• Journal of Korean Society of Forest Science
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• v.90 no.5
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• pp.608-618
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• 2001

To understand the weathering processes of the soil by submicroscopic method is very important to realize the properties of the soils. In this study soil formation processes show every steps to the changes in chemical and mechanical properties and the submicroscopic characteristics of soil weathering on the profiles of forest soils derived from granite in southern part of Korea. Fecal pellets(SEM) are given a full detail of the positive activities of the forest soil animals; mainly invertebrates in the O horizon and the E horizon. External shapes of fecal pellets have been divided into five groups : spherical, ellipsoidal, cylindrical, platy and threadlike. But doughnutlike form of fecal pellets is observed in this study. The soluble and suspended materials in the soils move downwards by percolation from the A horizon to the B or the BC horizons, and result in the illuviation cutans(SEM) on the ped surface of the lower horizon and deposited stack of kaolinite. Illuviated cutans are deposited on the ped surface even in the depth of 312cm in the BC horizon as well as the Bt horizon and comprise of fine silt, coarse clay and fine clay. A lot of halloysites are observed on the cutan surface. Halloysite formation from feldspars has been well known but a lot of hallyosite formation are observed in this study. The formation were predicted by Jackson(1962), inferred by Wada and Kakuto(1983a, b) and proved evidently by Cho and Mermut(1992a, b). This also suggests that halloysites in the soils derived from granite are formed a lot from ferruginous chlorites. The release of Fe from the chlorite structure are significant pedogenic processes and newly formed Fe oxides imparted a red color to the soils. The iron oxides particles, which are ejected and recrystalized, aggregate thickly on the edge of the ferruginous chlorites, and this indicates the release of structural Fe from weathered chlorites. Hematites and goethites are frequent in the fine clay in this soils.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.302-309
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• 2009

We fabricated a Si nano floating gate memory with Schottky barrier tunneling transistor structure. The device was consisted of Schottky barriers of Er-silicide at source/drain and Si nanoclusters in the gate stack formed by LPCVD-digital gas feeding method. Transistor operations due to the Schottky barrier tunneling were observed under small gate bias < 2V. The nonvolatile memory properties were investigated by measuring the threshold voltage shift along the gate bias voltage and time. We obtained the 10/50 mseconds for write/erase times and the memory window of $\sim5V$ under ${\pm}20\;V$ write/erase voltages. However, the memory window decreased to 0.4V after 104seconds, which was attributed to the Er-related defects in the tunneling oxide layer. Good write/erase endurance was maintained until $10^3$ write/erase times. However, the threshold voltages moved upward, and the memory window became small after more write/erase operations. Defects in the LPCVD control oxide were discussed for the endurance results. The experimental results point to the possibility of a Si nano floating gate memory with Schottky barrier tunneling transistor structure for Si nanoscale nonvolatile memory device.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.1
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• pp.39-46
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• 2021

The quantitative measurement of interfacial adhesion energy (Gc) of multilayer thin films for Cu interconnects was investigated using a double cantilever beam (DCB) and 4-point bending (4-PB) test. In the case of a sample with Ta diffusion barrier applied, all Gc values measured by the DCB and 4-PB tests were higher than 5 J/㎡, which is the minimum criterion for Cu/low-k integration without delamination. However, in the case of the Ta/Cu sample, measured Gc value of the DCB test was lower than 5 J/㎡. All Gc values measured by the 4-PB test were higher than those of the DCB test. Measured Gc values increase with increasing phase angle, that is, 4-PB test higher than DCB test due to increasing plastic energy dissipation and roughness-related shielding effects, which matches well interfacial fracture mechanics theory. As a result of the 4-PB test, Ta/Cu and Cu/Ta interfaces measured Gc values were higher than 5 J/㎡, suggesting that Ta is considered to be applicable as a diffusion barrier and a capping layer for Cu interconnects. The 4-PB test method is recommended for quantitative adhesion energy measurement of the Cu interconnect interface because the thermal stress due to the difference in coefficient of thermal expansion and the delamination due to chemical mechanical polishing have a large effect of the mixing mode including shear stress.