• Journal of the Korean Ceramic Society
• /
• v.30 no.3
• /
• pp.206-214
• /
• 1993

Coherent precipitation of Zn3P2 during Zn diffusion in a GaInAsP/InP heterostructure was studied using high-resolution transmission electron microscopy. Zn-diffusion-induced intermixing of Ga and In across the GaInAsP/InP heterointerface provided a Ga-mixed InP region which was nearly lattice-matched with Zn3P2 crystal and thus allowed thecoherent precipitation of Zn3P2. The Zn3P2 precipitates were preferentially nucleated at stacking faults which were formed to relax interfacial strain built up by the intermixing. The precipitates were grown to planar epitaxial layer along (100) plane in the lattice-matched region. The TEM images and diffraction pettern revealed that the tetragonal Zn3P2 crystals were coherently matched to the fcc structured GaInP matrix by the {{{{ SQRT {2} $\times$ SQRT {2} $\times$2 }} arrangement. The precipitation reaction of Zn3P2 was explained by an atomic migration model based on the kick-out mechanism.

• Nuclear Engineering and Technology
• /
• v.4 no.3
• /
• pp.203-213
• /
• 1972

The precipitation sequence of Inconel 718 alloy, aged at $760^{\circ}C$ for times up to 200 hr, has been studied by means of electron microscopy and X-ray diffraction methods. The dominant hardening phase was identified as the metastable, body-centered tetragonal $Ni_3Nb$ Phase in the morphology of platelets. The other phases identified in the aging sequence were (Nb, Ti)C and the stable acicular phase of orthorhombic $Ni_3Nb.$ The observations were made on the interaction of dislocations with the precipitates in the underaged condition. The shearing of the precipitates and the planar defects, e.g., stacking faults on i1101 planes of the intermetallic phase, were observed.

• Journal of the Korean Ceramic Society
• /
• v.31 no.2
• /
• pp.147-154
• /
• 1994

The imperfections of LiTaO3 crystals grown from the Pt-Rh and the Ir crucible were investigated with X-ray diffraction, optical and electron microscope. The growth direction was <100>h and the plane parallel to the plane connecting two main growth ridges was (012)h which would be the main cleavage plane. The dislocation density in the specimen cut parallel to (012)h plane increased with polishing time and the inverted ferroelectric microdomains were induced based on this dislocations. Such imperfections as 180$^{\circ}$ domains, microcracks, dislocations and stacking faults. could be found in the LiTaO3 crytals. The crystal contaminated with lots of Rh form Pt-Rh crucible during the crystal growing under air atmosphere contained more imperfections. The main cleavage plane and subgrain boundary parallel to its growing axis might be the main source of reducing the mechnical strength during the wafering process.

• Journal of the Korean Ceramic Society
• /
• v.32 no.10
• /
• pp.1139-1146
• /
• 1995

$\beta$-SiC whiskers could be formed from a system of mullite-carbon-hydrogen by VLS mechanism at elevated temperatures. It was considered that methane gases were generated from the reaction of hydrogen gases with carbon black, and were reacted with mullite to produce two kinds of gases; silicon suboxide (SiO) and carbon monoxide (CO) of precursors of SiC. With increasing the synthesizing temperature up to 146$0^{\circ}C$, the formation of $\beta$-SiC whisker increased from 0.58 mg/$\textrm{cm}^2$ to 3.98 mg/$\textrm{cm}^2$ on the basis of unit area of carbon block, and the diameters of whiskers had their uniformity due to the reduction in stacking faults.

• Corrosion Science and Technology
• /
• v.15 no.5
• /
• pp.237-244
• /
• 2016

2205 duplex stainless steels have been used for the construction of the marine environment, because of their excellent corrosion resistance and high strength. However, the resistance to hydrogen embrittlement (HE) may be less than that of 316L austenitic stainless steel. The reason why 316L stainless steels have better resistance to HE is associated with crystal structure (FCC, face centered cubic) and the higher stacking faults energy than 2205 duplex stainless steels. Furthermore 2205 stainless steels with or without tungsten were also examined in terms of HE. 2205 stainless steels containing tungsten is less resistible to HE. It is because dislocation tangle was formed in 2205 duplex stainless steels. Slow strain-rate tensile test (SSRT) was conducted to measure the resistance to HE under the cathodic applied potential. Hydrogen embrittlement index (HEI) was used to evaluate HE resistance through the quantitative calculation.

