• Title/Summary/Keyword: Stacking Faults

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Synthesis of Silicon Carbide Whiskers (II): Stacking Faults (탄화규소 휘스커의 (II): 적층결함)

  • 최헌진;이준근
    • Journal of the Korean Ceramic Society
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    • v.36 no.1
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    • pp.36-42
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    • 1999
  • Stacking faults in SiC whiskers grown by three different growth mechanisms; vapor-solid(VS), two-stage growth(TS), and vapor-liquid-solid (VLS) mechanism in the carbothermal reduction system were investigated by X-ray diffraction(XRD) and transmission electron microscopy (TEM). The content of stacking faults in SiC whiskers increased with decreasing the diameter of whiskers, i.e., the small diameter whiskers (<1 $\mu\textrm{m}$) grown by the VS, TS, and VLS mechanisms have heavy stacking faults whereas the large diameter whiskers(>2$\mu\textrm{m}$) grown by the VLS mechanism have little stacking faults. Heavy stacking faults of small diameter whiskers was probably due to the high specific lateral surface area of small diameter whiskers.

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Processing and Characterization of a Direct Bonded SOI using SiO$_2$ Thin Film (SiO$_2$ 박막을 이용한 SOI 직접접합공정 및 특성)

  • 신동운;최두진;김긍호
    • Journal of the Korean Ceramic Society
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    • v.35 no.6
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    • pp.535-542
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    • 1998
  • SOI(silicon oninsulator) was fabricated through the direct bonding of a hydrophilized single crystal Si wafer and a thermally oxidized SiO2 thin film to investigate the stacking faults in silicon at the Si/SiO2 in-terface. At first the oxidation kinetics of SiO2 thin film and the stacking fault distribution at the oxidation interface were investigated. The stacking faults could be divided into two groups by their size and the small-er ones were incorporated into the larger ones as the oxidation time and temperature increased. The den-sity of the smaller ones based critically lower eventually. The SOI wafers directly bonded at the room temperature were annealed at 120$0^{\circ}C$ for 1 hour. The stacking faults at the bonding and oxidation interface were examined and there were anomalies in the distributions of the stacking faults of the bonded region to arrange in ordered ring-like fashion.

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A Study on Nucleation, Growth and Shrinkage of Oxidation Induced Stacking Faults (OSF) -Part 1: Nucleation and Thermal Behavior of Oxidation Induced Stacking Faults(OSF) (산화 적층 결합의 생성, 성장 및 소멸에 관한 연구 - 제1부:산화 적층 결함의 생성과 열적 거동)

  • 김용태;김선근;민석기
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.7
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    • pp.759-766
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    • 1988
  • the effect of heat treatment in oxygen ambient on the nucleation and growth of oxidation induced stacking faults(OSF) in n-type(100)silicon wafer has been investigated. The growth of OSF is determind as a function of oxygen concentration in silicon wafer, heat treatment time and temperature, and the activation energy for the growth of OSF can be obtained from the growth kinetics. The activation energies are respectively 2.66 eV for dry oxidation and 2.37 eV for wet oxidation. In this paper, we have also studied the structural feature of OSF with the comparison of optical microscopic morphology and crystalline structure.

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Processing and Characterization of a Direct Bonded SOI using SiO$_2$ Thin Film (SiO$_2$ 박막을 이용한 SOI 직접접합공정 및 특성)

  • 유연혁;최두진
    • Journal of the Korean Ceramic Society
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    • v.36 no.8
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    • pp.863-870
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    • 1999
  • SOI(silicon on insulafor) was fabricated through the direct bonding using (100) Si wafer and 4$^{\circ}$off (100) Si wafer to investigate the stacking faults in silicon at the Si/SiO2 oxidized and bonded interface. The treatment time of wafer surface using MSC-1 solution was varied in order to observe the effect of cleaning on bonding characteristics. As the MSC-1 treating time increased surface hydrophilicity was saturated and surface microroughness increased. A comparison of surface hydrophilicity and microroughness with MSC-1 treating time indicates that optimum surface modified condition for time was immersed in MSC-1 for 2 min. The SOI structure directly bonded using (100) Si wafer and 4$^{\circ}$off (100) Si wafer at the room temperature were annealed at 110$0^{\circ}C$ for 30 min. Then the stacking faults at the bonding and oxidation interface were examined after the debonding. The results show that there were anomalies in the gettering of the stacking faults at the bonded region.

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Microstructural Observations on Quaternary ZnMgSSe/GaAs Epilayer Grown by MBE (MBE로 성장시킨 4원계 ZnMgSSe/GaAs 에피층의 미세구조 관찰)

  • Lee, Hwack-Joo;Ryu, Hyun;Park, Hae-Sung;Kim, Tae-Il
    • Applied Microscopy
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    • v.25 no.3
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    • pp.82-89
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    • 1995
  • High resolution transmission electron microscopic observations on quaternary $Zn_{1-x}Mg_{x}S_y$ $S_{1-y}$(x=0.13, y=0.16) on (001) GaAs substrate grown up to $1.2{\mu}m$ with 20nm ZnSe buffer layer at $300^{\circ}C$ by RIBER MBE system which has a single growth chamber were investigated by HRTEM working at 300kV with point resolution of 0.18nm. The ZnSe buffer layer maintains the coherency with the GaAs substrate. The stacking faults had begun at ZnSe buffer/$Zn_{1-x}Mg_{x}S_{y}S_{1-y}$ interface, whose length and spacing became larger than 60nm and wider than 40nm, respectively. The inverse triangular stacking fault was bounded by stacking faults which were formed on {111} planes with different variants. There exists rare stacking faults inside the triangular defect. The epilayer surrounded by the straight stacking faults, which had formed in the same direction, became the columnar structure.

