• Title/Summary/Keyword: Sr)TiO_3$

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Occurrence and Chemical Composition of White Mica from Wallrock Alteration Zone of Janggun Pb-Zn Deposit (장군 연-아연 광상의 모암변질대에서 산출되는 백색운모의 산상 및 화학조성)

  • Bong Chul, Yoo
    • Korean Journal of Mineralogy and Petrology
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    • v.35 no.4
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    • pp.469-484
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    • 2022
  • The Janggun Pb-Zn deposit has been known one of the four largest deposits (Yeonhwa, Shinyemi, Uljin) in South Korea. The geology of this deposit consists of Precambrian Weonnam formation, Yulri group, Paleozoic Jangsan formation, Dueumri formation, Janggum limestone formation, Dongsugok formation, Jaesan formation and Mesozoic Dongwhachi formation and Chungyang granite. This Pb-Zn deposit is hydrothermal replacement deposit in Paleozoic Janggum limestone formation. The wallrock alteration that is remarkably recognized with Pb-Zn mineralization at this deposit consists of mainly rhodochrositization and dolomitization with minor of pyritization, sericitization and chloritization. Wallrock alteration is divided into the five zones (Pb-Zn orebody -> rhodochrosite zone -> dolomite zone -> dolomitic limestone zone -> limestone or dolomitic marble) from orebody to wallrock. The white mica from wallrock alteration occurs as fine or medium aggregate associated with Ca-dolomite, Ferroan ankerite, sideroplesite, rutile, apatite, arsenopyrite, pyrite, sphalerite, galena, quartz, chlorite and calcite. The structural formular of white mica from wallrock alteration is (K0.77-0.62Na0.03-0.00Ca0.03-0.00Ba0.00Sr0.01)0.82-0.64(Al1.72-1.48Mg0.48-0.20Fe0.04-0.01Mn0.03-0.00Ti0.01-0.00Cr0.00As0.01-0.00Co0.03-0.00Zn0.03-0.00Pb0.05-0.00Ni0.01-0.00)2.07-1.92 (Si3.43-3.33Al0.67-0.57)4.00O10(OH1.94-1.80F0.20-0.06)2.00. It indicated that white mica from wallrock alteration has less K, Na and Ca, and more Si than theoretical dioctahedral micas. The white micas from wallrock alteration of Janggun Pb-Zn deposit, Yeonhwa 1 Pb-Zn deposit and Baekjeon Au-Ag deposit, and limestone of Gumoonso area correspond to muscovite and phengite and white mica from wallrock alteration of Dunjeon Au-Ag deposit corresponds to muscovite. Compositional variations in white mica from wallrock alteration of these deposits and limeston of Gumoonso area are caused by mainly phengitic or Tschermark substitution mechanism (Janggun Pb-Zn deposit), mainly phengitic or Tschermark substitution and partly illitic substitution mechanism (Yeonhwa 1 Pb-Zn deposit, Dunjeon Au-Ag deposit and Baekjeon Au-Ag deposit), and mainly phengitic or Tschermark substitution and partly illitic substitution or Na+ <-> K+ substitution mechanism (Gumoonso area).

Formation of the $CoSi_{2}$ using Co/Zr Bilayer on the Amorphous and the Single Crystalline Si Substrates (단결정과 비정질 Si 기판에서 Co/Zr 이중층을 이용한 $CoSi_{2}$ 형성)

  • Kim, Dong-Wook;Jeon, Hyeong-Tag
    • Korean Journal of Materials Research
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    • v.8 no.7
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    • pp.621-627
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    • 1998
  • The formation of Co-silicide between Co/Zr bilayer on the amorphous and crystalline Si substrates has been investigated. The films of Zr(50$\AA$) and Co(l50$\AA$) were deposited with e-beam evaporation system and were heattreated with the rapid thermal annealing system at the temperatures between 50$0^{\circ}C$ and 80$0^{\circ}C$ with 10$0^{\circ}C$ increments for 30 seconds. The phase identification of Co-silicide was carried out by XRD and the chemical analysis was examined by AES and RBS. The interface morphologies of Co/Zr bilayer films were investigated by cross sectional TEM and HRTEM. $CoSi_2$ was formed epitaxially on the crystalline Si substrate above $700^{\circ}C$ while polycrystalline $CoSi_2$ was grown on the amorphous Si substrate. The formation temperature of Co-silicide on the amorphous Si substrate was about 100 C lower than that on the crystalline Si. The COzSi phase was not identified on the both Si substrates. The formation temperature of first phase of Co-silicide on ColZr bilayer was higher than that on Co mono layer. CoSizlayer formed on the amorphous Si substrate exhibits better uniformity compared to the CoSiz formed on the crystalline substrate. The sheet resistance of CoSiz layer on crystalline Si was lower than that on the amorphous Si at high temperatures.tures.

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