• 한국전기전자재료학회논문지
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• 제21권9호
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• pp.825-828
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• 2008

$Sr_xBa_{(1-x)}TiO_3$ red phosphors doped with Pr(0.13 mol%) and Al(O.23 mol%) were synthesized by solid state reaction method. Orthorhombic perovskite structure with increasing value of x in $Sr_xBa_{(1-x)}TiO_3$:Pr,Al phosphors changed to cubic perovskite structure. Emission bands at 615 nm and 492 nm in $Sr_{0.25}Ba_{0.75}TiO_3$:Pr,Al and $BaTiO_3$:Pr,Al phosphors were observed at room temperature. The main cause of green luminescence at 492 nm was explained by the change of the 4f5d band.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.609-612
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• 2002

In this study, the electrical properties were investigated for the deposited Ba,Sr)(Nb,Ti)$O_3$[BSNT] thin films grown on $Pt/TiO_2/SiO_2/Si$ substrate by RF sputtering method. The structural properties of the BSNT thin films affected by the $Ar/O_2$ rates were investigated. In the case of the BSNT thin films deposited with condition of 60/40$(Ar/O_2)$ ratio, the $BaTiO_3$, $SrTiO_3$ and $BaNbO_3$ phases were showed. The composition ratio of Nb and Ti in the BSNT thin films were nearly equivalent. Also, in the BSNT thin films deposited with condition of 60/40 and 80/20$(Ar/O_2)$ ratios, the composition of Ba, Sr, Nb and Ti were relatively uniform. The Ba, Sr, Nb and Ti in the BSTN thin films were not diffused into the Pt layer.

• 분석과학
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• 제6권2호
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• pp.239-246
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• 1993

ITO coated glass, bare glass, 그리고 (100)Si 기판 위에 증착된 $(BaSr)TiO_3$ 박막의 구조는 기판의 종류에 관계없이 변하지 않았으나 결정성은 다결정 ITO층과 (100)Si 기판에 있어서 증대되었다. ITO coated glass 기판 위에 증착된 $(BaSr)TiO_3$ 박막의 조성은 거의 화학양론적으로 일치하였으며 ((Ba+Sr)/Ti=1.08~1.09) 증착 중 상당히 치밀하고 균질하였다. 그러나 증착온도가 증가함에 따라 성장한 박막과 ITO층 사이에, 그리고 ITO층과 base glass 사이에 확산이 보다 심화되었다. ITO coated glass 기판 위에 증착된 $(BaSr)TiO_3$ 박막은 상당히 투명하였으며(투과율 약 80%) 굴절률($n_f$)은 기판온도의 증가에 따라 2.138~2.286이었다.

• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.317-321
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• 2003

In this study, the structural properties were Investigated for the deposited (Ba,Sr)(Nb,Ti)O$_3$[BSNT] thin films grown on Pt/TiO$_2$/SiO$_2$/Si substrate by RF sputtering method. The structural properties of the BSNT thin films affected by the Ar/02 ratios were Investigated. In the case of the BSNT thin films deposited with condition of 60/40(Ar/O$_2$) ratio, the BaTiO$_3$, SrTiO$_3$ and BaNbO$_3$ phases were showed. The composition ratio of Nb and Ti in the BSNT thin films were nearly equivalent. Also, in the BSNT thin films deposited with condition of 60/40 and 80/20(Ar/O$_2$) ratios, the composition of Ba, Sr, Nb and Ti were relatively uniform. The Ba, Sr, Nb and Ti in the BSTN thin films were not diffused into the Pt layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.682-685
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• 2002

The $0.96MgTiO_3-0.04SrTiO_3$ ceramics with $B_2O_3$(10wt%) were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature by XRD. According to the X-ray diffraction pattern of the $0.96MgTiO_3-0.04SrTiO_3$ ceramics with $B_2O_3$(10wt%), the ilmenite $MgTiO_3$ and perovskite $SrTiO_3$ structures were coexisted and secondary phase of the $MgTi_2O_5$ were appeared. In the case of $0.96MgTiO_3-0.04SrTiO_3+B_2O_3$(10wt%) ceramics sintered $1225^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 19.82, 62,735GHz, $-2.983ppm/^{\circ}C$, respectively.