• Journal of the Korean Ceramic Society
• /
• v.28 no.12
• /
• pp.981-988
• /
• 1991

Various crystal defects such as voids, inclusions dislocations, stacking faults and precipitates were observed in the Czochralski-grown Bi12GeO20 crystals. Particularly, precipitates were found in the whole crystals. The phase of these precipitates was identified as Bi4Ge3O12 by EPMA and transmission electron microscopy. The precipitates were produced by pulling rapidly from a non-stoichiometric charge. During the pulling of Bi12GeO20 crystals, the melt composition of stoichiometric charge was changed Bi-deficent with gradual volatilization of Bi2O3. Precipition of the second phase may have been affected by an abrube thermal stress. By adding excess Bi2O3 into the stoichiometric batch, the precipitation of Bi4Ge3O12 was suppressed. At a pulling speed of 2 mm/hr, clear and precipitate from crystals of Bi12GeO20 were grown from the melt of the Bi2O3 excess charge.

• Journal of the Korean Ceramic Society
• /
• v.46 no.5
• /
• pp.510-514
• /
• 2009

The microstructure and mechanical behavior of deformed silicon were characterized using transmission electron microscopy and nanoindentation. Structural defects such as stacking faults and dislocations were observed through the diffraction contrast in transmission electron microscopy. The mechanical properties of deformed Si and 111 Si wafer and mechanical behaviors during contact loading were also characterized using nanoindentation. The hardness values of silicon samples were ${\sim}10$ GPa and the elastic modulus were varied with indentation conditions. Elbow or pop-out behaviors were found in load-displacement curves of silicon samples during nanoindentation. Deformed silicon showed 'pop-out' behavior more frequently under the load of 10 mN, which is attributed to the structural defects in deformed silicon.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.524-526
• /
• 2009

The effects of In and Ga contents on characteristics of InGaZnO (IGZO) films grown by a sol-gel method and their thin film transistors (TFTs) have been investigated. Excess In incorporation into IGZO enhances the field effect mobilities of the TFTs due to the increase in conducting path ways, and decreases the grain size and the surface roughness of the films because more $InO_2^-$ ions induce cubic stacking faults with IGZO. Ga incorporation into results in decrease in carrier concentration of films and off-current of TFTs since Ga ion forms stronger chemical bonds with oxygen than Zn and In ions, acting as a carrier killer.

• Applied Microscopy
• /
• v.48 no.4
• /
• pp.130-131
• /
• 2018

Electron channeling contrast imaging (ECCI) is one of the imaging techniques in scanning electron microscopy based on a variation in electron backscattering yield depending on the direction of the primary electron beam with respect to the crystal lattice. The ECCI provides not only observation of the distribution of individual grains and grain boundaries but also identification of the defects such as dislocations, twins, and stacking faults. The ECCI at the interface between recrystallized and deformed region of shot peening treated nickel clearly demonstrates the microstructural evolution during the recrystallization including original grain boundaries, and thus can provide better insight into the recrystallization behavior.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.24 no.4
• /
• pp.145-150
• /
• 2014

GaN nanorods were grown on the apex of GaN stripes by three dimensional selective growth method. $SiO_2$ mask was partially removed only on the apex area of the GaN stripes by an optimized photolithography for the selective growth. Metallic Au was deposited only on the apex of the GaN stripes and a selective growth of GaN nanorods was followed by a metal organic vapor phase epitaxy (MOVPE). We confirmed that the shape and size of the GaN nanorods depend on growth temperature and flow rates of group III precursor. GaN nanorods were grown having a taper shape which have sharp tip and triangle-shaped cross section. From the TEM result, we confirmed that threading dislocations were rarely observed in GaN nanorods because of the very small contact area for the selective growth. Stacking faults which might be originated from a difference of the crystal facet directions between the GaN stripe and the GaN nanorods were observed in the center area of the GaN nanorods.