• Korean Journal of Materials Research
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• v.5 no.1
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• pp.3-11
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• 1995

$(TiO_{2})$ thin films were deposited on p-Si(100) substrate by APMOCVD using titanium isopropoxide as a source material. The deposition mechanism was well explained by the simple boundary layer theory and the apparent activation energy of the chemical reaction controlled process was 18.2kcal /mol. The asdeposited films were polycrystalline anatase phase and were transformed into rutile phase after postannealing. The postannealing time and the film thikness as well as the postannealing temperature also affected the phase transition. The C-V plot exhibited typical charateristics of MOS diode, from which the dielectric constant of about 80 was obtained. The capacitance of the annealed film was decreased but those of the Nb or Sr doped films were not changed. I-V characteristics revealed that the conduction mechanism was hopping conduction. The postannealing and the doping of Nb or Sr cause to decrease the leakage current and to increase the breakdown voltage.

• Korean Journal of Materials Research
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• v.20 no.3
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• pp.137-141
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• 2010

The $(1-x)La_{0.7}Sr_{0.3}MnO_3(LSMO)/xZnFe_2O_4$(ZFO) (x = 0, 0.01, 0.03, 0.06 and 0.09) composites were prepared by a conventional solid-state reaction method. We investigated the structural properties, magnetic properties and electrical transport properties of (1-x)LSMO/xZFO composites using X-ray diffraction (XRD), scanning electron microscopy (SEM), field-cooled dc magnetization and magnetoresistance (MR) measurements. The XRD and SEM results indicate that LSMO and ZFO coexist in the composites and the ZFO mostly segregates at the grain boundaries of LSMO, which agreed well with the results of the magnetic measurements. The resistivity of the samples increased by the increase of the ZFO doping level. A clear metal-to-insulator (M-I) transition was observed at 360K in pure LSMO. The introduction of ZFO further downshifted the transition temperature (350K-160K) while the transition disappeared in the sample (x = 0.09) and it presented insulating/semiconducting behavior in the measured temperature range (100K to 400K). The MR was measured in the presence of the 10kOe field. Compared with pure LSMO, the enhancement of low-field magnetoresistance (LFMR) was observed in the composites. It was clearly observed that the magnetoresistance effect of x = 0.03 was enhanced at room temperature range. These phenomena can be explained using the double-exchange (DE) mechanism, the grain boundary effect and the intrinsic transport properties together.

• Bulletin of the Korean Chemical Society
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• v.19 no.6
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• pp.661-666
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• 1998

Active reaction sites and electrochemical O2 reduction kinetics on La_{1-x}Sr_xMnO_{3+{\delta}} (x=0.1-0.4)/YSZ (yttria-stabilized zirconia) electrodes are investigated in the temperature range of 700-900 ℃ at $Po_2=10^{-3}$-0.21 atm. Results of the steady-state polarization measurements, which are formulated into the Butler-Volmer formalism to extract transfer coefficient values, lead us to conclude that the two-electron charge transfer step to atomically adsorbed oxygen is rate-limiting. The same conclusion is drawn from the $Po_2$-dependent ac impedance measurements, where the exponent m in the relationship of $I_o$ (exchange current density) ∝ $P_{o_{2}}^m$ is analyzed. Chemical analysis is performed on the quenched Mn perovskites to estimate their oxygen stoichiometry factors (δ) at the operating temperature (700-900 ℃). Here, the observed δ turns out to become smaller as both the Sr-doping contents (x) and the measured temperature increase. A comparison between the 8 values and cathodic activity of Mn perovskites reveals that the cathodic transfer coefficients $({\alpha}_c)$ for oxygen reduction reaction are inversely proportional to δ whereas the anodic ones $({\alpha}_a)$ show the opposite trend, reflecting that the surface oxygen vacancies on Mn perovskites actively participate in the $O_2$ reduction reaction. Among the samples of x= 0.1-0.4, the manganite with x=0.4 exhibits the smallest 8 value (even negative), and consistently this electrode shows the highest ${\alpha}_c$ and the best cathodic activity for the oxygen reduction reaction.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.17 no.3
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• pp.155-165
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• 2024

A hybrid thin film was prepared by doping reduced graphene oxide (rGO) into a sol-gel solution mixed with aluminum, titanium, and strontium using a brush coating method. The annealing temperature was carried out at 160, 260, and 360℃, and the difference in oxidation reaction was observed. The sol-gel solution created during the membrane manufacturing process generates a contractile force due to the shear stress of the brush bristles, forming a microgroove structure. This structure was confirmed through scanning electron microscopy analysis, and the presence of rGO was clearly revealed. As the annealing temperature increases, the oxidation and reduction reactions on the thin film surface become more active, so the intensity of the surface mixture increases. Moreover, the electro-optical properties were stabilized and improved by increasing the intensity of the mixtures. Likewise, the voltage-capacitance values are also significantly improved. Lastly, the transmittance measurement showed that it was suitable for liquid crystal display application.