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Thermal oxidation and oxidation induced stacking faults of tilted angled (100) silicon substrate (저탈각 (100) Si 기판의 열산화 및 적층 결함)

  • 김준우;최두진
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.2
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    • pp.185-193
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    • 1996
  • $2.5^{\circ}\;and\;5^{\circ}$ tilted (100) Si wafer were oxidized in dry oxygen, and the differences in thermal oxidation behavior and oxidation induced stacking faults (OSF) between specimens were investigated. Ellipsometer measurements of the oxide thickness produced by oxidation in dry oxygen from 900 to $1200^{\circ}C$ showed that the oxidation rates of the tilted (100) Si were more rapid than those of the (100) Si and the differences between them decreased as the oxidation temperature increased. The activation energies based on the parabolic rate constant, B for (100) Si, $2.5^{\circ}$ off (100) Si and $5^{\circ}$ off (100) Si were 27.3, 25.9, 27.6 kcal/mol and those on the linear rate constant, B/A were 58.6, 56.6, 57.6 kcal/mol, respectively. Also, considerable decrease in the density of oxidation induced stacking faults for the $5^{\circ}$ off (100) Si was observed through optical microscopy after preferentially etching off the oxide layer, and the angle of stacking faults were changed with tilted angles.

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Long Period Structures and Stacking Faults in Rapidly Solidified Powder Metallurgy (RS P/M) Mg97Zn1Y2 Alloy (급속응고 분말법으로 제조된 Mg97Zn1Y2 합금의 장주기 구조와 적층결함)

  • Park, Eun-Kee;Kim, Woo-Jung;Kim, Taek-Soo;Lee, Kap-Ho
    • Korean Journal of Materials Research
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    • v.19 no.8
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    • pp.447-451
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    • 2009
  • The long-period stacking order (LPSO) structures and stacking faults (SFs) in rapidly solidified powder metallurgy (RS P/M) $Mg_{97}Zn_1Y_2$ alloy were investigated by high resolution transmission electron microscopy (HRTEM) observations. The 18R-type LPSO structure with a stacking sequence of ACBCBCBACACACBABAB and a period of 4.86 nm was observed in the as-extruded RS P/M $Mg_{97}Zn_1Y_2$ alloy. After annealing at 773 K for 5 hr, the 18R-type LPSO structure was transformed to the 14H-type LPSO structure with a stacking sequence of ABABABACBCBCBC and a period of 3.64 nm. The 24R-type LPSO structure containing 24 atomic layers of ABABABABCACACACABCBCBCBC with period of 6.18 nm coexists with the 14H-type LPSO structure in the same grains. The LPSO structures contain intrinsic Type II SFs such as BCB/CABA and ABA/CBCB stacking sequences of a closely packed plane.

The influence of mechanical damage on the formation of the structural defects on the silicon surface during oxidation (규소 결정 표면의 구조 결함의 형성에 미치는 기계적 손상의 영향)

  • Kim, Dae-Il;Kim, Jong-Bum;Kim, Young-Kwan
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.15 no.2
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    • pp.45-50
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    • 2005
  • During oxidation process, several type of defects are formed on the surface of the silicon crystal which was damaged mechanically before oxidation. As the size of abrasive particle increases multiple dislocation loops are produced favorably over oxidation-induced stacking faults, which are dominantly produced when ground with finer abrasive particle. These defects are not related with the crystal growth process like Czochralski or directional solidification. During directional solidification process, twins and stacking faults are the two major defects observed in the bulk of the silicon crystal. On the other hand, slip dislocations produced by the thermal stress are not observed. Thus, not only in single crystalline silicon crystal but also in multi-crystalline silicon, extrinsic gettering process with programmed production of surface defects might be highly applicable to silicon wafers for purification.

The Influence of Vanadium Addition on Fracture Behavior and Martensite Substructure in a Ni-36.5at.%Al Alloy (Ni-36.5at.%Al 합금에서 V 첨가가 파괴거동 및 마르텐사이트 내부조직에 미치는 영향)

  • Kim, Young Do;Choi, Ju;Wayman, C. Marvin
    • Analytical Science and Technology
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    • v.5 no.2
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    • pp.203-211
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    • 1992
  • Fracture behavior and martensite substructure of Ni-36.5at.%Al alloy were investigated with the addition of vanadium which is known as scavenging element of grain boundary. The fracture surfaces were examined by scanning electron microscopy and the EDX spectrometer was applied for composition analysis of fracture surfaces. The substructure of martensite was studied by transmission electron microscopy. By addition of vanadium, fracture surfaces show mixed modes of intergranular and transgranular fracture and more Al content is found on the grain boundaries. For Ni-36.5at.%Al alloy, the planar faults observed in the martensite plates are the internal twins. By increasing the vanadium content, the modulated structure with stacking faults and dislocations dominates while the twinned martensite disappears. The stacking fault is determined to be extrinsic due to the substitution of V for Al. It is concluded that the segregation of sulfur on the high-energy state stacking fault area suppresses the intergranular fracture.

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