated distances between the two Shockley partial dislocations for the investigated samples were similar to the equilibrium distance, with values of several hundreds of nanometers or even values as large as over a few micrometers.

• 자연과학논문집
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• 제7권
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• pp.83-90
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• 1995

탄소함량이 다른 두 Hadfield's강의 (고Mn강) 소성에 관한 연구를, 냉간압연시 나타나는 금속미세조직, texture등으로 조사하였다. Low carbon Hadfield's steel (LCHS, 0.65 wt. % C)에서는 적층결함, 쌍정및 brass type shear bands가 냉간압연시 나타나고, 이때 쌍정은 Intrinsic적층결함이 차곡차곡 쌓여서 나타나는것으로 생각된다. Texture 는 70-30 황동과 초기에는 비슷하나, 40% 이상의 변형에서는 마르텐사이트 상변화에 의해서 이상 texture가 나타난다. 한편 high carbon Hadfield's steel (HCHS, 1.35 wt. % C)에서는 전위엉킴, 쌍정및 copper and brass type shear bands가 소성 변형시 나타난다. Texture 는 70-30 황동과 비슷하고 이상 texture는 나타나지않고있다. 이러한 사실은 HCHS에서 마르텐사이트 상변화가 나타나지 않는것과 또 탄소원자가 편석되지 않는것과 잘일치하고 있다. LCHS와 HCHS사이의 미세조직과 texture의 변화에 많은 차이점을 보일지라도, 적층결함에너지의 차이는 매우작고 약 ($2 mJm^-2$), 탄소편석이 오직 LCHS에서만 일어나고 있다. 따라서 탄소와 같은 작은 원자의 편석이 미세조직 뿐만아니라, texture에 영향을 미치는 것을 생각 할 수 있다. 이러한 탄소의 편석은 LCHS에서 마르텐사이트 상변화와도 관계가 깊다.

• 전자공학회논문지A
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• 제31A권7호
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• pp.85-94
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• 1994

A high-resolution transmission electron microscopy study of the solid phase crystallization of the amorphous silicon thin films, deposited on SiOS12T at 52$0^{\circ}C$ by low pressure chemical vapor deposition and annealed at 55$0^{\circ}C$ in a dry N$_{2}$ ambient was carried out so that the arrangement of atoms in the crystalline silicon and at the amorphous/crystalline interface of the growing grains could be understood on an atomic level. Results show that circular crystalline silicon nuclei have formed and then the grains grow to an elliptical or dendritic shape. In the interior of all the grains many twins whose{111} coherent boundaries are parallel to the long axes of the grains are observed. From this result, it is concluded that the twins enhance the preferential grain growth in the <112> direction along {111} twin planes. In addition to the twins. many defect such as intrinsic stacking faults, extrinsic stacking faults, and Shockley partial dislocations, which can be formed by the errors in the stacking sequence or by the dissociation of the perfect dislocation are found in the silicon grain. But neither frank partial dislocations which can be formed by the condensation of excess silicon atoms or vacancies and can form stacking fault nor perfect dislocations which can be formed by the plastic deformation are observed. So it is concluded that most defects in the silicon grain are formed by the errors in the stacking sequence during the crystallization process of the amorphous silicon thin films.

• Applied Microscopy
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• 제25권3호
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• pp.82-89
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• 1995

지금까지의 실험결과에서 다음과 같은 요약할 수 있다. 1) 사원계 $Zn_{1-x}Mg_{x}S_y$ $S_{1-y}$(x=0.13, y=0.16) 에피층은 다소 불규칙한 성장을 나타내어 역삼각형의 결함과 길고 직선인 적층결함으로 형성된 수지상 형태가 발견되었다. 2)역삼각형 결함은 {111}면에 형성된 적층결함으로 둘러싸여 있고 내부에는 결함이 없으나 계면과 수직인 방향인 <001>방향으로 콘트라스트 차이를 이루는 밴드가 형성되었다. 3) 기판과 정합을 이루고 있고 결함이 없는 ZnSe 버퍼 층이 관찰되었으며 결함 및 므와레 줄무늬는 버퍼층과 4원계 에피층과의 계면에서 형성된다. 4) 4원계 에피층에 형성된 적층결함은 Mg 원소의 효과로 길이가 60nm 이상 폭이 40nm 이상의 넓은 간격을 이루고 있다. 5) 긴 적층결함으로 둘러쌓인 수지상 구조에는 국부적으로 주기를 이루며 강한 콘트라스트 차이를 나타내는 줄무늬가 관찰되는데, 이는 Mg 및 S의 국부적인 화학적 조성차이에 기인한 탄성 변형 효과로 생각된다.

• 한국세라믹학회지
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• 제55권3호
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• pp.285-289
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• 2018

We synthesized silicon carbide (${\beta}-SiC$) nanowires with nano-scale diameter (30 - 400 nm) and micro-scale length ($50-200{\mu}m$) on a porous body using low-grade silica and carbon black powder by carbothermal reduction at $1300-1600^{\circ}C$. The SiC nanowires were formed by vapor-liquid-solid deposition with self-evaporated Fe catalysts in low-grade silica. We investigated the characteristics of the SiC nanowires, which were grown on a porous body with Ar flowing in a vacuum furnace. Their structural, optical, and electrical properties were analyzed with X-ray diffraction (XRD), transmission electron microscopy (TEM), and selective area electron diffraction (SAED). We obtained high-quality SiC single crystalline nanowire without stacking faults that may have uses in industrial applications.

• Applied Microscopy
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• 제27권3호
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• pp.257-263
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• 1997

Microstructural characterizations of II-VI blue laser diodes which consist of quaternary $Zn_{1-x}Mg_xS_ySe_{l-y}$ cladding layer, ternary $ZnS_ySe_{l-y}$ guiding layer and $Zn_{0.8}Cd_{0.2}Se$ quantum well as active layer were carried out using the transmission electron microscope working at 300 kV. Even though the entire structure is pseudomorphic to GaAs substrate, the structure had contained numerous extended stacking faults and dislocations which had created at ZnSe/GaAs interfaces and then further grown to the top of the epilayers. These faults might be expected to cause the degradation and shortening the lifetime of laser devices.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.567-568
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• 2006

We investigate the structures and the formation energy of inversion domain boundaries (IDBs) using the Tersoff empirical potential. Four kinds of IDBs ( A and B types for IDB* and Holt ) are considered. The IDBs with A type are energetically favorable compared to B type with the structural instability. The IDB* is also more stable than the Holt type in spite of fourfold and eightfold rings of bonds. We calculate the atomic configurations of the Holt IDBs induced by the interactions of the IDB* with the stacking faults $I_1$ and $I_2$. The stacking fault $I_2$ interacted with $I_1$ on the IDB induces the structural transformation from IDB* to Holt type.