• Applied Chemistry for Engineering
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• v.19 no.5
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• pp.477-483
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• 2008

$La_{0.7}Sr_{0.3}Co_{0.2}Fe_{0.8}O_{3-{\delta}$ oxide was synthesized by a citrate method and a typical dense membrane of perovskite oxide has been prepared using as-prepared powder by pressing and sintering at $1300^{\circ}C$. Precursor of $La_{0.7}Sr_{0.3}Co_{0.2}Fe_{0.8}O_{3-{\delta}$ prepared by citrate method was investigated by TGA and XRD. Metal-citrate complex in precursor was decomposed into perovskite oxide in the temperature range of $260{\sim}410^{\circ}C$ but XRD results showed $SrCO_3$ existed as impurity at less than $900^{\circ}C$. Electrical conductivity of membrane increased with increasing temperature but then decreased over $700^{\circ}C$ in air atmosphere ($Po_2=0.2atm$) and $600^{\circ}C$ in He atmosphere ($Po_2=0.01atm$) respectively due to oxygen loss from the crystal lattice. The oxygen permeation flux increased with increasing temperature and maximum oxygen permeation flux of $La_{0.7}Sr_{0.3}Co_{0.2}Fe_{0.8}O_{3-{\delta}$ membrane with 1.6 mm thickness was about $0.31cm^3/cm^2{\cdot}min$ at $950^{\circ}C$. The activation energy for oxygen permeation was 88.4 kJ/mol in the temperature range of $750{\sim}950^{\circ}C$. Perovskite structure of membrane was not changed after permeation test of 40 h and the membrane was stable without secondary phase change with 0.3 mol Sr addition.

• Journal of the Korean Ceramic Society
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• v.27 no.1
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• pp.7-12
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• 1990

The influence of MnO2 on the sintering property and PTCR behavior of(Ba0.8Sr0.2)TiO2 has been investigated. And the densities, grain sizes and electrical resitivities of specimens were measured as a function of doping with Mn ion of varying concentration. The density and grain size of the sintered specimens were almost the same regardless of MnO2 addition up to 0.2mol% MnO2. But in the case of 0.25mol% MnO2 addition, abnormal grain growth was appeared. So the grain size distribution was wide and density decreased greatly. The room-temperature resistivity increased as Mn content increased and the temperature coefficient of resistivity was highest in the case of 0.15mol% MnO2 addition.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.22-25
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• 2006

Long lasting phosphor materials are in great demand for their applications in the area of light emitting diodes (LEDs), commercial displays and warning signals. After glow longevity, brightness, photo-resistance and chemical and environment stability are most important qualities that are desired for these materials. Alumina as host lattice with various rare earth elements has been found to be good at the same time inexpensive material for the synthesis of the phosphor materials. This communication explored the effect of mixed rare earth metal on the luminescence properties of these materials for the first time. Various permutations and combinations of $Sr^{2+}$ and $Ba^{2+}$ have been investigated in order to achieve robust and high luminescence characteristics in the tailored phosphor materials.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.182-185
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• 2010

$Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{0.9}Ti_{0.1}]_{0.98}Nb_{0.02}O_3$ (PNZST) thin films were deposited by radio frequency magnetron sputtering on a $(La_{0.5}Sr_{0.5})CoO_3$ (LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with an excess PbO of 10 mole%. The thin films deposited at the substrate temperature of $500^{\circ}C$ crystallized to a perovskite phase after rapid thermal annealing (RTA). The thin films, which annealed at $650^{\circ}C$ for 10 seconds in air, exhibited good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the fabricated PNZST capacitor were approximately $20uC/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2\;{\times}\;10^9$ switching cycles was less than 10%.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.52-55
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• 2009

A red phosphor, $(Sr,Ca)_2P_2O_7:Eu^{2+},Mn^{2+}$, for UV-LED was synthesized under a reducing atmosphere, and its luminescent properties were investigated. The phosphor absorbs ultraviolet light at around 400 nm and efficiently emits red light at approximately 610 nm through an energy transfer from $Eu^{2+}$ to $Mn^{2+}$. Using the varied input current test for the phosphor-loaded LED lamps, it was found that the luminescent efficiency of the phosphor decreased with increasing light flux. This might be due to an increased probability of excited-state absorption and the consequent non-radiative relaxation in $Mn^{2+}$ ions in the condition of high photon influx.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.263-270
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• 2020

In this study, the physical mechanism and diffusion effects in aluminium implanted silicon was investigated. For fabricating power semiconductor devices, an aluminum implantation can be used as an emitter and a long drift region in a power diode, transistor, and thyristor. Thermal treatment with O₂ gas exhibited to a remarkably deeper profile than inert gas with N₂ in the depth of junction structure. The redistribution of aluminum implanted through via thermal annealing exhibited oxidation-enhanced diffusion in comparison with inert gas atmosphere. To investigate doping distribution for implantation and diffusion experiments, spreading resistance and secondary ion mass spectrometer tools were used for the measurements. For the deep-junction structure of these experiments, aluminum implantation and diffusion exhibited a junction depth around 20 ㎛ for the fabrication of power silicon devices.