• 한국전기전자재료학회논문지
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• 제19권5호
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• pp.422-426
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• 2006

[ $Sr_xCa_{(1-x)}TiO_3$ ] red phosphors doped with Pr(0.13 mol%) and Al(0.23 mol%) were synthesized by solid state reaction method. Change of crystal structure occurred in $Sr_xCa_{(1-x)}TiO_3:Pr,Al$ phosphors with increasing value of x. Green and red luminescence were observed from $SrTiO_3:Pr,Al$ phosphors at low temperature. However, only red luminescence in the case of $CaTiO_3:Pr,Al$ phosphors was measured at low temperature. The main cause of green luminescence was explained by the bandgap reduction.

• 한국전기전자재료학회논문지
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• 제20권6호
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• pp.527-530
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• 2007

[ $SrTiO_3$ ] red phosphors doped with Pr, Er and Al were synthesized by solid state reaction method. Three emission peaks in photoluminescence spectra of the $SrTiO_3:Eu$ Phosphors were observed at 583 nm, 610 nm and 685 nm. The emission peaks in the $SrTiO_3:Eu$ phosphors were associated with charge-transfer states. The decrease of photoluminescence intensity in $SrTiO_3:Eu,Al$ phosphors with doping Al ions was interpreted by the change of charge-transfer states.

• 한국표면공학회지
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• 제29권6호
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• pp.839-846
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• 1996

Epitaxial (La, Sr)$CoO_3/Pb(Zr,\;Ti)O_3/(La,\;Sr)CoO_3$by pulsed laser deposition for ferroelectric field effect transistor. Epitaxial $LaCoO_3/Pb(Zr,\;Ti)O_3/(La,\;Sr)CoO_3$ heterostructures exhibited 70$\mu C/cm^2$ and 17 $\mu C/cm^2$at a positively and negatively poled states, respectively. On the other hand, epitaxial (La, Sr)$CoO_3/Pb(Zr,\;Ti)O_3/LaCoO_3$heterostructures show the remnant polarization states opposite to the $LaCoO_3/Pb(Zr,\;Ti)O_3/(La,\;Sr)CoO_3$ heterostructures. This indicates that the interface between (La, Sr)$CoO_3$ (LSCO) and $Pb(Zr, Ti)O_3(PZT)$ layers affects the asymmetric polarization remanence through electrochemical nature. The resistivity of $LaCoO_3$ (LCO) layer was found to be dependent on an ambient oxygen, primarily the ambient oxygen pressure during deposition. The resistivity of the LCO layer varied in the range of 0.1-100 $\Omega$cm. It is suggested that, with an appropriate resistivity of the LCO layer, the LCO/PZT/LSCO heterostructure can be used as the ferroelectric field effect transistor.

• 한국세라믹학회지
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• 제24권3호
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• pp.270-276
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• 1987

The microstructure and dielectric properties of a SrTiO3-based GBL (Grain Boundary Layer) capacitor were investigated. The 0.6 mol% Nb2O5 doped SrTiO3 was sintered for 3 hr at 1450$^{\circ}C$ in mixed gas(N2/H2) atmosphere. The Nb2O5 promoted the grain growth of the SrTiO3 ceramics was decreased with the amount of Nb2O5. The oxide mixture(PbO, Bi2O3, B2O3) were painted on the reduced specimen and fired at 1000$^{\circ}C$ to 1100$^{\circ}C$ in air. The penetrated oxide mixture into specimen were located in grain boundaries. A SrTiO3-based GBL capacitor had the apparent permittivity of about 3.0${\times}$104, the dielectric loss of 0.01-0.02, and insulating resistance of 108-109$\Omega$.cm. The capacitor had the stable temperature coefficient of capacitance and exhibited dielectric dispersion over 107 Hz. The capacitance-voltage measurements indicated that the grain boundary was composed of the continuous insulating layers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.112-116
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• 2002

The $0.95MgTiO_3-0.05SrTiO_3$ ceramics with $V_2O_5$(10wt%) were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperatue by XRD. According to the X-ray diffraction pattern of the $0.95MgTiO_3-0.05SrTiO_3$ ceramics with $V_2O_5$(10wt%), the ilmenite $MgTiO_3$ and perovskite $SrTiO_3$ structures were coexisted and secondary phase $MgTi_2O_5$ were appeared. In the case of $0.95MgTiO_3-0.05SrTiO_3$ ceramics with $V_2O_5$(10wt%), dielectric constant, quality factor and temperature coefficient of resonant frequency were 15.84~18.28, 12627~23138GHz, -21.414~1.568$ppm/^{\circ}C$, respectively.